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Gettering Defects In Semiconductors
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Author :Victor A. Perevostchikov Publisher :Springer Science & Business Media ISBN 13 :9783540262442 Total Pages :412 pages Book Rating :4.2/5 (624 download)
Book Synopsis Gettering Defects in Semiconductors by : Victor A. Perevostchikov
Download or read book Gettering Defects in Semiconductors written by Victor A. Perevostchikov and published by Springer Science & Business Media. This book was released on 2005-09-15 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XV by : J.D. Murphy
Download or read book Gettering and Defect Engineering in Semiconductor Technology XV written by J.D. Murphy and published by Trans Tech Publications Ltd. This book was released on 2013-10-07 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XV by : J. D. Murphy
Download or read book Gettering and Defect Engineering in Semiconductor Technology XV written by J. D. Murphy and published by . This book was released on 2013 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems. Review from Book News Inc.: The proceedings for GADEST 2013 contains 84 papers on such matters as defect engineering in silicon solar cells, structural and production issues in cast silicon materials for solar cells, characterizing silicon for solar cells, intrinsic point defects in silicon, light impurities in silicon-based materials, fundamental properties and gettering of metals in silicon, extended and implantation-related defects in silicon, germanium-based devices and materials, semiconductors other than silicon and germanium, and nanostructures and new materials systems.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XI by : Bernard Pichaud
Download or read book Gettering and Defect Engineering in Semiconductor Technology XI written by Bernard Pichaud and published by Trans Tech Publications Ltd. This book was released on 2005-12-15 with total page 830 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at La Badine at the Giens peninsula south of France.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XII by : Anna Cavallini
Download or read book Gettering and Defect Engineering in Semiconductor Technology XII written by Anna Cavallini and published by Trans Tech Publications Ltd. This book was released on 2007-10-25 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XIV by : W. Jantsch
Download or read book Gettering and Defect Engineering in Semiconductor Technology XIV written by W. Jantsch and published by Trans Tech Publications Ltd. This book was released on 2011-08-16 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). The papers contained herein cover the most important and timely issues in the field of Gettering and Defect Engineering in Semiconductor Technology, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XIII by : Martin Kittler
Download or read book Gettering and Defect Engineering in Semiconductor Technology XIII written by Martin Kittler and published by Trans Tech Publications Ltd. This book was released on 2009-10-28 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology by : H. Richter
Download or read book Gettering and Defect Engineering in Semiconductor Technology written by H. Richter and published by . This book was released on 2004 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XVI by : Peter Pichler
Download or read book Gettering and Defect Engineering in Semiconductor Technology XVI written by Peter Pichler and published by Trans Tech Publications Ltd. This book was released on 2015-10-23 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: Collection of selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany. The 7 1 papers are grouped as follows: Chapter 1: Growth of Mono- and Multi-Crystalline Silicon; Chapter 2: Passivation and Defect Studies in Solar Cells; Chapter 3: Intrinsic Point Defects and Dislocations in Silicon; Chapter 4: Light Elements in Silicon-Based Materials; Chapter 5: Properties and Gettering of Transition Metals in Silicon; Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium; Chapter 7: Thermal Properties of Semiconductors; Chapter 8: Luminescence and Optical Properties of Semiconductors; Chapter 9: Nano-Sized Layers and Structures; Chapter 10: Wide-Bandgap Semiconductors; Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology X by : Hans Richter
Download or read book Gettering and Defect Engineering in Semiconductor Technology X written by Hans Richter and published by Trans Tech Publications Ltd. This book was released on 2003-09-30 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology VII by : Cor Claeys
Download or read book Gettering and Defect Engineering in Semiconductor Technology VII written by Cor Claeys and published by Trans Tech Publications Ltd. This book was released on 1997-07-25 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology ... by :
Download or read book Gettering and Defect Engineering in Semiconductor Technology ... written by and published by . This book was released on 2005 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology VIII by :
Download or read book Gettering and Defect Engineering in Semiconductor Technology VIII written by and published by . This book was released on 1999 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field. Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view. Contents Sections: 1. Keynote Address. 2. Invited Papers. 3. Silicon-Based Materials. 4. Gettering Techniques. 5. Oxygen in Silicon and Germanium. 6. Rare Earth Impurities in Silicon. 7. Radiation Effects in Semiconductors. 8. Dislocations in Silicon. 9. Material Characterisation. 10. Device Characterisation. 11. Hydrogen-Related Defects and Processes.
Book Synopsis Extended Defects in Semiconductors by : D. B. Holt
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology '89 by : Martin Kittler
Download or read book Gettering and Defect Engineering in Semiconductor Technology '89 written by Martin Kittler and published by Scitec Publications. This book was released on 1989 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gettering and Defect Engineerig in Semiconductor Technology XII by : Anna Cavallini
Download or read book Gettering and Defect Engineerig in Semiconductor Technology XII written by Anna Cavallini and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS).This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors' fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Book Synopsis Defects and Properties of Semiconductors by : J. Chikawa
Download or read book Defects and Properties of Semiconductors written by J. Chikawa and published by Springer. This book was released on 2011-12-25 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains nearly all of the papers presented at the Symposium on "Defects and Qualities of Semiconductors" which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project "Quality Developement of Semiconductors by Utilization of Crystal Defects" sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
