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Author : Mark A. Fanton
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (221 download)
Download or read book Growth of Single Crystal Silicon Carbide by Halide Chemical Vapor Deposition written by Mark A. Fanton and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Payam Shoghi
Publisher :
ISBN 13 :
Total Pages : 154 pages
Book Rating : 4.:/5 (841 download)
Download or read book Growth of Single Crystalline Silicon Carbide on Aluminum Nitride by Chemical Vapor Deposition written by Payam Shoghi and published by . This book was released on 2008 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystalline layers of SiC were grown on A1N substrate using chemical vapor deposition (CVD) from a single gas source; Trimethylsilane as well as a combination of ethylene (C[subscript]2H[subscript]4), silane (SiH[subscript]4), and hydrogen (H[subscript]2) gas. The growth was conducted at temperatures ranging from 1100 to 1350[degrees]C and pressures ranging from 0.09 torr to l.86 torr. The study was conducted on AlN grown on sapphire as well as on polycrystalline AlN substrates. The CVD growth system, which was made by OSEMI, was designed to operate in wide range of pressures (10[superscript]-8 to atmospheric) and temperatures (room temperature to -2000[degrees]C) using RF heating. The system is integrated with a molecular beam epitaxy (MBE) unit to enable direct transfer of A1N layers, grown by MBE, into the CVD system. X-ray measurements, carried out using PANalytical X'Pert X-ray diffraction system demonstrated growth of single crystalline SiC while surface morphology was examined using Scanning Electron Microscopy (SEM) and Atomic Force Microscope (AFM), qualitative measure of the layers' stoichiometry was carried out using Energy Dispersive X-ray examination using conventional EDAX. The formation of single crystalline 3C-SiC was confirmed by X-ray diffraction. Atomic force microscopy (AFM) showed an increase in the roughness of the morphology for thick cubic SiC on A1N on Sapphire substrate. SEM and EDAX measurements showed the thickness of the SiC thin film and the ratio of Si and C atoms in the film.
Author : Kalyan Raju Cherukuvada
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (841 download)
Download or read book Growth of Single Crystalline Cubic Silicon Carbide on Porous Silicon by Chemical Vapor Deposition written by Kalyan Raju Cherukuvada and published by . This book was released on 2004 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single crystalline 3C-SiC layers were grown on a porous Si seed using a single gas source, trimethylsilane. The method is environmentally friendly, utilizes a non-toxic gas, and is economical. Conversion of porous Si into SiC was also attempted using methane but the process did not lead to the formation of continuous layers. The porous Si layers were made by anodizing p-type Si (100) wafers in a mixture of hydrofluoric acid and ethanol. The SiC was grown in a UHV system that was converted into a low pressure CVD reactor and was fitted with a RF heating stage capable of heating the samples up to 1200 [superscript]oC. The formation of stoichiometric SiC was confirmed by Energy Dispersive Spectrometry (EDS) while the crystal structure was examined by X-ray diffraction. Atomic force microscopy (AFM) showed the formation of rough surfaces for thin SiC layers and large flat terraces for thick SiC layers. X-ray diffraction indicates the formation of fully relaxed single crystalline 3C-SIC (100) on Si (100) wafers. And it also suggests the presence of dominating SiC (100) crystal orientations within the layer.
Author : Muthu Wijesundara
Publisher : Springer Science & Business Media
ISBN 13 : 1441971211
Total Pages : 247 pages
Book Rating : 4.4/5 (419 download)
Download or read book Silicon Carbide Microsystems for Harsh Environments written by Muthu Wijesundara and published by Springer Science & Business Media. This book was released on 2011-05-17 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. The material covered not only reviews the state-of-the-art MEMS devices, provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.
Author : Roberto Fornari
Publisher : Woodhead Publishing
ISBN 13 : 008102097X
Total Pages : 596 pages
Book Rating : 4.0/5 (81 download)
Download or read book Single Crystals of Electronic Materials written by Roberto Fornari and published by Woodhead Publishing. This book was released on 2018-09-18 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. Presents the latest research and most comprehensive overview of both standard and novel semiconductors Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
Author : Feng Liu
Publisher :
ISBN 13 :
Total Pages : 146 pages
Book Rating : 4.:/5 (625 download)
Download or read book Vapor Growth and Characterization of Single Crystal Silicon Carbide written by Feng Liu and published by . This book was released on 2004 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author : H. K. Henisch
Publisher : Elsevier
ISBN 13 : 1483152618
Total Pages : 379 pages
Book Rating : 4.4/5 (831 download)
Download or read book Silicon Carbide — 1968 written by H. K. Henisch and published by Elsevier. This book was released on 2013-10-22 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.
Author : James Michael Powers
Publisher :
ISBN 13 :
Total Pages : 316 pages
Book Rating : 4.:/5 (33 download)
Download or read book A Surface Science Investigation of Silicon Carbide written by James Michael Powers and published by . This book was released on 1991 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zhe Chuan Feng
Publisher : CRC Press
ISBN 13 : 0429583958
Total Pages : 465 pages
Book Rating : 4.4/5 (295 download)
Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Author : Robert P. Devaty
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3038130532
Total Pages : 1670 pages
Book Rating : 4.0/5 (381 download)
Download or read book Silicon Carbide and Related Materials 2005 written by Robert P. Devaty and published by Trans Tech Publications Ltd. This book was released on 2006-10-15 with total page 1670 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
Author : Robert W. Bartlett
Publisher :
ISBN 13 :
Total Pages : 49 pages
Book Rating : 4.:/5 (227 download)
Download or read book Growth, Processing and Characterization of Beta-silicon Carbide Single Crystals written by Robert W. Bartlett and published by . This book was released on 1967 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial vapor deposition of beta-silicon carbide on (111) beta-silicon carbide platelets and diborane doping were used to grow p-type layers on n-type substrates. Etching and thin film metallizing procedures were developed for silicon carbide, a chlorine-oxygen gas etch at 900 degrees C being used. Specific surface characteristics of solution-grown crystals, epitaxial crystals, and crystals etched in various fluids were correlated with crystal polarity. (Author).
Author : Roland Madar
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035706298
Total Pages : 1548 pages
Book Rating : 4.0/5 (357 download)
Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by Trans Tech Publications Ltd. This book was released on 2004-06-15 with total page 1548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Download or read book Epitaxial Growth of Silicon Carbide on On-axis Silicon Carbide Substrates Using Methyltrichlorosilane Chemical Vapor Deposition written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H-silicon carbide (4H-SiC) is a wide band gap semiconductor with outstanding capabilities for high temperature, high power, and high frequency electronic device applications. Advances in its processing technology have resulted in large micropipe-free single crystals and high speed epitaxial growth on off-axis silicon face substrates. Extraordinarily high growth rates of high quality epitaxial films (>100 [Mu]m per hour) have been achieved, but only on off-axis substrates (misoriented 4° to 8° from the (0001) crystallographic plane). There is a strong incentive to procure an on-axis growth procedure, due to the excessive waste of high quality single crystal associated with wafering off-axis substrates. The purpose of this research was to develop a reliable process for homoepitaxial growth of 4H-SiC on on-axis 4H-SiC. Typically the use of on-axis SiC for epitaxial growth is undesired due to the increased probability of 3C-SiC inclusions and polycrystalline growth. However, it is believed that the presence of chlorine during reaction may reduce the presence of 3C-SiC and improve the quality of the epitaxial film. Therefore homoepitaxial SiC was deposited using methyltrichlorosilane (MTS) and ethane sources with carrier gases consisting of argon-hydrogen mixtures. Ethane was used to increase the C/Si ratio, to aid in the prevention of 3C-SiC, and to help eliminate silicon droplets deposited during epitaxial growth. Deposition occurred in a homemade, quartz, cold wall chemical vapor deposition reactor. Epitaxial films on on-axis 4H-SiC were deposited without the presence of 3C-SiC inclusions or polycrystalline SiC, as observed by defect selective etching, scanning electron microscopy and optical microscopy. Large defect free areas, [similar to]5 mm[superscript]2, with epitaxial film thicknesses of [similar to]6 [Mu]m were grown on on-axis 4H-SiC. Epitaxial films had approximately an 80%, [similar to]20 cm[superscript]-2, decrease in defect density as compared to the substrates. The growth rate was independent of face polarity and orientation of the substrate. The optimal temperature for hydrogen etching, to promote the smoothest epitaxial films for on-axis substrates (both C- and Si-polarities), is [similar to]1550 °C for 10 minutes in the presence of 2 slm hydrogen. The optimum C/Si ratio for epitaxial growth on on-axis 4H-SiC is 1; excess carbon resulted in the codeposition of graphite and cone-shaped silicon carbide defects.
Author :
Publisher :
ISBN 13 :
Total Pages : 4 pages
Book Rating : 4.:/5 (15 download)
Download or read book In Situ Studies of Defect Nucleation During the PVT and CVD Growth of Silicon Carbide Single Crystals written by and published by . This book was released on 2006 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: A complete chemical vapor deposition (CVD) system for growing SiC epitaxial films and bulk crystals was set up using commercially procured gas flow controls and scrubber units, and integrating them with a modified in-house designed growth chamber that has options for in situ X-ray topographic study. This CVD system uses silicon tetrachloride (SiCl4), silane (SiH4), propane (C3H8), hydrogen (H2) and argon (Ar) gases. The aggressive SiCl4 corrosion in the chamber and the gas lines has been investigated and found to be predominantly related to moisture, and this severe problem has been solved by keeping the gas lines and the growth reactor in vacuum or in inert atmosphere when the CVD system is not running.
Author :
Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (873 download)
Download or read book A Surface Science Investigation of Silicon Carbide written by and published by . This book was released on 1991 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gladys Felton
Publisher :
ISBN 13 :
Total Pages : 216 pages
Book Rating : 4.:/5 (3 download)
Download or read book Growth of Beta Silicon Carbide in a Reduced Pressure Chemical Vapor Deposition System written by Gladys Felton and published by . This book was released on 1986 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
