Modular Nonlinear Characterization System and Large-signal Behavioral Modelling of Unmatched Transistors for Streamlined Power Amplifier Design

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Total Pages : 176 pages
Book Rating : 4.:/5 (988 download)

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Book Synopsis Modular Nonlinear Characterization System and Large-signal Behavioral Modelling of Unmatched Transistors for Streamlined Power Amplifier Design by : Dylan Bespalko

Download or read book Modular Nonlinear Characterization System and Large-signal Behavioral Modelling of Unmatched Transistors for Streamlined Power Amplifier Design written by Dylan Bespalko and published by . This book was released on 2016 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis provides a comprehensive approach to the characterization and modelling of large-signal nonlinear RF/microwave devices, circuits and systems. This research is moti- vated by the increased linearity and power-efficiency requirements of modern power ampli- fier technology for wireless communications. For instance, maximizing the power amplifier's efficiency can only be achieved by operating RF transistors under strong nonlinear condi- tions, however this is contradictory to maximizing PA linearity. Simultaneously designing for efficiency and linearity is a challenging trade-off in today's fragmented design process, therefore the advancement of computer-aided design (CAD) tools is essential for achieving an optimal solution. The successful and effective CAD tool based PA design relies on the availability of accurate nonlinear models to mimic the electro-thermal behaviour of RF transistors. The accuracy of these models depends on three factors: 1. The formulation of the model. 2. The model extraction procedure. 3. The accuracy of the measurement data. While prior work focuses separately on the improved model formulations or improving characterization accuracy, this thesis provides a comprehensive analysis of all three factors. This thesis proposes a modular large-signal RF device characterization system, and a non- linear behavioral model capable of handling strongly nonlinear unmatched RF transistors, each necessary to streamline the design process and achieve a first-pass PA design. iii As a first step, a large-signal characterization system has been developed to measure the multi-harmonic frequency response of RF transistors and has the ability to i) Perform high-power measurements, ii) Characterize unmatched transistors, iii) Operate the DUT under any possible operating condition, iv) Synthesize any multi-harmonic stimulus, and v) Reconstruct the time-domain I/V waveforms at the ports of the DUT. The proposed characterization system eliminates fragmentation between measurement and simulation environments by providing seamless integration with Harmonic Balance simulations. This provides a common framework that integrates all steps of the PA design process from device-level characterization, to circuit-level measurement and validation. This system is implemented using modular instruments consisting of mixer-based receivers, arbitrary waveform generators, impedance tuners, and a multi-harmonic phase-coherent reference source. It also integrates sequential calibration routines to provide receiver, port match, and source-power corrections to the DUT measurement plane and measurement routines for automated data collection. The second part of the thesis researches black-box frequency-domain behavioral mod- els that can approximate strongly nonlinear, unmatched devices. Our investigation yielded two complimentary solutions to ensure the targeted modelling accuracy. First, improving the accuracy of a first-order expansion-based Poly-Harmonic Distortion (PHD) model by 5dB, in terms of Normalized Mean-Squared Error (NMSE), by minimizing multi-harmonic reflections that artificially increase the order of the nonlinear system. While this addresses the fictitious need for higher-order models due to the deficiencies in the model extraction procedure, strongly nonlinear devices will require high-order models to achieve the targeted accuracy over a larger measurement distribution. Hence, a variable order Multi-Harmonic Volterra (MHV) model is proposed to extend the PHD model formulation to strong non- linear devices. This model is extracted by utilizing the proposed characterization system to extract higher-order multi-variate model coefficients not included in the PHD model. The resulting model improves DC drain current prediction by 5dB and improves funda- mental output-power prediction by 2dB. The MHV model improves the vector power-gain prediction by 3.4dB in realistic PA design applications, thereby providing better emulation of linearization techniques within a simulation environment. Finally, a concurrent dual-band PA design is studied as an example of how the pro- iv posed nonlinear characterization system and behavioural modelling approach can be used to enable complex PA designs. First, a 10W Class-AB PA is designed using dual-band matching-network theory, however it is difficult to implement because the design technique does not control the matching fractional bandwidth as a design parameter. Therefore, an alternative Class-J 45W dual-band PA was designed using a low-impedance matching network, combined with a trans-impedance dual-band filter. Although the dual-band PA can achieve comparable performance to an equivalent single-band PA at each separate fre- quency, further development of characterization, modeling, and circuit design techniques is needed to achieve high-efficiency during concurrent operation.

Analysis of Power Transistor Behavioural Modeling Techniques Suitable for Narrow-band Power Amplifier Design

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Total Pages : 94 pages
Book Rating : 4.:/5 (835 download)

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Book Synopsis Analysis of Power Transistor Behavioural Modeling Techniques Suitable for Narrow-band Power Amplifier Design by : Amir-Reza Amini

Download or read book Analysis of Power Transistor Behavioural Modeling Techniques Suitable for Narrow-band Power Amplifier Design written by Amir-Reza Amini and published by . This book was released on 2012 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The design of power amplifiers within a circuit simulator requires a good non-linear model that accurately predicts the electormagnetic behaviour of the power transistor. In recent years, a certain class of large signal frequency-dependent black-box behavioural modeling techniques known as Poly-Harmonic Distortion (PHD) models has been devised to mimic the non-linear unmatched RF transistor. These models promise a good prediction of the device behaviour under multi-harmonic periodic continuous wave inputs. This thesis describes the capabilities of the PHD modeling framework and the theoretical type of behaviour that it is capable of predicting. Specifically, the PHD framework cannot necessarily predict the response of a broadband aperiodic signal. This analysis will be performed by deriving the PHD modeling framework as a simplification of the Volterra series kernel functions under the assumption that the power transistor is operating under continuous periodic multi-harmonic voltage and current signals in a stable circuit. A PHD model will be seen as a set of describing functions that predict the response of the Device Under Test (DUT) for any given non-linear periodic continuous-wave inputs that have a specific fundamental frequency. Two popular implementations of PHD models that can be found in the literature are the X-parameter and Cardiff models. Each model formulates the describing functions of the general PHD model differently. The mathematical formulation of the X-parameter and Cardiff models will be discussed in order to provide a theoretical ground for comparing their robustness. The X-parameter model will be seen as the first-order Taylor series approximation of the PHD model describing functions around a Large Signal Operating Point (LSOP) of the device under test. The Cardiff large-signal model uses Fourier series coefficient functions that vary with the magnitude of the large signal(s) as the PHD model describing functions. This thesis will provide a breakdown of the measurement procedure required for the extraction of these models, the challenges involved in the measurement, as well as the mathematical extraction of the model coe cients from measurement data. As each of these models contain have extended versions that enhance the predictive capability of the model under stronger nonlinear modes of operation, a comparison is used to represent the cost of increasing model accuracy as a function of the increasing model complexity for each model. The order of complexity of each model can manifest itself in terms of the mathematical formulation, the number of parameters required and the measurement time that is required to extract each model for a given DUT. This comparison will fairly assess the relative strengths and weaknesses of each model.

Behavioral Modeling of Unmatched Nonlinear Devices Driven with Modulated Signal Stimuli Using Volterra Series

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ISBN 13 :
Total Pages : 55 pages
Book Rating : 4.:/5 (96 download)

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Book Synopsis Behavioral Modeling of Unmatched Nonlinear Devices Driven with Modulated Signal Stimuli Using Volterra Series by : Marwen Ben Rejeb

Download or read book Behavioral Modeling of Unmatched Nonlinear Devices Driven with Modulated Signal Stimuli Using Volterra Series written by Marwen Ben Rejeb and published by . This book was released on 2014 with total page 55 pages. Available in PDF, EPUB and Kindle. Book excerpt: The accurate simulation of nonlinear radio frequency (RF) circuits under unmatched impedance conditions depends heavily on the device model used. Recently, measurement-based models under unmatched conditions were proposed in the literature, such as X-parameters and the Cardiff model, with acceptable device modeling accuracy under continuous-wave (CW) and multitone excitations. However, these schemes drop in accuracy when driven with wideband modulated signals since the pseudo-static property of the CW stimulus fails to capture the nonlinear device dynamics. Being a general framework to model nonlinear dynamic systems with fading memory, the Volterra series was successfully applied to model nonlinear RF devices under matched conditions. However, the few reported attempts to generalize the Volterra series to unmatched device scenarios oversimplify the formulation due to the underlying complexity burden. This thesis presents a novel low-complexity envelope domain multivariate model (i.e., dual-input dual-output or DIDO Volterra model), tailored to unmatched devices. The proposed model offers a theoretical framework to model the nonlinear device's behaviour in any two-port network around the fundamental frequency. As the proposed methodology does not include any assumptions about the device under test (DUT), the resulting model can be applied to either RF transistors or power amplifiers (PAs). The detailed derivation steps, as well as the resulting mathematical formulations, are presented and discussed. For a fair assessment of the model's performance, a simulation procedure was developed where a PA under varying load impedances was modeled. Any modeling exercise is tightly coupled to both the device characterization and measurement procedures. Indeed, the successful application of a behavioral model is contingent on a precise extraction of the nonlinear measurements. In the case of the DIDO Volterra model, the use of modulated signals as stimulus further complicates the measurement procedure and a more careful extraction procedure should be implemented. The platform should be able to correctly measure the travelling waves' envelopes at the device ports while controlling the source/load impedances. Hence, the second part of this thesis outlines progress towards the realization of such a platform and focuses on explaining the associated challenges. A thorough discussion of the platform architecture and the underlying building blocks is presented and the related choices justified. Furthermore, additional calibration routines under wideband signals are described.

Nonlinear Transistor Model Parameter Extraction Techniques

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Publisher : Cambridge University Press
ISBN 13 : 1139502263
Total Pages : 367 pages
Book Rating : 4.1/5 (395 download)

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Book Synopsis Nonlinear Transistor Model Parameter Extraction Techniques by : Matthias Rudolph

Download or read book Nonlinear Transistor Model Parameter Extraction Techniques written by Matthias Rudolph and published by Cambridge University Press. This book was released on 2011-10-13 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

Vector corrected non-linear transistor characterization

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Total Pages : pages
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Book Synopsis Vector corrected non-linear transistor characterization by :

Download or read book Vector corrected non-linear transistor characterization written by and published by . This book was released on 1909 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: An on-wafer microwave characterization system has been developed that allows for both 'frequency domain' swept frequency fixed power small signal s-parameter measurements and 'time domain' swept power fixed frequency large signal power measurements of transistors from 0.5 GHz to 40 GHz. The 'time domain' measurements are fully vector corrected to allow for the determination of both magnitudes and phases of the harmonise generated in the nonlinear regime. Such measurement capability allows for the measurement of the large signal voltage and currents waveforms present at the transistor terminations under large signal microwave excitation. The availability of these waveforms not only provides detailed insight into the operation of the transistor under large signal conditions, but is also revolutionizing the development, optimization and extraction of non-linear models and circuits design techniques. The charcterization techniques are illustrated through measurements on 025\im gate transistors fabricated using the H40 process at GMMT having a 4x60 m gate width.

Transistor Level Modeling for Analog/RF IC Design

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Publisher : Springer Science & Business Media
ISBN 13 : 1402045565
Total Pages : 298 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Transistor Level Modeling for Analog/RF IC Design by : Wladyslaw Grabinski

Download or read book Transistor Level Modeling for Analog/RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

A Nonlinear Dynamic Model for Performance Analysis of Large-signal Amplifiers in Communication Systems

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (632 download)

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Book Synopsis A Nonlinear Dynamic Model for Performance Analysis of Large-signal Amplifiers in Communication Systems by :

Download or read book A Nonlinear Dynamic Model for Performance Analysis of Large-signal Amplifiers in Communication Systems written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new nonlinear dynamic model of large-signal amplifiers based on a Volterra-like integral series expansion is described. The new Volterra-like series is specially oriented to the modeling of nonlinear communication circuits, since it is expressed in terms of dynamic deviations of the complex modulation envelope of the input signal. The proposed model represents a generalization, to nonlinear systems with memory, of the widely-used amplitude/amplitude (AM/AM) and amplitude/phase (AM/PM) conversion characteristics, which are based on the assumption of a practically memoryless behavior. A measurement procedure for the experimental characterization of the proposed model is also outlined.

Design of Millimeter-wave Power Amplifiers Using InP Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : 123 pages
Book Rating : 4.:/5 (459 download)

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Book Synopsis Design of Millimeter-wave Power Amplifiers Using InP Heterojunction Bipolar Transistors by : Tomás O'Sullivan

Download or read book Design of Millimeter-wave Power Amplifiers Using InP Heterojunction Bipolar Transistors written by Tomás O'Sullivan and published by . This book was released on 2009 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this dissertation is on the development of high power, monolithically integrated amplifiers for millimeter-wave wireless communication systems utilizing InP DHBT devices. Due to the ever increasing bandwidth requirements of wireless communications systems, the large amount of spectrum available at millimeter-wave frequencies is making these frequency bands increasingly more relevant. This spurs the need for the development of the various circuit and system building blocks required for implementation of reliable communications systems taking advantage of these wide-band channels. The challenges posed in the development of millimeter-wave power amplifier design range from device model development, to circuit design aspects and also compact power combiner design. The large signal nature of power amplifier operation requires device models, which accurately capture the nonlinear and heating effects of the devices used in the power amplifier design. Techniques for the measurement and model extraction of InP DHBT devices for millimeter-wave applications are discussed in detail. As part of the design of a compact millimeter-wave power amplifier, the optimum design of thermal ballasting networks and cascode termination impedances are described. Design tradeoffs in the choice of load resistance for the design are also explained. Using these techniques, a compact power amplifier operating at 72GHz was designed exhibiting 20.6dBm output power and 13.9% PAE. Finally, the design of a novel planar radial power splitter and combiner architecture is described. Transmission lines, vertical transitions and microstrip crossovers required for the implementation of this structure are explained in detail. Using this structure a high power amplifier is designed with a center frequency of 72GHz. This amplifier demonstrates an output power of 24.6dBm along with a PAE of 8.9%.

Microwave Transistor Amplifiers

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Publisher : Prentice Hall
ISBN 13 :
Total Pages : 264 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Microwave Transistor Amplifiers by : Guillermo Gonzalez

Download or read book Microwave Transistor Amplifiers written by Guillermo Gonzalez and published by Prentice Hall. This book was released on 1984 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) -- using scattering parameters techniques. FEATURES: A clear and straightforward presentation designed to be comprehensive. A self-contained book. Examples based on practical designs. Over 300 figures, 153 problems, and 14 appendices. NEW TO THIS EDITION: NEW-- Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillator theory, and DROs. NEW-- A new appendix using CAD methods. NEW-- A 65% increase in the number of problems and figures.

Low-Noise Wide-Band Amplifiers in Bipolar and CMOS Technologies

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Publisher : Springer Science & Business Media
ISBN 13 : 1475721269
Total Pages : 219 pages
Book Rating : 4.4/5 (757 download)

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Book Synopsis Low-Noise Wide-Band Amplifiers in Bipolar and CMOS Technologies by : Zhong Yuan Chong

Download or read book Low-Noise Wide-Band Amplifiers in Bipolar and CMOS Technologies written by Zhong Yuan Chong and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog circuit design has grown in importance because so many circuits cannot be realized with digital techniques. Examples are receiver front-ends, particle detector circuits, etc. Actually, all circuits which require high precision, high speed and low power consumption need analog solutions. High precision also needs low noise. Much has been written already on low noise design and optimization for low noise. Very little is available however if the source is not resistive but capacitive or inductive as is the case with antennas or semiconductor detectors. This book provides design techniques for these types of optimization. This book is thus intended firstly for engineers on senior or graduate level who have already designed their first operational amplifiers and want to go further. It is especially for engineers who do not want just a circuit but the best circuit. Design techniques are given that lead to the best performance within a certain technology. Moreover, this is done for all important technologies such as bipolar, CMOS and BiCMOS. Secondly, this book is intended for engineers who want to understand what they are doing. The design techniques are intended to provide insight. In this way, the design techniques can easily be extended to other circuits as well. Also, the design techniques form a first step towards design automation. Thirdly, this book is intended for analog design engineers who want to become familiar with both bipolar and CMOS technologies and who want to learn more about which transistor to choose in BiCMOS.

Parameter Extraction and Complex Nonlinear Transistor Models

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Publisher : Artech House
ISBN 13 : 1630817457
Total Pages : 610 pages
Book Rating : 4.6/5 (38 download)

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Book Synopsis Parameter Extraction and Complex Nonlinear Transistor Models by : Gunter Kompa

Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.

Designing Transistor I.F. Amplifiers

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Publisher : Springer
ISBN 13 : 3662395444
Total Pages : 348 pages
Book Rating : 4.6/5 (623 download)

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Book Synopsis Designing Transistor I.F. Amplifiers by : Wilhelmus Th. H. Hetterscheid

Download or read book Designing Transistor I.F. Amplifiers written by Wilhelmus Th. H. Hetterscheid and published by Springer. This book was released on 2013-12-21 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Heterojunction Bipolar Transistors for Circuit Design

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Publisher : John Wiley & Sons
ISBN 13 : 1118921550
Total Pages : 394 pages
Book Rating : 4.1/5 (189 download)

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Book Synopsis Heterojunction Bipolar Transistors for Circuit Design by : Jianjun Gao

Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

Intermodulation Distortion in GaN HEMT

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Publisher : Cuvillier Verlag
ISBN 13 : 3736931883
Total Pages : 158 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Intermodulation Distortion in GaN HEMT by : Ibrahim Khalil

Download or read book Intermodulation Distortion in GaN HEMT written by Ibrahim Khalil and published by Cuvillier Verlag. This book was released on 2010-01-03 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work treats intermodulation distortion performance of GaN-HEMT high-power transistors. A detailed study on the physical parameters influencing third-order intermodulation distortions is carried out, based on the large-signal model and on physical device simulation. Devices are characterized in terms of linearity by setting up a sophisticated measurement system. Among others, an electronic fuse is used at the drain side to avoid catastrophic failure during measurement. The bias-dependent transconductance characteristic is identified as the dominating source for intermodulation distortion in GaN HEMTs, while drain-source capacitance and access resistances have only minor influence. The corresponding physical parameters governing the transconductance behavior are determined and optimized structures for high linearity are proposed. Besides characterization and analysis of conventional designs, a novel device architecture for very high linearity is presented. Finally, performance of GaN HEMTs within a hybrid amplifier configuration is shown and the combination of high power, high linearity, and low-noise characteristics is highlighted.

Compehensive Nonlinear Modelling of Dispersive Heterstructure Field Effect Transistors and their MMIC Applications

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Publisher : Cuvillier Verlag
ISBN 13 : 3736919239
Total Pages : 160 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Compehensive Nonlinear Modelling of Dispersive Heterstructure Field Effect Transistors and their MMIC Applications by : Ingmar Kallfass

Download or read book Compehensive Nonlinear Modelling of Dispersive Heterstructure Field Effect Transistors and their MMIC Applications written by Ingmar Kallfass and published by Cuvillier Verlag. This book was released on 2006-06-28 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: A custom HFET model was developed and applied in the design of several MMIC applica- tions. The model is expressly dedicated to microwave circuit design. Its analytical nonlinear equations provide a compromise between physical interpretability, numerical efficiency and global validity. As an essential part of the overall model, the COBRA expression features a highly efficient and accurate description of complex HFET drain current characteristics. A modification was introduced to include the reduction of drain current due to the self-heating effect as well as for improved description of gain compression. A new approach to frequency dispersion modelling extends the model’s validity range from the microwave- down to the low-frequency and DC regimes. The proposed dispersion model relies on conventional device characterisation techniques and standard parameter ex- traction procedures. The inclusion of multiple dispersion time constants and exponentially decaying step responses accurately reflects the physical nature of individual dispersion ef- fects, providing a correct description of transitions between dispersion regimes both in the time- and frequency domain. As a consequence, the model allows for accurate assessment of dynamic (gain, matching, intermodulation etc.), static (e.g. biasing, power consumption) as well as combined (e.g. PAE, self-biasing) figures of merit during the design phase. Addition- ally, the simulation error introduced by neglecting frequency dispersion when using purely static or dynamic drain current models, can be evaluated. A unified capacitance model approach defines the frame for sets of charge-conservative expressions for gate capacitance characteristics. The final equations employed here resemble in composition the Curtice IV model, e.g. in terms of transition from linear- to saturated- and from sub-threshold- to active voltage regimes. The universal validity of the model was demonstrated by applying it to several different HEMT technologies, encompassing both state-of-the-art GaAs pHEMT low-noise and power processes, high-frequency InP pHEMTs as well as novel concepts such as the strained-Si/SiGe mHEMT. Both the nonlinear capacitance and dispersion models proved to apply very well to all HEMT technologies.

Analysis of the Nonlinear Characteristics of Microwave Power Heterojunction Bipolar Transistors and Optoelectronic Integrated Circuits

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Publisher :
ISBN 13 :
Total Pages : 790 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Analysis of the Nonlinear Characteristics of Microwave Power Heterojunction Bipolar Transistors and Optoelectronic Integrated Circuits by : Apostolos Samelis

Download or read book Analysis of the Nonlinear Characteristics of Microwave Power Heterojunction Bipolar Transistors and Optoelectronic Integrated Circuits written by Apostolos Samelis and published by . This book was released on 1996 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Large Signal Transistor Modeling with Applications to Investigations of RF Power Amplifier Behavior

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ISBN 13 :
Total Pages : 580 pages
Book Rating : 4.:/5 (258 download)

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Book Synopsis Large Signal Transistor Modeling with Applications to Investigations of RF Power Amplifier Behavior by : Jens Vidkjaer

Download or read book Large Signal Transistor Modeling with Applications to Investigations of RF Power Amplifier Behavior written by Jens Vidkjaer and published by . This book was released on 1974 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: