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Author :
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ISBN 13 :
Total Pages : 8 pages
Book Rating : 4.:/5 (958 download)
Download or read book Effects of Displacement Damage on Photocurrent in Silicon Bipolar Junction Transistors written by and published by . This book was released on 2009 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Frank Larin
Publisher :
ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.3/5 (91 download)
Download or read book Radiation Effects in Semiconductor Devices written by Frank Larin and published by . This book was released on 1968 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Andrew Michael Tonigan
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (11 download)
Download or read book The Theory and Application of Bipolar Transistors as Displacement Damage Sensors written by Andrew Michael Tonigan and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Akil K. Sutton
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (618 download)
Download or read book Displacement Damage and Ionization Effects in Advanced Silicon-germanium Heterojunction Bipolar Transistors written by Akil K. Sutton and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A summary of total dose effects observe in advanced Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) is presented in this work. The principal driving froces behind the increased use of SiGe BiCMOS technology in space based electronics systems are outlined in the motivation Section of Chapter I. This is followed by a discussion of the strained layer Si/SiGe material structure and relevant fabrication techniques used in the development of the first generation of this technology. A comprehensive description of the device performance is presented. Chapter II presents an overview of radiation physics as it applies to microelectronic devices. Several sources of radiation are discussed including the environments encountered by satellites in different orbital paths around the earth. The particle types, interaction mechanisms and damage nomenclature are described. Proton irradiation experiments to analyze worst case displacement and ionization damage are examined in chapter III. A description of the test conditions is first presented, followed by the experimental results on the observed dc and ac transistor performance metrics with incident radiation. The impact of the collector doping level on the degradation is discussed. In a similar fashion, gamma irradiation experiments to focus on ionization only effects are presented in chapter IV. The experimental design and dc results are first presented, followed by a comparison of degradation under proton irradiation. Additional proton dose rate experiments conducted to further investigate observed differences between proton and gamma results are presented.
Author : Soujanya Vuppala
Publisher :
ISBN 13 :
Total Pages : 186 pages
Book Rating : 4.:/5 (66 download)
Download or read book Radiation Effects in III-V Heterojunction Bipolar Transistors written by Soujanya Vuppala and published by . This book was released on 2004 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two different growth techniques were examined. Based on the physics of heterojunction bipolar transistors and concepts of radiation damage mechanisms, the irradiation effects were analyzed. The devices were subjected to electron and neutron irradiation and were electrically characterized before and after irradiation. Under electron irradiation these devices were quite robust up to a fluence of 6.69x 10^15 e/cm^2. However, a more careful analysis showed a slight gain improvement at a low base current and a small gain degradation at higher base currents. The gain increase at small base currents and low fluence is believed to be caused by the ionization damage in the polyimide passivation layer. The gain degradation at higher fluence and high base currents is due to the displacement damage in the emitter-base junction region. In the case of neutron irradiation the major effects were (1) the decrease of collector current or equivalently the common-emitter DC current gain reduction and (2) the collector-emitter offset voltage shift. At low fluence of neutron irradiation, a small gain increase is observed at low base currents which is caused by the suppression of the base current due to ionization effect. At higher fluence, gain degradation is observed whose magnitude depends upon the nature and fluence of the irradiation particle. This degradation is caused by the displacement damage in the SCR leading to the current gain degradation at all base currents. In addition to the gain degradation, neutron irradiation causes a shift of the collector-emitter offset voltage, which is caused by the displacement damage in the base-collector region.
Author : C. Claeys
Publisher : Springer Science & Business Media
ISBN 13 : 9783540433934
Total Pages : 440 pages
Book Rating : 4.4/5 (339 download)
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2002-08-21 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
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ISBN 13 :
Total Pages : 20 pages
Book Rating : 4.:/5 (957 download)
Download or read book Comparison of Displacement Damage Due to Ion and Neutron Beam Irradiations in Silicon Bipolar Junction Transistors written by and published by . This book was released on 2007 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : D. L. Nelson
Publisher :
ISBN 13 :
Total Pages : 28 pages
Book Rating : 4.:/5 (125 download)
Download or read book The Effects of Ionizing Radiation on Transistor Gain written by D. L. Nelson and published by . This book was released on 1965 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistor gain is reduced by ioizing radiation, which affects the transistor surface, and by displacement radiation, which causes lattice defects. The investigation of ionizing radiation damage described in this paper was accomplished with X-rays of photon energy less than 150 kev, which is below the energy necessary for displacement damage in silicon. Experiments were performed on silicon dioxide passivated silicon planar transistors with open leads, in a normal amplifying mode and with other junction bias conditions. AC and DC gain measurements at various injection levels showed a gain degradation dependence on the operating bias conditions. Open leads and back-biasing of each junction during irradiation resulted in considerable damage, with almost complete recovery occurring in most transistors tested when the base emitter junction was forward-biased. Many of the characteristics of the radiation damage observed can be explained by Atalla's model that charge collection at the surface causes a widening of the space charge region, thus increasing the recombination-generation current.
Author : E. A. Warman
Publisher :
ISBN 13 :
Total Pages : 1044 pages
Book Rating : 4.:/5 (31 download)
Download or read book Proceedings of the National Symposium on Natural and Manmade Radiation in Space, Held at Las Vegas, Nevada, March 1-5, 1971 written by E. A. Warman and published by . This book was released on 1972 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stephen J. Gaul
Publisher : John Wiley & Sons
ISBN 13 : 1118701879
Total Pages : 392 pages
Book Rating : 4.1/5 (187 download)
Download or read book Integrated Circuit Design for Radiation Environments written by Stephen J. Gaul and published by John Wiley & Sons. This book was released on 2019-12-03 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical guide to the effects of radiation on semiconductor components of electronic systems, and techniques for the designing, laying out, and testing of hardened integrated circuits This book teaches the fundamentals of radiation environments and their effects on electronic components, as well as how to design, lay out, and test cost-effective hardened semiconductor chips not only for today’s space systems but for commercial terrestrial applications as well. It provides a historical perspective, the fundamental science of radiation, and the basics of semiconductors, as well as radiation-induced failure mechanisms in semiconductor chips. Integrated Circuits Design for Radiation Environments starts by introducing readers to semiconductors and radiation environments (including space, atmospheric, and terrestrial environments) followed by circuit design and layout. The book introduces radiation effects phenomena including single-event effects, total ionizing dose damage and displacement damage) and shows how technological solutions can address both phenomena. Describes the fundamentals of radiation environments and their effects on electronic components Teaches readers how to design, lay out and test cost-effective hardened semiconductor chips for space systems and commercial terrestrial applications Covers natural and man-made radiation environments, space systems and commercial terrestrial applications Provides up-to-date coverage of state-of-the-art of radiation hardening technology in one concise volume Includes questions and answers for the reader to test their knowledge Integrated Circuits Design for Radiation Environments will appeal to researchers and product developers in the semiconductor, space, and defense industries, as well as electronic engineers in the medical field. The book is also helpful for system, layout, process, device, reliability, applications, ESD, latchup and circuit design semiconductor engineers, along with anyone involved in micro-electronics used in harsh environments.
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ISBN 13 :
Total Pages : 1162 pages
Book Rating : 4.0/5 ( download)
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975-06 with total page 1162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Publisher : Jeffrey Frank Jones
ISBN 13 :
Total Pages : 7322 pages
Book Rating : 4./5 ( download)
Download or read book Publications Combined - Over 100 Studies In Nanotechnology With Medical, Military And Industrial Applications 2008-2017 written by and published by Jeffrey Frank Jones. This book was released on with total page 7322 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over 7,300 total pages ... Just a sample of the contents: Title : Multifunctional Nanotechnology Research Descriptive Note : Technical Report,01 Jan 2015,31 Jan 2016 Title : Preparation of Solvent-Dispersible Graphene and its Application to Nanocomposites Descriptive Note : Technical Report Title : Improvements To Micro Contact Performance And Reliability Descriptive Note : Technical Report Title : Delivery of Nanotethered Therapies to Brain Metastases of Primary Breast Cancer Using a Cellular Trojan Horse Descriptive Note : Technical Report,15 Sep 2013,14 Sep 2016 Title : Nanotechnology-Based Detection of Novel microRNAs for Early Diagnosis of Prostate Cancer Descriptive Note : Technical Report,15 Jul 2016,14 Jul 2017 Title : A Federal Vision for Future Computing: A Nanotechnology-Inspired Grand Challenge Descriptive Note : Technical Report Title : Quantifying Nanoparticle Release from Nanotechnology: Scientific Operating Procedure Series: SOP C 3 Descriptive Note : Technical Report Title : Synthesis, Characterization And Modeling Of Functionally Graded Multifunctional Hybrid Composites For Extreme Environments Descriptive Note : Technical Report,15 Sep 2009,14 Mar 2015 Title : Equilibrium Structures and Absorption Spectra for SixOy Molecular Clusters using Density Functional Theory Descriptive Note : Technical Report Title : Nanotechnology for the Solid Waste Reduction of Military Food Packaging Descriptive Note : Technical Report,01 Apr 2008,01 Jan 2015 Title : Magneto-Electric Conversion of Optical Energy to Electricity Descriptive Note : Final performance rept. 1 Apr 2012-31 Mar 2015 Title : Surface Area Analysis Using the Brunauer-Emmett-Teller (BET) Method: Standard Operating Procedure Series: SOP-C Descriptive Note : Technical Report,30 Sep 2015,30 Sep 2016 Title : Stabilizing Protein Effects on the Pressure Sensitivity of Fluorescent Gold Nanoclusters Descriptive Note : Technical Report Title : Theory-Guided Innovation of Noncarbon Two-Dimensional Nanomaterials Descriptive Note : Technical Report,14 Feb 2012,14 Feb 2016 Title : Deterring Emergent Technologies Descriptive Note : Journal Article Title : The Human Domain and the Future of Army Warfare: Present as Prelude to 2050 Descriptive Note : Technical Report Title : Drone Swarms Descriptive Note : Technical Report,06 Jul 2016,25 May 2017 Title : OFFSETTING TOMORROW'S ADVERSARY IN A CONTESTED ENVIRONMENT: DEFENDING EXPEDITIONARY ADVANCE BASES IN 2025 AND BEYOND Descriptive Note : Technical Report Title : A Self Sustaining Solar-Bio-Nano Based Wastewater Treatment System for Forward Operating Bases Descriptive Note : Technical Report,01 Feb 2012,31 Aug 2017 Title : Radiation Hard and Self Healing Substrate Agnostic Nanocrystalline ZnO Thin Film Electronics Descriptive Note : Technical Report,26 Sep 2011,25 Sep 2015 Title : Modeling and Experiments with Carbon Nanotubes for Applications in High Performance Circuits Descriptive Note : Technical Report Title : Radiation Hard and Self Healing Substrate Agnostic Nanocrystalline ZnO Thin Film Electronics (Per5 E) Descriptive Note : Technical Report,01 Oct 2011,28 Jun 2017 Title : High Thermal Conductivity Carbon Nanomaterials for Improved Thermal Management in Armament Composites Descriptive Note : Technical Report Title : Emerging Science and Technology Trends: 2017-2047 Descriptive Note : Technical Report Title : Catalysts for Lightweight Solar Fuels Generation Descriptive Note : Technical Report,01 Feb 2013,31 Jan 2017 Title : Integrated Real-Time Control and Imaging System for Microbiorobotics and Nanobiostructures Descriptive Note : Technical Report,01 Aug 2013,31 Jul 2014
Author :
Publisher :
ISBN 13 :
Total Pages : 5 pages
Book Rating : 4.:/5 (957 download)
Download or read book Damage Equivalence of Heavy Ions in Silicon Bipolar Junction Transistors written by and published by . This book was released on 2006 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1058 pages
Book Rating : 4.3/5 (91 download)
Download or read book NASA Technical Memorandum written by and published by . This book was released on 1971 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
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ISBN 13 :
Total Pages : 4 pages
Book Rating : 4.:/5 (684 download)
Download or read book Modeling of Transient Ionizing Radiation Effects in Bipolar Devices at High Dose-rates written by and published by . This book was released on 2000 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: To optimally design circuits for operation at high intensities of ionizing radiation, and to accurately predict their a behavior under radiation, precise device models are needed that include both stationary and dynamic effects of such radiation. Depending on the type and intensity of the ionizing radiation, different degradation mechanisms, such as photoelectric effect, total dose effect, or single even upset might be dominant. In this paper, the authors consider the photoelectric effect associated with the generation of electron-hole pairs in the semiconductor. The effects of low radiation intensity on p-II diodes and bipolar junction transistors (BJTs) were described by low-injection theory in the classical paper by Wirth and Rogers. However, in BJTs compatible with modem integrated circuit technology, high-resistivity regions are often used to enhance device performance, either as a substrate or as an epitaxial layer such as the low-doped n-type collector region of the device. Using low-injection theory, the transient response of epitaxial BJTs was discussed by Florian et al., who mainly concentrated on the effects of the Hi-Lo (high doping - low doping) epilayer/substrate junction of the collector, and on geometrical effects of realistic devices. For devices with highly resistive regions, the assumption of low-level injection is often inappropriate, even at moderate radiation intensities, and a more complete theory for high-injection levels was needed. In the dynamic photocurrent model by Enlow and Alexander. p-n junctions exposed to high-intensity radiation were considered. In their work, the variation of the minority carrier lifetime with excess carrier density, and the effects of the ohmic electric field in the quasi-neutral (q-n) regions were included in a simplified manner. Later, Wunsch and Axness presented a more comprehensive model for the transient radiation response of p-n and p-i-n diode geometries. A stationary model for high-level injection in p-n junctions was developed by Isaque et al. They used a more complete ambipolar transport equation, which included the dependencies of the transport parameters (ambipolar diffusion constant, mobility, and recombination rate) on the excess minority carrier concentration. The expression used for the recombination rate was that of Shockley-Reed-Hall (SRH) recombination which is dominant for low to mid-level radiation intensities. However, at higher intensities, Auger recombination becomes important eventually dominant. The complete ambipolar transport equation including the complicated dependence of transport parameters on the radiation intensity, cannot be solved analytically. This solution is obtained for each of the regimes where a given recombination mechanism dominates, and then by joining these solutions using appropriate smoothing functions. This approach allows them to develop a BJT model accounting for the photoelectric effect of the ionizing radiation that can be implemented in SPICE.
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Publisher :
ISBN 13 :
Total Pages : 1458 pages
Book Rating : 4.X/5 ( download)
Download or read book Transactions of the American Institute of Mining, Metallurgical and Petroleum Engineers written by and published by . This book was released on 1969 with total page 1458 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some vols., 1920-1949, contain collections of papers according to subject.
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ISBN 13 :
Total Pages : 388 pages
Book Rating : 4.:/5 (3 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1967 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
