Gan And Related Alloys 1999

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GaN and Related Alloys - 1999:

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Author : Thomas H. Myers
Publisher : Cambridge University Press
ISBN 13 : 9781107413290
Total Pages : 1052 pages
Book Rating : 4.4/5 (132 download)

Book Synopsis GaN and Related Alloys - 1999: by : Thomas H. Myers

Download or read book GaN and Related Alloys - 1999: written by Thomas H. Myers and published by Cambridge University Press. This book was released on 2014-06-05 with total page 1052 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.

GaN and Related Alloys - 1999: Volume 595

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Author : Thomas H. Myers
Publisher :
ISBN 13 :
Total Pages : 1070 pages
Book Rating : 4.:/5 (318 download)

Book Synopsis GaN and Related Alloys - 1999: Volume 595 by : Thomas H. Myers

Download or read book GaN and Related Alloys - 1999: Volume 595 written by Thomas H. Myers and published by . This book was released on 2000-05-05 with total page 1070 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.

GaN and Related Alloys

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Author :
Publisher :
ISBN 13 :
Total Pages : 872 pages
Book Rating : 4.3/5 (91 download)

Book Synopsis GaN and Related Alloys by :

Download or read book GaN and Related Alloys written by and published by . This book was released on 2004 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN and Related Alloys: Volume 537

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Author : S. J. Pearton
Publisher :
ISBN 13 :
Total Pages : 1056 pages
Book Rating : 4.:/5 (318 download)

Book Synopsis GaN and Related Alloys: Volume 537 by : S. J. Pearton

Download or read book GaN and Related Alloys: Volume 537 written by S. J. Pearton and published by . This book was released on 1999-09-14 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.

GaN-based Materials and Devices

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Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9812388443
Total Pages : 295 pages
Book Rating : 4.8/5 (123 download)

Book Synopsis GaN-based Materials and Devices by : Michael Shur

Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Infrared Ellipsometry on Semiconductor Layer Structures

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Author : Mathias Schubert
Publisher : Springer Science & Business Media
ISBN 13 : 9783540232490
Total Pages : 216 pages
Book Rating : 4.2/5 (324 download)

Book Synopsis Infrared Ellipsometry on Semiconductor Layer Structures by : Mathias Schubert

Download or read book Infrared Ellipsometry on Semiconductor Layer Structures written by Mathias Schubert and published by Springer Science & Business Media. This book was released on 2004-11-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.

Lasers

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Author : Charles Blain
Publisher : Nova Publishers
ISBN 13 : 9781590332252
Total Pages : 214 pages
Book Rating : 4.3/5 (322 download)

Book Synopsis Lasers by : Charles Blain

Download or read book Lasers written by Charles Blain and published by Nova Publishers. This book was released on 2002 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Developments in lasers continue to enable progress in many areas such as eye surgery, the recording industry and dozens of others. This book presents citations from the book literature for the last 25 years and groups them for ease of access which is also provided by subject, author and titles indexes.

Optoelectronic Devices

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Author : M Razeghi
Publisher : Elsevier
ISBN 13 : 9780080444260
Total Pages : 602 pages
Book Rating : 4.4/5 (442 download)

Book Synopsis Optoelectronic Devices by : M Razeghi

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Gallium Nitride Power Devices

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Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767615
Total Pages : 298 pages
Book Rating : 4.3/5 (517 download)

Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

VLSI, Microwave and Wireless Technologies

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Author : Brijesh Mishra
Publisher : Springer Nature
ISBN 13 : 9811903123
Total Pages : 790 pages
Book Rating : 4.8/5 (119 download)

Book Synopsis VLSI, Microwave and Wireless Technologies by : Brijesh Mishra

Download or read book VLSI, Microwave and Wireless Technologies written by Brijesh Mishra and published by Springer Nature. This book was released on 2022-09-03 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprises the proceedings of the International Conference on VLSI & Microwave and Wireless Technologies (ICVMWT-2021). The book includes peer-reviewed papers on the core technological developments in emerging fields like wireless communication, RF microwave/radar, VLSI, optical communication, etc. The book will serve as a valuable reference resource for academics and researchers across the globe.

Indium Nitride and Related Alloys

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Author : Timothy David Veal
Publisher : CRC Press
ISBN 13 : 1439859612
Total Pages : 707 pages
Book Rating : 4.4/5 (398 download)

Book Synopsis Indium Nitride and Related Alloys by : Timothy David Veal

Download or read book Indium Nitride and Related Alloys written by Timothy David Veal and published by CRC Press. This book was released on 2011-06-03 with total page 707 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.

Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides

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Author : Hadis Morkoç
Publisher : John Wiley & Sons
ISBN 13 : 3527628428
Total Pages : 883 pages
Book Rating : 4.5/5 (276 download)

Book Synopsis Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides by : Hadis Morkoç

Download or read book Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 883 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.

Extreme Environment Electronics

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Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 143987431X
Total Pages : 1041 pages
Book Rating : 4.4/5 (398 download)

Book Synopsis Extreme Environment Electronics by : John D. Cressler

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Physics and Applications of Dilute Nitrides

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Author : I. Buyanova
Publisher : CRC Press
ISBN 13 : 1482296497
Total Pages : 457 pages
Book Rating : 4.4/5 (822 download)

Book Synopsis Physics and Applications of Dilute Nitrides by : I. Buyanova

Download or read book Physics and Applications of Dilute Nitrides written by I. Buyanova and published by CRC Press. This book was released on 2004-08-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at t

Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth

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Author : Hadis Morkoç
Publisher : John Wiley & Sons
ISBN 13 : 3527628460
Total Pages : 1311 pages
Book Rating : 4.5/5 (276 download)

Book Synopsis Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth by : Hadis Morkoç

Download or read book Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 1311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

III-Nitride Semiconductors

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Author : M.O. Manasreh
Publisher : Elsevier
ISBN 13 : 0080534449
Total Pages : 463 pages
Book Rating : 4.0/5 (85 download)

Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh

Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Silicon Carbide and Related Materials--1999

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Author :
Publisher :
ISBN 13 :
Total Pages : 908 pages
Book Rating : 4.X/5 (6 download)

Book Synopsis Silicon Carbide and Related Materials--1999 by :

Download or read book Silicon Carbide and Related Materials--1999 written by and published by . This book was released on 2000 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: