Heterostructural Interface Modelling

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Heterostructural Interface Modelling

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Author : David J. Fisher
Publisher : Materials Research Forum LLC
ISBN 13 : 1644900475
Total Pages : 162 pages
Book Rating : 4.6/5 (449 download)

Book Synopsis Heterostructural Interface Modelling by : David J. Fisher

Download or read book Heterostructural Interface Modelling written by David J. Fisher and published by Materials Research Forum LLC. This book was released on 2019-10-25 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: The interface structure of joined materials is a key factor in the development of high-tech components. The book reviews recent experimental and theoretical research in the area of modelling new types of joints and predicting the expected properties. Fields covered include lattice theory, semiconductor electronics, solid-state lithium-ion conductor, solid-state devices, filamentary growth of graphite, curved basal sheets of graphite, thermodynamic factors and lattice-matching criteria, minimisation of interface stresses due to misfit, epitaxial deposition, composite design, coincidence site lattice theory, ionic conductivity improvement by interfacial lattice strain, epitaxial thin-film systems, methods and software for identifying compatible material combinations. The book references 302 original resources and includes their direct web link for in-depth reading. Keywords: Interface Modelling, Lattice Theory, Semiconductor Electronics, Lithium-ion Conductor, Graphite Filaments, Graphite Sheets, Interface Stresses, Epitaxial Deposition, Composite Design, Coincidence-Site Lattice Theory, Ionic Conductivity, Interfacial Lattice Strain, Epitaxial Thin Films, Compatible-Material-Combination Software, Lattice-Matching to Silicon, Lattice-Matching to Smiconductors, Lattice-Matching to Sapphire, Lattice-Matching to Ceramics, Lattice-Matching to Metals, Lattice-Matching to Organic Materials.

Analysis and Simulation of Heterostructure Devices

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Author : Vassil Palankovski
Publisher : Springer Science & Business Media
ISBN 13 : 3709105609
Total Pages : 309 pages
Book Rating : 4.7/5 (91 download)

Book Synopsis Analysis and Simulation of Heterostructure Devices by : Vassil Palankovski

Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures

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Author : Alan Cocks
Publisher : Springer Science & Business Media
ISBN 13 : 9400749112
Total Pages : 309 pages
Book Rating : 4.4/5 (7 download)

Book Synopsis IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures by : Alan Cocks

Download or read book IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures written by Alan Cocks and published by Springer Science & Business Media. This book was released on 2012-09-26 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume constitutes the proceedings of the IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures, held in Beijing, 8-12 August, 2010. The symposium brought together the most active scientists working in this area from the fields of solid mechanics, composites, physics, and materials science and summarized the state-of-the-art research results with a view to advancing the frontiers of mechanics and materials physics. Nanomaterials and heterostructures have a large fraction of their atoms at surfaces and interfaces. These atoms see a different environment to those in the interior and can have a substantial effect on the overall mechanical and physical behaviour of a material. The last decade has witnessed a growing interest in the study of surfaces and how the surface behaviour couples with that of the bulk to determine the overall system response. The papers in this proceedings cover: extension of continuum mechanics and thermodynamics to the nano-scale; multiscale simulations; surface effects in monolithic nano-scale elements and nanostructures; mechanical and physical properties of nanomaterials and heterostructures; self-assembly, etc. The surface stress effect is inherently a multidisciplinary and fertile field; the Symposium truly reflects these features. This IUTAM Symposium was also dedicated to Professor Bhushan L Karihaloo of Cardiff University on his impending retirement, in recognition of his contributions to the fields of solid mechanics and nanomechanics, and to IUTAM activities in general.

C, H, N and O in Si and Characterization and Simulation of Materials and Processes

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Author : A. Borghesi
Publisher : Newnes
ISBN 13 : 044459633X
Total Pages : 580 pages
Book Rating : 4.4/5 (445 download)

Book Synopsis C, H, N and O in Si and Characterization and Simulation of Materials and Processes by : A. Borghesi

Download or read book C, H, N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

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Author : Wilfried G. J. H. M. van Sark
Publisher : Springer Science & Business Media
ISBN 13 : 3642222757
Total Pages : 588 pages
Book Rating : 4.6/5 (422 download)

Book Synopsis Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells by : Wilfried G. J. H. M. van Sark

Download or read book Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells written by Wilfried G. J. H. M. van Sark and published by Springer Science & Business Media. This book was released on 2011-11-16 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.

Characterization of Semiconductor Heterostructures and Nanostructures

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Author : Giovanni Agostini
Publisher : Newnes
ISBN 13 : 044459549X
Total Pages : 829 pages
Book Rating : 4.4/5 (445 download)

Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Giovanni Agostini

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Newnes. This book was released on 2013-04-11 with total page 829 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Defects in Self-Catalysed III-V Nanowires

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Author : James A. Gott
Publisher : Springer Nature
ISBN 13 : 3030940624
Total Pages : 158 pages
Book Rating : 4.0/5 (39 download)

Book Synopsis Defects in Self-Catalysed III-V Nanowires by : James A. Gott

Download or read book Defects in Self-Catalysed III-V Nanowires written by James A. Gott and published by Springer Nature. This book was released on 2022-01-28 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.

Characterization of Semiconductor Heterostructures and Nanostructures

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Author : G. Margaritondo
Publisher : Elsevier Inc. Chapters
ISBN 13 : 0128083476
Total Pages : 62 pages
Book Rating : 4.1/5 (28 download)

Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : G. Margaritondo

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by G. Margaritondo and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Computational Modelling of Nanomaterials

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Author : Panagiotis Grammatikopoulos
Publisher : Elsevier
ISBN 13 : 0128214988
Total Pages : 246 pages
Book Rating : 4.1/5 (282 download)

Book Synopsis Computational Modelling of Nanomaterials by : Panagiotis Grammatikopoulos

Download or read book Computational Modelling of Nanomaterials written by Panagiotis Grammatikopoulos and published by Elsevier. This book was released on 2020-09-30 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to their small size and their dependence on very fast phenomena, nanomaterials are ideal systems for computational modelling. This book provides an overview of various nanosystems classified by their dimensions: 0D (nanoparticles, QDs, etc.), 1D (nanowires, nanotubes), 2D (thin films, graphene, etc.), 3D (nanostructured bulk materials, devices). Fractal dimensions, such as nanoparticle agglomerates, percolating films and combinations of materials of different dimensionalities are also covered (e.g. epitaxial decoration of nanowires by nanoparticles, i.e. 0D+1D nanomaterials). For each class, the focus will be on growth, structure, and physical/chemical properties. The book presents a broad range of techniques, including density functional theory, molecular dynamics, non-equilibrium molecular dynamics, finite element modelling (FEM), numerical modelling and meso-scale modelling. The focus is on each method's relevance and suitability for the study of materials and phenomena in the nanoscale. This book is an important resource for understanding the mechanisms behind basic properties of nanomaterials, and the major techniques for computational modelling of nanomaterials. - Explores the major modelling techniques used for different classes of nanomaterial - Assesses the best modelling technique to use for each different type of nanomaterials - Discusses the challenges of using certain modelling techniques with specific nanomaterials

High Performance Computing in Science and Engineering, Garching/Munich 2007

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Author : Siegfried Wagner
Publisher : Springer Science & Business Media
ISBN 13 : 3540691820
Total Pages : 700 pages
Book Rating : 4.5/5 (46 download)

Book Synopsis High Performance Computing in Science and Engineering, Garching/Munich 2007 by : Siegfried Wagner

Download or read book High Performance Computing in Science and Engineering, Garching/Munich 2007 written by Siegfried Wagner and published by Springer Science & Business Media. This book was released on 2008-10-22 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the fourth time, the Leibniz Supercomputing Centre (LRZ) and the Com- tence Network for Technical, Scienti c High Performance Computing in Bavaria (KONWIHR) publishes the results from scienti c projects conducted on the c- puter systems HLRB I and II (High Performance Computer in Bavaria). This book reports the research carried out on the HLRB systems within the last three years and compiles the proceedings of the Third Joint HLRB and KONWIHR Result and Reviewing Workshop (3rd and 4th December 2007) in Garching. In 2000, HLRB I was the rst system in Europe that was capable of performing more than one Tera op/s or one billion oating point operations per second. In 2006 it was replaced by HLRB II. After a substantial upgrade it now achieves a peak performance of more than 62 Tera op/s. To install and operate this powerful system, LRZ had to move to its new facilities in Garching. However, the situation regarding the need for more computation cycles has not changed much since 2000. The demand for higher performance is still present, a trend that is likely to continue for the foreseeable future. Other resources like memory and disk space are currently in suf cient abundance on this new system.

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications

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Author : Peter Capper
Publisher : Springer Science & Business Media
ISBN 13 : 9780412715600
Total Pages : 632 pages
Book Rating : 4.7/5 (156 download)

Book Synopsis Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications by : Peter Capper

Download or read book Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications written by Peter Capper and published by Springer Science & Business Media. This book was released on 1997-10-31 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.

Atomic and Nano Scale Materials for Advanced Energy Conversion, 2 Volumes

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Author : Zongyou Yin
Publisher : John Wiley & Sons
ISBN 13 : 3527348921
Total Pages : 887 pages
Book Rating : 4.5/5 (273 download)

Book Synopsis Atomic and Nano Scale Materials for Advanced Energy Conversion, 2 Volumes by : Zongyou Yin

Download or read book Atomic and Nano Scale Materials for Advanced Energy Conversion, 2 Volumes written by Zongyou Yin and published by John Wiley & Sons. This book was released on 2022-04-18 with total page 887 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic and Nano Scale Materials for Advanced Energy Conversion Discover the latest advancements in energy conversion technologies used to develop modern sustainable energy techniques In Atomic and Nano Scale Materials for Advanced Energy Conversion, expert interdisciplinary researcher Dr. Zongyou Yin delivers a comprehensive overview of nano-to-atomic scale materials science, the development of advanced electrochemical, photochemical, photoelectrochemical, and photovoltaic energy conversion strategies, and the applications for sustainable water splitting and other technologies. The book offers readers cutting-edge information of two-dimensional nano, mixed-dimensional nano, nano rare earth, clusters, and single atoms. It constructively evaluates emerging nano-to-atomic scale energy conversion technologies for academic research and development (R&D) researchers and industrial technique consultants and engineers. The author sets out a systematic analysis of recent energy-conversion science, covering topics like adaptable manufacturing of Van der Waals heterojunctions, mixed-dimensional junctions, tandem structures, and superlattices. He also discusses function-oriented engineering in polymorphic phases, photon absorption, excitons-charges conversion, non-noble plasmonics, and solid-liquid-gas interactions. Readers will also benefit from: A thorough introduction to emerging nanomaterials for energy conversion, including electrochemical, photochemical, photoelectrochemical, and photovoltaic energy conversion An exploration of clusters for energy conversion, including electrochemical, photochemical, and photoelectrochemical clusters Practical discussions of single atoms for energy conversion in electrochemical, photochemical, and photoelectrochemical energy conversion technologies A thorough analysis of future perspectives and directions in advanced energy conversion technology Perfect for materials scientists, photochemists, electrochemists, and inorganic chemists, Atomic and Nano Scale Materials for Advanced Energy Conversion is also a must-read resource for catalytic chemists interested in the intersection of advanced chemistry and physics in energy conversion technologies.

Surfaces, Interfaces, and Heterostructures of CaF2/Si(111)

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Author : Gerard Chee Lai Wong
Publisher :
ISBN 13 :
Total Pages : 384 pages
Book Rating : 4.:/5 (33 download)

Book Synopsis Surfaces, Interfaces, and Heterostructures of CaF2/Si(111) by : Gerard Chee Lai Wong

Download or read book Surfaces, Interfaces, and Heterostructures of CaF2/Si(111) written by Gerard Chee Lai Wong and published by . This book was released on 1994 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Chemistry and Defects in Semiconductor Heterostructures: Volume 148

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Author : Mitsuo Kawabe
Publisher : Mrs Proceedings
ISBN 13 :
Total Pages : 496 pages
Book Rating : 4.3/5 (91 download)

Book Synopsis Chemistry and Defects in Semiconductor Heterostructures: Volume 148 by : Mitsuo Kawabe

Download or read book Chemistry and Defects in Semiconductor Heterostructures: Volume 148 written by Mitsuo Kawabe and published by Mrs Proceedings. This book was released on 1989-11-15 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Optoelectronic Properties of Graphene-Based van der Waals Hybrids

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Author : Kallol Roy
Publisher : Springer Nature
ISBN 13 : 3030596273
Total Pages : 277 pages
Book Rating : 4.0/5 (35 download)

Book Synopsis Optoelectronic Properties of Graphene-Based van der Waals Hybrids by : Kallol Roy

Download or read book Optoelectronic Properties of Graphene-Based van der Waals Hybrids written by Kallol Roy and published by Springer Nature. This book was released on 2020-10-21 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with the development and in-depth study of a new class of optoelectronic material platform comprising graphene and MoS_2, in which MoS_2 is used essentially to sensitize graphene and lead to unprecedently high gain and novel opto-electronic memory effects. The results presented here open up the possibility of designing a new class of photosensitive devices which can be utilized in various optoelectronic applications including biomedical sensing, astronomical sensing, optical communications, optical quantum information processing and in applications requiring low intensity photodetection and number resolved single photon detection.

Characterization of Semiconductor Heterostructures and Nanostructures

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Author : Giovanni Agostini
Publisher : Elsevier
ISBN 13 : 0080558151
Total Pages : 501 pages
Book Rating : 4.0/5 (85 download)

Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Giovanni Agostini

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

An Effective-mass Theory of the Electronic Properties of Semiconductor Heterostructures

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Author : Steve Richard White
Publisher :
ISBN 13 :
Total Pages : 460 pages
Book Rating : 4.:/5 (318 download)

Book Synopsis An Effective-mass Theory of the Electronic Properties of Semiconductor Heterostructures by : Steve Richard White

Download or read book An Effective-mass Theory of the Electronic Properties of Semiconductor Heterostructures written by Steve Richard White and published by . This book was released on 1982 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: