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Influence Of Carbon Sources On Thermal Stability Of C Doped Base Inp Ingaas Heterojunction Bipolar Transistors
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Book Synopsis Influence of Carbon Sources on Thermal Stability of C-doped Base InP/InGaAs Heterojunction Bipolar Transistors by :
Download or read book Influence of Carbon Sources on Thermal Stability of C-doped Base InP/InGaAs Heterojunction Bipolar Transistors written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We report effects of annealing on InP/InGaAs heterojunction bipolar transistors (HBTs) having an InGaAs base layer C-doped using CBr 4 or CBrCl 3 as the C source. It was found that ramp thermal annealing (RTA) after growth removes H atoms, which are located in C-dopedd InGaAs base layer and deactivate C acceptors, resulting in a decrease of base sheet resistance. An RTA simultaneously can deteriorate the C-doped base layer. An evaluation of base sheet resistance and dc current gain indicates that InP/InGaAs HBTs with C-doped InGaAs grown using CBrCl 3 are more stable in terms of thermal stress than those grown using CBr 4.
Book Synopsis Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications by : Russell C. Gee
Download or read book Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications written by Russell C. Gee and published by . This book was released on 1993 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of High-speed C-doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy by : Sunil Thomas
Download or read book Growth and Characterization of High-speed C-doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy written by Sunil Thomas and published by . This book was released on 1998 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2000 with total page 956 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Book Synopsis Carbon Doping and Hydrogen Passivation in Indium Gallium Arsenide and Indium Phosphide/indium Gallium Arsenide Heterojunction Bipolar Transistors Grown by Metalorganic Chemical Vapor Deposition by : Stephen Andrew Stockman
Download or read book Carbon Doping and Hydrogen Passivation in Indium Gallium Arsenide and Indium Phosphide/indium Gallium Arsenide Heterojunction Bipolar Transistors Grown by Metalorganic Chemical Vapor Deposition written by Stephen Andrew Stockman and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has made MOCVD the preferred technique for production of highly reliable GaAs-based HBT structures. In the InP/InGaAs materials system, however, inefficient C incorporation and amphoteric behavior have previously prevented the use of C as an intentional dopant, and redistribution problems associated with Zn prevent the use of MOCVD for growth of stable HBTs. This thesis describes recent work on carbon doping of GaAs, InGaAs, and InP, with emphasis placed on issues related to the use of C as the base dopant in InP/InGaAs HBTs.
Book Synopsis Japanese Journal of Applied Physics by :
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2000 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. by :
Download or read book Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor deposition system will be demonstrated. Excellent large and small area DC and RF results are obtained for single and double heterojunction structures. The large area DC current gain was increased by a factor of 3 at a given base sheet resistance via growth optimization. DHBT devices exhibit a current gain cut-off frequency of ft ~ 125 GHz and a unilateral gain cut-off frequency of fmax ~ 125 GHz.
Book Synopsis Carbon Doping and Hydrogen Passivation in InGaAs and InP/InGaAs Heterojunction Bipolar Transistors Grown by Metalorganic Chemical Vapor Deposition by : Stephen Andrew Stockman
Download or read book Carbon Doping and Hydrogen Passivation in InGaAs and InP/InGaAs Heterojunction Bipolar Transistors Grown by Metalorganic Chemical Vapor Deposition written by Stephen Andrew Stockman and published by . This book was released on 1993 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1995 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 998 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book InP HBTs written by B. Jalali and published by Artech House Materials Science. This book was released on 1995 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work provides a comprehensive overview of current InP HBT technology and its applications. Each chapter is written by a world-renowned expert on topics including crystal growth, processing, physics, modelling, and digital and analog circuits.
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Eighth International Conference on Indium Phosphide and Related Materials by :
Download or read book Eighth International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 1996 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP Based Double Heterojunction Bipolar Transistorwith Carbon Doped GaAsSb:C Base Grown by LP-MOVPE. by :
Download or read book InP Based Double Heterojunction Bipolar Transistorwith Carbon Doped GaAsSb:C Base Grown by LP-MOVPE. written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carrier gas. Carbon doped GaAsSb lattice matched on InP are of pronounced interest for high speed double heterostructure bipolar transistors (DHBTs). We observed a significant effect of the nitrogen carrier gas on the growth behaviour which results in lower distribution coefficients. A linear doping behaviour with small CBr4 flows up to p=4 x 10 19 cm-3 can be observed and first realized DHBT structures shown fT and fmax values of 100 GHz and 60GHz, respectively.
