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Fundamentals Of Carrier Transport Second Edition
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Book Synopsis Fundamentals of Carrier Transport by : Mark Lundstrom
Download or read book Fundamentals of Carrier Transport written by Mark Lundstrom and published by Cambridge University Press. This book was released on 2000-10-26 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Carrier Transport explores the behavior of charged carriers in semiconductors and semiconductor devices for readers without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices and coverage of "full band" transport. Lundstrom also covers both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. He explains in detail the use of Monte Carlo simulation methods and provides many homework exercises along with a variety of worked examples. What makes this book unique is its broad theoretical treatment of transport for advanced students and researchers engaged in experimental semiconductor device research and development.
Book Synopsis Fundamentals of Carrier Transport, Second Edition by : Mark Lundstrom
Download or read book Fundamentals of Carrier Transport, Second Edition written by Mark Lundstrom and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Transport Phenomena Fundamentals, Second Edition by : Joel L. Plawsky
Download or read book Transport Phenomena Fundamentals, Second Edition written by Joel L. Plawsky and published by CRC Press. This book was released on 2009-09-24 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although the practice of chemical engineering has broadened to encompass problems in a range of disciplines, including biology, biochemistry, and nanotechnology, one of the curriculum’s foundations is built upon the subject of transport phenomena. Transport Phenomena Fundamentals, Second Edition provides a unified treatment of heat, mass, and momentum transport based on a balance equation approach. Designed for a two-term course Used in a two-term transport phenomena sequence at Rensselaer Polytechnic Institute, this text streamlines the approach to how the subject is taught. The first part of the book takes students through the balance equation in the context of diffusive transport, be it momentum, energy, mass, or charge. Each chapter adds a term to the balance equation, highlighting the effects of that addition on the physical behavior of the system and the underlying mathematical description. The second half of the book builds upon the balance equation description of diffusive transport by introducing convective transport terms, focusing on partial rather than ordinary differential equations. The Navier–Stokes and convective transport equations are derived from balance equations in both macroscopic and microscopic forms. Includes examples and problems drawn from Comsol® software The second edition of this text is now enhanced by the use of finite element methods in the form of examples and extended homework problems. A series of example modules are associated with each chapter of the text. Some of the modules are used to produce examples in the text, and some are discussed in the homework at the end of each chapter. All of the modules are located online at an accompanying website which is designed to be a living component of the course. (available on the download tab)
Book Synopsis Transport Equations for Semiconductors by : Ansgar Jüngel
Download or read book Transport Equations for Semiconductors written by Ansgar Jüngel and published by Springer. This book was released on 2009-04-20 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts.
Book Synopsis Introduction to Simulations of Semiconductor Lasers by : Marek Wartak
Download or read book Introduction to Simulations of Semiconductor Lasers written by Marek Wartak and published by CRC Press. This book was released on 2024-03-21 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Simulations play an increasingly important role not only in scientific research but also in engineering developments. Introduction to Simulations of Semiconductor Lasers introduces senior undergraduates to the design of semiconductor lasers and their simulations. The book begins with explaining the physics and fundamental characteristics behind semiconductor lasers and their applications. It presumes little prior knowledge, such that only a familiarity with the basics of electromagnetism and quantum mechanics is required. The book transitions from textbook explanations, equations, and formulas to ready-to-run numeric codes that enable the visualization of concepts and simulation studies. Multiple chapters are supported by MATLAB code which can be accessed by the students. These are ready-to-run, but they can be modified to simulate other structures if desired. Providing a unified treatment of the fundamental principles and physics of semiconductors and semiconductor lasers, Introduction to Simulations of Semiconductor Lasers is an accessible, practical guide for advanced undergraduate students of Physics, particularly for courses in laser physics. Key Features: A unified treatment of fundamental principles Explanations of the fundamental physics of semiconductor Explanations of the operation of semiconductor lasers An historical overview of the subject
Book Synopsis Future Trends in Microelectronics by : Serge Luryi
Download or read book Future Trends in Microelectronics written by Serge Luryi and published by John Wiley & Sons. This book was released on 2013-06-13 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Leaders in the field predict the future of the microelectronics industry This seventh volume of Future Trends in Microelectronics summarizes and synthesizes the latest high-level scientific discussions to emerge from the Future Trends in Microelectronics international workshop, which has occurred every three years since 1995. It covers the full scope of cutting-edge topics in microelectronics, from new physical principles (quantum computing, correlated electrons), to new materials (piezoelectric nanostructures, terahertz plasmas), to emerging device technologies (embedded magnetic memories, spin lasers, and biocompatible microelectronics). An ideal book for microelectronics professionals and students alike, this volume of Future Trends in Microelectronics: Identifies the direction in which microelectronics is headed, enabling readers to move forward with research in an informed, efficient, and profitable manner Includes twenty-nine contributor chapters by international authorities from leading universities, major semiconductor companies, and government laboratories Provides a unified, cohesive exploration of various trends in microelectronics, looking to future opportunities, rather than past successes
Book Synopsis The Physics of Solar Cells by : Juan Bisquert
Download or read book The Physics of Solar Cells written by Juan Bisquert and published by CRC Press. This book was released on 2017-11-15 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides an explanation of the operation of photovoltaic devices from a broad perspective that embraces a variety of materials concepts, from nanostructured and highly disordered organic materials, to highly efficient devices such as the lead halide perovskite solar cells. The book establishes from the beginning a simple but very rich model of a solar cell, in order to develop and understand step by step the photovoltaic operation according to fundamental physical properties and constraints. It emphasizes the aspects pertaining to the functioning of a solar cell and the determination of limiting efficiencies of energy conversion. The final chapters of the book establish a more refined and realistic treatment of the many factors that determine the actual performance of experimental devices: transport gradients, interfacial recombination, optical losses and so forth. The book finishes with a short review of additional important aspects of solar energy conversion, such as the photonic aspects of spectral modification, and the direct conversion of solar photons to chemical fuel via electrochemical reactions.
Book Synopsis Nanowire Field Effect Transistors: Principles and Applications by : Dae Mann Kim
Download or read book Nanowire Field Effect Transistors: Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Book Synopsis Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices by : Benjamin Iniguez
Download or read book Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices written by Benjamin Iniguez and published by World Scientific. This book was released on 2014-01-10 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.
Book Synopsis Nuclear Electronics with Quantum Cryogenic Detectors by : Vladimir Polushkin
Download or read book Nuclear Electronics with Quantum Cryogenic Detectors written by Vladimir Polushkin and published by John Wiley & Sons. This book was released on 2022-08-02 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: NUCLEAR ELECTRONICS WITH QUANTUM CRYOGENIC DETECTORS An ideal, comprehensive reference on quantum cryogenic detector instrumentation for the semiconductor and nuclear electronics industries Quantum nuclear electronics is an important scientific and technological field that overviews the development of the most advanced analytical instrumentation. This instrumentation covers a broad range of applications such as astrophysics, fundamental nuclear research facilities, chemical nano-spectroscopy laboratories, remote sensing, security systems, forensic investigations, and more. In the years since the first edition of this popular resource, the discipline has developed from demonstrating the unprecedented energy resolving power of individual devices to building large frame cameras with hundreds of thousands of pixel arrays capable of measuring and processing massive information flow. Building upon its first edition, the second edition of Nuclear Electronics with Quantum Cryogenic Detectors reflects the latest advances by focusing on novel microwave kinetic inductance detection devices (MKIDs), the microwave superconducting quantum interferometers (MSQUIDs) extending by orders of magnitude the scalability of cryogenic detectors implementing newly developed multiplexing techniques and decoding algorithms. More, it reflects on the interaction of quantum cryogenic detectors—which in turn can be paired with semiconductor large frame cameras to provide a broad picture of a sky or chemical sample—and quantum devices, making this second edition of Nuclear Electronics a one-stop reference for the combined technologies. The book also provides an overview of latest developments in front-end electronics, signal processing channels, and cryogenics—all components of quantum spectroscopic systems—and provides guidance on the design and applications of the future quantum cryogenic ultra-high-resolution spectrometers. Nuclear Electronics with Quantum Cryogenic Detectors readers will also find: Fully revised material from the first edition relating to cryogenic requirements Brand new chapters on semiconductor radiation sensors, cooling and magnetic shielding for cryogenic detector systems; front-end readout electronic circuits for quantum cryogenic detectors; energy resolution of quantum cryogenic spectrometers; and applications of spectrometers based on cryogenic detectors A number of brand-new chapters dedicated to applications using MSQUID multiplexing technique, an area that will dominate the cryogenic detector field in the next decades Nuclear Electronics with Quantum Cryogenic Detectors provides a comprehensive overview of the entire discipline for researchers, industrial engineers, and graduate students involved in the development of high-precision nuclear measurements, nuclear analytical instrumentation, and advanced superconductor primary sensors. It is also a helpful resource for electrical and electronic engineers and physicists in the nuclear industry, as well as specialist researchers or professionals working in cryogenics applications like biomagnetism, quantum computing, gravitation measurement, and more.
Download or read book Thermoelectrics written by HoSung Lee and published by John Wiley & Sons. This book was released on 2016-09-07 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermoelectrics: Design and Materials HoSung Lee, Western Michigan University, USA A comprehensive guide to the basic principles of thermoelectrics Thermoelectrics plays an important role in energy conversion and electronic temperature control. The book comprehensively covers the basic physical principles of thermoelectrics as well as recent developments and design strategies of materials and devices. The book is divided into two sections: the first section is concerned with design and begins with an introduction to the fast developing and multidisciplinary field of thermoelectrics. This section also covers thermoelectric generators and coolers (refrigerators) before examining optimal design with dimensional analysis. A number of applications are considered, including solar thermoelectric generators, thermoelectric air conditioners and refrigerators, thermoelectric coolers for electronic devices, thermoelectric compact heat exchangers, and biomedical thermoelectric energy harvesting systems. The second section focuses on materials, and covers the physics of electrons and phonons, theoretical modeling of thermoelectric transport properties, thermoelectric materials, and nanostructures. Key features: Provides an introduction to a fast developing and interdisciplinary field. Includes detailed, fundamental theories. Offers a platform for advanced study. Thermoelectrics: Design and Materials is a comprehensive reference ideal for engineering students, as well as researchers and practitioners working in thermodynamics. Cover designed by Yujin Lee
Book Synopsis Optoelectronics of Molecules and Polymers by : André Moliton
Download or read book Optoelectronics of Molecules and Polymers written by André Moliton and published by Springer. This book was released on 2010-05-30 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic devices are currently being developed at an extraordinary rate. Organic light-emitting diodes, photovoltaic devices and electro-optical modulators are pivotal to the future of displays, photosensors and solar cells, and communication technologies. This book details the theories underlying the mechanisms involved in the relevant organic materials and covers, at a basic level, how the organic components are made. The first part of the book introduces the fundamental theories used to describe ordered solids and goes onto detail on concepts applicable to localised energy levels. Then the methods used to determine energy levels particular to perfectly ordered molecular and macromolecular systems are discussed along with a detailed consideration of the effects of quasi-particles. The function of excitons and their transfer between two molecules is studied and, in addition, the problems associated with interfaces and charge injection into resistive media are presented. More technological aspects are covered in the second part, which details the actual methods used to fabricate devices based on organic materials, such as dry etching. The principal characterisation techniques are also highlighted. Specific attention is paid to visual displays using organic light-emitting diodes; the conversion of photons into electrical energy (the photovoltaic effect); and for communications and information technologies, the electro-optical modulation of signals.
Book Synopsis Charge-Based MOS Transistor Modeling by : Christian C. Enz
Download or read book Charge-Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Book Synopsis Planar Double-Gate Transistor by : Amara Amara
Download or read book Planar Double-Gate Transistor written by Amara Amara and published by Springer Science & Business Media. This book was released on 2009-01-16 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.
Book Synopsis Introductory Quantum Mechanics for Applied Nanotechnology by : Dae Mann Kim
Download or read book Introductory Quantum Mechanics for Applied Nanotechnology written by Dae Mann Kim and published by John Wiley & Sons. This book was released on 2016-05-04 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: This introductory textbook covers fundamental quantum mechanics from an application perspective, considering optoelectronic devices, biological sensors and molecular imagers as well as solar cells and field effect transistors. The book provides a brief review of classical and statistical mechanics and electromagnetism, and then turns to the quantum treatment of atoms, molecules, and chemical bonds. Aiming at senior undergraduate and graduate students in nanotechnology related areas like physics, materials science, and engineering, the book could be used at schools that offer interdisciplinary but focused training for future workers in the semiconductor industry and for the increasing number of related nanotechnology firms, and even practicing people could use it when they need to learn related concepts. The author is Professor Dae Mann Kim from the Korea Institute for Advanced Study who has been teaching Quantum Mechanics to engineering, material science and physics students for over 25 years in USA and Asia.
Download or read book Drug Delivery written by Anya M Hillery and published by CRC Press. This book was released on 2016-09-15 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive introduction to advanced drug delivery and targeting, covering their principles, current applications, and potential future developments. This edition has been updated to reflect significant trends and cutting-edge advances that have occurred since the first edition was published. All the original chapters have been retained, but the material therein has been updated. Eight new chapters have been added that deal with entirely new technologies and approaches. Features: Offers a comprehensive introduction to the fundamental concepts and underlying scientific principles of drug delivery and targeting Presents an in-depth analysis of the opportunities and obstacles afforded by the application of nanotechnologies for drug delivery and targeting Includes a revised and expanded section on the major epithelial routes of drug delivery currently under investigation Describes the most recent, emerging, and innovative technologies of drug delivery Provides real-life examples of the clinical translation of drug delivery technologies through the use of case studies Discusses the pertinent regulatory hurdles and safety issues of drug delivery and targeting systems—crucial considerations in order to achieve licensing approval for these new technologies
Book Synopsis Nanoscale Transistors by : Mark Lundstrom
Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
