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Electrical Properties Of Boron Diffused Emitters
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Book Synopsis Electrical Properties of Boron Diffused Emitters by : Natalita Nursam
Download or read book Electrical Properties of Boron Diffused Emitters written by Natalita Nursam and published by . This book was released on 2010 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effective passivation of boron emitters is a critical precursor to the migration of the silicon solar cell industry to n-type substrates. With this requirement in mind, this thesis focuses upon the surface passivation quality of boron diffused emitters in crystalline silicon. The chief analytical approach applied involves the investigation of the dependence of surface recombination on the charge density. The investigation is undertaken on two structures, namely LPCVD Si3N4/SiO2/Si and PECVD SiNx/Si.
Book Synopsis Electrical Properties of Liquid Boron Trioxide by : Fred A. Augusti
Download or read book Electrical Properties of Liquid Boron Trioxide written by Fred A. Augusti and published by . This book was released on 1964 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of the Thermal Electron Emission Properties of Boron-doped Polycrystalline Diamond Films for Use in Energy Conversion by : William Francis Paxton (IV.)
Download or read book Characterization of the Thermal Electron Emission Properties of Boron-doped Polycrystalline Diamond Films for Use in Energy Conversion written by William Francis Paxton (IV.) and published by . This book was released on 2011 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Semiconductor Processing Technology by : Badih El-Kareh
Download or read book Fundamentals of Semiconductor Processing Technology written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 605 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.
Book Synopsis How to Achieve Efficiencies Exceeding 22% with Multicrystalline N-type Silicon Solar Cells by : Florian Schindler
Download or read book How to Achieve Efficiencies Exceeding 22% with Multicrystalline N-type Silicon Solar Cells written by Florian Schindler and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this contribution, we demonstrate a route for efficiencies exceeding 22% with n-type multicrystalline (mc) silicon solar cells based on the TOPCon cell concept featuring a boron-diffused front side emitter and a full-area passivating rear contact. By applying a "high-performance" (HP) crystallization process with an adapted seed structure in order to obtain an optimized grain boundary area fraction, we reduce recombination losses in the HP mc-Si material to a minimum. We discuss the electrical properties of the optimized n-type HP mc-Si, which features very low material-related efficiency losses of approximately 0.5%abs and, thus, enables an efficiency potential of 22.6% with regard to a cell limit of 23.1% of the TOPCon cell concept adapted for multicrystalline silicon. Results at the device level reveal a record efficiency of 21.9%, which is the highest efficiency reported for a multicrystalline silicon solar cell. Finally, we discuss the deviations between the predicted efficiency potential and the solar cell results
Download or read book Research in Progress written by and published by . This book was released on 1975 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Selected Topics in Group IV and II-VI Semiconductors by : E.H.C. Parker
Download or read book Selected Topics in Group IV and II-VI Semiconductors written by E.H.C. Parker and published by Newnes. This book was released on 2012-12-02 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.
Book Synopsis Electronic Properties of Materials by : D.L. Grigsby
Download or read book Electronic Properties of Materials written by D.L. Grigsby and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 1816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976-06 with total page 1216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Reduced Thermal Processing for ULSI by : R.A. Levy
Download or read book Reduced Thermal Processing for ULSI written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.
Book Synopsis Issues in Applied Physics: 2011 Edition by :
Download or read book Issues in Applied Physics: 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 3912 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Applied Physics / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Applied Physics. The editors have built Issues in Applied Physics: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Applied Physics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Applied Physics: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Book Synopsis Diamond: Electronic Properties and Applications by : Lawrence S. Pan
Download or read book Diamond: Electronic Properties and Applications written by Lawrence S. Pan and published by Springer Science & Business Media. This book was released on 1994-12-31 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of diamond for electronic applications is not a new idea. As early as the 1920's diamonds were considered for their use as photoconductive detectors. However limitations in size and control of properties naturally limited the use of diamond to a few specialty applications. With the development of diamond synthesis from the vapor phase has come a more serious interest in developing diamond-based electronic devices. A unique combination of extreme properties makes diamond partiCularly well suited for high speed, high power, and high temperature applications. Vapor phase deposition of diamond allows large area films to be deposited, whose properties can potentially be controlled. Since the process of diamond synthesis was first realized, great progress have been made in understanding the issues important for growing diamond and fabricating electronic devices. The quality of both intrinsic and doped diamond has improved greatly to the point that viable applications are being developed. Our understanding of the properties and limitations has also improved greatly. While a number of excellent references review the general properties of diamond, this volume summarizes the great deal of literature related only to electronic properties and applications of diamond. We concentrate only on diamond; related materials such as diamond-like carbon (DLC) and other wide bandgap semiconductors are not treated here. In the first chapter Profs. C. Y. Fong and B. M. Klein discuss the band structure of single-crystal diamond and its relation to electronic properties.
Book Synopsis U.S. Government Research Reports by :
Download or read book U.S. Government Research Reports written by and published by . This book was released on 1962-07 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1981 with total page 1370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Solar Energy Update written by and published by . This book was released on 1984-10 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanoscaled Semiconductor-on-Insulator Structures and Devices by : S. Hall
Download or read book Nanoscaled Semiconductor-on-Insulator Structures and Devices written by S. Hall and published by Springer Science & Business Media. This book was released on 2007-07-09 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.
Book Synopsis Ion Implantation in Semiconductors by : Susumu Namba
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
