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Indium Phosphide Cadmium Sulfide Thin Film Solar Cells
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Book Synopsis Indium Phosphide/cadmium Sulfide Thin Film Solar Cells by : Hughes Aircraft Company. Research Laboratories
Download or read book Indium Phosphide/cadmium Sulfide Thin Film Solar Cells written by Hughes Aircraft Company. Research Laboratories and published by . This book was released on 1979 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells by : K. Zanio
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells written by K. Zanio and published by . This book was released on 1980 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells by : K. Zanio
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells written by K. Zanio and published by . This book was released on 1981 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells. Quarterly Report, July-October 1980 by :
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells. Quarterly Report, July-October 1980 written by and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: InP thin films were deposited by planar reactive deposition on recrystallized CdS (RXCdS) and semi-insulating (100) InP substrates and evaluated as potential layers for an all-thin-film solar cell. One objective of this period was to grow InP on RXCdS at a substrate temperature which is high enough to permit the growth of p-type material but yet low enough to permit the epitaxial growth of large grains. Films prepared on RXCdS at approximately 330°C contained a mixture of grains having both large and submicron lateral dimensions. Be-doped epitaxial films, deposited on semi-insulating InP at 330°C, showed both n- and p-type behavior. Films prepared at higher temperatures with a freshly Be-charged indium source were p-type. However, at these temperatures, layers prepared after several runs with the same source were n-type. Analyses of the indium source and films were initiated to determine the cause of the transient doping.
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells by :
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin-film InP/CdS structures were prepared by depositing, in sequence, ITO on a low-cost glass substrate, CdS on the ITO by thermal evaporation, and InP on the CdS by planar reactive deposition (PRD). Films of CdS, 15 .mu.m thick, were recrystallized in flowing H2/H2S at 500°C. Lateral dimensions of typical grains were 50.mu.m with values up to 200 .mu.m. The sheet resistance of the recrystallized CdS (RXCdS) was lowered from greater than 105 .cap omega./O = cm2 to values as low as 16 .cap omega./O = cm2 by annealing in either H2 Cd atmospheres. Epitaxy of InP was undertaken on (100) InP at a substrate temperature of 320°C. Room-temperature electron mobilities of about 2000 cm2/V-sec were found. Mobilities and hole concentrations of 60 cm2/V-sec and 1017 cm-3, respectively, were achieved with Be-doped films. P-type films with hole concentrations as high as a few times 1018cm-3 were achieved with increased doping. Be-doped InP was deposited onto the RXCdS/ITO/GLASS substrate to form a thin-film cell. However, p-type InP could not be prepared with CdS as a substrat4e, presumably due to interdiffusion or vapor transport of sulfur. Consequently, blocking action and a photovoltage could only be achieved using a gold Schottky barrier on the InP/RXCdS/ITO/GLASS structure. Plans for the next quarter include determining whether n-type doping from the CdS occurs by either interdiffusion or vapor transport, characterizing InP epitaxy on the RXCdS, and preparing additional thin-film structures.
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells. Quarterly Technical Progress Report No. 3, December 1979-April 1980 by :
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells. Quarterly Technical Progress Report No. 3, December 1979-April 1980 written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films (approx. 1 .mu.m thick) and large grains (approx. 40 x 40 .mu.m) of InP were epitaxially deposited on low-cost recrystallized CdS (RXCdS) substrates at 280°C by planar reactive deposition. At 380°C, a 0.4- to 1.0-.mu.m-thick In-Cd-S transition layer between the InP and the RXCdS degrades the quality of the InP epitaxy. However, p-type InP films were prepared at this temperature by Be-doping and capping the entire RXCdS substrate with InP. Large grains of CdTe (approx. 40 .mu.m) were also deposited on RXCdS substrates at 460°C by physical vapor deposition. The grain size of the RXCdS is typically 40 .mu.m. However, during this period we prepared RXCdS with grains having dimensions up to 300 .mu.m.
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells. Semiannual Report, July 1980-December 1980 by :
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells. Semiannual Report, July 1980-December 1980 written by and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: InP thin films were deposited by planar reactive deposition on recyrstallized CdS (RXCdS) and semi-insulating (100) InP substrates and evaluated as potential layers for an all-thin-film solar cell. Films prepared on RXCdS at approximately 330°C contained a mixture of grains having both large and submicron lateral dimensions. SIMS analysis showed the interdiffusion profiles to be well behaved and, within the resolution of the analysis, no significant difference in the profiles between structures prepared at 330°C and 380°C. Be-doped epitaxial films, deposited on semi-insulating InP at 330°C, showed both n- and p-type behavior. Films prepared at higher and lower temperatures with a freshly Be-charged In source were p-type and n-type, respectively; the n-type behavior is associated with an excess of n-type native defects. SIMS analyses confirmed the presence of Be in all Be-doped films. Growth with deviation from stoichiometry was initiated at 330°C to reduce the concentration of native defects. Growth of Be-doped films at higher substrate temperature with the same Be-doped source after several runs eventually resulted in n-type films. Analyses of the In source and films were initiated to determine the cause of the transient doping. As an alternative to Be doping, p-type Zn-doped InP films were prepared on InP semi-insulating substrates with room-temperature carrier concentration and mobilities of 6 x 1016 cm−3, and 80 cm2/Vsec, respectively.
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Terrestrial Solar Cells by : Hughes Aircraft Company. Research Laboratories
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Terrestrial Solar Cells written by Hughes Aircraft Company. Research Laboratories and published by . This book was released on 1977 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Indium Phosphide/cadmium Sulfide Thin Film Solar Cells by : Hughes Aircraft Company. Research Laboratories
Download or read book Indium Phosphide/cadmium Sulfide Thin Film Solar Cells written by Hughes Aircraft Company. Research Laboratories and published by . This book was released on 1979 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells by : K. Zanio
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells written by K. Zanio and published by . This book was released on 1981 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Terrestrial Solar Cells by : Hughes Aircraft Company. Research Laboratories
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Terrestrial Solar Cells written by Hughes Aircraft Company. Research Laboratories and published by . This book was released on 1977 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells. Final Report, May 1979 Through July 1980 by :
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells. Final Report, May 1979 Through July 1980 written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin-film InP/RXCdS/ITO/GLASS devices were prepared by depositing ITO on low-cost glass substrate, depositing CdS on the ITO by thermal evaporation, increasing the CdS lateral grain size by recrystallization, and depositing p-type InP by planar reactive deposition (PRD) on the recrystallized CdS (RXCdS). Yields of the RXCdS/ITO/GLASS substrates were increased to 90% with lateral dimensions of the RXCdS grains as large as 0.3 mm. P-type InP layers were obtained with Be doping. S-doping via vapor transport from the CdS was eliminated by capping the entire RXCdS substrate with InP. For InP deposited on RXCdS at 380°C, devices showed blocking action with a barrier height of about 0.5 V but no light response, possibly due to an intermediate approx. 3-.mu.m-thick n-InP layer from diffusion of S from the RXCdS. These results were achieved despite poor InP epitaxy due to an approx. 0.5-.mu.m-thick In-Cd-S transition layer between the InP and the RXCdS. InP films were subsequently deposited on RXCdS at the reduced substrate temperature of 280°C to reduce S-diffusion and improve the quality of the epitaxy. Complete InP epitaxy on RXCdS was achieved with the lateral dimensions of the InP (approx. = 40 .mu.m) replicating that of the RXCdS. Given the increase in the concentration of n-type native defects as substrate temperature is decreased, the present lower limit for obtaining p-type InP by vacuum technologies appears to be about 300°C. A 300 to 350°C range of substrate temperature appears to befeasible for preparing large-grained p-type InP for both frontwall and backwall cell. However, if the thickness of the n-type layer due to S diffusion cannot be kept to less than a few thousand Angstroms, then development must be restricted to the frontwall cells.
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Terrestrial Solar Cells. Quarterly Report No. 4, July 1--September 14, 1977 by :
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Terrestrial Solar Cells. Quarterly Report No. 4, July 1--September 14, 1977 written by and published by . This book was released on 1977 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Indium phosphide/cadmium sulfide solar cells with AM2 efficiencies up to 7% were prepared by the deposition of CdS on single crystals of InP. When an intermediate layer of n-type InP was deposited by the planar reactive deposition (PRD) technique, 3% efficiencies were obtained. Reduced efficiencies were obtained when an intermediate layer of p-type Mn-doped InP was used as the light-absorbing layer. Manganese, acting as a deep center at 0.25 eV and introduced in concentrations of about 10/sup 18/ cm/sup -3/, may act as recombination and tunneling centers, thus limiting the efficiency of the cells. These results suggest that, to improve cell efficiency, either the Mn doping must be reduced or the purity of films must be improved. Methods of improving the purity of the films are suggested. Incorporating Zn as a dopant in the form of diethylzinc is proposed to provide a shallow center to replace Mn. An evaluation of thin films of InP prepared by PRD onto thin films of CdS and InP and sapphire substrates indicated that the InP grain boundaries are n-type, which results in intolerable high current paths through all-thin-film polycrystalline cells. Incorporating Zn as a dopant by diethylzinc is also proposed to provide a graded p to p/sup +/ structure, which would block the current at the grain boundaries. A recently implemented chemomechanical polishing technique has yielded smooth surfaces and complete coverage over single crystals of CdS.
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells. Quarterly Technical Progress Report No. 1, June 1979-August 1979 by :
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells. Quarterly Technical Progress Report No. 1, June 1979-August 1979 written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Cadmium sulfide and InP thin films were prepared by thermal evaporation and planar reactive deposition, respectively. Polycrystalline CdS films up to 10 .mu.m thick showed absorption losses of less than 10% over the 0.6- to 1.0-.mu.m wavelength range. A threefold increase in lateral grain size was achieved when CdS/ITO/GLASS structures were partially recrystallized in flowing H2S/Ar at 550°C. InP deposited onto (100) InP semiinsulating substrate at substrate temperatures as low as 260°C was n-type with room-temperature mobilities as high as 1500 cm2/Vsec. The CdS and InP films were integrated into an all-thin-film InP/CdS/ITO/GLASS structure.
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells by : K. Zanio
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells written by K. Zanio and published by . This book was released on 1981 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Indium Phosphide/cadmium Sulfide Thin-film Solar Cells by :
Download or read book Indium Phosphide/cadmium Sulfide Thin-film Solar Cells written by and published by . This book was released on 1980 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Indium Phosphide/Cadmium Sulfide Thin-Film Solar Cells; Final Report for Period May 1979 - July 1980 by :
Download or read book Indium Phosphide/Cadmium Sulfide Thin-Film Solar Cells; Final Report for Period May 1979 - July 1980 written by and published by . This book was released on 1980 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
