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Microstructural Investigation Of Defects In Epitaxial Gaas Grown On Mismatched Ge And Sige Si Substrates
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Book Synopsis Microstructural Investigation of Defects in Epitaxial GaAs Grown on Mismatched Ge and SiGe/Si Substrates by : Boeckl John J.
Download or read book Microstructural Investigation of Defects in Epitaxial GaAs Grown on Mismatched Ge and SiGe/Si Substrates written by Boeckl John J. and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this dissertation we report on the structural quality of the GaAs/Ge interface for GaAs nucleation by solid source molecular beam epitaxy (MBE). Through feedback from these characterizations, optimized growth methods are established, demonstrating the ability to grow defect-free epitaxial GaAs films on Ge substrates. We also present data on the electrical activity associated with defects that result if the growth is not fully controlled. In theses studies we exploit a novel use of an electron beam induced current (EBIC) technique to show the electrical activity associated with anti-phase domains and inter-diffusion from regions as small as 100 nm. Integrating this GaAs MBE nucleation methodology on the SiGe graded substrates we show that the GaAs stoichiometry and material properties transfer without degradation from the higher threading dislocation density of the SiGe substrates. In these studies we show that fundamental defects such as; threading dislocation, anti-phase domains, and atomic inter-diffusion are controlled to a level that enables growth of extremely high quality GaAs device layers. Combined with the low TDD enabled by the SiGe graded buffer, record GaAs/Si minority carrier lifetimes in excess of 10 ns have been achieved. However, other larger scale defects are shown to have a limiting effect on large area device performance. One such morphological surface defect, known as the "bat", is generated during the UHVCVD SiGe growth. The defect was comprehensively studied and results indicate that the impact on GaAs device performance was due to dislocation clusters in MBE device layers. Comparison analysis with GaAs overgrowth via metal organic chemical vapor deposition (MOCVD) demonstrated this growth method produced fully-operational large-area device structure. A model relating surface growth rates to an incomplete lattice-mismatch relaxation predicts the formation of these clusters. While challenges remain for monolithic III/V optoelectronic integration on Si, it is clear that the demonstration of successful GaAs nucleation on the SiGe substrate represents a significant milestone on the path to the final goal of truly integrated III-V devices with Si integrated circuits.
Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 780 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices by : D. Harame
Download or read book SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices written by D. Harame and published by The Electrochemical Society. This book was released on 2010-10 with total page 1066 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Book Synopsis Molecular Beam Epitaxial Growth of GaAs on Ge Substrates for Future Photonic Device Application by :
Download or read book Molecular Beam Epitaxial Growth of GaAs on Ge Substrates for Future Photonic Device Application written by and published by . This book was released on 2010 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs is grown on Ge substrates by Molecular Beam Epitaxy (MBE) based on the fact that GaAs and Ge are lattice-matched materials. However, GaAs is a III-V compound semiconductor. When GaAs is grown on group IV Ge substrates, the anti-phase domain (APD) occurs due to randomness of group III and group V atoms grown as the first atomic layer at different seeding positions on Ge substrates. We investigate the growth conditions to obtain the large domains of GaAs epitaxial layer on Ge substrates. Migration-enhanced epitaxy (MEE) is used in our growth process. InAs QDs are grown on GaAs/Ge substrates having anti-phase domains (APDs). InAs QDs align in the specific crystallographic direction for each domain. The morphology of GaAs on Ge substrates is observed by atomic force microscopy (AFM). Large domain size of GaAs can be obtained by varying the GaAs thickness. TEM images of GaAs on Ge samples are also investigated. The defects at the domain interfaces are observed. The crystal quailty of GaAs is studied by X-ray diffraction (XRD) method. Ohmic contacts and Schottky contacts to GaAs on Ge samples are prepared by the thermal evaporation. The I-V characteristics of the samples are measured showing resistive combined materials while another samples act as a photodetector. Photoconductivity measurements of GaAs on Ge samples are conducted to study their spectral responses. Photoluminescence (PL) of GaAs grown on Ge substrates is investigated. PL result does not show any emission peaks from InAs QDs.
Download or read book ISTFA 2012 written by ASM International and published by ASM International. This book was released on 2012 with total page 643 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2018-10-08 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
Book Synopsis Defects Reduction in GaAs Epitaxial Films Grown on Si Substrates by : Chang-Lin Tarn
Download or read book Defects Reduction in GaAs Epitaxial Films Grown on Si Substrates written by Chang-Lin Tarn and published by . This book was released on 1989 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth of Relaxed Ge Buffers on (111) and (110) Si Substrates Using RP-CVD. by : Van H. Nguyen
Download or read book Epitaxial Growth of Relaxed Ge Buffers on (111) and (110) Si Substrates Using RP-CVD. written by Van H. Nguyen and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The continued scaling of Si metal oxide semiconductor field effect transistor (MOSFET) devices to enhance performance is reaching its fundamental limits and the need for new device architecture and/or new materials is driving research and development within the semiconductor industry. Germanium, with its much higher intrinsic carrier mobilities, has a considerable advantage over Si as a channel material and its compatibility with current complementary metal oxide semiconductor (CMOS) technology makes it a very promising candidate. There is currently significant technological interest in the epitaxial growth of high quality relaxed Ge layers directly on Si substrates for potential applications including: high-mobility metal-oxide-semiconductor field-effect-transistors (MOSFETs), infrared photodetectors, solar cells and III-V integration. The crystallographic orientation of the substrate also influences the inversion layer mobility in transistors; compared to (100) orientation, Ge grown on (111) and (110) substrates can considerably enhance the carrier mobilities for electrons and holes. The 4.2% mismatch between Ge and Si is, however, a major drawback for the growth of high quality epitaxial layers, as 3-dimensional islanding, surface roughening and the generation of a high density of defects can occur which are all detrimental to performance of prospective devices. In particular, epitaxial growth on (110) and (111) surfaces is more susceptible to the formation of extended stacking faults as the gliding sequence of the dissociated 30° and 90° partial dislocations is reversed with respect to that for the (100) surface. This means that the concept of a thick graded buffer for gradual strain relaxation is not as easily applicable in the case of (111) and (110) substrates. In this work, we have investigated the growth of relaxed Ge films on (111) and (110) Si substrates by reduced-pressure chemical vapour deposition (RP-CVD) in an ASM Epsilon 2000 reactor using the high temperature/ low temperature growth technique, which comprises of a thin low temperature (LT) Ge seed, a thick high temperature (HT) Ge layer and subsequent in-situ high temperature H2 anneal. We will show how the growth conditions influence both the presence and nature of defects within the Ge layers, their surface morphology and also the state of relaxation using transmission electron microscopy (TEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. Formation of islands in the 10 nm Ge seed layer has led to a significant enhancement in the quality of the buffer by providing a effective way to relax the layers, reducing the densities of stacking faults and threading dislocations by at least a decade compared to previous studies and also producing a smooth surface around 2 nm rms.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low-Energy Electron Diffraction Study of the Surface-Defect Structure of Ge Grown Epitaxially on GaAs (110). by : H. M. Clearfield
Download or read book Low-Energy Electron Diffraction Study of the Surface-Defect Structure of Ge Grown Epitaxially on GaAs (110). written by H. M. Clearfield and published by . This book was released on 1981 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: This abstract summarizes initial results of an investigation of the surface defects in Ge films grown epitaxially on cleaved GaAs(110). Most of the effort has centered on characterizing the electronic properties of the interface, i.e., band gap discontinuities, localized bonding, work function changes, and abruptness of the interface. X-ray and ultraviolet photoelectron spectroscopy have been used as the main analytical techniques in these investigations. In summary, we have demonstrated that it is possible to extract quantitative information on structural defects even for (1x1) overlayers using LEED. For epitaxial growth of Ge on GaAs(110) under the present experimental conditions, the overlayers appear to have a higher concentration of extended defects than the substrates on which they are grown. At low growth temperatures, this may be due to a mechanism that inhibits layer-by-layer growth, causing the surface to be highly stepped. For annealed layers, dislocations grown into the film may propagate to the surface and cause the Ge layer to be polycrystalline but sill oriented. The symmetry of the patterns differs from that observed by Moench and Gant. It is possible that the appearance of superlattices is related to growth mode.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microscopy of Semiconducting Materials by : A.G Cullis
Download or read book Microscopy of Semiconducting Materials written by A.G Cullis and published by CRC Press. This book was released on 2000-01-01 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots. This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Book Synopsis Growth and Characterization of GaAs/Ge Epilayers Grown on Si Substrates by Molecular Beam Epitaxy by : Peter Sheldon
Download or read book Growth and Characterization of GaAs/Ge Epilayers Grown on Si Substrates by Molecular Beam Epitaxy written by Peter Sheldon and published by . This book was released on 1986 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Research in Materials by : Massachusetts Institute of Technology
Download or read book Research in Materials written by Massachusetts Institute of Technology and published by . This book was released on 1996 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:
