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Author : Seyoung Kim
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (262 download)
Download or read book Fabrication and Characterization of Graphene Field-effect Transistors with High-K Dielectrics written by Seyoung Kim and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Inanc Meric
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (867 download)
Download or read book Characterization of Graphene Field-Effect Transistors for High Performance Electronics written by Inanc Meric and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistors RF performance and bias dependence of high frequency behavior is explored. Novel fabrications methods are developed to improve FET performance. A technique is developed to grow metal-oxides on graphene surface for efficient gate coupling. An alternative approach to making high quality devices is realized by incorporating hexagonal-boron nitride as a gate dielectric. These transistors exhibit the potential of graphene electronics for high-performance analog electronic applications.
Author : Sk. Fahad Chowdhury
Publisher :
ISBN 13 :
Total Pages : 178 pages
Book Rating : 4.:/5 (986 download)
Download or read book Design, Fabrication and Characterization of Field-effect Transistors Based on Two-dimensional Materials and Their Circuit Applications written by Sk. Fahad Chowdhury and published by . This book was released on 2015 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of two-dimensional layered materials has witnessed extensive research activities during the past decade, which commenced with the seminal work of isolating graphene from bulk graphite. In addition to providing a rich playground for scientific experiments, graphene has soon become a material of technological interest for many of its fascinating electrical, thermal, mechanical and optical properties. The controllability of carrier density with electric field in graphene, along with very high carrier mobility and saturation velocity, has motivated the use of graphene channel in field-effect devices. Also, the two-dimensional layered materials family has grown very rapidly with the application of the graphene exfoliation technique and many of these elemental and compound materials are considered useful for transistor applications. In this work, various aspects of the use of two-dimensional layered materials for transistor applications were analyzed. Starting with material synthesis, field-effect transistors (FETs) were designed, fabricated and tested for their DC and high frequency performances. Through the detailed electrical and spectroscopic investigations of several processing techniques for enhanced FET performance, numerous insights were obtained into the FET operation and performance bottlenecks. The reduction of charged impurity scattering in graphene FET by Hexamethyldisilazane interaction improved field-effect mobility and reduced residual carrier concentration. This technique was also shown to be promising for other two-dimensional materials based FET. A useful technique for reducing the thickness of black phosphorus flake with oxygen plasma etching was developed. Both back-gated and top-gated FETs were implemented with good performances. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy revealed vital structural information about layered black phosphorus. Lastly, these exotic materials based FETs were characterized for their high frequency performance, resulting in gigahertz range transit frequency and operated in a variety of important circuit configurations such as frequency multiplier, amplifier, mixer and AM demodulator.
Author : Zia Karim
Publisher : The Electrochemical Society
ISBN 13 : 1566778646
Total Pages : 546 pages
Book Rating : 4.5/5 (667 download)
Download or read book Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 written by Zia Karim and published by The Electrochemical Society. This book was released on 2011-04-25 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.
Author : Omar Azzaroni
Publisher : John Wiley & Sons
ISBN 13 : 3527843388
Total Pages : 453 pages
Book Rating : 4.5/5 (278 download)
Download or read book Graphene Field-Effect Transistors written by Omar Azzaroni and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 453 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene Field-Effect Transistors In-depth resource on making and using graphene field effect transistors for point-of-care diagnostic devices Graphene Field-Effect Transistors focuses on the design, fabrication, characterization, and applications of graphene field effect transistors, summarizing the state-of-the-art in the field and putting forward new ideas regarding future research directions and potential applications. After a review of the unique electronic properties of graphene and the production of graphene and graphene oxide, the main part of the book is devoted to the fabrication of graphene field effect transistors and their sensing applications. Graphene Field-Effect Transistors includes information on: Electronic properties of graphene, production of graphene oxide and reduced graphene oxide, and graphene functionalization Fundamentals and fabrication of graphene field effect transistors, and nanomaterial/graphene nanostructure-based field-effect transistors Graphene field-effect transistors integrated with microfluidic platforms and flexible graphene field-effect transistors Graphene field-effect transistors for diagnostics applications, and DNA biosensors and immunosensors based on graphene field-effect transistors Graphene field-effect transistors for targeting cancer molecules, brain activity recording, bacterial detection, and detection of smell and taste Providing both fundamentals of the technology and an in-depth overview of using graphene field effect transistors for fabricating bioelectronic devices that can be applied for point-of-care diagnostics, Graphene Field-Effect Transistors is an essential reference for materials scientists, engineering scientists, laboratory medics, and biotechnologists.
Author : Lin Gong
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (119 download)
Download or read book Fabrication and Characterization of Organic Field-Effect Transistors with Modified Gate Dielectrics and Application for Organic Nonvolatile Memory Cells written by Lin Gong and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Daniel Andrew Nezich
Publisher :
ISBN 13 :
Total Pages : 256 pages
Book Rating : 4.:/5 (713 download)
Download or read book Fabrication and Electrical Characterization of Transistors Made from Carbon Nanotubes and Graphene written by Daniel Andrew Nezich and published by . This book was released on 2010 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon nanotubes and graphene are low-dimensional allotropes of carbon which exhibit novel mechanical and electrical properties. The methods for producing these materials and fabricating electronic devices from them are still under development. This thesis uses the fabrication and electronic analysis of field-effect transistors made from carbon nanotubes and graphene to gain insights into the growth process of these materials, to understand complications of the fabrication process, and to assess the quality of the materials through their electronic properties. The numbers of semoconducting and metallic nanotubes produced by growth using two different catalysts are counted by the process of electrical cutting. Various highcurrent phenomena are observed and explained through use of multi-nanotube and charge leakage models. The high-current annealing method discovered for nanotubes is found to also be useful for improving the quality of graphene devices. The graphene used for device fabrication is produced by thermal chemical vapor deposition on thin film nickel. The large area and weak adhesion of this material leads to the alteration of device designs and fabrication procedures, including substrate exposure and high-temperature annealing. A new nanofluidic device is introduced to study the enhanced lateral wet etching rate of materials in contact with graphene. Two sets of graphene field-effect transistors are analyzed, a first for this type of material. Improved material quality results in improved electrical mobility. Two independent models are derived which relate the thickness of a graphene film to its gate-voltage dependent behaviour, and are justified by experiment. Temperature dependence, quantum capacitance, and multiterminal measurements are discussed.
Author : Xiao Sun
Publisher :
ISBN 13 :
Total Pages : 332 pages
Book Rating : 4.:/5 (913 download)
Download or read book Characterization and Fabrication of High K Dielectric-high Mobility Channel Transistors written by Xiao Sun and published by . This book was released on 2013 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dhanasekaran Vikraman
Publisher : BoD – Books on Demand
ISBN 13 : 1789234166
Total Pages : 168 pages
Book Rating : 4.7/5 (892 download)
Download or read book Design, Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Author : Marlene Bonmann
Publisher :
ISBN 13 : 9789179052379
Total Pages : pages
Book Rating : 4.0/5 (523 download)
Download or read book Graphene Field-effect Transistors and Devices for Advanced High-frequency Applications written by Marlene Bonmann and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Eric Lee Changgai Awan
Publisher :
ISBN 13 :
Total Pages : 38 pages
Book Rating : 4.:/5 (96 download)
Download or read book Fabrication and Characterization of Graphene Field Efect Transistor on Sio2/si Substrate written by Eric Lee Changgai Awan and published by . This book was released on 2011 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Satyabrata Jit
Publisher : Elsevier
ISBN 13 : 0128176792
Total Pages : 285 pages
Book Rating : 4.1/5 (281 download)
Download or read book 2D Nanoscale Heterostructured Materials written by Satyabrata Jit and published by Elsevier. This book was released on 2020-05-09 with total page 285 pages. Available in PDF, EPUB and Kindle. Book excerpt: 2D Nanoscale Heterostructured Materials: Synthesis, Properties, and Applications assesses the current status and future prospects for 2D materials other than graphene (e.g., BN nanosheets, MoS2, NbSe2, WS2, etc.) that have already been contemplated for both low-end and high-end technological applications. The book offers an overview of the different synthesis techniques for 2D materials and their heterostructures, with a detailed explanation of the many potential future applications. It provides an informed overview and fundamentals properties related to the 2D Transition metal dichalcogenide materials and their heterostructures. The book helps researchers to understand the progress of this field and points the way to future research in this area. Explores synthesis techniques of newly evolved 2D materials and their heterostructures with controlled properties Offers detailed analysis of the fundamental properties (via various experimental process and simulations techniques) of 2D heterostructures materials Discusses the applications of 2D heterostructured materials in various high-performance devices
Author : Mohit Moitra
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (139 download)
Download or read book RF Device Characterization of Graphene Transistors written by Mohit Moitra and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Radio Frequency performance of field-effect transistors has been explored in depth, experimented and industrially in use since a long time. Whenever one thinks of transistors which could take us to the regime of more than 1 THz in frequency it would always be the High Electron Mobility Transistors (HEMTS) as the perfect solution to that. The Graphene transistors have been very much in research from 2010 and promise equal results due to their huge potential in mobility. In the Semiconductor Manufacturing And Fabrication Laboratory at the Rochester Institute Of Technology our research group has been designing, fabricating and characterizing the graphene transistors of top-gated and back- gated varieties of which the former has been more explored and characterized because of its potential in high frequency performance. In this thesis characterization of both the top-gated and the back-gated varieties will be discussed in intricate detail with different permutation and combinations in experiments in order to depict the efficiency of these transistors in terms of their frequency characteristics and the possible ways to optimize the mobility and transconductance, thereby changing the hysteresis behaviours of the top-gated transistors. The maximum oscillation frequency has been explored for the top-gated variant where it can be estimated how they are in performance and exhibit unique nature compared to that of the PMOS and the NMOS devices along with this distinctive hysteresis behaviours by application of a polymer on GFETs has been investigated."--Abstract.
Author : Kristine Bedner
Publisher :
ISBN 13 :
Total Pages : 101 pages
Book Rating : 4.:/5 (865 download)
Download or read book Fabrication and Characterization of Lon-sensitive Field-effect Transistors Using Silicon-on-insulator Technology written by Kristine Bedner and published by . This book was released on 2013 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mircea Dragoman
Publisher : Springer
ISBN 13 : 3319484370
Total Pages : 210 pages
Book Rating : 4.3/5 (194 download)
Download or read book 2D Nanoelectronics written by Mircea Dragoman and published by Springer. This book was released on 2016-12-01 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is dedicated to the new two-dimensional one-atomic-layer-thick materials such as graphene, metallic chalcogenides, silicene and other 2D materials. The book describes their main physical properties and applications in nanoelctronics, photonics, sensing and computing. A large part of the book deals with graphene and its amazing physical properties. Another important part of the book deals with semiconductor monolayers such as MoS2 with impressive applications in photonics, and electronics. Silicene and germanene are the atom-thick counterparts of silicon and germanium with impressive applications in electronics and photonics which are still unexplored. Consideration of two-dimensional electron gas devices conclude the treatment. The physics of 2DEG is explained in detail and the applications in THz and IR region are discussed. Both authors are working currently on these 2D materials developing theory and applications.
Author : Iraj Sadegh Amiri
Publisher : Springer
ISBN 13 : 9811065500
Total Pages : 92 pages
Book Rating : 4.8/5 (11 download)
Download or read book Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor written by Iraj Sadegh Amiri and published by Springer. This book was released on 2017-10-29 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.
Author : Khadija Said Rahman
Publisher :
ISBN 13 :
Total Pages : 64 pages
Book Rating : 4.:/5 (11 download)
Download or read book Fabrication and Characterization of Graphite Oxide Based Field Effect Transistors for Non Enzymatic Glucose-sensor Application written by Khadija Said Rahman and published by . This book was released on 2016 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphite-oxide based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated and used as glucose sensor. Herein, graphite-oxide was assembled between two planer electrical electrodes. The sensitivity of the sensor has been enhanced by adding copper (Cu) or silver (Ag) nanoparticles. The nanoparticles were produced by sputtering and inert gas condensation inside an ultra-high vacuum compatible system, and they were self-assembled on the graphite-oxide. The sensitivity of the sensor was increased by an order of magnitude when the silver nanoparticles were added. The sensitivity of each MOSFET was studied at different concentrations of non-enzymatic glucose for potential use in medical and industrial applications.
