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Influence Of Impurities As Surfactants On The Growth Of Gallium Nitride Thin Film By Metal Organic Vapor Phase Epitaxy
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Book Synopsis Influence of Impurities as Surfactants on the Growth of Gallium Nitride Thin Film by Metal Organic Vapor Phase Epitaxy by : Ling Zhang
Download or read book Influence of Impurities as Surfactants on the Growth of Gallium Nitride Thin Film by Metal Organic Vapor Phase Epitaxy written by Ling Zhang and published by . This book was released on 2002 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Book Synopsis Metalorganic Vapor Phase Epitaxy of III-V Heteroepitaxial Systems by : Anish Arun Khandekar
Download or read book Metalorganic Vapor Phase Epitaxy of III-V Heteroepitaxial Systems written by Anish Arun Khandekar and published by . This book was released on 2006 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique by : David J. Miller
Download or read book Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique written by David J. Miller and published by Stanford University. This book was released on 2011 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic amplifiers and circuits; however there has been no bulk method for the production of GaN substrates for device layer growth. Instead, thick GaN layers are heteroepitaxially deposited onto non-native substrates (usually sapphire) by one of two vapor phase epitaxy (VPE) techniques: MOVPE (metalorganic VPE) or HVPE (hydride VPE). Each method has its strengths and weaknesses: MOVPE has precise growth rate and layer thickness control but it is slow and expensive; HVPE is a low-cost method for high rate deposition of thick GaN, but it lacks the precise control and heterojunction layer growth required for device structures. Because of the large (14%) lattice mismatch, GaN grown on sapphire requires the prior deposition of a low temperature MOVPE nucleation layer using a second growth process in a separate deposition system. Here we present a novel hybrid VPE system incorporating elements of both techniques, allowing MOVPE and HVPE in a single growth run. In this way, a thick GaN layer can be produced directly on sapphire. GaN growth commences as small (50-100 nm diameter) coherent strained 3-dimensional islands which coalesce into a continuous film, after which 2-dimensional layer growth commences. The coalescence of islands imparts significant stress into the growing film, which increases with the film thickness until catastrophic breakage occurs, in-situ. Additionally, the mismatch in thermal expansion rates induces compressive stress upon cooling from the growth temperature of 1025°C. We demonstrate a growth technique that mitigates these stresses, by using a 2-step growth sequence: an initial high growth rate step resulting in a pitted but relaxed film, followed by a low growth rate smoothing layer. As a result, thick (> 50 [Mu]m) and freestanding films have been grown successfully. X-ray rocking curve linewidth of 105 arcseconds and 10K PL indicating no "yellow" emission indicate that the material quality is higher than that produced by conventional MOVPE. By further modifying the hybrid system to include a metallic Mn source, it is possible to grow a doped semi-insulating GaN template for use in high frequency electronics devices.
Book Synopsis Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride by : Patrick Hofmann
Download or read book Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride written by Patrick Hofmann and published by BoD – Books on Demand. This book was released on 2018-08-15 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on intentionally introduced extrinsic point defects used for doping purposes, i.e. to achieve p-type, n-type or semi-insulating behaviour. Different dopants will be reviewed before the diffusion of point defects in a solid will be discussed. The in-situ introduction of iron, manganese, and carbon during crystal growth is employed in chapter 4 to compensate the unintentional doping (UID) of the GaN crystals, and therefore to achieve truly semi-insulating behaviour of the HVPE GaN. However the focus of this chapter lies on the characterisation of the pyroelectric coefficient (p), as semi-insulating properties are a necessary requirement for the applied Sharp-Garn measurement method. The creation of tensile stress due to in-situ silicon doping during GaN crystal growth is the topic of the 5th chapter. The tensile stress generation effect will be reproduced and the strain inside the crystal will be monitored ex-situ employing Raman spectroscopy. The n-type doping is achieved by using a vapour phase doping line and a process is developed to hinder the tensile strain generation effect. The 6th chapter concentrates on the delivery of the doping precursor via a solid state doping line, a newly developed doping method. Similar to chapter 5, the doping line is characterised carefully before the germanium doping is employed to the GaN growth. The focus lies on the homogeneity of the germanium doping and it is compared compared to the silicon doping and the vapour phase doping line. Benefits and drawbacks are discussed in conjunction with the obtained results. The germanium doping via solid state doping line is applied to the HVPE GaN growth process to measure accurately growth process related properties unique to the applied set of GaN growth parameters.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2002 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A First-principles Study of Surfactants on GaN Surfaces by : Jacobus D. Schieke
Download or read book A First-principles Study of Surfactants on GaN Surfaces written by Jacobus D. Schieke and published by . This book was released on 2002 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal-organic Chemical Vapor Epitaxy of GaN on Si(111) for Optoelectronic Applications by : Alain E. Kaloyeros
Download or read book Metal-organic Chemical Vapor Epitaxy of GaN on Si(111) for Optoelectronic Applications written by Alain E. Kaloyeros and published by . This book was released on 1998 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature growth of gallium nitride on silicon via vapor phase epitaxy was investigated. The use of different nitrogen and gallium sources was explored. The gallium nitride deposition process was optimized by varying surface preparation, seed and buffer layer growth, and annealing conditions. Films were extensively characterized via X-ray diffraction, Rutherford backscatter, atomic force microscopy, X-ray photoemission spectroscopy, and Auger electron spectroscopy. Optimized growth rates of 60-120 A/min were achieved at 0.8 torr pressure, with 1:1 gallium to nitride ratio to within 0.1%. Films were hexagonal and polycrystalline with 3 nitride bi-layer buffers, with annealing, allowed stoichiometric gallium nitride growth of up to 6000 A, but the temperatures used were not high enough to deposit epitaxial gallium nitride.
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2001 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Surface Characterization of GaN and In(x)Ga(1-x)N Thin Films by : Peter Quinn Miraglia
Download or read book Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Surface Characterization of GaN and In(x)Ga(1-x)N Thin Films written by Peter Quinn Miraglia and published by . This book was released on 2001 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Lateral Epitaxial Growth Techniques for Gallium Nitride Thin Films on 6H-silicon Carbide (0001) Substrates Via Metalorganic Vapor Phase Epitaxy by : Darren Brent Thomson
Download or read book Lateral Epitaxial Growth Techniques for Gallium Nitride Thin Films on 6H-silicon Carbide (0001) Substrates Via Metalorganic Vapor Phase Epitaxy written by Darren Brent Thomson and published by . This book was released on 2001 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Gallium Nitride and Indium Nitride Films and Nanostructured Materials by Hydride-metalorganic Vapor Phase Epitaxy by : Hyun Jong Park
Download or read book Growth of Gallium Nitride and Indium Nitride Films and Nanostructured Materials by Hydride-metalorganic Vapor Phase Epitaxy written by Hyun Jong Park and published by . This book was released on 2006 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crack-free, 3 mum GaN films were grown on GaN/AlGaN/Si template at 850°C although cracks developed when the thickness exceeded 7 mum. It was possible, however, to grow crack-free polycrystalline 40 mum thick GaN on Si using InN NRs as a buffer material.
Book Synopsis Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Characterization of GaN and In(subscript X)Ga(subscript 1-x)N Thin Films by : Andrew David Hanser
Download or read book Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Characterization of GaN and In(subscript X)Ga(subscript 1-x)N Thin Films written by Andrew David Hanser and published by . This book was released on 1998 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal-Organic Chemical Vapor Epitaxy of GaN on Si(111) for Optoelectronic Applications by : Alain E. Kaloyeros
Download or read book Metal-Organic Chemical Vapor Epitaxy of GaN on Si(111) for Optoelectronic Applications written by Alain E. Kaloyeros and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature growth of gallium nitride on silicon via vapor phase epitaxy was investigated. The use of different nitrogen and gallium sources was explored. The gallium nitride deposition process was optimized by varying surface preparation, seed and buffer layer growth, and annealing conditions. Films were extensively characterized via X-ray diffraction, Rutherford backscatter, atomic force microscopy, X-ray photoemission spectroscopy, and Auger electron spectroscopy. Optimized growth rates of 60-120 A/min were achieved at 0.8 torr pressure, with 1:1 gallium to nitride ratio to within 0.1%. Films were hexagonal and polycrystalline with 3 nitride bi-layer buffers, with annealing, allowed stoichiometric gallium nitride growth of up to 6000 A, but the temperatures used were not high enough to deposit epitaxial gallium nitride.
Book Synopsis Metal Organic Vapor Phase Epitaxy Growth Mechanisms of Gallium Antimonide and Compositional Grading in Pseudomorphic Gallium Arsenide Antimonide Films by : Brian Edmund Hawkins
Download or read book Metal Organic Vapor Phase Epitaxy Growth Mechanisms of Gallium Antimonide and Compositional Grading in Pseudomorphic Gallium Arsenide Antimonide Films written by Brian Edmund Hawkins and published by . This book was released on 2004 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Indium Nitride and Gallium Nitride on Silicon Using Metal Organic Hydride Vapor Phase Epitaxy by : Vaibhav Uday Chaudhari
Download or read book Growth of Indium Nitride and Gallium Nitride on Silicon Using Metal Organic Hydride Vapor Phase Epitaxy written by Vaibhav Uday Chaudhari and published by . This book was released on 2012 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was also found that the polycrystalline nature is as a result of polycrystalline nature of LT-GaN grown on the InN template. It was also shown that formation of completely enclosed uniformly distributed nanovoids were very essential to grow crack free thick GaN which is highly textured in 0002 orientation. It was also shown that GaN grown was very high quality crystal free of Indium. GaN growth on Indium metal deposited on Silicon was also studied. Depending on growth mode and conditions GaN 40 micron thick film and 100nm x 5000nm GaN wafers were successfully grown in same reactor.
Book Synopsis Effects of Antimony Surfactant on Indium Gallium Nitride Grown by Organometallic Vapor Phase Epitaxy by : Jason Lawrence Merrell
Download or read book Effects of Antimony Surfactant on Indium Gallium Nitride Grown by Organometallic Vapor Phase Epitaxy written by Jason Lawrence Merrell and published by . This book was released on 2012 with total page 39 pages. Available in PDF, EPUB and Kindle. Book excerpt:
