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Investigation And Engineering Of The Homogeneity And Current Injection Of Molecular Beam Epitaxy Grown Iii Nitride Nanowire Ultraviolet Light Emitting Diodes
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Book Synopsis Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-nitride Nanowire Ultraviolet Light Emitting Diodes by : Brelon J. May
Download or read book Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-nitride Nanowire Ultraviolet Light Emitting Diodes written by Brelon J. May and published by . This book was released on 2019 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Self-assembled nanowires are attractive because of their innate ability to effectively strain relax without the creation of extended defects. This allows for interesting heteroepitaxial growths and extreme heterostructures. III-Nitride nanowires are of particular interest because of the wide range of direct bandgaps available in the material system, spanning form the infrared to the deep ultraviolet finding uses in sensors, photovoltaics, lasers and LEDs. The work presented here will be focused on nanowire LEDs with emission in the ultraviolet grown by molecular beam epitaxy. The first part of this work will discuss the possible inhomogeneities present in self-assembled nanowires and how these manifest themselves in ensemble devices. The effect of nonuniformities (specifically shorts) on the current spreading in devices where many individual diodes are wired in parallel is then addressed, and the use of a short-term-overload bias is shown as a way to reduce the presence of nonuniformities, increasing the efficiency of ensemble devices. Next, alternative substrates are investigated, with the growth of high-quality GaN nanowires being demonstrated on polycrystalline foils, the fabrication of the first UV LED grown directly on metal foil follows. The final portion of this work begins by addressing the grain-dependent uniformity issues present with growth on bulk polycrystalline foils through the use of thin nanocrystalline metal films and amorphous metals. Finally, a different nanowire LED structure is discussed in which the upper portion of the nanowires is coalesced to form a “thin-film” transparent conductive layer, enabling the substitution of the traditional fully conformal thin metal top contact with only a current spreading grid.
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Novel III-Nitride Growth by Ultraviolet Radiation Assisted Metal Organic Molecular Beam Epitaxy by : David Chu Pritchett
Download or read book Novel III-Nitride Growth by Ultraviolet Radiation Assisted Metal Organic Molecular Beam Epitaxy written by David Chu Pritchett and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: While modern epitaxial methods enable precise, monolayer (ML) control of the thin film deposition process, the complexity of certain device structures is ultimately limited by the capability and cost of the fabrication process. The objective of this work is to develop a pathway toward three-dimensional epitaxy (3DE) - the ability to intentionally and dynamically pattern regions of a film during the deposition process - in order to enable novel device concepts unbound by the traditional device fabrication paradigm. This work pioneers UV-assisted metal organic molecular beam epitaxy (MOMBE) as a particularly selective epitaxy technique to create a pathway toward 3DE of a crucial and topical material system - the III-Nitrides. A novel UV-assisted MOMBE system is developed enabling intense UV irradiation of films during growth. High quality, heavily (unintentionally) carbon-doped GaN is successfully grown by NH3-based MOMBE and for the first time InGaN, AlGaN, and magnesium-doped GaN are demonstrated by NH3-based MOMBE. Intense UV irradiation of films during NH3-based MOMBE significantly enhances photo-desorption of species during the growth process, subsequently affecting the resultant InGaN alloy composition, carbon dopant concentration, or magnesium dopant concentration. A digital micromirror device is introduced to pattern incident UV radiation during InGaN growth, demonstrating that the effects of photoexcitation during MOMBE which have been proposed, discovered, and identified by this thesis indeed can be leveraged to deposit an InGaN film that is compositionally patterned within the growth plane. The results demonstrate that the new approach presented herein is possible for the 3DE of III-Nitrides if additional challenges in practical implementation can be overcome.
Book Synopsis Optoelectronic Devices by : M Razeghi
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Book Synopsis Molecular Beam Epitaxy Grown III-nitride Materials for High-power and High-temperature Applications by : Gon Namkoong
Download or read book Molecular Beam Epitaxy Grown III-nitride Materials for High-power and High-temperature Applications written by Gon Namkoong and published by . This book was released on 2003 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanostructuring for Nitride Light-Emitting Diodes and Optical Cavities by : Kwai Hei Li
Download or read book Nanostructuring for Nitride Light-Emitting Diodes and Optical Cavities written by Kwai Hei Li and published by Springer. This book was released on 2015-12-08 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the design and fabrication of novel nanostructures in III-nitride material systems. It introduces an inexpensive and ultra-efficient nanopatterning method – nanosphere lithography (NSL) – used to develop diversely functional nanostructures, including clover-shaped photonic crystals, nanorings, and nanolenses. Furthermore, the research findings previously distributed in various international scientific journals and conference papers are brought together and methodically presented in a unified form. The book is of interest to postgraduate students, university researchers, R&D engineers and scientists in the fields of nanoelectronics, optoelectronics and photonics.
Book Synopsis III-nitride Devices and Nanoengineering by : Zhe Chuan Feng
Download or read book III-nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Book Synopsis Molecular Beam Epitaxy by : Brian R. Pamplin
Download or read book Molecular Beam Epitaxy written by Brian R. Pamplin and published by Pergamon. This book was released on 1980 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Nanowires by : J Arbiol
Download or read book Semiconductor Nanowires written by J Arbiol and published by Elsevier. This book was released on 2015-03-31 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. Explores a selection of advanced materials for semiconductor nanowires Outlines key techniques for the property assessment and characterization of semiconductor nanowires Covers a broad range of applications across a number of fields
Book Synopsis Light-Emitting Diodes by : Jinmin Li
Download or read book Light-Emitting Diodes written by Jinmin Li and published by Springer. This book was released on 2019-01-07 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive in scope, this book covers the latest progresses of theories, technologies and applications of LEDs based on III-V semiconductor materials, such as basic material physics, key device issues (homoepitaxy and heteroepitaxy of the materials on different substrates, quantum efficiency and novel structures, and more), packaging, and system integration. The authors describe the latest developments of LEDs with spectra coverage from ultra-violet (UV) to the entire visible light wavelength. The major aspects of LEDs, such as material growth, chip structure, packaging, and reliability are covered, as well as emerging and novel applications beyond the general and conventional lightings. This book, written by leading authorities in the field, is indispensable reading for researchers and students working with semiconductors, optoelectronics, and optics. Addresses novel LED applications such as LEDs for healthcare and wellbeing, horticulture, and animal breeding; Editor and chapter authors are global leading experts from the scientific and industry communities, and their latest research findings and achievements are included; Foreword by Hiroshi Amano, one of the 2014 winners of the Nobel Prize in Physics for his work on light-emitting diodes.
Book Synopsis Nanowire Electronics by : Guozhen Shen
Download or read book Nanowire Electronics written by Guozhen Shen and published by Springer. This book was released on 2018-11-23 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.
Book Synopsis III-Nitride Based Light Emitting Diodes and Applications by : Tae-Yeon Seong
Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.
Author :Workshop on Molecular Beam Epitaxy - Growth Physics and Technology Publisher : ISBN 13 : Total Pages :312 pages Book Rating :4.:/5 (634 download)
Book Synopsis Papers Presented at the Workshop on Molecular Beam Epitaxy - Growth Physics and Technology by : Workshop on Molecular Beam Epitaxy - Growth Physics and Technology
Download or read book Papers Presented at the Workshop on Molecular Beam Epitaxy - Growth Physics and Technology written by Workshop on Molecular Beam Epitaxy - Growth Physics and Technology and published by . This book was released on 2000 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Growth and Optical Properties of III-V Nanostructures Grown by Molecular Beam Epitaxy by : Gözde Tütüncüoglu
Download or read book The Growth and Optical Properties of III-V Nanostructures Grown by Molecular Beam Epitaxy written by Gözde Tütüncüoglu and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Mots-clés de l'autrice: III-V semiconductors ; nanowire ; nanombembrane ; nanoscale membrane ; nanoscale heterostructures ; molecular beam epitaxy ; optoelectronics.
Book Synopsis Molecular Beam Epitaxy of Nitrides: Theoretical Modeling and Process Simulation by :
Download or read book Molecular Beam Epitaxy of Nitrides: Theoretical Modeling and Process Simulation written by and published by . This book was released on 2003 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt: A rate equation approach is proposed based on physically sound surface processes to investigate the molecular beam epitaxy growth and doping of III-N using ammonia and EC plasma source. A surface-riding layer of Ga/In/Mg and ammonia or N plasma species with several associated physical and chemical processes is included in this model. In the case of ammonia, the simulated Ga incorporation rate as a function of ammonia pressure and substrate temperature are in excellent agreement with the experimental data. In the case of InGaN growth, results of In incorporation obtained from simulations and experiments are in excellent agreement for various growth conditions. In segregation is found to be negligible below 580 deg C and heavy above 640 deg C. For the given flux rates, it is found that Mg segregates to the surface with the zone is formed below the surface layer.
Book Synopsis Papers from the 20th North American Conference on Molecular Beam Epitaxy by : Peter G Newman
Download or read book Papers from the 20th North American Conference on Molecular Beam Epitaxy written by Peter G Newman and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Workshop on Molecular Beam Epitaxy - Growth Physics and Technology Publisher : ISBN 13 : Total Pages :185 pages Book Rating :4.:/5 (634 download)
Book Synopsis Papers Presented at the Workshop on Molecular Beam Epitaxy - Growth Physics and Technology by : Workshop on Molecular Beam Epitaxy - Growth Physics and Technology
Download or read book Papers Presented at the Workshop on Molecular Beam Epitaxy - Growth Physics and Technology written by Workshop on Molecular Beam Epitaxy - Growth Physics and Technology and published by . This book was released on 1997 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt:
