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Electron Spin Resonance In Semiconductors
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Book Synopsis Electron Spin Resonance in Semiconductors by : Gordon Lancaster
Download or read book Electron Spin Resonance in Semiconductors written by Gordon Lancaster and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the study of the solid state began it has been necessary to use increasingly refined experimental techniques, of which electron spin resonance is an important example, in the effort to gain information concerning the structure and properties of an immense and varied range of solids. In the last two decades the great commercial demand for solid-state electronic devices has stimulated research into the funda mental properties of semiconductors. At the same time as semiconductor devices were becoming techno logically important, the technique of electron spin resonance was first being used on a large scale, principally at the Clarendon Laboratory, Oxford. Both solid-state physics and electron spin resonance have now reached the stage where they are useful to each other, primarily in the realm of the atomic properties of matter. Dr Lancaster's book is one of a series of monographs that aims at covering as comprehensively as possible the field of electron spin resonance. His book has been written for those who wish to know some thing about the way in which the electron spin resonance technique has been used in the study of semiconductors. It also has value for specialists who may need an authoritative work of reference, and for workers in allied subjects who wish to use this technique to further their work. Much of his treatise deals with electron spin resonance in crystals of silicon and germanium containing specific impurities, as these materials are of greatest interest. Practical results are discussed wherever possible.
Book Synopsis Electron Spin Resonance in Semiconductors by : Gordon Lancaster
Download or read book Electron Spin Resonance in Semiconductors written by Gordon Lancaster and published by Springer. This book was released on 2012-05-27 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the study of the solid state began it has been necessary to use increasingly refined experimental techniques, of which electron spin resonance is an important example, in the effort to gain information concerning the structure and properties of an immense and varied range of solids. In the last two decades the great commercial demand for solid-state electronic devices has stimulated research into the funda mental properties of semiconductors. At the same time as semiconductor devices were becoming techno logically important, the technique of electron spin resonance was first being used on a large scale, principally at the Clarendon Laboratory, Oxford. Both solid-state physics and electron spin resonance have now reached the stage where they are useful to each other, primarily in the realm of the atomic properties of matter. Dr Lancaster's book is one of a series of monographs that aims at covering as comprehensively as possible the field of electron spin resonance. His book has been written for those who wish to know some thing about the way in which the electron spin resonance technique has been used in the study of semiconductors. It also has value for specialists who may need an authoritative work of reference, and for workers in allied subjects who wish to use this technique to further their work. Much of his treatise deals with electron spin resonance in crystals of silicon and germanium containing specific impurities, as these materials are of greatest interest. Practical results are discussed wherever possible.
Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Andre Stesmans
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Andre Stesmans and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electron Paramagnetic Resonance by : S. A. Al'tshuler
Download or read book Electron Paramagnetic Resonance written by S. A. Al'tshuler and published by Academic Press. This book was released on 2013-10-22 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron Paramagnetic Resonance is a comprehensive text on the field of electron paramagnetic resonance, covering both the theoretical background and the results of experiment. This book is composed of eight chapters that cover theoretical materials and experimental data on ionic crystals, since these are the materials that have been most extensively studied by the methods of paramagnetic resonance. The opening chapters provide an introduction to the basic principles of electron paramagnetic resonance and the methods of its measurement. The next chapters are devoted to the theory of spectra and experimental studies of ionic crystals, as well as the complexity of construction of a shape theory of a paramagnetic resonance line. The remaining chapters discuss the application of electron paramagnetic resonance technique to the study of metals, semiconductors, defects in crystals, and free radicals.
Book Synopsis Magnetic Resonance of Semiconductors and Their Nanostructures by : Pavel G. Baranov
Download or read book Magnetic Resonance of Semiconductors and Their Nanostructures written by Pavel G. Baranov and published by Springer. This book was released on 2017-03-20 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains different magnetic resonance (MR) techniques and uses different combinations of these techniques to analyze defects in semiconductors and nanostructures. It also introduces novelties such as single defects MR and electron-paramagnetic-resonance-based methods: electron spin echo, electrically detected magnetic resonance, optically detected magnetic resonance and electron-nuclear double resonance – the designated tools for investigating the structural and spin properties of condensed systems, living matter, nanostructures and nanobiotechnology objects. Further, the authors address problems existing in semiconductor and nanotechnology sciences that can be resolved using MR, and discuss past, current and future applications of MR, with a focus on advances in MR methods. The book is intended for researchers in MR studies of semiconductors and nanostructures wanting a comprehensive review of what has been done in their own and related fields of study, as well as future perspectives.
Book Synopsis Spin Physics in Semiconductors by : Mikhail I. Dyakonov
Download or read book Spin Physics in Semiconductors written by Mikhail I. Dyakonov and published by Springer. This book was released on 2017-10-04 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.
Book Synopsis Semiconductor Spintronics by : Jianbai Xia
Download or read book Semiconductor Spintronics written by Jianbai Xia and published by World Scientific. This book was released on 2012 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors'' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.a
Book Synopsis Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures by : Marco Fanciulli
Download or read book Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures written by Marco Fanciulli and published by Springer Science & Business Media. This book was released on 2009-08-24 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is a discussion of the state of the art of spin resonance in low dimensional structures, such as two-dimensional electron systems, quantum wires, and quantum dots. Leading scientists report on recent advances and discuss open issues and perspectives.
Book Synopsis Electron Paramagnetic Resonance by : Marina Brustolon
Download or read book Electron Paramagnetic Resonance written by Marina Brustolon and published by John Wiley & Sons. This book was released on 2009-02-25 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a pragmatic guide to navigating through the complex maze of EPR/ESR spectroscopy fundamentals, techniques, and applications. Written for the scientist who is new to EPR spectroscopy, the editors have prepared a volume that de-mystifies the basic fundamentals without weighting readers down with detailed physics and mathematics, and then presents clear approaches in specific application areas. The first part presents basic fundamentals and advantages of electron paramagnetic resonance spectrscopy. The second part explores severalapplication areas including chemistry, biology, medicine, materials and geology. A frequently-asked-questions sections focuses on practicalquestions, such as the size of sample, etc. It's an ideal, hands-on reference for chemists and researchers in the pharmaceutical and materials (semiconductor) industries who are looking for a basic introduction to EPR spectroscopy.
Book Synopsis Semiconductor Spintronics and Quantum Computation by : D.D. Awschalom
Download or read book Semiconductor Spintronics and Quantum Computation written by D.D. Awschalom and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.
Book Synopsis Electron Paramagnetic Resonance Studies of Point Defects in AlGaN and SiC by : Xuan Thang Trinh
Download or read book Electron Paramagnetic Resonance Studies of Point Defects in AlGaN and SiC written by Xuan Thang Trinh and published by Linköping University Electronic Press. This book was released on 2015-05-12 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Point defects in semiconductor materials are known to have important influence on the performance of electronic devices. For defect control, knowledge on the model of defects and their properties is required. Information on defects, such as the symmetry and the localization of spins, is essential for identification of defects and understanding their electronic structure. Such information can be obtained from Electron Paramagnetic Resonance (EPR). In many cases, the energy levels of defects can be determined from photoexcitation EPR (photo-EPR) or temperature dependence of the EPR signal. The thesis contains six papers, focusing on the identification and electronic structure investigation of defects and impurities in AlxGa1-xN (x~0.7-1) and silicon carbide (SiC) using EPR in combination with other electrical characterizations and density functional theory calculations. The two first papers concern EPR studies of silicon (Si) in AlGaN alloys. Due to its direct and wide band gap which can be tailored from 3.4 eV for GaN to 6.2 eV for AlN, high-Al-content wurtzite AlxGa1-xN (x?0.7) has been considered as a promising material for fabrication of compact, high-efficiency and non-toxic deep ultraviolet light-emitting diodes (LEDs) and laser diodes (LDs) for replacing low-efficiency and toxic mercury lamps in water/air purification and sterilization. Si is commonly used for n-type doping in AlGaN and AlN, but the conductivity of Si-doped AlxGa1-xN was often reported to drop abruptly at high Al content (x>0.7) and the reason was often speculated to be due to either carrier compensation by other deep levels or Si itself when it transforms from a shallow donor to a DX (or negative-U) center which acts as an acceptor. In paper 1, we showed that Si already forms a stable DX center in AlxGa1-xN with x ~0.77. However, with the Fermi level locating only ~3 meV below the neutral charge state, Ed, Si still behaves as a shallow donor. Negligible carrier compensation by oxygen (O) in Al0.77Ga0.23N:Si layers was observed, suggesting that at such Al content, O does not seem to hinder the n-type doping in the material. In paper 2, we found the coexistence of two Si DX centers, the stable DX1 and the metastable DX2, in AlxGa1-xN for x?0.84. For the stable DX1 center, abrupt deepening of the energy level of the negative charge state DX–, EDX, which determines the ionization energy Ea of the Si donor, with increasing of the Al content for x?0.83 was observed. The dependence of Ea on the Al content in AlxGa1-xN:Si layers (0.79?x?1) was determined. The results explain the drastic decrease of the conductivity as often reported for AlxGa1-xN:Si in previous transport studies. For the metastable DX2 center, we found that the EDX level remains close to Ed for x=0.84÷1. SiC is a wide band-gap semiconductor having high-thermal conductivity, high breakdown field, and large saturated electron drift velocity which are essential properties for high-voltage and high-power devices. In paper 3, the identification of niobium (Nb) in 4Hand 6H-SiC grown by high-temperature chemical vapor deposition (CVD) by EPR and theoretical calculations is presented. We showed that the incorporated Nb formed asymmetric split-vacancy defect (NbSiVC) in which Nb locates in a divacancy, closer to the Si vacancy, and prefers only the hexagonal-hexagonal configuration. In papers 4 and 5, we present the identification and the electronic structure of the negative-U Z1/Z2 center in 4HSiC. The Z1/Z2 defect is known to be the most common deep level revealed by Deep Level Transient Spectroscopy (DLTS) in 4H-SiC epitaxial layers grown by CVD. The center is also known to be the lifetime killer in as-grown CVD material and, therefore, attracts much attention. Using high-doped n-type free-standing 4H-SiC layers irradiated with low-energy (250 keV) electrons, which mainly displace carbon atoms creating C vacancies (VC), C interstitials and their associated defects, it was possible to increase the irradiation dose and, hence, the defect concentration, allowing the application of EPR and DLTS on the same samples. In paper 4, using EPR, photo-EPR, DLTS and capacitance-voltage measurements, we showed that the Z1/Z2 center is related to the (2-|0) level of VC and its higher-lying levels Z1 and Z2 are related to the (-|0) levels of VC at the hexagonal (h) and quasi-cubic (k) sites, respectively. In paper 5, combining EPR and supercell calculations, the negatively charged VC at the k-site was identified. We obtained the excellent agreement in the energy levels of Z1/Z2 determined by DLTS and energy levels of VC calculated by supercell calculations and observed clear negative-U behaviors of the negatively charged VC at both k and h-sites by EPR measurements, consolidating our assignment of the Z1/Z2 levels to the negatively charged states of VC. In paper 6, we studied a defect related to displaced C atoms in n-type 4H-SiC irradiated by low-energy electrons. In irradiated layers, we observed an EPR center at room temperature. After annealing at temperatures in the range of 300-500 °C, this center transforms to a second configuration which is observed in darkness and can be changed back to the first configuration under illumination. Based on the observed 29Si and 13C hyperfine structures, two observed configurations of the EPR center were suggested to be related to different configurations of a carbon interstitial cluster. The annealing, bistable behaviors and energy levels of this EPR center are discussed.
Book Synopsis Radiation Effects in Semiconductors by :
Download or read book Radiation Effects in Semiconductors written by and published by . This book was released on 1967 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Spintronics written by Tomasz Dietl and published by Academic Press. This book was released on 2009-02-12 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new volume focuses on a new, exciting field of research: Spintronics, the area also known as spin-based electronics. The ultimate aim of researchers in this area is to develop new devices that exploit the spin of an electron instead of, or in addition to, its electronic charge. In recent years many groups worldwide have devoted huge efforts to research of spintronic materials, from their technology through characterization to modeling. The resultant explosion of papers in this field and the solid scientific results achieved justify the publication of this volume. Its goal is to summarize the current level of understanding and to highlight some key results and milestones that have been achieved to date. Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high-speed memory, logic and photonic devices. In addition, development of novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high-temperature electronics is anticipated. Spintronics has emerged as one of the fastest growing areas of research This text presents an in-depth examination of the most recent technological spintronic developments Includes contributions from leading scholars and industry experts
Book Synopsis Electron & Nuclear Spin Dynamics in Semiconductor Nanostructures by : M. M. Glazov
Download or read book Electron & Nuclear Spin Dynamics in Semiconductor Nanostructures written by M. M. Glazov and published by Series on Semiconductor Scienc. This book was released on 2018-09-27 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, the physics community has experienced a revival of interest in spin effects in solid state systems. On one hand, the solid state systems, particularly, semiconductors and semiconductor nanosystems, allow us to perform benchtop studies of quantum and relativistic phenomena. On the other hand, this interest is supported by the prospects of realizing spin-based electronics, where the electron or nuclear spins may play a role of quantum or classical information carriers. This book looks in detail at the physics of interacting systems of electron and nuclear spins in semiconductors, with particular emphasis on low-dimensional structures. These two spin systems naturally appear in practically all widespread semiconductor compounds. The hyperfine interaction of the charge carriers and nuclear spins is particularly prominent in nanosystems due to the localization of the charge carriers, and gives rise to spin exchange between these two systems and a whole range of beautiful and complex physics of manybody and nonlinear systems. As a result, understanding of the intertwined spin systems of electrons and nuclei is crucial for in-depth studying and controlling the spin phenomena in semiconductors. The book addresses a number of the most prominent effects taking place in semiconductor nanosystems including hyperfine interaction, nuclear magnetic resonance, dynamical nuclear polarization, spin-Faraday and spin-Kerr effects, processes of electron spin decoherence and relaxation, effects of electron spin precession mode-locking and frequency focussing, as well as fluctuations of electron and nuclear spins.
Book Synopsis Amorphous Semiconductors by : Kazuo Morigaki
Download or read book Amorphous Semiconductors written by Kazuo Morigaki and published by John Wiley & Sons. This book was released on 2016-12-29 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions
Book Synopsis High Magnetic Fields in Semiconductor Physics II by : Gottfried Landwehr
Download or read book High Magnetic Fields in Semiconductor Physics II written by Gottfried Landwehr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.
Book Synopsis Electrical and Optical Properties of Semiconductors by : D. V. Skobel tsyn
Download or read book Electrical and Optical Properties of Semiconductors written by D. V. Skobel tsyn and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 201 pages. Available in PDF, EPUB and Kindle. Book excerpt:
