Metalorganic Vapour Phase Epitaxy 1984 Proceedings Of The International Conference On Metalorganic Vapour Phase Epitaxy 2nd Held At Sheffield United Kingdom On 10 12 April 1984

Author : J. B. Mullin
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (227 download)

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Download or read book Metalorganic Vapour Phase Epitaxy 1984: Proceedings of the International Conference on Metalorganic Vapour Phase Epitaxy (2nd) Held at Sheffield (United Kingdom) on 10-12 April 1984 written by J. B. Mullin and published by . This book was released on 1984 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: New routes were reported, including an electrolytic process, for the direct preparation of alkyls and their related adducts. In the epitaxial area significant advances were reported in the growth of indium compounds such as InP and Ga1-xInxAs. The minimization of compositional and doping transients during switching using vent-run facilities and other modifications have removed what was once thought to be a potential disadvantage of MOPVE compared to MBE for producing atomically sharp interfaces. MOPVE state of art lasers were reported not only for GaAs/Ga1-xAlxAs but also most impressive results were quoted for the quaternary system GaInAsP/InP. Developments in II-VI growth showed how rapidly the field is developing both in the narrow energy gap compounds such as CdxHg1-xTe and in the higher energy gap fields with materials like ZnS1-xSex. A potentially important development has been the use of photons in promoting low temperature epitaxial growth for GaAs, and for HgTe, In the case of HgTe the photolytic process appears to involve a surface controlled deposition process, probably the first epitaxial growth of a compound semiconductor using photolytic decomposition of an organometallic compound.