Fabrication Characterization And Simulation Of Gallium Nitride Heterojunction Field Effect Transistors

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Fabrication, Characterization, and Simulation of Gallium-Nitride Heterojunction Field-Effect Transistors

Author : Joseph Record
Publisher :
ISBN 13 :
Total Pages : 96 pages
Book Rating : 4.:/5 (111 download)

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Book Synopsis Fabrication, Characterization, and Simulation of Gallium-Nitride Heterojunction Field-Effect Transistors by : Joseph Record

Download or read book Fabrication, Characterization, and Simulation of Gallium-Nitride Heterojunction Field-Effect Transistors written by Joseph Record and published by . This book was released on 2016 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the fabrication, characterization, and off-state gate leakage simulation of Al x Ga 1−x N/GaN Heterojunction Field-Effect Transistors (HFETs). GaN HFETs are promising devices for high power, high frequency applications such as microwave amplifiers. This is due to the numerous benefits of the GaN material system including high electron mobility, breakdown field, saturation velocity, and thermal conductivity. This thesis is broken down into two major components. The first and most significant covers the fabrication and characterization of Al x Ga 1−x N/GaN HFETs. Devices were fabricated at McGill University’s Nanotools Microfabrication laboratory using a custom designed process flow. This process flow builds on previous work and presents Ohmic contact results of Ti/Al/Ti/Au and Ti/Al/Ti/Al/Ti/Au metalizations. A complete description of the process flow is provided including technology characterization results, such as mesa height profiling, where applicable. Electrical characterization of fabricated devices is performed. Results show an average contact resistance across temperature of 3.39Ωmm for the Ti/Al/Ti/Au metalization and 3.22Ωmm for the Ti/Al/Ti/Al/Ti/Au metalization. Full contact resistance results are provided over a wide range of temperature. The Ti-Al multi-layer metalization also outperforms the Ti/Al/Ti/Au metalization in terms of drain current density ( 0.12A/mm vs. 0.09A/mm ) and transconductance ( 60mS/mm vs. 40mS/mm ). Off-state gate leakage and current-voltage profiling are also carried out. The second part of this thesis concerns gate leakage current in Al x Ga 1−x N/GaN HFETs. A new off-state gate leakage model is presented to determine the variation in leakage mechanisms with the change in barrier layer aluminum mole fraction. A new metric of turning point is introduced to show where Fowler-Nordheim tunneling becomes the dominant leakage mechanism. Results show that as Al mole fraction is increased, the turning point becomes more negative and total gate leakage increases. Finally, improvements to the fabrication process and simulations are presented.

Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance

Author : Robert F Davis
Publisher : World Scientific
ISBN 13 : 9814482692
Total Pages : 295 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance by : Robert F Davis

Download or read book Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

GaN Heterojunction FET Device Fabrication, Characterization and Modeling

Author : Qian Fan
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (613 download)

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Book Synopsis GaN Heterojunction FET Device Fabrication, Characterization and Modeling by : Qian Fan

Download or read book GaN Heterojunction FET Device Fabrication, Characterization and Modeling written by Qian Fan and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation is focused on the research efforts to develop the growth, processing, and modeling technologies for GaN-based Heterojunction Field Effect Transistors (HFETs). The interest in investigating GaN HFETs is motivated by the advantageous material properties of nitride semiconductor such as large band gap, large breakdown voltage, and high saturation velocity, which make it very promising for the high power and microwave applications. Although enormous progress has been made on GaN transistors in the past decades, the technologies for nitride transistors are still not mature, especially concerning the reliability and stability of the device. In order to improve the device performance, we first optimized the growth and fabrication procedures for the conventional AlGaN barrier HFET, on which high carrier mobility and sheet density were achieved. Second, the AlInN barrier HFET was successfully processed, with which we obtained improved I-V characteristics compared with conventional structure. The lattice-matched AlInN barrier is beneficial in the removal of strain, which leads to better carrier transport characteristics. Furthermore, new device structures have been examined, including recess-gate HFET with n+ GaN cap layer and gate-on-insulator HFET, among which the insertion of gate dielectrics helps to leverage both DC and microwave performances. In order to depict the microwave behavior of the HFET, small signal modeling approaches were used to extract the extrinsic and intrinsic parameters of the device. An 18-element equivalent circuit model for GaN HFET has been proposed, from which various extraction methods have been tested. Combining the advantages from the cold-FET measurements and hot-FET optimizations, a hybrid extraction method has been developed, in which the parasitic capacitances were attained from the cold pinch-off measurements while the rest of the parameters from the optimization routine. Small simulation error can be achieved by this method over various bias conditions, demonstrating its capability for the circuit level design applications for GaN HFET. Device physics modeling, on the other hand, can help us to reveal the underlying physics for the device to operate. With the development of quantum drift-diffusion modeling, the self-consistent solution to the Schrödinger-Poisson equations and carrier transport equations were fulfilled. Lots of useful information such as band diagram, potential profile, and carrier distribution can be retrieved. The calculated results were validated with experiments, especially on the AlInN layer structures after considering the influence from the parasitic Ga-rich layer on top of the spacer. Two dimensional cross-section simulation shows that the peak of electrical field locates at the gate edge towards the drain, and of different kinds of structures the device with gate field-plate was found to efficiently reduce the possibility of breakdown failure.

Organic Field Effect Transistors

Author : Ioannis Kymissis
Publisher : Springer Science & Business Media
ISBN 13 : 0387921346
Total Pages : 156 pages
Book Rating : 4.3/5 (879 download)

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Book Synopsis Organic Field Effect Transistors by : Ioannis Kymissis

Download or read book Organic Field Effect Transistors written by Ioannis Kymissis and published by Springer Science & Business Media. This book was released on 2008-12-25 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.

Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation

Author : Rico Hentschel
Publisher : BoD – Books on Demand
ISBN 13 : 3752641762
Total Pages : 156 pages
Book Rating : 4.7/5 (526 download)

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Book Synopsis Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation by : Rico Hentschel

Download or read book Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation written by Rico Hentschel and published by BoD – Books on Demand. This book was released on 2021-01-03 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode. Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination. The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This value is comparable to device with additional overgrowth of the channel. Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.

Fabrication and Characterization of Gallium Nitride-based Gateless Field-effect -transistor for Liquid Sensing

Author : Soo Jeat Wang
Publisher :
ISBN 13 :
Total Pages : 32 pages
Book Rating : 4.:/5 (96 download)

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Book Synopsis Fabrication and Characterization of Gallium Nitride-based Gateless Field-effect -transistor for Liquid Sensing by : Soo Jeat Wang

Download or read book Fabrication and Characterization of Gallium Nitride-based Gateless Field-effect -transistor for Liquid Sensing written by Soo Jeat Wang and published by . This book was released on 2010 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN Transistor Modeling for RF and Power Electronics

Author : Yogesh Singh Chauhan
Publisher : Elsevier
ISBN 13 : 0323999409
Total Pages : 262 pages
Book Rating : 4.3/5 (239 download)

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Book Synopsis GaN Transistor Modeling for RF and Power Electronics by : Yogesh Singh Chauhan

Download or read book GaN Transistor Modeling for RF and Power Electronics written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-05-31 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. This book provides an overview of the operation and physics of GaN-based transistors All aspects of the ASM-HEMT model for GaN circuits, an industry standard model, are described in depth by the developers of the model Parameter extraction of GaN devices and measurement data requirements for GaN model extraction are detailed

Nitride Semiconductor Devices

Author : Joachim Piprek
Publisher : John Wiley & Sons
ISBN 13 : 3527406670
Total Pages : 521 pages
Book Rating : 4.5/5 (274 download)

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Book Synopsis Nitride Semiconductor Devices by : Joachim Piprek

Download or read book Nitride Semiconductor Devices written by Joachim Piprek and published by John Wiley & Sons. This book was released on 2007-04-09 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.

Nanoelectronic Devices and Applications

Author : Trupti Ranjan Lenka
Publisher : Bentham Science Publishers
ISBN 13 : 9815238256
Total Pages : 358 pages
Book Rating : 4.8/5 (152 download)

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Book Synopsis Nanoelectronic Devices and Applications by : Trupti Ranjan Lenka

Download or read book Nanoelectronic Devices and Applications written by Trupti Ranjan Lenka and published by Bentham Science Publishers. This book was released on 2024-07-02 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.

Gallium Nitride (GaN)

Author : Farid Medjdoub
Publisher : CRC Press
ISBN 13 : 1482220040
Total Pages : 372 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub

Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Gallium Nitride Electronics

Author : Rüdiger Quay
Publisher : Springer Science & Business Media
ISBN 13 : 3540718923
Total Pages : 492 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Gallium Nitride Electronics by : Rüdiger Quay

Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Fabrication, Characterization, and Modeling of AlGaN/GaN High Electron Mobility Transistors

Author : Ekaterina Harvard
Publisher :
ISBN 13 :
Total Pages : 230 pages
Book Rating : 4.:/5 (913 download)

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Book Synopsis Fabrication, Characterization, and Modeling of AlGaN/GaN High Electron Mobility Transistors by : Ekaterina Harvard

Download or read book Fabrication, Characterization, and Modeling of AlGaN/GaN High Electron Mobility Transistors written by Ekaterina Harvard and published by . This book was released on 2013 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In recent years, however, the focus has shifted to the promise of ever higher power at ever higher frequency with the emergence of wide bandgap group III-V semiconductors, including Gallium Nitride. One area receiving attention is that of novel passivation materials for the active areas of AlGaN/GaN devices. Passivation is a critical issue because surface trapping effects are essentially unavoidable, even with the highest queality epitaxial layers, due to the polarized nature of the material. The question then becomes, which passivation materials offer the best mitigation of surface trapping effects with the least impact on parasitic elements detrimental to device performance. In this work, AlGaN/GaN devices passivated with AlSiN for both high frequency and high power operation are studied. The high frequency devices were fabricated alongside devices passivated with SiN, a standard passivation material, and characterized for both small signal and large signal performance. The AlSiN passivation was found to enhance both small and large signal performance, and so another set of devices was fabricated with high voltage, high power switching as the intended application. These devices were characterized for off-state breakdown, which was more than 4 times that of typical SiN-passivated devices, and time-domain and loadline measurements were performed.

Fabrication and Characterization of Gallium Nitride High Electron Mobility Transistors

Author : Wendi Zhou
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (87 download)

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Book Synopsis Fabrication and Characterization of Gallium Nitride High Electron Mobility Transistors by : Wendi Zhou

Download or read book Fabrication and Characterization of Gallium Nitride High Electron Mobility Transistors written by Wendi Zhou and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "Compound semiconductor gallium nitride high electron mobility transistors (HEMTs) have significant potential for use in the electronics industry, including radar applications and microwave transmitters for communications. These wide band gap semiconductors have unique material properties that lead to devices with high power, efficiency, and bandwidth compared with existing technologies. In this work, the electrical properties of gallium nitride HEMTs on silicon substrates were studied in the context of drain characteristics and breakdown voltage. The design, fabrication, and characterization of different devices are presented, in addition to a discussion on the effects of annealing and different gate contact materials. While demonstrating considerable promise in the field of high power radio frequency (RF) applications, this technology is yet immature and several fabrication issues still need to be addressed. The goal of this work is to represent a stepping stone in further developing this technology to be used in high power devices." --

Modeling and Characterization of Gallium Nitride Based Metal-oxide-semiconductor Heterostructure Field-effect Transistors for RF Power Amplifiers

Download Modeling and Characterization of Gallium Nitride Based Metal-oxide-semiconductor Heterostructure Field-effect Transistors for RF Power Amplifiers PDF Online Free

Author : Jie Deng
Publisher :
ISBN 13 : 9781109389616
Total Pages : 125 pages
Book Rating : 4.3/5 (896 download)

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Book Synopsis Modeling and Characterization of Gallium Nitride Based Metal-oxide-semiconductor Heterostructure Field-effect Transistors for RF Power Amplifiers by : Jie Deng

Download or read book Modeling and Characterization of Gallium Nitride Based Metal-oxide-semiconductor Heterostructure Field-effect Transistors for RF Power Amplifiers written by Jie Deng and published by . This book was released on 2009 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: The mobility of the 2DEG channel in GaN MOSHFETs is also studied in comparison with HFETs. Significant mobility enhancement is seen in the MOSHFET under pulsed condition and at low temperatures, which can be attributed to donor-like surface states. The mobility enhancement helps compensate for the lower electron density of the MOSHFET, providing transconductance comparable to but more linear than that of the HFET. This implies that the MOSHFET can deliver both performance and reliability advantage over HFET.

Design, Fabrication and Characterization of Gallium Nitride High-electron-mobility Transistors

Author : Jonathan George Felbinger
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (671 download)

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Book Synopsis Design, Fabrication and Characterization of Gallium Nitride High-electron-mobility Transistors by : Jonathan George Felbinger

Download or read book Design, Fabrication and Characterization of Gallium Nitride High-electron-mobility Transistors written by Jonathan George Felbinger and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past few years, systems based on gallium nitride high-electron-mobility transistors (GaN HEMTs) have increasingly penetrated the markets for cellular telephone base stations, RADAR, and satellite communications. High power (several W/mm), continuous-wave (CW) operation of microwave HEMTs dissipates heat; as the device increases in temperature, its electron mobility drops and performance degrades. To enhance high-power performance and enable operation in high ambient temperature environments, the AlxGa1[-]xN/GaN epitaxial layers are attached to polycrystalline diamond substrates. e lower surface temperature rise on GaN-on- diamond is directly measured; subsequently, improved electrical performance is demonstrated on diamond versus the native (Si) substrates. Benchmark AlxGa1[-]xN/GaN devices are fabricated on SiC for comparison to diamond, Si, and bulk GaN substrates; the merits and performance of each is compared. In collaboration with Group4 Labs, X-band amplifier modules based on GaN-on-diamond HEMTs have been demonstrated for the first time. Recent efforts have focused on substituting AlxIn1[-]xN barriers in place of AlxGa1[-]xN to achieve higher output power at microwave frequencies and addressing the challenges of this new material system. Ultimately, these techniques may be combined to attain the utmost in device performance.

Processing and Characterization of Advanced AlGaN/GaN Heterojunction Effect Transistors

Author : Jaesun Lee
Publisher :
ISBN 13 :
Total Pages : 176 pages
Book Rating : 4.:/5 (848 download)

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Book Synopsis Processing and Characterization of Advanced AlGaN/GaN Heterojunction Effect Transistors by : Jaesun Lee

Download or read book Processing and Characterization of Advanced AlGaN/GaN Heterojunction Effect Transistors written by Jaesun Lee and published by . This book was released on 2006 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) have demonstrated high current levels, high breakdown voltages, and high frequency power performance due to its unique material properties. The further improvements of AlGaN/GaN HEMTs rely on the improvement of material quality and further reduction of parasitic resistance. The purpose of this study is to fabricate and characterize AlGaN/GaN HEMTs for high frequency and high power applications. The first focus of this research is to investigate the post-gate annealing effect on the direct current and radio frequency device performances. Post-gate annealing of AlGaN/GaN turns out to be one of the simple and effective techniques to improve breakdown voltage and power performance of devices dramatically. Especially, after post-annealing at 400 0C for 10 minutes, the maximum drain current at a gate bias of 1 V increases from 823 mA/mm to 956 mA/mm. The transconductance of the devices was improved from 223 mS/mm to 233 mS/mm. The breakdown voltages of the devices were enhanced remarkably from 25 V to 187 V. The threshold voltage exhibited a negative shift. The values fT and fMAX increase from 24 GHz and 80 GHz to 55 GHz and 150 GHz, respectively. The output power and associated gain at 10 GHz are improved from 16.4 dBm and 11.4 dB to 25.9 dBm and 19 dB, respectively. The power added efficiency (PAE) is improved from 29.4 to 52.5 %. The second focus is to develop self-aligned AlGaN/GaN HEMTs, which are very attractive because of the minimized source access resistance. However, the thick metal scheme and high processing temperature of ohmic contacts on III-nitrides hinder the realization of self-aligned devices. In this study, self-aligned AlGaN/GaN high electron mobility transistors are fabricated and characterized with the thin metal schemes of Ti/Al/Ti/Au and Mo/Al/Mo/Au for gate to source and drain self-alignment. Thin Mo/Al/Mo/Au metal layer show good ohmic contact behavior even after annealed for 5 minutes at 600 0C in a furnace while thin ohmic metal scheme of Ti/Al/Ti/Au does not produce ohmic contact even after annealed at 750 0C for 30 minutes. The third focus is to develop the enhancement mode AlGaN/GaN HEMTs. Quasi-enhancement mode AlGaN/GaN HEMT devices with 1-um gate length are fabricated. These quasi-enhancement mode devices exhibit the threshold voltage of as low as - 0.3 V, a gm of 140 mS/mm, an fT of 4.3 GHz, and an fMAX of 13.3 GHz, respectively. Further improvement of enhancement-mode GaN-based HEMT devices is desired for applications of complementary integrated circuits.

Design, Simulation and Construction of Field Effect Transistors

Author : Dhanasekaran Vikraman
Publisher : BoD – Books on Demand
ISBN 13 : 1789234166
Total Pages : 168 pages
Book Rating : 4.7/5 (892 download)

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Book Synopsis Design, Simulation and Construction of Field Effect Transistors by : Dhanasekaran Vikraman

Download or read book Design, Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.