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GANs in Action

Author : Vladimir Bok
Publisher : Simon and Schuster
ISBN 13 : 1638354235
Total Pages : 367 pages
Book Rating : 4.6/5 (383 download)

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Book Synopsis GANs in Action by : Vladimir Bok

Download or read book GANs in Action written by Vladimir Bok and published by Simon and Schuster. This book was released on 2019-09-09 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Deep learning systems have gotten really great at identifying patterns in text, images, and video. But applications that create realistic images, natural sentences and paragraphs, or native-quality translations have proven elusive. Generative Adversarial Networks, or GANs, offer a promising solution to these challenges by pairing two competing neural networks' one that generates content and the other that rejects samples that are of poor quality. GANs in Action: Deep learning with Generative Adversarial Networks teaches you how to build and train your own generative adversarial networks. First, you'll get an introduction to generative modelling and how GANs work, along with an overview of their potential uses. Then, you'll start building your own simple adversarial system, as you explore the foundation of GAN architecture: the generator and discriminator networks. Purchase of the print book includes a free eBook in PDF, Kindle, and ePub formats from Manning Publications.

Gallium-Nitride (GaN) II

Author :
Publisher : Academic Press
ISBN 13 : 0080864554
Total Pages : 509 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Gallium-Nitride (GaN) II by :

Download or read book Gallium-Nitride (GaN) II written by and published by Academic Press. This book was released on 1998-10-22 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

GaN and Related Materials

Author : Stephen J. Pearton
Publisher : CRC Press
ISBN 13 : 9789056995171
Total Pages : 556 pages
Book Rating : 4.9/5 (951 download)

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Book Synopsis GaN and Related Materials by : Stephen J. Pearton

Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 1997-10-29 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

GaN and Related Materials II

Author : Stephen J. Pearton
Publisher : CRC Press
ISBN 13 : 9789056996864
Total Pages : 724 pages
Book Rating : 4.9/5 (968 download)

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Book Synopsis GaN and Related Materials II by : Stephen J. Pearton

Download or read book GaN and Related Materials II written by Stephen J. Pearton and published by CRC Press. This book was released on 2000-10-31 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.

Large Signal Modeling of GaN Device for High Power Amplifier Design

Author : Anwar Hasan Jarndal
Publisher : kassel university press GmbH
ISBN 13 : 3899582586
Total Pages : 136 pages
Book Rating : 4.8/5 (995 download)

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Book Synopsis Large Signal Modeling of GaN Device for High Power Amplifier Design by : Anwar Hasan Jarndal

Download or read book Large Signal Modeling of GaN Device for High Power Amplifier Design written by Anwar Hasan Jarndal and published by kassel university press GmbH. This book was released on 2006 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN-based Materials and Devices

Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)

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Book Synopsis GaN-based Materials and Devices by : Michael Shur

Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Large-signal Modeling of GaN HEMTs for Linear Power Amplifier Design

Author : Endalkachew Shewarega Mengistu
Publisher : kassel university press GmbH
ISBN 13 : 3899583817
Total Pages : 153 pages
Book Rating : 4.8/5 (995 download)

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Book Synopsis Large-signal Modeling of GaN HEMTs for Linear Power Amplifier Design by : Endalkachew Shewarega Mengistu

Download or read book Large-signal Modeling of GaN HEMTs for Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and published by kassel university press GmbH. This book was released on 2008 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices

Author : Hadis Morkoç
Publisher : John Wiley & Sons
ISBN 13 : 3527628452
Total Pages : 902 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices by : Hadis Morkoç

Download or read book Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Handbook of GaN Semiconductor Materials and Devices

Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1351648055
Total Pages : 775 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

Author : Sourabh Khandelwal
Publisher : Springer Nature
ISBN 13 : 3030777308
Total Pages : 194 pages
Book Rating : 4.0/5 (37 download)

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Book Synopsis Advanced SPICE Model for GaN HEMTs (ASM-HEMT) by : Sourabh Khandelwal

Download or read book Advanced SPICE Model for GaN HEMTs (ASM-HEMT) written by Sourabh Khandelwal and published by Springer Nature. This book was released on 2022-01-01 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.

GaN Transistor Modeling for RF and Power Electronics

Author : Yogesh Singh Chauhan
Publisher : Elsevier
ISBN 13 : 0323999409
Total Pages : 262 pages
Book Rating : 4.3/5 (239 download)

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Book Synopsis GaN Transistor Modeling for RF and Power Electronics by : Yogesh Singh Chauhan

Download or read book GaN Transistor Modeling for RF and Power Electronics written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-05-31 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. This book provides an overview of the operation and physics of GaN-based transistors All aspects of the ASM-HEMT model for GaN circuits, an industry standard model, are described in depth by the developers of the model Parameter extraction of GaN devices and measurement data requirements for GaN model extraction are detailed

Microwave High Power High Efficiency GaN Amplifiers for Communication

Author : Subhash Chandra Bera
Publisher : Springer Nature
ISBN 13 : 9811962669
Total Pages : 263 pages
Book Rating : 4.8/5 (119 download)

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Book Synopsis Microwave High Power High Efficiency GaN Amplifiers for Communication by : Subhash Chandra Bera

Download or read book Microwave High Power High Efficiency GaN Amplifiers for Communication written by Subhash Chandra Bera and published by Springer Nature. This book was released on 2022-11-29 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.

Efficiency Enhancement of Linear GaN RF power Amplifiers Using the Doherty Technique

Author :
Publisher : kassel university press GmbH
ISBN 13 : 3899586239
Total Pages : 196 pages
Book Rating : 4.8/5 (995 download)

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Book Synopsis Efficiency Enhancement of Linear GaN RF power Amplifiers Using the Doherty Technique by :

Download or read book Efficiency Enhancement of Linear GaN RF power Amplifiers Using the Doherty Technique written by and published by kassel university press GmbH. This book was released on with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ymwelydd Eglwys Chatham Street ... am 1874, yn nghyd ag Annerchiad gan y Parch. Owen Jones

Author : Eglwys Chatham Street (LIVERPOOL)
Publisher :
ISBN 13 :
Total Pages : 48 pages
Book Rating : 4.0/5 (22 download)

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Book Synopsis Ymwelydd Eglwys Chatham Street ... am 1874, yn nghyd ag Annerchiad gan y Parch. Owen Jones by : Eglwys Chatham Street (LIVERPOOL)

Download or read book Ymwelydd Eglwys Chatham Street ... am 1874, yn nghyd ag Annerchiad gan y Parch. Owen Jones written by Eglwys Chatham Street (LIVERPOOL) and published by . This book was released on 1874 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN Power Devices and Applications

Author : Alex Lidow
Publisher :
ISBN 13 : 9780996649223
Total Pages : pages
Book Rating : 4.6/5 (492 download)

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Book Synopsis GaN Power Devices and Applications by : Alex Lidow

Download or read book GaN Power Devices and Applications written by Alex Lidow and published by . This book was released on 2021-10 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Power Devices and Applications, provides an update on gallium nitride (GaN) technology and applications by leading experts. It includes detailed descriptions of the latest examples of GaN's usage in power supplies, lidar systems, motor drives, and space applications.

Generative Deep Learning

Author : David Foster
Publisher : "O'Reilly Media, Inc."
ISBN 13 : 1492041890
Total Pages : 360 pages
Book Rating : 4.4/5 (92 download)

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Book Synopsis Generative Deep Learning by : David Foster

Download or read book Generative Deep Learning written by David Foster and published by "O'Reilly Media, Inc.". This book was released on 2019-06-28 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: Generative modeling is one of the hottest topics in AI. It’s now possible to teach a machine to excel at human endeavors such as painting, writing, and composing music. With this practical book, machine-learning engineers and data scientists will discover how to re-create some of the most impressive examples of generative deep learning models, such as variational autoencoders,generative adversarial networks (GANs), encoder-decoder models and world models. Author David Foster demonstrates the inner workings of each technique, starting with the basics of deep learning before advancing to some of the most cutting-edge algorithms in the field. Through tips and tricks, you’ll understand how to make your models learn more efficiently and become more creative. Discover how variational autoencoders can change facial expressions in photos Build practical GAN examples from scratch, including CycleGAN for style transfer and MuseGAN for music generation Create recurrent generative models for text generation and learn how to improve the models using attention Understand how generative models can help agents to accomplish tasks within a reinforcement learning setting Explore the architecture of the Transformer (BERT, GPT-2) and image generation models such as ProGAN and StyleGAN