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Author : Alvin Bau Yuen Young
Publisher :
ISBN 13 :
Total Pages : 116 pages
Book Rating : 4.F/5 ( download)
Download or read book Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide written by Alvin Bau Yuen Young and published by . This book was released on 1969 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Siu Sing Chan
Publisher :
ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.:/5 (12 download)
Download or read book Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide written by Siu Sing Chan and published by . This book was released on 1983 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.
Author : R. G. Powell
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (258 download)
Download or read book Diffusion of sulphur in gallium arsenide written by R. G. Powell and published by . This book was released on 1975 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 316 pages
Book Rating : 4.:/5 (3 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : N. Baba-Ali
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (598 download)
Download or read book Diffusion of Sulphur and Silicon in Aluminium Gallium Arsenide written by N. Baba-Ali and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Leroy Li-gong Chang
Publisher :
ISBN 13 :
Total Pages : 88 pages
Book Rating : 4.F/5 ( download)
Download or read book Diffusion, Solubility, and Distribution Coefficient of Zinc in Gallium Arsenide and Galium Phosphide written by Leroy Li-gong Chang and published by . This book was released on 1963 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stanford University. Stanford Electronics Laboratories
Publisher :
ISBN 13 :
Total Pages : 236 pages
Book Rating : 4.F/5 ( download)
Download or read book Effects of Ion Implanted Gallium, Arsenic and Phosphorus on the Diffusion of Ion Implanted Zinc in Gallium Arsenide Phosphide written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1975 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sorab K. Ghandhi
Publisher : John Wiley & Sons
ISBN 13 : 0471580058
Total Pages : 870 pages
Book Rating : 4.4/5 (715 download)
Download or read book VLSI Fabrication Principles written by Sorab K. Ghandhi and published by John Wiley & Sons. This book was released on 1994-03-31 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
Author : Edward Bryant Stoneham
Publisher :
ISBN 13 :
Total Pages : 464 pages
Book Rating : 4.F/5 ( download)
Download or read book The Effects of Ion-implanted Gallium, Arsenic, and Phosphorus on the Diffusion of Ion-implanted Zinc in Gallium Arsenide Phosphide written by Edward Bryant Stoneham and published by . This book was released on 1975 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 620 pages
Book Rating : 4.:/5 (31 download)
Download or read book The Journal of Physics and Chemistry of Solids written by and published by . This book was released on 1970 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. Neuberger
Publisher : Springer Science & Business Media
ISBN 13 : 1461596068
Total Pages : 120 pages
Book Rating : 4.4/5 (615 download)
Download or read book III–V Semiconducting Compounds written by M. Neuberger and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Electronic Properties Information Center has developed the Data Table as a precis of the most reliable information available for the physical, crystallographic, mechanical, thermal, electronic, magnetic and optical properties of a given material. Data Tables serve as an introduction to the graphic data compilations on the material published by the Electronic Properties Information Center, EPIC, as Data Sheets. Although the Data Sheets are principally concerned, according to the scope of the Center, with electronic and optical data, it is believed that data covering the complete property spectrum is of the first importance to every scientist and engineer, whatever his information requirements. The enthusiastic reception of these Data Tables has confirmed this opinion and increasing requests for this highly selective type of information has resulted in these III·-V Semiconductor Compounds Data Tables. The major problem in this type of selective data compilation on a semiconducting material, lies in the material purity. Properties may vary so widely with doping, crystallinity, defects, geometric forms and the other parameters of preparation, that any attempts at comparison normally fail. On this basis, we have consis tently attempted to give values derived from experiments on the highest purity single crystals or epitaxial films. At the very least, these data should be reproducible and this gives the data their principal validity. If such values however, are not available, then the next best data are reported, together with material speci fications. These latter include the carrier concentration and the dopant.
Author : G. B. Abdullaev
Publisher : Routledge
ISBN 13 :
Total Pages : 358 pages
Book Rating : 4.:/5 ( download)
Download or read book Atomic Diffusion in Semiconductor Structures written by G. B. Abdullaev and published by Routledge. This book was released on 1987 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Victor E. Borisenko
Publisher : Springer Science & Business Media
ISBN 13 : 1489918043
Total Pages : 374 pages
Book Rating : 4.4/5 (899 download)
Download or read book Rapid Thermal Processing of Semiconductors written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Author : Arnold Samuel Epstein
Publisher :
ISBN 13 :
Total Pages : 76 pages
Book Rating : 4.:/5 (31 download)
Download or read book Design and Fabrication of Gallium Phosphide Rectifiers written by Arnold Samuel Epstein and published by . This book was released on 1970 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ashish Tandon
Publisher :
ISBN 13 :
Total Pages : 362 pages
Book Rating : 4.:/5 (388 download)
Download or read book Incorporation and Diffusion of Dopants in Gallium Arsenide, Indium Phosphide and Indium Gallium Arsenide written by Ashish Tandon and published by . This book was released on 1998 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : W.M. Jr. Coughran
Publisher : Springer Science & Business Media
ISBN 13 : 1461384079
Total Pages : 173 pages
Book Rating : 4.4/5 (613 download)
Download or read book Semiconductors written by W.M. Jr. Coughran and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor and integrated-circuit modeling are an important part of the high-technology "chip" industry, whose high-performance, low-cost microprocessors and high-density memory designs form the basis for supercomputers, engineering workstations, laptop computers, and other modern information appliances. There are a variety of differential equation problems that must be solved to facilitate such modeling. This two-volume set covers three topic areas: process modeling and circuit simulation in Volume I and device modeling in Volume II. Process modeling provides the geometry and impurity doping characteristics that are prerequisites for device modeling; device modeling, in turn, provides static current and transient charge characteristics needed to specify the so-called compact models employed by circuit simulators. The goal of these books is to bring together scientists and mathematicians to discuss open problems, algorithms to solve such, and to form bridges between the diverse disciplines involved.
Download or read book Properties of Tellurium-Doped and Sulfur-Doped Stoichiometric Compound Gallium-Arsenide(1-X)-Phosphide(x) Near the Direct-Indirect Transition written by and published by . This book was released on 1967 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
