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Metallic Impurities In Gallium Nitride Grown By Molecular Beam Epitaxy
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Book Synopsis Metallic Impurities in Gallium Nitride Grown by Molecular Beam Epitaxy by :
Download or read book Metallic Impurities in Gallium Nitride Grown by Molecular Beam Epitaxy written by and published by . This book was released on 1997 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 102° cm{sup -3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 [mu]m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.
Book Synopsis Electrical, Optical, and Defect Properties of Carbon-doped Gallium Nitride Grown by Molecular-beam Epitaxy by : Robert David Armitage
Download or read book Electrical, Optical, and Defect Properties of Carbon-doped Gallium Nitride Grown by Molecular-beam Epitaxy written by Robert David Armitage and published by . This book was released on 2003 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Influence of Impurities as Surfactants on the Growth of Gallium Nitride Thin Film by Metal Organic Vapor Phase Epitaxy by : Ling Zhang
Download or read book Influence of Impurities as Surfactants on the Growth of Gallium Nitride Thin Film by Metal Organic Vapor Phase Epitaxy written by Ling Zhang and published by . This book was released on 2002 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Related Materials by :
Download or read book Gallium Nitride and Related Materials written by and published by . This book was released on 1997 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride Semiconductor Device Issues by : James Suk Chan
Download or read book Gallium Nitride Semiconductor Device Issues written by James Suk Chan and published by . This book was released on 1995 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Related Materials: Volume 395 by : F. A. Ponce
Download or read book Gallium Nitride and Related Materials: Volume 395 written by F. A. Ponce and published by . This book was released on 1996-09-04 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
Book Synopsis Roadmap for Skutterudites and Point Defects in GaN by :
Download or read book Roadmap for Skutterudites and Point Defects in GaN written by and published by Elsevier. This book was released on 2022-11-08 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals, Volume 111 highlights new advances in the field, with this new volume presenting interesting chapters on Precision Medicine. Each chapter is written by an international board of authors. Provides the authority and expertise of leading contributors from an international board of authors Presents the latest release in the Semiconductors and Semimetals series Updated release includes the latest information on Topological Insulator and Related Topics
Book Synopsis Gallium Nitride and Related Materials II: Volume 468 by : C. R. Abernathy
Download or read book Gallium Nitride and Related Materials II: Volume 468 written by C. R. Abernathy and published by Materials Research Society. This book was released on 1997-08-13 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.
Book Synopsis Proceedings of the Second Symposium on III-V Nitride Materials and Processes by : C. R. Abernathy
Download or read book Proceedings of the Second Symposium on III-V Nitride Materials and Processes written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1998 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development of Epitaxial N and P-type Gallium Nitride by Ionized Molecular Beam Epitaxy and Reactive Magnetron Sputtering by : Jennifer Taitt Ross
Download or read book Development of Epitaxial N and P-type Gallium Nitride by Ionized Molecular Beam Epitaxy and Reactive Magnetron Sputtering written by Jennifer Taitt Ross and published by . This book was released on 1993 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Book Synopsis Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers by : Susan C. Palmateer
Download or read book Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers written by Susan C. Palmateer and published by . This book was released on 1985 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Gallium Nitride Using Molecular Beam Epitaxy by : Jun Chen
Download or read book Growth of Gallium Nitride Using Molecular Beam Epitaxy written by Jun Chen and published by . This book was released on 2001 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Transmission Electron Microscopy Studies of Gallium Nitride Nanostructures Grown by Molecular Beam Epitaxy by :
Download or read book Transmission Electron Microscopy Studies of Gallium Nitride Nanostructures Grown by Molecular Beam Epitaxy written by and published by . This book was released on 2010 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of Research on Industrial Informatics and Manufacturing Intelligence: Innovations and Solutions by : Khan, Mohammad Ayoub
Download or read book Handbook of Research on Industrial Informatics and Manufacturing Intelligence: Innovations and Solutions written by Khan, Mohammad Ayoub and published by IGI Global. This book was released on 2012-03-31 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This book is the best source for the most current, relevant, cutting edge research in the field of industrial informatics focusing on different methodologies of information technologies to enhance industrial fabrication, intelligence, and manufacturing processes"--Provided by publisher.
Book Synopsis Handbook of Nanophysics by : Klaus D. Sattler
Download or read book Handbook of Nanophysics written by Klaus D. Sattler and published by CRC Press. This book was released on 2010-09-17 with total page 770 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intensive research on fullerenes, nanoparticles, and quantum dots in the 1990s led to interest in nanotubes and nanowires in subsequent years. Handbook of Nanophysics: Nanotubes and Nanowires focuses on the fundamental physics and latest applications of these important nanoscale materials and structures. Each peer-reviewed chapter contains a broad-
