Author : Kaushal D. Patel
Publisher :
ISBN 13 :
Total Pages : 69 pages
Book Rating : 4.:/5 (119 download)
Book Synopsis Fabrication and Characterization of Silicon Carbide (SiC) MESFET by : Kaushal D. Patel
Download or read book Fabrication and Characterization of Silicon Carbide (SiC) MESFET written by Kaushal D. Patel and published by . This book was released on 2017 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: This research work is dealt with the fabrication of the optically triggered silicon carbide MESFET. The fabrication of the silicon carbide MESFET device has been chronologically described to study the device structure, process development, and material properties. In order to understand the fabrication process, the optimization of photo-resist processing, ion implanted doping process, chemical etching process, silicon oxide growth on SiC material, stoichiometry silicon oxide with SiC material and comparative study of silicon oxide growth for silicon and carbon faces of SiC, nickel and indium tin oxide materials deposition for ohmic and Schottky contacts have been studied to optimize the unit steps of fabrication process. A detailed study on ion implantation, high-temperature annealing, and electrical device isolation has been performed. Different failure analyses for wafer and device level have been conducted to monitor the device performance, fabrication processing and material properties. I-V characteristics of fabricated SiC MESFET device has been measured by the curve tracer and compared with other fabricated GaN MESFE device.