Long Term Reliability Of High Speed Sige Si Heterojunction Bipolar Transistors

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Long-Term Reliability of High Speed Sige/Si Heterojunction Bipolar Transistors

Author : National Aeronautics and Space Administration (NASA)
Publisher : Createspace Independent Publishing Platform
ISBN 13 : 9781721575299
Total Pages : 24 pages
Book Rating : 4.5/5 (752 download)

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Book Synopsis Long-Term Reliability of High Speed Sige/Si Heterojunction Bipolar Transistors by : National Aeronautics and Space Administration (NASA)

Download or read book Long-Term Reliability of High Speed Sige/Si Heterojunction Bipolar Transistors written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-06-20 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data. Ponchak

Development of SiGe-based Power Heterojunction Bipolar Transistors and Their Application to Microwave Power Amplification

Author : Zhenqiang Ma
Publisher :
ISBN 13 :
Total Pages : 310 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Development of SiGe-based Power Heterojunction Bipolar Transistors and Their Application to Microwave Power Amplification by : Zhenqiang Ma

Download or read book Development of SiGe-based Power Heterojunction Bipolar Transistors and Their Application to Microwave Power Amplification written by Zhenqiang Ma and published by . This book was released on 2001 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Comprehensive Semiconductor Science and Technology

Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Comprehensive Semiconductor Science and Technology by :

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications

Author : Niccolò Rinaldi
Publisher : River Publishers
ISBN 13 : 8793519613
Total Pages : 378 pages
Book Rating : 4.7/5 (935 download)

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Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications by : Niccolò Rinaldi

Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

Strained Silicon Heterostructures

Author : C. K. Maiti
Publisher : IET
ISBN 13 : 9780852967782
Total Pages : 520 pages
Book Rating : 4.9/5 (677 download)

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Book Synopsis Strained Silicon Heterostructures by : C. K. Maiti

Download or read book Strained Silicon Heterostructures written by C. K. Maiti and published by IET. This book was released on 2001 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Silicon Heterostructure Handbook

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420026585
Total Pages : 1248 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Silicon Heterostructure Handbook by : John D. Cressler

Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Silicon Heterostructure Devices

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066919
Total Pages : 472 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Silicon Heterostructure Devices by : John D. Cressler

Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

High-Frequency Bipolar Transistors

Author : Michael Reisch
Publisher : Springer Science & Business Media
ISBN 13 : 364255900X
Total Pages : 671 pages
Book Rating : 4.6/5 (425 download)

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Book Synopsis High-Frequency Bipolar Transistors by : Michael Reisch

Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.

Chemical Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

University Program Management Information System

Author :
Publisher :
ISBN 13 :
Total Pages : 692 pages
Book Rating : 4.:/5 (317 download)

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Book Synopsis University Program Management Information System by :

Download or read book University Program Management Information System written by and published by . This book was released on 2001 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The VLSI Handbook

Author : Wai-Kai Chen
Publisher : CRC Press
ISBN 13 : 9781420049671
Total Pages : 1788 pages
Book Rating : 4.0/5 (496 download)

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Book Synopsis The VLSI Handbook by : Wai-Kai Chen

Download or read book The VLSI Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2019-07-17 with total page 1788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.

Proceedings of the ... IEEE International Caracas Conference on Devices, Circuits and Systems

Author :
Publisher :
ISBN 13 :
Total Pages : 394 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Proceedings of the ... IEEE International Caracas Conference on Devices, Circuits and Systems by :

Download or read book Proceedings of the ... IEEE International Caracas Conference on Devices, Circuits and Systems written by and published by . This book was released on 2004 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Meeting of Board of Regents

Author : University of Michigan. Board of Regents
Publisher :
ISBN 13 :
Total Pages : 484 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Meeting of Board of Regents by : University of Michigan. Board of Regents

Download or read book Meeting of Board of Regents written by University of Michigan. Board of Regents and published by . This book was released on 2002-05 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Dissertation Abstracts International

Author :
Publisher :
ISBN 13 :
Total Pages : 884 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 884 pages. Available in PDF, EPUB and Kindle. Book excerpt:

SiGe Heterojunction Bipolar Transistors

Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Terahertz Biomedical Science and Technology

Author : Joo-Hiuk Son
Publisher : CRC Press
ISBN 13 : 146657044X
Total Pages : 382 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Terahertz Biomedical Science and Technology by : Joo-Hiuk Son

Download or read book Terahertz Biomedical Science and Technology written by Joo-Hiuk Son and published by CRC Press. This book was released on 2014-06-13 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of applications including scientific spectroscopy, security screening, and medical imaging have benefitted from the development and utilization of new and emerging terahertz (THz) generation and detection techniques. Exploring recent discoveries and the advancements of biological behaviors through THz spectroscopy and imaging and the development of THz medical techniques, Terahertz Biomedical Science and Technology contains contributions from scientists and researchers in the terahertz biomedical field and is exclusively dedicated to new and emerging terahertz biomedical research and applications. This text offers an assessment of terahertz technology, and provides a compilation of fundamental biological studies conducted using terahertz waves. It introduces THz electromagnetic waves as a new tool for convergent studies, includes laser-based generation techniques and solid-state devices, contains a number of detectors, and discusses high-field generation methods. The material covers recent advancements in terahertz imaging for medical applications—most specifically in cancer diagnosis—reviewing the current status of the THz imaging technique for diagnosing cancers, and exploring the potential medical applications of THz radiation. It also considers the development of future medical applications using terahertz technology. Summarizes the recent progress made in THz waveguides, which are absolutely essential in the development of THz endoscopes Describes the dynamic imaging of drug absorption in skin, exploiting the sensitivity of THz waves to pharmaceutical materials Explores the principle and applications of THz molecular imaging techniques using nanoparticle probes Scientists and engineers involved in biological research and medical applications using optical techniques, as well as graduate students and instructors in optics, physics, electrical engineering, biology, chemistry, and medicine can benefit from this text which highlights new and emerging biomedical studies utilizing novel THz wave techniques.

Extreme Environment Electronics

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351832808
Total Pages : 1044 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Extreme Environment Electronics by : John D. Cressler

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.