High Aspect Ratio Gan Fin Microstructures With Nonpolar Sidewalls By Continuous Mode Metalorganic Vapor Phase Epitaxy

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High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy

Author : Jana Hartmann
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (117 download)

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Book Synopsis High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy by : Jana Hartmann

Download or read book High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy written by Jana Hartmann and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-dimensional GaN micro- and nanorods with high aspect ratio have recently gained substantial interest in LED research, due to their reduced defect density, their non-polar sidewalls and their increased active area. Here, we present an alternative geometry for high aspect ratio 3D nanostructures: vertically standing GaN “walls”, so called GaN fins. With high aspect ratios, these GaN fins exhibit the same interesting characteristics as their rod counterparts mentioned above. Beyond that, due to their geometry, the respective material analysis and device processing can be expected to be less complex. We are able to demonstrate the highly reproducible selective area growth of these fins by continuous mode MOVPE. Fin heights of more than 50 μm (aspect ratios of nearly 14) could be achieved and growth rates are as high as 22.8 μm/h in the beginning of the growth. The sidewalls are smooth non-polar 11-20 a-planes, suitable for optoelectronic devices due to the missing quantum-confined Stark effect and less edge effects compared to rods. We investigate the influence of pattern orientation and geometry on the fin morphology. Moreover, the influence of silane flow, which is known to enhance the vertical growth rate, and other growth parameters are systematically explored.

Light-Emitting Diodes

Author : Jinmin Li
Publisher : Springer
ISBN 13 : 3319992112
Total Pages : 601 pages
Book Rating : 4.3/5 (199 download)

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Book Synopsis Light-Emitting Diodes by : Jinmin Li

Download or read book Light-Emitting Diodes written by Jinmin Li and published by Springer. This book was released on 2019-01-07 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive in scope, this book covers the latest progresses of theories, technologies and applications of LEDs based on III-V semiconductor materials, such as basic material physics, key device issues (homoepitaxy and heteroepitaxy of the materials on different substrates, quantum efficiency and novel structures, and more), packaging, and system integration. The authors describe the latest developments of LEDs with spectra coverage from ultra-violet (UV) to the entire visible light wavelength. The major aspects of LEDs, such as material growth, chip structure, packaging, and reliability are covered, as well as emerging and novel applications beyond the general and conventional lightings. This book, written by leading authorities in the field, is indispensable reading for researchers and students working with semiconductors, optoelectronics, and optics. Addresses novel LED applications such as LEDs for healthcare and wellbeing, horticulture, and animal breeding; Editor and chapter authors are global leading experts from the scientific and industry communities, and their latest research findings and achievements are included; Foreword by Hiroshi Amano, one of the 2014 winners of the Nobel Prize in Physics for his work on light-emitting diodes.

3D GaN Fins as a Versatile Platform for A-Plane-Based Devices

Author : Jana Hartmann
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (117 download)

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Book Synopsis 3D GaN Fins as a Versatile Platform for A-Plane-Based Devices by : Jana Hartmann

Download or read book 3D GaN Fins as a Versatile Platform for A-Plane-Based Devices written by Jana Hartmann and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN fins on GaN-on-sapphire templates are fabricated by continuous mode selective area metalorganic vapor phase epitaxy. The fins exhibit high aspect ratios and smooth nonpolar a-plane sidewalls with an ultra-low threading dislocation density of a few 105 cm^-2 making them ideally suited for optoelectronic to electronic applications. A detailed analysis of the inner structure of GaN fins is provided by the help of marker layer experiments and correlation of results from fins fabricated under different growth conditions, leading to the development of a growth model to explain the final geometry and optical as well as electrical properties of these high aspect ratio fins. Distinctly different material properties for the central and outer parts of the fins are detected. Whereas the outer sidewalls represent high quality GaN surfaces with very low defect densities, a strong quenching of near band edge emission (NBE) in the central part of the fins is accompanied by heavy compensation of free electrons. A possible explanation is the incorporation of excessive point defects, like intrinsic defects or carbon impurity. The sidewall regions, however, prove to be highly suitable for device applications due to their strong NBE emission, low dislocation density and high free carrier concentration.

Study of 3D-growth Conditions for Selective Area MOVPE of High Aspect Ratio GaN Fins with Non-polar Vertical Sidewalls

Author : Jana Hartmann
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (117 download)

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Book Synopsis Study of 3D-growth Conditions for Selective Area MOVPE of High Aspect Ratio GaN Fins with Non-polar Vertical Sidewalls by : Jana Hartmann

Download or read book Study of 3D-growth Conditions for Selective Area MOVPE of High Aspect Ratio GaN Fins with Non-polar Vertical Sidewalls written by Jana Hartmann and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are used, the sidewalls are formed by non-polar {11-20} planes, making the fins particularly suitable for many device applications like LEDs, FETs, lasers, sensors or waveguides. The influence of growth parameters like temperature, pressure, V/III ratio and total precursor flow on the fin structures is analyzed. Based on these results, a 2-temperature-step-growth was developed, leading to fins with smooth side and top facets, fast vertical growth rates and good homogeneity along their length as well as over different mask patterns. For the core-shell growth of fin LED heterostructures, the 2-temperature-step-growth shows much smoother sidewalls and less crystal defects in the InGaN QW and p-GaN shell compared to structures with cores grown in just one step. Electroluminescence spectra of the 2-temperature-step-grown fin LED are demonstrated.

Structural and Morphological Investigation of Non-basal-plane GaN by Vapor Phase Epitaxy ; with a Special Emphasis on Nonpolar M-plane

Author : Asako Hirai
Publisher :
ISBN 13 : 9781109367515
Total Pages : 320 pages
Book Rating : 4.3/5 (675 download)

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Book Synopsis Structural and Morphological Investigation of Non-basal-plane GaN by Vapor Phase Epitaxy ; with a Special Emphasis on Nonpolar M-plane by : Asako Hirai

Download or read book Structural and Morphological Investigation of Non-basal-plane GaN by Vapor Phase Epitaxy ; with a Special Emphasis on Nonpolar M-plane written by Asako Hirai and published by . This book was released on 2009 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, heteroepitaxy and homoepitaxy of nonpolar m-plane GaN were extensively studied. For the growth methods, two of the major GaN vapor phase epitaxy techniques, i.e. hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor deposition (MOCVD) were employed. Numerous characterization techniques were used to analyze the surface morphology and structural quality.

Growth of Semi-polar GaN on High Index Silicon (11h) Substrates by Metal Organic Vapor Phase Epitaxy

Author : Roghaiyeh Ravash
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (951 download)

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Book Synopsis Growth of Semi-polar GaN on High Index Silicon (11h) Substrates by Metal Organic Vapor Phase Epitaxy by : Roghaiyeh Ravash

Download or read book Growth of Semi-polar GaN on High Index Silicon (11h) Substrates by Metal Organic Vapor Phase Epitaxy written by Roghaiyeh Ravash and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Heteroepitaxial Growth of GaN Nanostructures Via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon Using Graphene as Buffer Layer

Download Heteroepitaxial Growth of GaN Nanostructures Via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon Using Graphene as Buffer Layer PDF Online Free

Author : Martin Heilmann
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (974 download)

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Book Synopsis Heteroepitaxial Growth of GaN Nanostructures Via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon Using Graphene as Buffer Layer by : Martin Heilmann

Download or read book Heteroepitaxial Growth of GaN Nanostructures Via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon Using Graphene as Buffer Layer written by Martin Heilmann and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Selective Area Growth and Characterization of GaN Based Nanostructures by Metal Organic Vapor Phase Epitaxy

Author : Wui Hean Goh
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (858 download)

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Book Synopsis Selective Area Growth and Characterization of GaN Based Nanostructures by Metal Organic Vapor Phase Epitaxy by : Wui Hean Goh

Download or read book Selective Area Growth and Characterization of GaN Based Nanostructures by Metal Organic Vapor Phase Epitaxy written by Wui Hean Goh and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this project is to establish a new technology to grow high quality GaN based material by nano selective area growth (NSAG). The motivation is to overcome the limit of the conventional growth method, which yield a high density of dislocation in the epitaxial layer. A low dislocation density in the epitaxial layer is crucial for high performance and high efficiency devices. This project focuses on growth and material characterization of GaN based nanostructures (nanodots and nanostripes) grown using the NSAG method that we developed. NSAG, with a precise control of diameter and position of nanostructures opens the door to new applications such as: 1) single photon source, 2) photonic crystal, 3) coalescence of high quality GaN template, and 4) novel nanodevices.

Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Characterization of GaN and In(subscript X)Ga(subscript 1-x)N Thin Films

Author : Andrew David Hanser
Publisher :
ISBN 13 :
Total Pages : 366 pages
Book Rating : 4.:/5 (46 download)

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Book Synopsis Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Characterization of GaN and In(subscript X)Ga(subscript 1-x)N Thin Films by : Andrew David Hanser

Download or read book Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Characterization of GaN and In(subscript X)Ga(subscript 1-x)N Thin Films written by Andrew David Hanser and published by . This book was released on 1998 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Optoelectronic Devices

Author : M Razeghi
Publisher : Elsevier
ISBN 13 : 9780080444260
Total Pages : 602 pages
Book Rating : 4.4/5 (442 download)

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Book Synopsis Optoelectronic Devices by : M Razeghi

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

MEMS Materials and Processes Handbook

Author : Reza Ghodssi
Publisher : Springer Science & Business Media
ISBN 13 : 0387473181
Total Pages : 1211 pages
Book Rating : 4.3/5 (874 download)

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Book Synopsis MEMS Materials and Processes Handbook by : Reza Ghodssi

Download or read book MEMS Materials and Processes Handbook written by Reza Ghodssi and published by Springer Science & Business Media. This book was released on 2011-03-18 with total page 1211 pages. Available in PDF, EPUB and Kindle. Book excerpt: MEMs Materials and Processes Handbook" is a comprehensive reference for researchers searching for new materials, properties of known materials, or specific processes available for MEMS fabrication. The content is separated into distinct sections on "Materials" and "Processes". The extensive Material Selection Guide" and a "Material Database" guides the reader through the selection of appropriate materials for the required task at hand. The "Processes" section of the book is organized as a catalog of various microfabrication processes, each with a brief introduction to the technology, as well as examples of common uses in MEMs.

Defects in Advanced Electronic Materials and Novel Low Dimensional Structures

Author : Jan Stehr
Publisher : Woodhead Publishing
ISBN 13 : 0081020546
Total Pages : 309 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Defects in Advanced Electronic Materials and Novel Low Dimensional Structures by : Jan Stehr

Download or read book Defects in Advanced Electronic Materials and Novel Low Dimensional Structures written by Jan Stehr and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap. Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers Addresses a range of defects in a variety of systems, providing a comparative approach Includes sections on advances in theory that provide insights on where this body of research might lead

Oxide Electronics

Author : Asim K. Ray
Publisher : John Wiley & Sons
ISBN 13 : 1119529476
Total Pages : 628 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis Oxide Electronics by : Asim K. Ray

Download or read book Oxide Electronics written by Asim K. Ray and published by John Wiley & Sons. This book was released on 2021-04-12 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.

Nanomaterials Chemistry

Author : C. N. R. Rao
Publisher : John Wiley & Sons
ISBN 13 : 3527611371
Total Pages : 420 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Nanomaterials Chemistry by : C. N. R. Rao

Download or read book Nanomaterials Chemistry written by C. N. R. Rao and published by John Wiley & Sons. This book was released on 2007-09-24 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: With this handbook, the distinguished team of editors has combined the expertise of leading nanomaterials scientists to provide the latest overview of this field. They cover the whole spectrum of nanomaterials, ranging from theory, synthesis, properties, characterization to application, including such new developments as quantum dots, nanoparticles, nanoporous materials, nanowires, nanotubes, and nanostructured polymers. The result is recommended reading for everybody working in nanoscience: Newcomers to the field can acquaint themselves with this exciting subject, while specialists will find answers to all their questions as well as helpful suggestions for further research.

The Chemistry of Metal CVD

Author : Toivo T. Kodas
Publisher : John Wiley & Sons
ISBN 13 : 3527615849
Total Pages : 562 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis The Chemistry of Metal CVD by : Toivo T. Kodas

Download or read book The Chemistry of Metal CVD written by Toivo T. Kodas and published by John Wiley & Sons. This book was released on 2008-09-26 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: High purity, thin metal coatings have a variety of important commercial applications, for example, in the microelectronics industry, as catalysts, as protective and decorative coatings as well as in gas-diffusion barriers. This book offers detailed, up- to-date coverage of the chemistry behind the vapor deposition of different metals from organometallic precursors. In nine chapters, the CVD of metals including aluminum, tungsten, gold, silver, platinum, palladium, nickel, as well as copper from copper(I) and copper(II) compounds is covered. The synthesis and properties of the precursors, the growth process, morphology, quality and adhesion of the resulting films as well as laser- assisted, ion- assisted and plasma-assisted methods are discussed. Present applications and prospects for future developments are summarized. With ca. 1000 references and a glossary, this book is a unique source of in-depth information. It is indispensable for chemists, physicists, engineers and materials scientists working with metal- coating processes and technologies. From Reviews: 'I highly recommend this book to anyone interested in learning more about the chemistry of metal CVD.' J. Am Chem. Soc.

III-Nitride Based Light Emitting Diodes and Applications

Author : Tae-Yeon Seong
Publisher : Springer Science & Business Media
ISBN 13 : 9400758634
Total Pages : 434 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis III-Nitride Based Light Emitting Diodes and Applications by : Tae-Yeon Seong

Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.