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Direct Profiling Of Iii V Semiconductor Nanostructures At The Atomic Level By Cross Sectional Scanning Tunneling Microscopy
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Book Synopsis Direct Profiling of III/V Semiconductor Nanostructures at the Atomic Level by Cross-sectional Scanning Tunneling Microscopy by : Dominique Maria Bruls
Download or read book Direct Profiling of III/V Semiconductor Nanostructures at the Atomic Level by Cross-sectional Scanning Tunneling Microscopy written by Dominique Maria Bruls and published by . This book was released on 2003 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic Scale Images of Acceptors in III-V Semiconductors by : Sebastian Loth
Download or read book Atomic Scale Images of Acceptors in III-V Semiconductors written by Sebastian Loth and published by Universitätsverlag Göttingen. This book was released on 2008 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of III-V Semiconductor Nanostructures by Cross-sectional Scanning Tunneling Microscopy by : Peter Offermans
Download or read book Study of III-V Semiconductor Nanostructures by Cross-sectional Scanning Tunneling Microscopy written by Peter Offermans and published by . This book was released on 2005 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Tunneling Microscopy Studies of Nano-scale Properties of III/V Semiconductor Heterostructures by : Songlin Zuo
Download or read book Scanning Tunneling Microscopy Studies of Nano-scale Properties of III/V Semiconductor Heterostructures written by Songlin Zuo and published by . This book was released on 2001 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Surface Modification of III-V Nanostructures Studied by Low-temperature Scanning Tunneling Microscopy by : Yi Liu
Download or read book Surface Modification of III-V Nanostructures Studied by Low-temperature Scanning Tunneling Microscopy written by Yi Liu and published by . This book was released on 2022 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past decade, driven by the demand for materials with high performance for next-generation semiconductor devices (e.g., for quantum computing), the exploration of III-V semiconductor materials and the design of improved devices based on these materials has extended to the nanometer scale, with several highlights in the studies of quantum wells, quantum dots, and nanowires (NW) in recent years. On the path of seeking smaller scale devices, the lateral scale is usually limited by the spatial resolution of the lithographic processes. Now, the challenge lies in the combination of semiconductor nanoscale structure with the desired electronic properties. Scaling down material synthesis to crystalline structures of only few atoms in size and precisely positioned in device configuration has not been realized so far. Moreover, the compatibility for large-scale industrial device processing is also challenging. In this dissertation, I present the surface characterization and studies of the modification of nanostructures on III-V semiconductor surfaces, with the techniques of low temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) and X-ray photoelectron spectroscopy (XPS). Two main topics are Bi incorporation in GaAs (and InAs) surfaces and self-driven formation of nanostructures with atomic-scale precision. Different zinc blende and wurtzite crystal planes have been investigated, including the {11-20}- type facet which for GaAs and InAs uniquely exists on the side walls of NWs and nanoplatelets. The utilization of the tailored facets of NWs as templates for Bi-induced nanostructure formation has been explored as well. Bi-introduced low-dimensional nanostructures and exotic electronic states in III-V semiconductor systems have been investigated. The covalent bonds of Bi atoms in the self-formed Bi nanostructures on III-V substrates can vary depending on the substrate template and preparation condition, such as the Ga-Bi bonds in the 1D chain and 2D island nanostructures on Wz{11-20}-type facets on GaAs NWs. The possibility of tuning the self-formed III-V:Bi nanostructures in a more controllable way has been explored in this thesis. A significant high coverage of Bi on III-V semiconductor surface has been achieved. The observed variable bandgap and Bi-induced surface states are promising for applications in surface bandgap engineering and quantum technology components.
Book Synopsis Nitrogen Containing III-V Semiconductor Surfaces and Nanostructures by : Lena Ivanova
Download or read book Nitrogen Containing III-V Semiconductor Surfaces and Nanostructures written by Lena Ivanova and published by Sudwestdeutscher Verlag Fur Hochschulschriften AG. This book was released on 2009-11 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Different nitrogen containing III-V semiconductor surfaces and nanostructures are studied using scanning tunneling microscopy and spectroscopy. In diluted GaAsN layers single nitrogen atoms can be identified. The measured density of states shows that nitrogen impurities lead to a splitting of the GaAs conduction band. The incorporation of nitrogen with a nominal concentration of 9% into InAs/GaAs QDs leads to a strong dissolution and the formation of extended spherical nitrogen-free InGaAs QDs with a low indium content. Furthermore, for the GaN(1-100) cleavage surface of epitaxially grown GaN substrates it is found that both the nitrogen and gallium derived intrinsic dangling bond surface states are outside of the fundamental bulk band gap. The observed Fermi level pinning at 1.0 eV below the conduction band edge is attributed to the high step density, but not to intrinsic surface states. In GaN wafers dislocations are found to form localized bunches of entangled nonparallel dislocation lines. The charge and the Burgers vector of these dislocations are identified. Finally, an epitaxially grown silicon doping modulation structure is imaged.
Book Synopsis Advances in Scanning Probe Microscopy by : T. Sakurai
Download or read book Advances in Scanning Probe Microscopy written by T. Sakurai and published by Springer. This book was released on 2000-03-27 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a comprehensive presentation of the current knowledge on the electronic properties and manipulation of semiconductor surfaces. This book covers several of the most important and timely topics at the forefront of scanning probe microscopy, such as atom-resolving atomic force microscopy (AFM), application of atom manipulation for fabricating nanoscale and atomic scale structures, theoretical insights into Fullerenes, and atomic manipulation for future single-electron devices.
Book Synopsis Metrology and Diagnostic Techniques for Nanoelectronics by : Zhiyong Ma
Download or read book Metrology and Diagnostic Techniques for Nanoelectronics written by Zhiyong Ma and published by CRC Press. This book was released on 2017-03-27 with total page 843 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.
Book Synopsis Advances in Semiconductor Nanostructures by : Alexander V. Latyshev
Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Chiara Manfredotti
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Chiara Manfredotti and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Probe Microscopy in Nanoscience and Nanotechnology 2 by : Bharat Bhushan
Download or read book Scanning Probe Microscopy in Nanoscience and Nanotechnology 2 written by Bharat Bhushan and published by Springer Science & Business Media. This book was released on 2010-12-17 with total page 823 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the physical and technical foundation of the state of the art in applied scanning probe techniques. It constitutes a timely and comprehensive overview of SPM applications. The chapters in this volume relate to scanning probe microscopy techniques, characterization of various materials and structures and typical industrial applications, including topographic and dynamical surface studies of thin-film semiconductors, polymers, paper, ceramics, and magnetic and biological materials. The chapters are written by leading researchers and application scientists from all over the world and from various industries to provide a broader perspective.
Book Synopsis Scanning Tunneling Microscopy of III-V Semiconductors by :
Download or read book Scanning Tunneling Microscopy of III-V Semiconductors written by and published by . This book was released on 1994 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning tunneling microscopy and theory were combined to create novel depressive quantum dots at room temperature on the (110) surfaces of InSb --- dots which merit further exploration as potential nanopixels for tiny-device lithography; develop a strained-layer superlattice model of high-temperature superconductivity; image, understand, and make models of single-atom-high steps on III-V surfaces; invent and exploit a new kind of spectroscopy of surface states of semiconductors, called tipology; develop phenomenological models of variety of surface phenomena.
Book Synopsis Nanometer-Scale Compositional Structure in III-V Semiconductor Heterostructures Characterized by Scanning Tunneling Microscopy by :
Download or read book Nanometer-Scale Compositional Structure in III-V Semiconductor Heterostructures Characterized by Scanning Tunneling Microscopy written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanometer-scale compositional structure in InAsxP1. InNYAsxPl.x-Y/InP, grown by gas-source molecular-beam epitaxy and in InAsl-xPJkAsl$b#InAs heterostructures heterostructures grown by metal-organic chemical vapor deposition has been characterized using cross-sectional scanning tunneling microscopy. InAsxP1-x alloy layers are found to contain As-rich and P-rich clusters with boundaries formed preferentially within (T 11) and (111) crystal planes. Similar compositional structure is observed within InNYAsxP1-x-Y alloy layers. Imaging of InAsl-xp@Asl#bY superlattices reveals nanometer-scale clustering within both the hAsI-.p and InAsl$bY alloy layers, with preferential alignment of compositional features in the direction. Instances are observed of compositional structure correlated across a heterojunction interface, with regions whose composition corresponds to a smaller unstrained lattice, constant relative to the surrounding alloy material appearing to propagate across the interface.
Book Synopsis Scanning Tunneling Microscopy in Surface Science, Nanoscience, and Catalysis by : Michael Bowker
Download or read book Scanning Tunneling Microscopy in Surface Science, Nanoscience, and Catalysis written by Michael Bowker and published by John Wiley & Sons. This book was released on 2009-11-11 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here, top international authors in the field of STM and surface science present first-class contributions on this hot topic, bringing the reader up to date with the latest developments in this rapidly advancing field. The focus is on the nanoscale, particularly in relation to catalysis, involving developments in our understanding of the nature of the surfaces of oxides and nanoparticulate materials, as well as adsorption, and includes in-situ studies of catalysis on such model materials. Of high interest to practitioners of surface science, nanoscience, STM and catalysis.
Book Synopsis Transmission Electron Microscopy of Semiconductor Nanostructures by : Andreas Rosenauer
Download or read book Transmission Electron Microscopy of Semiconductor Nanostructures written by Andreas Rosenauer and published by Springer. This book was released on 2003-07-03 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.
Book Synopsis Dopant Profiling of III-V Nanostructures for Electronic Applications by : Alexandra Caroline Ford
Download or read book Dopant Profiling of III-V Nanostructures for Electronic Applications written by Alexandra Caroline Ford and published by . This book was released on 2011 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising candidates for future active channel materials of electron devices to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. However, one of the primary challenges of III-V device fabrication is controllable, post-growth dopant profiling. Here InAs nanowires and ultrathin layers (nanoribbons) on SiO2/Si are investigated as the channel material for high performance field-effect transistors (FETs) and post-growth, patterned doping techniques are demonstrated. First, the synthesis of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on SiO2/Si substrates is demonstrated. The back-gated InAs nanowire FETs have electron field-effect mobilities of 4̃,000 cm2/Vs and ION/IOFF 1̃04. The uniformity of the InAs nanowires is demonstrated by large-scale assembly of parallel arrays of nanowires (4̃00 nanowires) on SiO2/Si substrates by a contact printing process. This enables high performance, "printable" transistors with 5-10 mA ON currents. Second, an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on SiO2/Si substrates is demonstrated. As a parallel to silicon-on-insulator (SOI) technology, the abbreviation "XOI" is used to represent this compound semiconductor-on-insulator platform. A high quality InAs/dielectric interface is obtained by the use of a thermally grown interfacial InAsOx layer (1̃ nm thick). Top-gated FETs exhibit a peak transconductance of 1̃.6 mS/0µm at VDS=0.5V with ION/IOFF>104and subthreshold swings of 107-150 mV/decade for a channel length of 0̃.5 0µm. Next, temperature-dependent I-V and C-V studies of single InAs nanowire FETs are utilized to investigate the intrinsic electron transport properties as a function of nanowire radius. From C-V characterization, the densities of thermally-activated fixed charges and trap states on the surface of as-grown (unpassivated) nanowires are investigated to allow the accurate measurement of the gate oxide capacitance. This allows the direct assessment of the electron field-effect mobility. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data highlighting the impact of surface roughness scattering on the mobility degradation for smaller radius nanowires. Next, the electrical properties of the InAs XOI transistors are studied, showing the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Following the investigation of the electrical properties of undoped InAs nanostructures, post-growth, surface doping processes for InAs nanostructures are addressed. Nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach is demonstrated as a means to create ultrashallow junctions. From transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), a dopant profile abruptness of 3̃.5 nm/decade is observed without significant lattice damage. The n+/p+ junctions fabricated using this doping method exhibit negative differential resistance (NDR) behavior, demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of 8̃x1018 cm-3. Next, a gas phase doping approach for InAs nanowires and ultrathin XOI layers using zinc is demonstrated as an effective means for enabling post-growth dopant profiling of nanostructures. The versatility of the approach is demonstrated by the fabrication of gated diodes and p-MOSFETs. Electrically active zinc concentrations of 1̃x1019 cm-3 are achieved which is necessary for compensating the high electron concentration at the surface of InAs to enable heavily p-doped structures. This work could have important applications for the fabrication of planar and non-planar devices based on InAs and other III-V nanostructures which are not compatible with conventional ion implantation processes that often cause severe lattice damage and local stoichiometry imbalance. Lastly, an ultrathin body InAs XOI tunneling field-effect transistor (TFET) on Si substrate is demonstrated. The post-growth, zinc surface doping approach is used for the formation of a p+ source contact which minimizes lattice damage to the ultrathin body InAs XOI compared to ion implantation. The transistor exhibits gated NDR behavior under forward bias, confirming the tunneling operation of the device. In this device architecture, the ON current is dominated by vertical band-to-band tunneling and is thereby less sensitive to the junction abruptness. This work presents a device and materials platform for studying III-V tunnel transistors.
Book Synopsis Physics of Semiconductors by : Marília Caldas
Download or read book Physics of Semiconductors written by Marília Caldas and published by American Institute of Physics. This book was released on 2010-02-24 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt: The conference covered the current and future direction for research in the area of physics of semiconductors, such as growth, sufaces, and interfaces, defects and impurities, wide-band-gap semiconductors, molecular systems, and organic semiconductors, and others.
