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Author : A. J. N. Houghton
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (125 download)
Download or read book Diffusion of Zinc and Silver in Ion-implanted Gallium Arsenide written by A. J. N. Houghton and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stanford University. Stanford Electronics Laboratories
Publisher :
ISBN 13 :
Total Pages : 236 pages
Book Rating : 4.F/5 ( download)
Download or read book Effects of Ion Implanted Gallium, Arsenic and Phosphorus on the Diffusion of Ion Implanted Zinc in Gallium Arsenide Phosphide written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1975 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Edward Bryant Stoneham
Publisher :
ISBN 13 :
Total Pages : 464 pages
Book Rating : 4.F/5 ( download)
Download or read book The Effects of Ion-implanted Gallium, Arsenic, and Phosphorus on the Diffusion of Ion-implanted Zinc in Gallium Arsenide Phosphide written by Edward Bryant Stoneham and published by . This book was released on 1975 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Emily Lin Allen
Publisher :
ISBN 13 :
Total Pages : 306 pages
Book Rating : 4.:/5 (386 download)
Download or read book Diffusion of Ion-implanted Group IV N-type Dopants in Gallium Arsenide and Gallium Arsenide-based Superlattices written by Emily Lin Allen and published by . This book was released on 1991 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : A. H. Agajanian
Publisher : Springer
ISBN 13 :
Total Pages : 282 pages
Book Rating : 4.E/5 ( download)
Download or read book Ion Implantation in Microelectronics written by A. H. Agajanian and published by Springer. This book was released on 1981-09-30 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.
Author : Vikram Shishodia
Publisher :
ISBN 13 :
Total Pages : 166 pages
Book Rating : 4.:/5 (358 download)
Download or read book Effect of Extended Defects on the Diffusion of Ion Implanted Silicon in Gallium Arsenide written by Vikram Shishodia and published by . This book was released on 1996 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. S. Kular
Publisher :
ISBN 13 :
Total Pages : 285 pages
Book Rating : 4.:/5 (16 download)
Download or read book A Comparative Study of Laser and Thermal Annealing of Zinc Ion Implanted Gallium Arsenide written by S. S. Kular and published by . This book was released on 1979 with total page 285 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stanford University. Stanford Electronics Laboratories
Publisher :
ISBN 13 :
Total Pages : 82 pages
Book Rating : 4.F/5 ( download)
Download or read book Analytical Study of Zinc Diffusion in Gallium Arsenide and the Electrical Properties of the Resulting Diffused Layers written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1964 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study undertakes: first, to establish the relationship of these anomalous profiles to the diffusion equation; second, to calculate the relationship among the parameters of the zinc-diffused layers; and third, to measure the resistivity of GaAs as a function of zinc concentration. The results of this study provide: first, a procedure for calculating concentration profiles for various surface concentrations for a system such as zinc in GaAs when only two experimentally measured profiles are known; second, design data concerning the electrical properties of the zinc-diffused layers; and third, measurements of resistivity as a function of zinc concentration in heavily doped GaAs.
Author : Robert Ell Tremain
Publisher :
ISBN 13 :
Total Pages : 93 pages
Book Rating : 4.:/5 (386 download)
Download or read book Doping Gallium Arsenide by Ion Implantation and Proton-enhanced Diffusion written by Robert Ell Tremain and published by . This book was released on 1976 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Siu Sing Chan
Publisher :
ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.:/5 (12 download)
Download or read book Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide written by Siu Sing Chan and published by . This book was released on 1983 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.
Author : Walter M. Gibson
Publisher :
ISBN 13 :
Total Pages : 726 pages
Book Rating : 4.E/5 ( download)
Download or read book Ion-solid Interactions written by Walter M. Gibson and published by . This book was released on 1980 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 852 pages
Book Rating : 4.3/5 (91 download)
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1974 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Susumu Namba
Publisher : Springer Science & Business Media
ISBN 13 : 1468421514
Total Pages : 716 pages
Book Rating : 4.4/5 (684 download)
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Author : Gary Lynn Harris
Publisher :
ISBN 13 :
Total Pages : 314 pages
Book Rating : 4.E/5 ( download)
Download or read book An Experimental Study of Capless Annealing of Ion Implanted Gallium-arsenide written by Gary Lynn Harris and published by . This book was released on 1980 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joseph M. Harrer
Publisher :
ISBN 13 : 9780870790058
Total Pages : 1052 pages
Book Rating : 4.7/5 (9 download)
Download or read book Nuclear Power Reactor Instrumentation Systems Handbook written by Joseph M. Harrer and published by . This book was released on 1973 with total page 1052 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mazin A. H. Kadhim
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (125 download)
Download or read book Diffusion of Zinc in Gallium Arsenide written by Mazin A. H. Kadhim and published by . This book was released on 1971 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Leroy Li-gong Chang
Publisher :
ISBN 13 :
Total Pages : 88 pages
Book Rating : 4.F/5 ( download)
Download or read book Diffusion, Solubility, and Distribution Coefficient of Zinc in Gallium Arsenide and Galium Phosphide written by Leroy Li-gong Chang and published by . This book was released on 1963 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
