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Development Of Epitaxial N And P Type Gallium Nitride By Ionized Molecular Beam Epitaxy And Reactive Magnetron Sputtering
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Book Synopsis Development of Epitaxial N and P-type Gallium Nitride by Ionized Molecular Beam Epitaxy and Reactive Magnetron Sputtering by : Jennifer Taitt Ross
Download or read book Development of Epitaxial N and P-type Gallium Nitride by Ionized Molecular Beam Epitaxy and Reactive Magnetron Sputtering written by Jennifer Taitt Ross and published by . This book was released on 1993 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1995 with total page 874 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Related Materials II: Volume 468 by : C. R. Abernathy
Download or read book Gallium Nitride and Related Materials II: Volume 468 written by C. R. Abernathy and published by Materials Research Society. This book was released on 1997-08-13 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.
Book Synopsis Epitaxial Growth and Characterization of Gallium Nitride Films on SI(111) by : Biemann Alexander Martin
Download or read book Epitaxial Growth and Characterization of Gallium Nitride Films on SI(111) written by Biemann Alexander Martin and published by . This book was released on 2005 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III-nitrides, and in particular, aluminum nitride (AIN), gallium nitride (GaN), and indium nitride (InN) make up a class of compound semiconductors with direct bandgaps ranging from 1.2 electron volts to 6.2 electron volts (eV). They afford a broad range of applications including light emitting diodes (LED's) and laser diodes (LD's) emitting from the visible to the ultraviolet (UV) portions of the electromagnetic spectrum, radiation detectors, and high power, high frequency electronic devices capable of operating at high temperatures, and in hostile chemical environments. Materials studied in this work were grown on silicon substrates, Si(111) by Molecular Beam Epitaxy (MBE) under a broad range of growth parameters and characterized using X-ray diffraction (XRD), Energy Dispersive Spectroscopy (EDS), Atomic Force Microscopy (AFM), Photoluminescence (PL), and four-point probe resistivity measurements. Growth began with deposition of 0.3 monolayer (ML) of Al on the Si(111)7x7 surface leading to fully passivated Si(111) [root of]3x[root of]3-Al surface. Next, an AIN buffer layer and then the GaN layers were deposited. X-ray measurements indicated growth of single-crystalline hexagonal GaN(001) while PL measurement demonstrated a peak position corresponding to bulk hexagonal-GaN. Sample morphology and resistivity showed a strong dependence on growth conditions. The layer RMS roughness increased with increasing thickness for samples grown with low atomic-nitrogen (N) to molecular N ratio while smoother layers were obtained at the highest atomic N concentrations. Un-intentionally doped layers were n-type. P-type doping was achieved by doping with Mg.
Book Synopsis Gallium Nitride and Related Materials by :
Download or read book Gallium Nitride and Related Materials written by and published by . This book was released on 1997 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization by : Wook Kim
Download or read book Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization written by Wook Kim and published by . This book was released on 1998 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical, Optical, and Defect Properties of Carbon-doped Gallium Nitride Grown by Molecular-beam Epitaxy by : Robert David Armitage
Download or read book Electrical, Optical, and Defect Properties of Carbon-doped Gallium Nitride Grown by Molecular-beam Epitaxy written by Robert David Armitage and published by . This book was released on 2003 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Gallium Nitride Using Molecular Beam Epitaxy by : Jun Chen
Download or read book Growth of Gallium Nitride Using Molecular Beam Epitaxy written by Jun Chen and published by . This book was released on 2001 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 916 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Epitaxial Gallium Nitride Thin Flims Prepared by Magnetron Sputter Epitaxy by : Priti Singh
Download or read book Growth and Characterization of Epitaxial Gallium Nitride Thin Flims Prepared by Magnetron Sputter Epitaxy written by Priti Singh and published by . This book was released on 1997 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Download or read book ספר זכרון מאיר written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Related Materials: Volume 395 by : F. A. Ponce
Download or read book Gallium Nitride and Related Materials: Volume 395 written by F. A. Ponce and published by . This book was released on 1996-09-04 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
Book Synopsis III-V Nitrides by : Fernando A. Ponce
Download or read book III-V Nitrides written by Fernando A. Ponce and published by . This book was released on 1997 with total page 1290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride Film Deposition by Ionized Cluster Beam Epitaxy by : Ghulum Bakiri
Download or read book Gallium Nitride Film Deposition by Ionized Cluster Beam Epitaxy written by Ghulum Bakiri and published by . This book was released on 1983 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: An experimental Ionized Cluster Beam System similar in design to the one developed at Kyoto University in Japan was. designed and constructed in the Microelectronics Laboratory at NJIT. This involved making the working drawings, having the parts machined and then assembling the system in a vacuum system together with the necessary variable power supplies, meters, controls, gas inlets, cooling water connections, etc. Eleven deposition runs were then attempted to grow gallium nitride utilizing the system constructed. In a typical deposition run, gallium was vaporized from a boron nitride crucible at 1000° C and allowed to expand through a 0.5 mm nozzle into a low pressure region containing nitrogen at 1-5 X 10−4 torr in order to form clusters of about 1000 atoms each. The gallium clusters were ionized by an electron source (300 mA) and deposited on heated quartz substrates (550° C) for reactive growth with nitrogen. For the above deposition conditions, the film growth rate was only 1 A°/min and the films were highly insulating. Photoluminescence measurements and surface analysis of the grown films revealed boron contaimination which was then traced to water vapor contamination of the boron nitride crucible and heater. The water vapor if not driven out by pre-heating the crucible in an oven, caused the boron nitride to decompose at elevated temperatures introducing reactive contaminants at the substrate surface. Further experiments showed that for GaN deposition rates greater, than 1 A° /min (and up to 1 A° /sec) 0 the crucible temperature should be at least 1100° C but preferably around 1400° C.
Book Synopsis Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique by : David J. Miller
Download or read book Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique written by David J. Miller and published by Stanford University. This book was released on 2011 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic amplifiers and circuits; however there has been no bulk method for the production of GaN substrates for device layer growth. Instead, thick GaN layers are heteroepitaxially deposited onto non-native substrates (usually sapphire) by one of two vapor phase epitaxy (VPE) techniques: MOVPE (metalorganic VPE) or HVPE (hydride VPE). Each method has its strengths and weaknesses: MOVPE has precise growth rate and layer thickness control but it is slow and expensive; HVPE is a low-cost method for high rate deposition of thick GaN, but it lacks the precise control and heterojunction layer growth required for device structures. Because of the large (14%) lattice mismatch, GaN grown on sapphire requires the prior deposition of a low temperature MOVPE nucleation layer using a second growth process in a separate deposition system. Here we present a novel hybrid VPE system incorporating elements of both techniques, allowing MOVPE and HVPE in a single growth run. In this way, a thick GaN layer can be produced directly on sapphire. GaN growth commences as small (50-100 nm diameter) coherent strained 3-dimensional islands which coalesce into a continuous film, after which 2-dimensional layer growth commences. The coalescence of islands imparts significant stress into the growing film, which increases with the film thickness until catastrophic breakage occurs, in-situ. Additionally, the mismatch in thermal expansion rates induces compressive stress upon cooling from the growth temperature of 1025°C. We demonstrate a growth technique that mitigates these stresses, by using a 2-step growth sequence: an initial high growth rate step resulting in a pitted but relaxed film, followed by a low growth rate smoothing layer. As a result, thick (> 50 [Mu]m) and freestanding films have been grown successfully. X-ray rocking curve linewidth of 105 arcseconds and 10K PL indicating no "yellow" emission indicate that the material quality is higher than that produced by conventional MOVPE. By further modifying the hybrid system to include a metallic Mn source, it is possible to grow a doped semi-insulating GaN template for use in high frequency electronics devices.
Book Synopsis The Growth of Gallium Nitride Films Via the Innovative Technique of Atomic Layer Epitaxy by :
Download or read book The Growth of Gallium Nitride Films Via the Innovative Technique of Atomic Layer Epitaxy written by and published by . This book was released on 1989 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: This contract involves investigating the efficacy of atomic layer and molecular beam epitaxy techniques for the growth of GaN (a wide bandgap semiconductor). During this reporting period, work was extended to growth of materials in the Al-Ga-In-N solid solution series as well as pure AlN and InN, and heterostructures of these materials. In addition, work was begun on the growth of cubic boron nitride. The first reported heterostructures of cubic GaN/ AlN were produced. Work also continued on characterization of the cubic GaN already produced. Much improved material and higher growth rates were observed with the installation of a NCSU-designed, constructed, and commissioned electron cyclotron resonance plasma source. Epitaxial growth, Crystallography.
