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Author : F. J. Grunthaner
Publisher :
ISBN 13 :
Total Pages : 18 pages
Book Rating : 4.:/5 (186 download)
Download or read book Laser-assisted Molecular Beam Epitaxial Growth of GaAs on Si (100) written by F. J. Grunthaner and published by . This book was released on 1988 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : W. I. Wang
Publisher :
ISBN 13 :
Total Pages : 4 pages
Book Rating : 4.:/5 (227 download)
Download or read book Molecular Beam Epitaxial Growth and Material Properties of GaAs and AlGaAs on Si(100). written by W. I. Wang and published by . This book was released on 1984 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : E. Kasper
Publisher : CRC Press
ISBN 13 : 1351085077
Total Pages : 306 pages
Book Rating : 4.3/5 (51 download)
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author :
Publisher :
ISBN 13 :
Total Pages : 193 pages
Book Rating : 4.:/5 (227 download)
Download or read book Photo-Assisted Epitaxial Growth for III-V Semiconductors. Selective Area Epitaxy written by and published by . This book was released on 1995 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated laser-enhanced growth of GaAs by metal-organic molecular beam epitaxy (MOMBE) with triethylgallium (TEGa) and solid arsenic and by chemical beam epitaxy (CBE) with TEGa and a safer, alternative organometallic precursor, tris dimethylaminoarsenic (TDMAAs), to the highly toxic arsine. We discovered that with TDMAAs we can increase the laser-enhanced growth temperature window by 100 deg C, as compared to that with arsine or arsenic. CBE growth of InP and InGaP using tris- dimethylaminophosphorus (TDMAP) and tertiarybutylphosphine (TBP) is also reported. We discovered the etching effect of TDMAAs and TDMAP, and investigated laser-enhanced etching of GaAs by TDMAAs. We also investigated laser-enhanced carbon and silicon doping in GaAs with diiodomethane (CI2H2) and disilane, respectively. We can achieve a two-order-of-magnitude enhancement in p-type carbon doping with CI2H2 by laser irradiation. Finally, we report on lateral bandgap variation by laser-modified compositional change in InGaAs/GaAs multiple quantum wells grown by MOMBE and CBE. jg p.3.
Author : A. Madhukar
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.3/5 (91 download)
Download or read book Growth of Compound Semiconductor Structures written by A. Madhukar and published by . This book was released on 1988 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 58 pages
Book Rating : 4.:/5 (227 download)
Download or read book Photo-Assisted Epitaxial Growth for III-V Semiconductors written by and published by . This book was released on 1993 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photo-assisted metalorganic molecular beam epitaxy (MOMBE), with an argon ion laser, has been used to grow GaAs. The substrate temperature was calibrated by an infrared laser interferometric technique with an accuracy of + or - 3 deg C. The MOMBE growth of GaAs, InAs, and InGaAs was first studied, by monitoring intensity oscillations of reflection high-energy electron diffraction (RHEED). The actual arsenic incorporation rate was deduced from As-induced RHEED oscillations, and a unity V/III incorporation ratio could be obtained. In growing InGaAs, indium segregation suppresses the InGaAs growth rate. In laser- assisted MOMBE the enhancement of arsenic desorption with laser irradiation and its effects were observed. The decomposition of triethylgallium and desorption of arsenic compete with each other, resulting in a saturation in the enhanced growth rate in the arsenic-controlled growth regime. The initial growth behavior was also studied by inspecting the details of the RHEED behavior and arsenic surface coverage ... Molecular beam epitaxy, Photo-assisted, Metal-organics gallium arsenide, Indium arsenide, Argon ion laser.
Author : John Orton
Publisher : OUP Oxford
ISBN 13 : 0191061166
Total Pages : 529 pages
Book Rating : 4.1/5 (91 download)
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author :
Publisher :
ISBN 13 :
Total Pages : 456 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author : Jhang Woo Lee
Publisher :
ISBN 13 :
Total Pages : 250 pages
Book Rating : 4.:/5 (145 download)
Download or read book Molecular Beam Epitaxial Growth and Applications for Laser Diodes of AlAs-GaAs Superlattices written by Jhang Woo Lee and published by . This book was released on 1984 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hyunchul Sohn
Publisher :
ISBN 13 :
Total Pages : 338 pages
Book Rating : 4.:/5 (33 download)
Download or read book The Residual Strain in GaAs Epitaxial Layers Grown in Si Substrates by Molecular Beam Epitaxy written by Hyunchul Sohn and published by . This book was released on 1993 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Morton B. Panish
Publisher : Springer Science & Business Media
ISBN 13 : 3642781276
Total Pages : 441 pages
Book Rating : 4.6/5 (427 download)
Download or read book Gas Source Molecular Beam Epitaxy written by Morton B. Panish and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Author : Zhe Chuan Feng
Publisher : CRC Press
ISBN 13 : 1439855706
Total Pages : 449 pages
Book Rating : 4.4/5 (398 download)
Download or read book Handbook of Zinc Oxide and Related Materials written by Zhe Chuan Feng and published by CRC Press. This book was released on 2012-09-26 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering and materials science, Handbook of Zinc Oxide and Related Materials provides a comprehensive, up-to-date review of various technological aspects of ZnO. Volume One presents fundamental knowledge on ZnO-based materials and technologies. It covers the basic physics and chemistry of ZnO and related compound semiconductors and alloys. The first part of this volume discusses preparation methods, modeling, and doping strategies. It then describes epitaxial methods used to create thin films and functional materials. The book concludes with a review of alloys and related materials, exploring their preparation, bulk properties, and applications. Covering key properties and important technologies of ZnO-based devices and nano-engineering, the handbook highlights the potential of this wide gap semiconductor. It also illustrates the remaining challenging issues in nanomaterial preparation and device fabrication for R&D in the twenty-first century.
Author : K. Eberl
Publisher : Springer Science & Business Media
ISBN 13 : 9401103410
Total Pages : 386 pages
Book Rating : 4.4/5 (11 download)
Download or read book Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates written by K. Eberl and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the NATO Advanced Research Workshop, Ringberg in Rottach Egern, Germany, February 20--24, 1995
Author : Marian A. Herman
Publisher : Springer Science & Business Media
ISBN 13 : 3642970982
Total Pages : 394 pages
Book Rating : 4.6/5 (429 download)
Download or read book Molecular Beam Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Author :
Publisher :
ISBN 13 :
Total Pages : 2240 pages
Book Rating : 4.3/5 (243 download)
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Madeleine Glick
Publisher : Elsevier
ISBN 13 : 032391831X
Total Pages : 523 pages
Book Rating : 4.3/5 (239 download)
Download or read book Integrated Photonics for Data Communication Applications written by Madeleine Glick and published by Elsevier. This book was released on 2023-07-26 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrated Photonics for Data Communications Applications reviews the key concepts, design principles, performance metrics and manufacturing processes from advanced photonic devices to integrated photonic circuits. The book presents an overview of the trends and commercial needs of data communication in data centers and high-performance computing, with contributions from end users presenting key performance indicators. In addition, the fundamental building blocks are reviewed, along with the devices (lasers, modulators, photodetectors and passive devices) that are the individual elements that make up the photonic circuits. These chapters include an overview of device structure and design principles and their impact on performance. Following sections focus on putting these devices together to design and fabricate application-specific photonic integrated circuits to meet performance requirements, along with key areas and challenges critical to the commercial manufacturing of photonic integrated circuits and the supply chains being developed to support innovation and market integration are discussed. This series is led by Dr. Lionel Kimerling Executive at AIM Photonics Academy and Thomas Lord Professor of Materials Science and Engineering at MIT and Dr. Sajan Saini Education Director at AIM Photonics Academy at MIT. Each edited volume features thought-leaders from academia and industry in the four application area fronts (data communications, high-speed wireless, smart sensing, and imaging) and addresses the latest advances. Includes contributions from leading experts and end-users across academia and industry working on the most exciting research directions of integrated photonics for data communications applications Provides an overview of data communication-specific integrated photonics starting from fundamental building block devices to photonic integrated circuits to manufacturing tools and processes Presents key performance metrics, design principles, performance impact of manufacturing variations and operating conditions, as well as pivotal performance benchmarks
