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Fabrication And Analysis Of Polysilicon Contacted Emitter Bipolar Transisters
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Book Synopsis Fabrication and Analysis of Polysilicon Contacted Emitter Bipolar Transisters by : Gregory William Bakker
Download or read book Fabrication and Analysis of Polysilicon Contacted Emitter Bipolar Transisters written by Gregory William Bakker and published by . This book was released on 1984 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication of Polysilicon Contacted Emitter Bipolar Transistors by : Gerold W. Neudeck
Download or read book Fabrication of Polysilicon Contacted Emitter Bipolar Transistors written by Gerold W. Neudeck and published by . This book was released on 1989 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Polysilicon Contacted Emitter Bipolar Transistors by : Gerold W. Neudeck
Download or read book A Polysilicon Contacted Emitter Bipolar Transistors written by Gerold W. Neudeck and published by . This book was released on 1988 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication and Characterization of Bipolar Transistors with Polysilicon Emitters by : Julie Kerstin Bratvold
Download or read book Design, Fabrication and Characterization of Bipolar Transistors with Polysilicon Emitters written by Julie Kerstin Bratvold and published by . This book was released on 1990 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Realization of Bipolar Transistors by : Peter Ashburn
Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Book Synopsis The Numerical Simulation of Polysilicon-contacted Emitter Bipolar Transistors by : Susan Margaret Bradley
Download or read book The Numerical Simulation of Polysilicon-contacted Emitter Bipolar Transistors written by Susan Margaret Bradley and published by . This book was released on 1987 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Masters Theses in the Pure and Applied Sciences by : Wade H. Shafer
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Oata Analysis and Synthesis (CINOAS) * at Purdue. University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 33 (thesis year 1988) a total of 13,273 theses titles from 23 Canadian and 1 85 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 33 reports theses submitted in 1988, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Book Synopsis Ultra-Fast Silicon Bipolar Technology by : Ludwig Treitinger
Download or read book Ultra-Fast Silicon Bipolar Technology written by Ludwig Treitinger and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Book Synopsis Analysis of Small Geometry VLSI Bipolar Transistors Including Polysilicon Emitter Devices by : Abdelshafy Abdelraouf Eltoukhy
Download or read book Analysis of Small Geometry VLSI Bipolar Transistors Including Polysilicon Emitter Devices written by Abdelshafy Abdelraouf Eltoukhy and published by . This book was released on 1982 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Semiconductor Processing Technology by : Badih El-Kareh
Download or read book Fundamentals of Semiconductor Processing Technology written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 605 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.
Book Synopsis Optimization and Temperature Dependence of Current Gain in Polysilicon-emitter-contacted Bipolar Transistors by : C. Lea Williams
Download or read book Optimization and Temperature Dependence of Current Gain in Polysilicon-emitter-contacted Bipolar Transistors written by C. Lea Williams and published by . This book was released on 1988 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics of Semiconductor Devices by : Suresh C. Jain
Download or read book Physics of Semiconductor Devices written by Suresh C. Jain and published by . This book was released on 1985 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics and modeling of polysilicon emitter contacts for bipolar transistors by : Martha Johnson
Download or read book Physics and modeling of polysilicon emitter contacts for bipolar transistors written by Martha Johnson and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Polysilicon Emitter Bipolar Transistors by : K. Kapoor Ashon
Download or read book Polysilicon Emitter Bipolar Transistors written by K. Kapoor Ashon and published by . This book was released on 1983 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Characterization of Polysilicon Emitter Bipolar Transistors by : Kathleen Susan Krisch
Download or read book Design and Characterization of Polysilicon Emitter Bipolar Transistors written by Kathleen Susan Krisch and published by . This book was released on 1988 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Study of Bipolar Transistors with Polysilicon Emitters by : B. Soerowirdjo
Download or read book A Study of Bipolar Transistors with Polysilicon Emitters written by B. Soerowirdjo and published by . This book was released on 1983 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High Frequency Silicon Bipolar Transistor with SIPOS (Semi-Insulating Polycrystalline Silicon) Heterojunction Emitter and Ion Implanted Rapid Thermal Annealed Base Region by : J. J. Wortman
Download or read book High Frequency Silicon Bipolar Transistor with SIPOS (Semi-Insulating Polycrystalline Silicon) Heterojunction Emitter and Ion Implanted Rapid Thermal Annealed Base Region written by J. J. Wortman and published by . This book was released on 1985 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research program described in this report is directed toward the investigation of concepts for improved high-frequency, high-speed, silicon bipolar transistors. The research is focused in three major areas: (1) deposition and characterization of semi-insulating polycrystalline silicon (SIPOS) as a heterojunction emitter. (2) use of ion implantation and rapid thermal annealing (RTA) for forming the base of bipolar transistors, (3) investigation of other technologies such as oxide isolation and polycrystalline silicon contacts to reduce parasitic effects to improve limitations at high frequencies. The research ranges from fundamental studies of structural, chemical, electrical, and optical properties of SIPOS deposited over a wide range of compositions on various substrates to the fabrication of transistors with polycrystalline and SIPOS emitters. Much effort has also been directed toward the ion implanted base where numerous techniques for forming the shallow implant and maintaining the profile during further processes were investigated.
