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Impurity Doping Processes In Silicon
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Book Synopsis Impurity Doping Processes in Silicon by : F.F.Y. Wang
Download or read book Impurity Doping Processes in Silicon written by F.F.Y. Wang and published by Elsevier. This book was released on 2012-12-02 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
Book Synopsis Metal Impurities in Silicon-Device Fabrication by : Klaus Graff
Download or read book Metal Impurities in Silicon-Device Fabrication written by Klaus Graff and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.
Book Synopsis Electronic Materials by : L.S. Miller
Download or read book Electronic Materials written by L.S. Miller and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electronic materials are a dominant factor in many areas of modern technology. The need to understand'them is paramount; this book addresses that need. The main aim of this volume is to provide a broad unified view of electronic materials, including key aspects of their science and technology and also, in many cases, their commercial implications. It was considered important that much of the contents of such an overview should be intelligible by a broad audience of graduates and industrial scientists, and relevant to advanced undergraduate studies. It should also be up to date and even looking forward to the future. Although more extensive, and written specifically as a text, the resulting book has much in common with a short course of the same name given at Coventry Polytechnic. The interpretation of the term "electronic materials" used in this volume is a very broad one, in line with the initial aim. The principal restriction is that, with one or two minor exceptions relating to aspects of device processing, for example, the materials dealt with are all active materials. Materials such as simple insulators or simple conductors, playing only a passive role, are not singled out for consider ation. Active materials might be defined as those involved in the processing of signals in a way that depends crucially on some specific property of those materials, and the immediate question then concerns the types of signals that might be considered.
Book Synopsis Silicon-Molecular Beam Epitaxy by : E. Kasper
Download or read book Silicon-Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Book Synopsis 3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2015) by : Ahmet Yavuz Oral
Download or read book 3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2015) written by Ahmet Yavuz Oral and published by Springer. This book was released on 2016-10-17 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2015) was held from 19–23 October 2015. This congress focused on the latest developments of sustainable energy technologies, materials for sustainable energy applications and environmental and economic perspectives of energy. These proceedings included 40 peer-reviewed technical papers, submitted by leading academic and research institutions from over 23 countries and represented some of the most cutting-edge researches available. The sections included in the 40 papers are listed as follows: Solar Energy, Fuel cells, Hydrogen productions, Hydrogen storage, Energy storage, Energy saving, Biofuels and Bioenergy, Wind Energy, Nuclear Energy, Fossil Energy, Hydropower, Carbon capture and storage, Materials for renewable energy storage and conversion, Photovoltaics and solar cells, Fuel generation from renewables (catalysis), Carbon dioxide sequestration and conversion, Materials for energy saving, Thermoelectrics, Energy saving in buildings, Bio-Assessment and Toxicology, Air pollution from mobile and stationary sources, Transport of Air Pollutants, Environment-Friendly Construction and Development, Energy Management Systems.
Book Synopsis Handbook of Semiconductor Manufacturing Technology by : Yoshio Nishi
Download or read book Handbook of Semiconductor Manufacturing Technology written by Yoshio Nishi and published by CRC Press. This book was released on 2017-12-19 with total page 1720 pages. Available in PDF, EPUB and Kindle. Book excerpt: Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Book Synopsis Introduction to Microelectronics to Nanoelectronics by : Manoj Kumar Majumder
Download or read book Introduction to Microelectronics to Nanoelectronics written by Manoj Kumar Majumder and published by CRC Press. This book was released on 2020-11-25 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.
Book Synopsis Diffusion in Solids and Liquids, DSL-2006 I by : Andreas Öchsner
Download or read book Diffusion in Solids and Liquids, DSL-2006 I written by Andreas Öchsner and published by Trans Tech Publications Ltd. This book was released on 2006-10-15 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mass Diffusion 2nd International Conference on Diffusion in Solids and Liquids, Mass Transfer - Heat Transfer - Microstructure & Properties, DSL-2006, 26-28 July 2006, University of Aveiro, Portugal
Book Synopsis Analysis and Simulation of Semiconductor Devices by : S. Selberherr
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Book Synopsis Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals by : Oleg Velichko
Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Book Synopsis Mosfet Modeling For Vlsi Simulation: Theory And Practice by : Narain Arora
Download or read book Mosfet Modeling For Vlsi Simulation: Theory And Practice written by Narain Arora and published by World Scientific. This book was released on 2007-02-14 with total page 633 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Book Synopsis MOSFET Models for VLSI Circuit Simulation by : Narain D. Arora
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Book Synopsis Physical Chemistry of Semiconductor Materials and Processes by :
Download or read book Physical Chemistry of Semiconductor Materials and Processes written by and published by John Wiley & Sons. This book was released on 2015-08-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
Book Synopsis The World of Materials by : Robert A. Wesolowski
Download or read book The World of Materials written by Robert A. Wesolowski and published by Springer Nature. This book was released on 2020-06-08 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: The world of materials is exciting because new materials are evolving daily. After an introduction to materials science, the book addresses the classification and structure of matter. It moves on to discuss crystal and mechanical properties. Next, the book employs various materials such as semiconductors and iron wires to teach concepts such as electrical conductivity, heat conductivity and allotropes. Corrosion is addressed and a chapter dedicated to interpretation of graphs and diagrams in materials science is presented. The book then progresses with chapters on ceramics, biomaterials, polymers and composites. To address the growing importance of recycling materials, polymer identification codes are explained. Interesting topics such as accidental materials discovery and materials failure are included. Each chapter ends with a chapter summary and questions and answers. Illustrations and worked examples are provided throughout. A lab manual is included as well. Presents an broad overview of materials science topics, including such topics as: crystal and mechanical properties of materials, semiconductors and iron wires, corrosion, ceramics, biomaterials, polymers, and composite materials; Examines modern-day materials, their synthesis, properties, alteration, and applications; Includes supplemental material, such as a lab manual and examples.
Book Synopsis Fundamentals of Medium/Heavy Duty Commercial Vehicle Systems by : Gus Wright
Download or read book Fundamentals of Medium/Heavy Duty Commercial Vehicle Systems written by Gus Wright and published by Jones & Bartlett Learning. This book was released on 2019-07 with total page 1929 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Thoroughly updated and expanded, 'Fundamentals of Medium/Heavy Duty Commercial Vehicle Systems, Second Edition' offers comprehensive coverage of basic concepts building up to advanced instruction on the latest technology, including distributed electronic control systems, energy-saving technologies, and automated driver-assistance systems. Now organized by outcome-based objectives to improve instructional clarity and adaptability and presented in a more readable format, all content seamlessly aligns with the latest ASE Medium-Heavy Truck Program requirements for MTST." --Back cover.
Book Synopsis Integrated Circuit Fabrication by : Shubham Kumar
Download or read book Integrated Circuit Fabrication written by Shubham Kumar and published by CRC Press. This book was released on 2021-04-28 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers theoretical and practical aspects of all major steps in the fabrication sequence. This book can be used conveniently in a semester length course on integrated circuit fabrication. This text can also serve as a reference for practicing engineer and scientist in the semiconductor industry. IC Fabrication are ever demanding of technology in rapidly growing industry growth opportunities are numerous. A recent survey shows that integrated circuit currently outnumber humans in UK, USA, India and China. The spectacular advances in the development and application of integrated circuit technology have led to the emergence of microelectronic process engineering as an independent discipline. Integrated circuit fabrication text books typically divide the fabrication sequence into a number of unit processes that are repeated to form the integrated circuit. The effect is to give the book an analysis flavor: a number of loosely related topics each with its own background material. Note: T& F does not sell or distribute the Hardback in India, Pakistan, Nepal, Bhutan, Bangladesh and Sri Lanka.
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
