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Author : T. B. Ramachandran
Publisher :
ISBN 13 :
Total Pages : 130 pages
Book Rating : 4.:/5 (86 download)
Download or read book High Injection Theory of Junction Transistors written by T. B. Ramachandran and published by . This book was released on 1961 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dooie Cherkot Thomas
Publisher :
ISBN 13 :
Total Pages : 218 pages
Book Rating : 4.:/5 (89 download)
Download or read book The Calculation of the Current-gain of Bipolar Transistors and the Theory for the Forward-biased P-n Junction at All Injection Levels written by Dooie Cherkot Thomas and published by . This book was released on 1980 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert Audley Manhart
Publisher :
ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.F/5 ( download)
Download or read book High Level Injection Effects in Transistors written by Robert Audley Manhart and published by . This book was released on 1960 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : E. J. M. Kendall
Publisher : Elsevier
ISBN 13 : 148327876X
Total Pages : 341 pages
Book Rating : 4.4/5 (832 download)
Download or read book Transistors written by E. J. M. Kendall and published by Elsevier. This book was released on 2013-10-22 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistors covers the main thread of transistor development. This book is organized into 2 parts encompassing 19, and starts with an overview of the semi-conductor physics pertinent to the understanding of transistors, as well as features and applications of the point contact devices and junction devices. The subsequent part deals with the modulation of conductance of thin films of conductors by surface charges, the metal-semi conductor, and the semi-conductor triode. These topics are followed by discussions on the nature of the forward current, physical principles in transistor, the hole injection in transistor, and the double-surface transistor in which the emitter and collector contacts bear on the two opposite faces of a thin wedge or slab of semiconductor. Other papers describe the effects of electrical forming on the rectifying barrier, the junction in semiconductors and transistors, the theory of Alpha for diffused junction transistors, and a high frequency diffused transistor. The last chapters consider unipolar, analog, and thin film transistors This book will be of value to physicists and researchers in the allied fields.
Author : Stanford University Stanford Electronics Laboratories
Publisher :
ISBN 13 :
Total Pages : 144 pages
Book Rating : 4.F/5 ( download)
Download or read book High-level Injection Effects in Transistors written by Stanford University Stanford Electronics Laboratories and published by . This book was released on 1960 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John D. Cressler
Publisher : Artech House
ISBN 13 : 9781580535991
Total Pages : 592 pages
Book Rating : 4.5/5 (359 download)
Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Author : Robert David Middlebrook
Publisher :
ISBN 13 :
Total Pages : 336 pages
Book Rating : 4.3/5 (91 download)
Download or read book An Introduction to Junction Transistor Theory written by Robert David Middlebrook and published by . This book was released on 1957 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistor, Thyristor, MOS, FET.
Author : Michael Schrter
Publisher : World Scientific
ISBN 13 : 981427321X
Total Pages : 753 pages
Book Rating : 4.8/5 (142 download)
Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schrter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Author : Stanford University. Electronics Research Laboratory
Publisher :
ISBN 13 :
Total Pages : 152 pages
Book Rating : 4.F/5 ( download)
Download or read book On the Theory of Junction Transistors written by Stanford University. Electronics Research Laboratory and published by . This book was released on 1954 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John. J. Sparkes
Publisher : Elsevier
ISBN 13 : 1483149072
Total Pages : 261 pages
Book Rating : 4.4/5 (831 download)
Download or read book Junction Transistors written by John. J. Sparkes and published by Elsevier. This book was released on 2016-05-13 with total page 261 pages. Available in PDF, EPUB and Kindle. Book excerpt: Junction Transistors explains the operation and characterization of junction transistors to a point from which detailed circuit analysis and design can be undertaken. This book highlights three features. First, this text analyzes the behavior of semiconductors, pn junctions, and all types of bipolar transistors from the standpoint of classical physics. The validity of this approach and the link with quantum physics is discussed in an appendix. Second, the high-speed operation of transistors is analyzed and explained in terms of base charge. Finally, the analysis of transistor behavior in terms of the movements of holes and electrons can only be carried out explicitly with the aid of simplifying assumptions, not all of which can be fully justified. In this selection, an attempt has been made to justify these assumptions wherever possible, to show where they break down, and to remove the assumptions altogether in one or two instances and obtain more rigorous solutions. This publication provides material of interest not only to undergraduates but also to those more familiar with the properties and use of transistors.
Author : Simon M. Sze
Publisher : John Wiley & Sons
ISBN 13 : 1119429137
Total Pages : 944 pages
Book Rating : 4.1/5 (194 download)
Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Author : Alvin B. Phillips
Publisher :
ISBN 13 :
Total Pages : 408 pages
Book Rating : 4.0/5 ( download)
Download or read book Transistor Engineering written by Alvin B. Phillips and published by . This book was released on 1981 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1020 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1988 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mitra Dutta
Publisher : World Scientific
ISBN 13 : 9789810242572
Total Pages : 458 pages
Book Rating : 4.2/5 (425 download)
Download or read book Advances in Semiconductor Lasers and Applications to Optoelectronics written by Mitra Dutta and published by World Scientific. This book was released on 2000 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: Foreword by Charles H Townes This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modeling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the exciting new capability of scattering time engineering in novel semiconductor lasers.As a result of continuing advances in techniques for growing quantum heterostructures, recent developments are likely to be followed in coming years by many more advances in semiconductor lasers and optoelectronics. As our understanding of these devices and the ability to fabricate them grow, so does our need for more sophisticated theories and simulation methods bridging the gap between quantum and classical transport.
Author : Michael Schroter
Publisher : World Scientific
ISBN 13 : 9814468193
Total Pages : 753 pages
Book Rating : 4.8/5 (144 download)
Download or read book Compact Hierarchical Bipolar Transistor Modeling With Hicum written by Michael Schroter and published by World Scientific. This book was released on 2010-11-25 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Author : Wai Kai Chen
Publisher : Elsevier
ISBN 13 : 0080477488
Total Pages : 1227 pages
Book Rating : 4.0/5 (84 download)
Download or read book The Electrical Engineering Handbook written by Wai Kai Chen and published by Elsevier. This book was released on 2004-11-16 with total page 1227 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Electrical Engineer's Handbook is an invaluable reference source for all practicing electrical engineers and students. Encompassing 79 chapters, this book is intended to enlighten and refresh knowledge of the practicing engineer or to help educate engineering students. This text will most likely be the engineer’s first choice in looking for a solution; extensive, complete references to other sources are provided throughout. No other book has the breadth and depth of coverage available here. This is a must-have for all practitioners and students! The Electrical Engineer's Handbook provides the most up-to-date information in: Circuits and Networks, Electric Power Systems, Electronics, Computer-Aided Design and Optimization, VLSI Systems, Signal Processing, Digital Systems and Computer Engineering, Digital Communication and Communication Networks, Electromagnetics and Control and Systems. About the Editor-in-Chief... Wai-Kai Chen is Professor and Head Emeritus of the Department of Electrical Engineering and Computer Science at the University of Illinois at Chicago. He has extensive experience in education and industry and is very active professionally in the fields of circuits and systems. He was Editor-in-Chief of the IEEE Transactions on Circuits and Systems, Series I and II, President of the IEEE Circuits and Systems Society and is the Founding Editor and Editor-in-Chief of the Journal of Circuits, Systems and Computers. He is the recipient of the Golden Jubilee Medal, the Education Award, and the Meritorious Service Award from the IEEE Circuits and Systems Society, and the Third Millennium Medal from the IEEE. Professor Chen is a fellow of the IEEE and the American Association for the Advancement of Science. * 77 chapters encompass the entire field of electrical engineering. * THOUSANDS of valuable figures, tables, formulas, and definitions. * Extensive bibliographic references.
Author : Michael Reisch
Publisher : Springer Science & Business Media
ISBN 13 : 364255900X
Total Pages : 671 pages
Book Rating : 4.6/5 (425 download)
Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
