Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices

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Author :
Publisher : World Scientific
ISBN 13 : 9811255377
Total Pages : 322 pages
Book Rating : 4.8/5 (112 download)

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Book Synopsis Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices by : Ao Zhang

Download or read book Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices written by Ao Zhang and published by World Scientific. This book was released on 2023-03-21 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

Modeling and Design Techniques for RF Power Amplifiers

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 9780470228302
Total Pages : 224 pages
Book Rating : 4.2/5 (283 download)

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Book Synopsis Modeling and Design Techniques for RF Power Amplifiers by : Arvind Raghavan

Download or read book Modeling and Design Techniques for RF Power Amplifiers written by Arvind Raghavan and published by John Wiley & Sons. This book was released on 2008-02-04 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.

CMOS RF Modeling, Characterization and Applications

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Publisher : World Scientific
ISBN 13 : 9789810249052
Total Pages : 426 pages
Book Rating : 4.2/5 (49 download)

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Book Synopsis CMOS RF Modeling, Characterization and Applications by : M. Jamal Deen

Download or read book CMOS RF Modeling, Characterization and Applications written by M. Jamal Deen and published by World Scientific. This book was released on 2002 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Measurement and Modeling of Silicon Heterostructure Devices

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Author :
Publisher : CRC Press
ISBN 13 : 1351834762
Total Pages : 195 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Measurement and Modeling of Silicon Heterostructure Devices by : John D. Cressler

Download or read book Measurement and Modeling of Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt: When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Design, Simulation and Applications of Inductors and Transformers for Si RF ICs

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 0306470381
Total Pages : 193 pages
Book Rating : 4.3/5 (64 download)

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Book Synopsis Design, Simulation and Applications of Inductors and Transformers for Si RF ICs by : Ali M. Niknejad

Download or read book Design, Simulation and Applications of Inductors and Transformers for Si RF ICs written by Ali M. Niknejad and published by Springer Science & Business Media. This book was released on 2005-12-15 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt: The modern wireless communication industry has put great demands on circuit designers for smaller, cheaper transceivers in the gigahertz frequency range. One tool which has assisted designers in satisfying these requirements is the use of on-chip inductiveelements (inductors and transformers) in silicon (Si) radio-frequency (RF) integrated circuits (ICs). These elements allow greatly improved levels of performance in Si monolithic low-noise amplifiers, power amplifiers, up-conversion and down-conversion mixers and local oscillators. Inductors can be used to improve the intermodulation distortion performance and noise figure of small-signal amplifiers and mixers. In addition, the gain of amplifier stages can be enhanced and the realization of low-cost on-chip local oscillators with good phase noise characteristics is made feasible. In order to reap these benefits, it is essential that the IC designer be able to predict and optimize the characteristics of on-chip inductiveelements. Accurate knowledge of inductance values, quality factor (Q) and the influence of ad- cent elements (on-chip proximity effects) and substrate losses is essential. In this book the analysis, modeling and application of on-chip inductive elements is considered. Using analyses based on Maxwells equations, an accurate and efficient technique is developed to model these elements over a wide frequency range. Energy loss to the conductive substrate is modeled through several mechanisms, including electrically induced displacement and conductive c- rents and by magnetically induced eddy currents. These techniques have been compiled in a user-friendly software tool ASITIC (Analysis and Simulation of Inductors and Transformers for Integrated Circuits).

Modeling and Characterization of RF and Microwave Power FETs

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Author :
Publisher : Cambridge University Press
ISBN 13 : 113946812X
Total Pages : 375 pages
Book Rating : 4.1/5 (394 download)

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Book Synopsis Modeling and Characterization of RF and Microwave Power FETs by : Peter Aaen

Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Nonlinear Modeling Analysis and Predistortion Algorithm Research of Radio Frequency Power Amplifiers

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Author :
Publisher : CRC Press
ISBN 13 : 1000409597
Total Pages : 217 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis Nonlinear Modeling Analysis and Predistortion Algorithm Research of Radio Frequency Power Amplifiers by : Jingchang Nan

Download or read book Nonlinear Modeling Analysis and Predistortion Algorithm Research of Radio Frequency Power Amplifiers written by Jingchang Nan and published by CRC Press. This book was released on 2021-07-30 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a summary of a series of achievements made by the authors and colleagues in the areas of radio frequency power amplifier modeling (including neural Volterra series modeling, neural network modeling, X-parameter modeling), nonlinear analysis methods, and power amplifier predistortion technology over the past 10 years. The book is organized into ten chapters, which respectively describe an overview of research of power amplifier behavioral models and predistortion technology, nonlinear characteristics of power amplifiers, power amplifier behavioral models and the basis of nonlinear analysis, an overview of power amplifier predistortion, Volterra series modeling of power amplifiers, power amplifier modeling based on neural networks, power amplifier modeling with X-parameters, the modeling of other power amplifiers, nonlinear circuit analysis methods, and predistortion algorithms and applications. Blending theory with analysis, this book will provide researchers and RF/microwave engineering students with a valuable resource.

Fast Techniques for Integrated Circuit Design

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Publisher : Cambridge University Press
ISBN 13 : 1108579760
Total Pages : 257 pages
Book Rating : 4.1/5 (85 download)

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Book Synopsis Fast Techniques for Integrated Circuit Design by : Mikael Sahrling

Download or read book Fast Techniques for Integrated Circuit Design written by Mikael Sahrling and published by Cambridge University Press. This book was released on 2019-08-15 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to deepen your understanding of complex systems and design integrated circuits more quickly? Learn how with this step-by-step guide that shows, from first principles, how to employ estimation techniques to analyze and solve complex problems in IC design using a simplified modeling approach. Applications are richly illustrated using real-world examples from across IC design, from simple circuit theory, to the electromagnetic effects and high frequency design, and systems such as data converters and phase-locked loops. Basic concepts like inductance and capacitance are related to one other and other RF phenomena inside a modern chip, enhancing understanding without the need for simulators. Use the easy-to-follow models presented to start designing your own products, from inductors and amplifiers to more complex systems. Whether you are an early-career professional or researcher, graduate student, or established IC engineer looking to reduce your reliance on commercial software packages, this is essential reading.

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

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Publisher : Cambridge University Press
ISBN 13 : 1108581390
Total Pages : 255 pages
Book Rating : 4.1/5 (85 download)

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Book Synopsis Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors by : Farzan Jazaeri

Download or read book Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors written by Farzan Jazaeri and published by Cambridge University Press. This book was released on 2018-03-01 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits

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Publisher : IET
ISBN 13 : 0863417434
Total Pages : 457 pages
Book Rating : 4.8/5 (634 download)

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Book Synopsis Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits by : G.A. Armstrong

Download or read book Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits written by G.A. Armstrong and published by IET. This book was released on 2007-11-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Reliable RF Power Amplifier Design Based on a Partitioning Design Approach

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Publisher : kassel university press GmbH
ISBN 13 : 3899588592
Total Pages : 144 pages
Book Rating : 4.8/5 (995 download)

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Book Synopsis Reliable RF Power Amplifier Design Based on a Partitioning Design Approach by : Rui Ma

Download or read book Reliable RF Power Amplifier Design Based on a Partitioning Design Approach written by Rui Ma and published by kassel university press GmbH. This book was released on 2010 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Front cover -- Titelseite -- Impressum -- Acknowledgments -- Contents -- List of Abbreviations and Acronyms -- Abstract -- Zusammenfassung -- Chapter 1 Introduction -- 1.1 Principle of the Partitioning Design Approach -- 1.2 Dissertation Organization -- Chapter 2 Investigation of Planar-Interconnection -- 2.1 Active Chip Device Interconnection -- 2.1.1 Die Attach -- 2.1.2 Wire Bonding Pad-To-Microstrip -- 2.2 Microstrip-to-Microstrip Interconnection -- 2.2.1 Soldering -- 2.2.2 Multi-Wire Bonding -- 2.2.3 Copper Ribbon -- 2.2.4 Silver- Painting -- Chapter 3 Analysis and Modeling of Passive SMD Components -- 3.1 SMD Resistor -- 3.2 SMD Capacitor -- 3.3 SMD Inductor -- Chapter 4 Modeling of AlGaAs/GaAs HEMT Chip Device -- 4.1 AIGaAs/GaGa HEMT Chip -- 4.2 Modeling Approach Overview -- 4.3 Small-Signal Modeling -- 4.3.1 Extrinsic Parameter Extraction -- 4.3.2 Intrinsic Parameter Extraction -- 4.4 Large-Signal Modeling -- 4.4.1 Gate Current and Charge Models -- 4.4.2 Drain Current Model -- 4.4.3 Model Verification -- Chapter 5 Demonstrator Design of a Class-AB Power Amplifier Following -- 5.1 Micro-Packaged Device Characterization -- 5.1.1 Small-Signal Performance -- 5.1.2 Large-Signal Performance -- 5.2 Bias Network Design -- 5.2.1 Drain Bias Network -- 5.2.2 Gate Bias Network -- 5.3 Matching Network Design -- 5.3.1 Matching Impedance Determination -- 5.4 Power Amplifier Performance Evaluation -- 5.4.1 Small-Signal Performance -- 5.4.2 Large-Signal Performance -- Chapter 6 Conclusions and Outlook -- Appendix -- Appendix A THLR In-Fixture Calibration -- Appendix B Precise Determination of Substrate Permittivity -- Appendix C Schematic Circuit of the Designed Power Amplifier Demonstrator -- Appendix D Power Amplifier Design Following the Conventional Design Approach -- References -- Back cover

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design

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Author :
Publisher : Woodhead Publishing
ISBN 13 : 0081024029
Total Pages : 258 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Industry Standard FDSOI Compact Model BSIM-IMG for IC Design by : Chenming Hu

Download or read book Industry Standard FDSOI Compact Model BSIM-IMG for IC Design written by Chenming Hu and published by Woodhead Publishing. This book was released on 2019-05-21 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model Explains the complex operation of the FDSOI device and its use of two independent control inputs Addresses the parameter extraction challenges for those using this model

Introducing Technology Computer-Aided Design (TCAD)

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Author :
Publisher : CRC Press
ISBN 13 : 9814745529
Total Pages : 438 pages
Book Rating : 4.8/5 (147 download)

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Book Synopsis Introducing Technology Computer-Aided Design (TCAD) by : Chinmay K. Maiti

Download or read book Introducing Technology Computer-Aided Design (TCAD) written by Chinmay K. Maiti and published by CRC Press. This book was released on 2017-03-16 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.

Automated Hierarchical Synthesis of Radio-Frequency Integrated Circuits and Systems

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Author :
Publisher : Springer Nature
ISBN 13 : 3030472477
Total Pages : 198 pages
Book Rating : 4.0/5 (34 download)

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Book Synopsis Automated Hierarchical Synthesis of Radio-Frequency Integrated Circuits and Systems by : Fábio Passos

Download or read book Automated Hierarchical Synthesis of Radio-Frequency Integrated Circuits and Systems written by Fábio Passos and published by Springer Nature. This book was released on 2020-07-11 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes a new design methodology that allows optimization-based synthesis of RF systems in a hierarchical multilevel approach, in which the system is designed in a bottom-up fashion, from the device level up to the (sub)system level. At each level of the design hierarchy, the authors discuss methods that increase the design robustness and increase the accuracy and efficiency of the simulations. The methodology described enables circuit sizing and layout in a complete and automated integrated manner, achieving optimized designs in significantly less time than with traditional approaches.

Simulation-Driven Design Optimization and Modeling for Microwave Engineering

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Publisher : World Scientific
ISBN 13 : 1848169221
Total Pages : 528 pages
Book Rating : 4.8/5 (481 download)

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Book Synopsis Simulation-Driven Design Optimization and Modeling for Microwave Engineering by : Slawomir Koziel

Download or read book Simulation-Driven Design Optimization and Modeling for Microwave Engineering written by Slawomir Koziel and published by World Scientific. This book was released on 2013-03-14 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: Computer-aided full-wave electromagnetic (EM) analysis has been used in microwave engineering for the past decade. Initially, its main application area was design verification. Today, EM-simulation-driven optimization and design closure become increasingly important due to the complexity of microwave structures and increasing demands for accuracy. In many situations, theoretical models of microwave structures can only be used to yield the initial designs that need to be further fine-tuned to meet given performance requirements. In addition, EM-based design is a must for a growing number of microwave devices such as ultra-wideband (UWB) antennas, dielectric resonator antennas and substrate-integrated circuits. For circuits like these, no design-ready theoretical models are available, so design improvement can only be obtained through geometry adjustments based on repetitive, time-consuming simulations. On the other hand, various interactions between microwave devices and their environment, such as feeding structures and housing, must be taken into account, and this is only possible through full-wave EM analysis. Electromagnetic simulations can be highly accurate, but they tend to be computationally expensive. Therefore, practical design optimization methods have to be computationally efficient, so that the number of CPU-intensive high-fidelity EM simulations is reduced as much as possible during the design process. For the same reasons, techniques for creating fast yet accurate models of microwave structures become crucially important. In this edited book, the authors strive to review the state-of-the-art simulation-driven microwave design optimization and modeling. A group of international experts specialized in various aspects of microwave computer-aided design summarize and review a wide range of the latest developments and real-world applications. Topics include conventional and surrogate-based design optimization techniques, methods exploiting adjoint sensitivity, simulation-based tuning, space mapping, and several modeling methodologies, such as artificial neural networks and kriging. Applications and case studies include microwave filters, antennas, substrate integrated structures and various active components and circuits. The book also contains a few introductory chapters highlighting the fundamentals of optimization and modeling, gradient-based and derivative-free algorithms, metaheuristics, and surrogate-based optimization techniques, as well as finite difference and finite element methods. Contents:Introduction to Optimization and Gradient-Based Methods (Xin-She Yang and Slawomir Koziel)Derivative-Free Methods and Metaheuristics (Xin-She Yang and Slawomir Koziel)Surrogate-Based Optimization (Slawomir Koziel, Leifur Leifsson, and Xin-She Yang)Space Mapping (Slawomir Koziel, Stanislav Ogurtsov, Qingsha S Cheng, and John W Bandler)Tuning Space Mapping (Qingsha S Cheng, John W Bandler, and Slawomir Koziel)Robust Design Using Knowledge-Based Response Correction and Adaptive Design Specifications (Slawomir Koziel, Stanislav Ogurtsov, and Leifur Leifsson)Simulation-Driven Design of Broadband Antennas Using Surrogate-Based Optimization (Slawomir Koziel and Stanislav Ogurtsov)Neural Networks for Radio Frequency/Microwave Modeling (Chuan Zhang, Lei Zhang, and Qi-Jun Zhang)Parametric Modeling of Microwave Passive Components Using Combined Neural Network and Transfer Function (Yazi Cao, Venu-Madhav-Reddy Gongal-Reddy, and Qi-Jun Zhang)Parametric Sensitivity Macromodels for Gradient-Based Optimization (Krishnan Chemmangat, Francesco Ferranti, Tom Dhaene, and Luc Knockaert)Neural Space Mapping Methods for Electromagnetics-Based Yield Estimation (José E Rayas-Sánchez)Neural Network Inverse Modeling for Microwave Filter Design (Humayun Kabir, Ying Wang, Ming Yu, and Qi-Jun Zhang)Simulation-Driven Design of Microwave Filters for Space Applications (Elena Díaz Caballero, José Vicente Morro Ros, Héctor Esteban González, Vicente Enrique Bôria Esbert, Carmen Bachiller Martín, and Ángel Belenguer Martinez)Time Domain Adjoint Sensitivities: The Transmission Line Modeling (TLM) Case (Mohamed H Bakr and Osman S Ahmed)Boundary Conditions for Two-Dimensional Finite-Element Modeling of Microwave Devices (Tian-Hong Loh and Christos Mias)Boundary Conditions for Three-Dimensional Finite-Element Modeling of Microwave Devices (Tian-Hong Loh and Christos Mias) Readership: Graduates, lecturers, and researchers in electrical engineering, as well as engineers who use numerical optimization in their design work. This book will be of great interest to researchers in the fields of microwave engineering, antenna design, and computational electromagnetics. Keywords:Computer-Aided Design;Electromagnetic Simulation;Microwave Design;Numerical Optimization;Surrogate ModelingKey Features:This book summarizes the latest developments in the fieldIt provides a balanced coverage of classical and engineering-oriented optimization methods in one volume, and also includes methodologies not covered by any other book elsewhere, such as robust modeling methodologies (both conventional and modern) and physically-based approaches; surrogate-based techniques and microwave-engineering specific approaches simulation-driven design methods for computationally expensive problemsThis book covers both introductory materials, practical methods and algorithms, as well as applications and case studies

Multigate Transistors for High Frequency Applications

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Author :
Publisher : Springer Nature
ISBN 13 : 981990157X
Total Pages : 98 pages
Book Rating : 4.8/5 (199 download)

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Book Synopsis Multigate Transistors for High Frequency Applications by : K. Sivasankaran

Download or read book Multigate Transistors for High Frequency Applications written by K. Sivasankaran and published by Springer Nature. This book was released on 2023-03-27 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

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Author :
Publisher :
ISBN 13 : 9783030777319
Total Pages : 0 pages
Book Rating : 4.7/5 (773 download)

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Book Synopsis Advanced SPICE Model for GaN HEMTs (ASM-HEMT) by : Sourabh Khandelwal

Download or read book Advanced SPICE Model for GaN HEMTs (ASM-HEMT) written by Sourabh Khandelwal and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.