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Microstructure And Electrical Performance Of Sputter Deposited Hafnium Oxide Hfo2 Thin Films
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Book Synopsis Microstructure and Electrical Performance of Sputter-deposited Hafnium Oxide (HfO2) Thin Films by : Brandon A. Aguirre
Download or read book Microstructure and Electrical Performance of Sputter-deposited Hafnium Oxide (HfO2) Thin Films written by Brandon A. Aguirre and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Characterization of Hafnium Oxide (HfO2) Thin Films Deposited by RF Sputtering by : Pratap Murali
Download or read book Electrical Characterization of Hafnium Oxide (HfO2) Thin Films Deposited by RF Sputtering written by Pratap Murali and published by . This book was released on 2006 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Formation of Ferroelectricity in Hafnium Oxide Based Thin Films by : Tony Schenk
Download or read book Formation of Ferroelectricity in Hafnium Oxide Based Thin Films written by Tony Schenk and published by BoD – Books on Demand. This book was released on 2017-03-15 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.
Book Synopsis The Structure, Optical Behavior, and Thermal Stability of Sputter-deposited HfO2 Single Layer and HfO2-Al2O3 Nanolaminate Thin-films by : Elizabeth Ellen Hoppe
Download or read book The Structure, Optical Behavior, and Thermal Stability of Sputter-deposited HfO2 Single Layer and HfO2-Al2O3 Nanolaminate Thin-films written by Elizabeth Ellen Hoppe and published by . This book was released on 2009 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microstructure and Properties of Hard and Optically Transparent HfO2 Films Prepared by High-rate Reactive High-power Impulse Magnetron Sputtering by : Nai-Wen Pi
Download or read book Microstructure and Properties of Hard and Optically Transparent HfO2 Films Prepared by High-rate Reactive High-power Impulse Magnetron Sputtering written by Nai-Wen Pi and published by . This book was released on 2016 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hafnium Dioxide (HfO2) has an extraordinary high bulk modulus, high hardness, high chemical stability, high melting point and high thermal stability. This material can be used as protective coatings for application involving high temperature environments. HfO2 films were fabricated on Si using high-rate reactive high-power impulse magnetron sputtering (HiPIMS) using different deposition-averaged target power density Sd and voltage pulse durations t1. Five HfO2 films were prepared with (1) t1 = 25 microsecond, Sd = 7.6 Wcm−2 (T25S7), (2) t1 = 100 microsecond Sd =7.2 Wcm−2 (T100S7), (3) t1 = 200 microsecond, Sd =7.3 Wcm−2 (TS200S7), (4) t1 = 200 microsecond, Sd =18 Wcm−2 (T200S18) and (5) t1 = 200 microsecond, Sd =54 Wcm−2 (T200S54). Atomic force microscopy (AFM) images of the T200S54, T200S18 and T200S7 films exhibit a coarser granular structure with a similar grain size varying from 25 nm to 120 nm in diameter and an average grain size of ~70 nm. AFM images of the T25S7 and T100S7 films show smaller granular structures compared to the other three films. Transmission electron microscopy (TEM) studies show that all films are composed of an interlayer next to the Si interface followed by a nano-columnar structure layer. The interlayer structure of the films consists of a population of lower density nanoscale regions. A reduction in t1 and Sd in films T200S54, T200S18, T200S7 and T100S7 caused an increase in the interlayer thickness and a decrease in the width of the nano-columnar structures from ~46 nm to ~21 nm. This microstructural change was accompanied by a concomitant change of the grain boundary structure from tight and interlocking in films T200S54 and T200S18, to rough and thicker (~1 nm) boundaries in films T200S7 and T100S7. Film T25S7 exhibited an entirely different microstructure composed of a multilayered interlayer (~3 nm) and nano-columnar (~15 nm) structure. Films prepared with large t1 (200 microsecond) have a monoclinic HfO2 structure and that with small t1 (25 microsecond) an orthorhombic HfO2 structure. Film prepared with an intermediate t1 value (100 microsecond) exhibited a mixture of both monoclinic and orthorhombic phases. A high hardness of 17.6-17.0 GPa was shown for films with a monoclinic HfO2 structure. The films exhibited a refractive index of 2.02-2.11 and an extinction coefficient between [less than or equal to] 2x10-3 and 0.1x10-3 (both at a wavelength of 550 nm). High optical quality was achieved for films T200S54 and T200S18 owing to the presence of a dense microstructure with sharp and interlocking grain boundaries.
Book Synopsis Physical and Electrical Characterization of Hafnium Oxide Thin Films Deposited by Pulsed Laser Deposition Technique by : Bhanu P. Dharmaiahgari
Download or read book Physical and Electrical Characterization of Hafnium Oxide Thin Films Deposited by Pulsed Laser Deposition Technique written by Bhanu P. Dharmaiahgari and published by . This book was released on 2004 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis STRUCTURE AND ELECTRICAL PROPERTIES OF RF SPUTTER DEPOSITED INDIUM ANTIMON IDE THIN FILMS by :
Download or read book STRUCTURE AND ELECTRICAL PROPERTIES OF RF SPUTTER DEPOSITED INDIUM ANTIMON IDE THIN FILMS written by and published by . This book was released on 1976 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last few years, sputtering has become a very important industrial technique for depositing thin films. Typical applications include metalization and passivation in the electronics industry, the deposition of complex cermets, glasses, and plastics, and the formation of coatings for corrosion, abrasion, and wear resistance. However, relatively little work has been reported on the growth of compound semiconducting films by sputtering.
Book Synopsis Ba{sub 1-x}SrxTiO3 Thin Film Sputter-growth Processes and Electrical Property Relationships for High Frequency Devices by :
Download or read book Ba{sub 1-x}SrxTiO3 Thin Film Sputter-growth Processes and Electrical Property Relationships for High Frequency Devices written by and published by . This book was released on 1999 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Precise control of Ba{sub 1-x}SrxTi03 (BST) film composition is critical for the production of high-quality BST thin films. Specifically, it is known that nonstoichiometry greatly affects the electrical properties of BST film capacitors. The authors are investigating the composition-microstructure-electrical property relationships of polycrystalline BST films produced by magnetron sputter-deposition using a single target with a Ba/Sr ratio of 50/50 and a (Ba+Sr)/Ti ratio of 1.0. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. The crystalline quality as well as the measured dielectric constant, dielectric tunability, and electrical breakdown voltage of BST films have been found to be strongly dependent on the composition of the BST films, especially the (Ba+Sr)/Ti ratio. The authors discuss the impact of BST film composition control, through film deposition and process parameters, on the electrical properties of BST capacitors for high frequency devices.
Book Synopsis Ferroelectricity in Doped Hafnium Oxide by : Uwe Schroeder
Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Book Synopsis Design and Development of Nanostructured Thin Films by : Antonella Macagnano
Download or read book Design and Development of Nanostructured Thin Films written by Antonella Macagnano and published by MDPI. This book was released on 2020-05-13 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to their unique size-dependent physicochemical properties, nanostructured thin films are used in a wide range of applications from smart coating and drug delivery to electrocatalysis and highly-sensitive sensors. Depending on the targeted application and the deposition technique, these materials have been designed and developed by tuning their atomic-molecular 2D- and/or 3D-aggregation, thickness, crystallinity, and porosity, having effects on their optical, mechanical, catalytic, and conductive properties. Several open questions remain about the impact of nanomaterial production and use on environment and health. Many efforts are currently being made not only to prevent nanotechnologies and nanomaterials from contributing to environmental pollution but also to design nanomaterials to support, control, and protect the environment. This Special Issue aims to cover the recent advances in designing nanostructured films focusing on environmental issues related to their fabrication processes (e.g., low power and low cost technologies, the use of environmentally friendly solvents), their precursors (e.g., waste-recycled, bio-based, biodegradable, and natural materials), their applications (e.g., controlled release of chemicals, mimicking of natural processes, and clean energy conversion and storage), and their use in monitoring environment pollution (e.g., sensors optically- or electrically-sensitive to pollutants)
Book Synopsis Gate Dielectrics and MOS ULSIs by : Takashi Hori
Download or read book Gate Dielectrics and MOS ULSIs written by Takashi Hori and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.
Book Synopsis Transparent Oxide Electronics by : Pedro Barquinha
Download or read book Transparent Oxide Electronics written by Pedro Barquinha and published by John Wiley & Sons. This book was released on 2012-03-15 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at low-cost, disposable and lightweight devices for the next generation of ergonomic and functional discrete devices. Chapters cover: Properties and applications of n-type oxide semiconductors P-type conductors and semiconductors, including copper oxide and tin monoxide Low-temperature processed dielectrics n and p-type thin film transistors (TFTs) – structure, physics and brief history Paper electronics – Paper transistors, paper memories and paper batteries Applications of oxide TFTs – transparent circuits, active matrices for displays and biosensors Written by a team of renowned world experts, Transparent Oxide Electronics: From Materials to Devices gives an overview of the world of transparent electronics, and showcases groundbreaking work on paper transistors
Book Synopsis The Physics of Semiconductor Devices by : R. K. Sharma
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1299 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Book Synopsis Chemically Deposited Nanocrystalline Metal Oxide Thin Films by : Fabian I. Ezema
Download or read book Chemically Deposited Nanocrystalline Metal Oxide Thin Films written by Fabian I. Ezema and published by Springer Nature. This book was released on 2021-06-26 with total page 926 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book guides beginners in the areas of thin film preparation, characterization, and device making, while providing insight into these areas for experts. As chemically deposited metal oxides are currently gaining attention in development of devices such as solar cells, supercapacitors, batteries, sensors, etc., the book illustrates how the chemical deposition route is emerging as a relatively inexpensive, simple, and convenient solution for large area deposition. The advancement in the nanostructured materials for the development of devices is fully discussed.
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Book Synopsis Thin Film Metal-Oxides by : Shriram Ramanathan
Download or read book Thin Film Metal-Oxides written by Shriram Ramanathan and published by Springer Science & Business Media. This book was released on 2009-12-03 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
