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Growth Of Iii Nitrides By Molecular Beam Epitaxy For Heterojunction Field Effect Transistors And Optoelectronic Applications
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Book Synopsis Growth of III-nitrides by Molecular Beam Epitaxy for Heterojunction Field Effect Transistors and Optoelectronic Applications by : Jeonghyun Hwang
Download or read book Growth of III-nitrides by Molecular Beam Epitaxy for Heterojunction Field Effect Transistors and Optoelectronic Applications written by Jeonghyun Hwang and published by . This book was released on 2004 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis III-Nitride Electronic Devices by : Rongming Chu
Download or read book III-Nitride Electronic Devices written by Rongming Chu and published by Academic Press. This book was released on 2019-10 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub
Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Book Synopsis III-Nitride Semiconductor Optoelectronics by :
Download or read book III-Nitride Semiconductor Optoelectronics written by and published by Academic Press. This book was released on 2017-01-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2004 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Springer Handbook of Electronic and Photonic Materials by : Safa Kasap
Download or read book Springer Handbook of Electronic and Photonic Materials written by Safa Kasap and published by Springer Science & Business Media. This book was released on 2007-08-01 with total page 1409 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributions from well known and respected researchers throughout the world Thorough coverage of electronic and opto-electronic materials that today's electrical engineers, material scientists and physicists need Interdisciplinary approach encompasses research in disciplines such as materials science, electrical engineering, chemical engineering, mechanical engineering, physics and chemistry
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1987 with total page 1124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena by : Kompa, Günter
Download or read book Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Book Synopsis Low-dimensional Nitride Semiconductors by : Bernard Gil
Download or read book Low-dimensional Nitride Semiconductors written by Bernard Gil and published by . This book was released on 2002 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnatic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid-state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printer and CD drives. Ultraviolet detectors will be used at a wide scale for many application, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.
Book Synopsis III-Nitride Semiconductors by : Omar Manasreh
Download or read book III-Nitride Semiconductors written by Omar Manasreh and published by CRC Press. This book was released on 2002-11-15 with total page 832 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field. This unique volume provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the field and stimulus for further advances for experienced researchers. The technical chapters in this volume are focused on various aspects of growth modes, growth techniques such as molecular beam epitaxy, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, epitaxial lateral overgrowth, hydride vapor phase epitaxial growth, as well as substrate issues and characterization results.
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2670 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Third Symposium on III-V Nitride Materials and Processes by : T. D. Moustakas
Download or read book Proceedings of the Third Symposium on III-V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1999 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the 18th International Conference on Defects in Semiconductors by : Masashi Suezawa
Download or read book Proceedings of the 18th International Conference on Defects in Semiconductors written by Masashi Suezawa and published by . This book was released on 1995 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis III-V Nitride Semiconductors by : Edward T. Yu
Download or read book III-V Nitride Semiconductors written by Edward T. Yu and published by CRC Press. This book was released on 2022-10-30 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Book Synopsis Proceedings of the Third Symposium on III-V Nitride Materials and Processes by : T. D. Moustakas
Download or read book Proceedings of the Third Symposium on III-V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1999 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
