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Low Temperature Silicon Oxide And Flourinated Silicon Oxide Films Prepared By Plasma Enhanced Chemical Vapor Deposition Using Disilane As Silicon Precursor
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Book Synopsis Low Temperature Silicon Oxide and Flourinated Silicon Oxide Films Prepared by Plasma Enhanced Chemical Vapor Deposition Using Disilane as Silicon Precursor by : Juho Song
Download or read book Low Temperature Silicon Oxide and Flourinated Silicon Oxide Films Prepared by Plasma Enhanced Chemical Vapor Deposition Using Disilane as Silicon Precursor written by Juho Song and published by . This book was released on 1996 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Remote Plasma Enhanced Chemical Vapor Deposition of Fluorinated Silicon Oxide Films Using 1,2bis(methyldifluorosilyl)ethane and Triethoxyfluorosilane by : Zhongping Jin
Download or read book Remote Plasma Enhanced Chemical Vapor Deposition of Fluorinated Silicon Oxide Films Using 1,2bis(methyldifluorosilyl)ethane and Triethoxyfluorosilane written by Zhongping Jin and published by . This book was released on 2005 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Formation of Low Temperature Silicon Dioxide Films Using Chemical Vapor Deposition by : Hsiao-Hui Chen
Download or read book Formation of Low Temperature Silicon Dioxide Films Using Chemical Vapor Deposition written by Hsiao-Hui Chen and published by . This book was released on 1991 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. The process was characterized by applying traditional statistical studies and response surface technique. The uniformities within wafer and from wafer to wafer were examined by determining the mean and the standard deviation of films thicknesses. Response surface methodology was employed to determine the optimum process conditions. Time, temperature and gas flow ratio were used as the experimental factors. Index of refraction and deposition rate were used as the experimental responses. Additionally, etch rate, density, dielectric constant and infrared (IR) spectra were found for the silicon dioxide films prepared at the determined optimum condition. The IR spectra were obtained by employing Fourier Transform Infrared Spectroscopy (FTIR). The average deposition rate was found to be 46 A per minute and the average index of refraction was 1.44. The calculated density, activation energy, etch rate, dielectric constant and dielectric strength agreed with reported values. A double metal test run was performed using LTO oxide. The results indicated that the recommended baseline LTO process is suitable for multilayer metallization processes."--Abstract.
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1996 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Official Gazette of the United States Patent and Trademark Office by :
Download or read book Official Gazette of the United States Patent and Trademark Office written by and published by . This book was released on 1997 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1997 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ceramic Abstracts written by and published by . This book was released on 1997 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Temperature Plasma Enhanced Chemical Vapor Deposition of Silicon Oxide and Microcrystalline Silicon on Organic and Inorganic Substrates by : Christopher G. Makosiej
Download or read book Low Temperature Plasma Enhanced Chemical Vapor Deposition of Silicon Oxide and Microcrystalline Silicon on Organic and Inorganic Substrates written by Christopher G. Makosiej and published by . This book was released on 1999 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films by :
Download or read book Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Depositions of high quality SiO[sub 2] and SnO[sub 2] films from the reaction of homoleptic amido precursors M(NMe[sub 2])4 (M = Si, Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 [plus-minus] 5 atom %. They are deposited with growth rates from 380 to 900 [angstrom]/min. The refractive indexes of the SiO[sub 2] films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm[sup [minus]1]. X-Ray diffraction studies reveal that the SiO[sub 2] film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO[sub 2] films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10[sup [minus]2] to 10[sup [minus]3] [Omega]cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.
Book Synopsis Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride and Oxynitride Films Using Disilane as Silicon Source by : Giridhar Nallapati
Download or read book Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride and Oxynitride Films Using Disilane as Silicon Source written by Giridhar Nallapati and published by . This book was released on 1999 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Dielectric Constant Silicon Carbonitride Films Prepared by Plasma-enhanced Chemical Vapor Deposition by :
Download or read book Low Dielectric Constant Silicon Carbonitride Films Prepared by Plasma-enhanced Chemical Vapor Deposition written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Dioxide Deposition at 100 C Using Vacuum Ultraviolet Light by : J. Marks
Download or read book Silicon Dioxide Deposition at 100 C Using Vacuum Ultraviolet Light written by J. Marks and published by . This book was released on 1988 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of silicon dioxide are used extensively as insulators in the fabrication of many semiconductor devices. Silicon dioxide films deposited by chemical vapor deposition typically require temperatures near 800 C. However, some processes, such as the fabrication of devices with multilevel aluminum interconnects, require deposition temperatures below 350 C. Several techniques that have been developed for low-temperature deposition of silicon dioxide include plasma-assisted deposition, low-pressure chemical vapor deposition, and photo-assisted chemical vapor deposition. Some photochemical deposition reaction use Hg vapor as a photochemical catalyst to decompose nitrous oxide in the pressure of silane. Films deposited with these reactions have been found to have adhesion problems, and tend to be in completely oxidized. Several other deposition reactions using photodissociation of molecular oxygen or disilane have been reported. (jes).
Book Synopsis Plasma-enhanced Chemical Vapor Deposition of Silicon Dioxide by : Arjen Boogaard
Download or read book Plasma-enhanced Chemical Vapor Deposition of Silicon Dioxide written by Arjen Boogaard and published by . This book was released on 2011 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Plasma-enhanced Chemical Vapor Deposition of Silicon Oxynitrides by : Joseph Edward Schoenholtz
Download or read book Plasma-enhanced Chemical Vapor Deposition of Silicon Oxynitrides written by Joseph Edward Schoenholtz and published by . This book was released on 1986 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bulk Properties of Silicon Dioxide Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition by : Robert George Andosca
Download or read book Bulk Properties of Silicon Dioxide Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition written by Robert George Andosca and published by . This book was released on 1991 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Conference Papers Index written by and published by . This book was released on 1988 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monthly. Papers presented at recent meeting held all over the world by scientific, technical, engineering and medical groups. Sources are meeting programs and abstract publications, as well as questionnaires. Arranged under 17 subject sections, 7 of direct interest to the life scientist. Full programs of meetings listed under sections. Entry gives citation number, paper title, name, mailing address, and any ordering number assigned. Quarterly and annual indexes to subjects, authors, and programs (not available in monthly issues).
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
