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Implementation Of A Test System For An Ingap Gaas Heterojunction Bipolar Transistor Reliability Study
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Book Synopsis Implementation of a Test System for an InGaP/GaAs Heterojunction Bipolar Transistor Reliability Study by : Michael Scott Griswold
Download or read book Implementation of a Test System for an InGaP/GaAs Heterojunction Bipolar Transistor Reliability Study written by Michael Scott Griswold and published by . This book was released on 1999 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Reliability Study of InGaP/GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization, Modeling and Simulation by : Xiang Liu
Download or read book Reliability Study of InGaP/GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization, Modeling and Simulation written by Xiang Liu and published by . This book was released on 2011 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.
Book Synopsis Analysis of Bias-dependent Collector Delay in InGaP/GaAs Heterojunction Bipolar Transistors by : Michael Leonard Hattendorf
Download or read book Analysis of Bias-dependent Collector Delay in InGaP/GaAs Heterojunction Bipolar Transistors written by Michael Leonard Hattendorf and published by . This book was released on 2000 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Modeling of InGaP/GaAs Heterojunction Bipolar Transistor by : Sung-Jin Ho
Download or read book Fabrication and Modeling of InGaP/GaAs Heterojunction Bipolar Transistor written by Sung-Jin Ho and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study and Realization of InGaP, GaAs "collector Up" Double Heterojunction Bipolar Transistors for High Performance RF Applications by : Achim Henkel
Download or read book Study and Realization of InGaP, GaAs "collector Up" Double Heterojunction Bipolar Transistors for High Performance RF Applications written by Achim Henkel and published by . This book was released on 1998 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Study of InGaP/GaAs/InGaP Composite Collector Double Heterojunction Bipolar Transistor and GaAs Delta-doped Emitter Bipolar Junction Transistor by : Kim Luong Lew
Download or read book A Study of InGaP/GaAs/InGaP Composite Collector Double Heterojunction Bipolar Transistor and GaAs Delta-doped Emitter Bipolar Junction Transistor written by Kim Luong Lew and published by . This book was released on 2004 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Experimental and Theoretical Study of InGaP-GaAs Double Heterojunction Bipolar Transistors by : Tae-Woo Lee
Download or read book An Experimental and Theoretical Study of InGaP-GaAs Double Heterojunction Bipolar Transistors written by Tae-Woo Lee and published by . This book was released on 1992 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InGaP/GaAs Quantum Well Heterojunction Bipolar Transistor for Thermal Sensor Application by : 曾柏諺
Download or read book InGaP/GaAs Quantum Well Heterojunction Bipolar Transistor for Thermal Sensor Application written by 曾柏諺 and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication, Characterization and Modeling of NPN InGaP/GaAs Heterojunction Bipolar Transistors by : Ying Wu
Download or read book Fabrication, Characterization and Modeling of NPN InGaP/GaAs Heterojunction Bipolar Transistors written by Ying Wu and published by . This book was released on 1996 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InGaP/GaAs Heterojunction Bipolar Transistors and Phototransistors by : Jowan Masum
Download or read book InGaP/GaAs Heterojunction Bipolar Transistors and Phototransistors written by Jowan Masum and published by . This book was released on 1997 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The ESD Handbook by : Steven H. Voldman
Download or read book The ESD Handbook written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2021-03-02 with total page 1168 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.
Book Synopsis Reliability Concerns for GaAs-Based HBTs in DoD Space Systems by :
Download or read book Reliability Concerns for GaAs-Based HBTs in DoD Space Systems written by and published by . This book was released on 2003 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium-arsenide-based heterojunction bipolar transistor (HBT) circuits are known to be sensitive to current gain degradation associated with aspects of the semiconductor manufacturing process. This letter discusses the susceptibility of GaAs-based HBT circuits to a life-limiting failure mechanism and the impact of this failure mode on the use of these circuits in space system applications.
Book Synopsis Design, Fabrication, Characterization and Simulation of High Performance Npn InGaP/GaAs Heterojunction Bipolar Phototransistors and Heterojunction Bipolar Transistors by : Ravi Sridhara
Download or read book Design, Fabrication, Characterization and Simulation of High Performance Npn InGaP/GaAs Heterojunction Bipolar Phototransistors and Heterojunction Bipolar Transistors written by Ravi Sridhara and published by . This book was released on 1997 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Large-signal Model of InGaP/GaAs Heterojunction Bipolar Transistor and Design of Low-phase-noise Voltage-controlled Oscillators by : Tarun Juneja
Download or read book Large-signal Model of InGaP/GaAs Heterojunction Bipolar Transistor and Design of Low-phase-noise Voltage-controlled Oscillators written by Tarun Juneja and published by . This book was released on 2000 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Design of High-performance InGaP/GaAs Heterojunction Bipolar Transistors Grown by Low-pressure Metalorganic Chemical Vapor Deposition by : Quesnell Jacob Hartmann
Download or read book Growth and Design of High-performance InGaP/GaAs Heterojunction Bipolar Transistors Grown by Low-pressure Metalorganic Chemical Vapor Deposition written by Quesnell Jacob Hartmann and published by . This book was released on 1998 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaInP/GaAs Heterojunction Bipolar Transistor, Empirical Investigation at 29 GHz by :
Download or read book GaInP/GaAs Heterojunction Bipolar Transistor, Empirical Investigation at 29 GHz written by and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: