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Hydrogen Related Defects In Proton Implanted Silicon And Germanium
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Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger
Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Book Synopsis Defects in Microelectronic Materials and Devices by : Daniel M. Fleetwood
Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Book Synopsis Defects in Semiconductors Icds-18 by : M. Suezawa
Download or read book Defects in Semiconductors Icds-18 written by M. Suezawa and published by Trans Tech Publications. This book was released on 1996 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Book Synopsis Science and Technology of Defects in Silicon by : C.A.J. Ammerlaan
Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Book Synopsis Hydrogen in Crystalline Semiconductors by : Stephen J. Pearton
Download or read book Hydrogen in Crystalline Semiconductors written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: vgl. Hardcoverausgabe.
Book Synopsis Dopants and Defects in Semiconductors by : Matthew D. McCluskey
Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2012-02-23 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.
Book Synopsis Dopants and Defects in Semiconductors, Second Edition by : Matthew D. McCluskey
Download or read book Dopants and Defects in Semiconductors, Second Edition written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018-02-19 with total page 475 pages. Available in PDF, EPUB and Kindle. Book excerpt: Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Book Synopsis Optical Absorption of Impurities and Defects in Semiconducting Crystals by : Bernard Pajot
Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2012-08-28 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Book Synopsis C, H, N and O in Si and Characterization and Simulation of Materials and Processes by : A. Borghesi
Download or read book C, H, N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Book Synopsis Germanium-Based Technologies by : Cor Claeys
Download or read book Germanium-Based Technologies written by Cor Claeys and published by Elsevier. This book was released on 2011-07-28 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. - State-of-the-art information available for the first time as an all-in-source - Extensive reference list making it an indispensable reference book - Broad coverage from fundamental aspects up to industrial applications
Book Synopsis Identification of Defects in Semiconductors by :
Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-10-27 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.
Book Synopsis Radiation Defect Engineering by : Vitali? Vasil?evich Kozlovski?
Download or read book Radiation Defect Engineering written by Vitali? Vasil?evich Kozlovski? and published by World Scientific. This book was released on 2005 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1985 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect Interaction and Clustering in Semiconductors by : Sergio Pizzini
Download or read book Defect Interaction and Clustering in Semiconductors written by Sergio Pizzini and published by Scitec Publications. This book was released on 2002 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may - if not carefully controlled- induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.
Book Synopsis Defect and Diffusion Forum Vol. 62-63 by : Graeme E. Murch
Download or read book Defect and Diffusion Forum Vol. 62-63 written by Graeme E. Murch and published by Trans Tech Publications Ltd. This book was released on 1989-01-01 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect and Diffusion Forum Vol. 62-63
Book Synopsis The impact of uniaxial deformation and irradiation on the electrical properties of single crystals n-Ge by : S. Luniov
Download or read book The impact of uniaxial deformation and irradiation on the electrical properties of single crystals n-Ge written by S. Luniov and published by Litres. This book was released on 2022-01-29 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: The monograph is devoted to the study of the impact of the extreme deformation and radiation fields on the electrical properties of single crystals n-Ge.In the first chapter of the monograph the review of the major types of radiation defects in single crystals of germanium have provided. The theoretical models of their microstructure are also presented. In the second chapter the theory of the conductivity and Hall effect for anisotropic semiconductors, which include the germanium, have presented. In the third chapter of the monograph the results of research by the authors of the tensoeffects and galvanomagnetic phenomena at the strong uniaxial pressure and high-energy electron irradiation are presented.The monograph for a wide range of the specialists with the physics of semiconductors and radiation physics of solids is designed. It will be useful also for the graduate students and students of physical and physical-technical specialties.
