Development of 4H Silicon Carbide JFET-based Power Integrated Circuits

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ISBN 13 :
Total Pages : 140 pages
Book Rating : 4.:/5 (499 download)

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Book Synopsis Development of 4H Silicon Carbide JFET-based Power Integrated Circuits by : Yongxi Zhang

Download or read book Development of 4H Silicon Carbide JFET-based Power Integrated Circuits written by Yongxi Zhang and published by . This book was released on 2008 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H-Silicon Carbide (4H-SiC) is a promising semiconductor for the next generation of high power, high frequency, and high temperature applications. Significant progresses have been made on SiC technologies since 1990's. Superior device performance demonstrated by SiC discrete power devices is leading to the commercialization of SiC diodes and transistors targeting mid and high power level applications. As compared to the vertical power devices, the lateral device technology promises to fulfill the monolithic integration of both power devices and control circuits. SiC power integrated circuits (PICs) share similar advantages as Si PICs while providing a much higher power handling capability at higher frequency. In addition, SiC power junction field transistor (JFET) is promising for high temperature, reliable operation without suffering from the reliability problems faced by metal-oxide-semiconductor junction field transistors (MOSFETs) and bipolar junction transistors (BJTs). Therefore, the lateral JFET technology is investigated under this research. This thesis describes design, fabrication, characterization, and further optimization and analysis of a novel vertical channel lateral JFET (VC-LJFET) technology in 4H-SiC and the demonstration of the world's first SiC power Integrated circuit. A double reduced surface electric field (RESURF) structure is applied to achieve higher voltage and lower on-resistance for the power lateral JFET (LJFET). A 4-stage buffer circuit based on the resistive-load n-type JFET inverter is designed and integrated with the power LJFET to form a monolithic power integrated circuit. Important fabrication procedures are presented. The fabricated power LJFET demonstrates a blocking voltage of 1028 V and a specific on-resistance of 9.1 m[ohm]; cm2, resulting in a record-high VBR2/RON, SP figure-of-merit (FOM) of 116 MW/cm2 for lateral power devices. The optimized RESURF structure demonstrates blocking capability of 120 V/[micro]m in 4H-SiC. The temperature dependences of important device parameters, such as threshold voltage, transconductance, and electron mobility, are also discussed. Based on the technology, the integration of a high performance lateral power JFET with buffer circuits has been demonstrated for the first time. The SiC LJFET power IC chips demonstrate a record high power level at frequencies up to a few MHz. An on-chip temperature sensing diode is implemented to monitor the chip junction temperature. The rise time and fall time around 20 ns for the SiC power LJFET are observed and remains unchanged even at a junction temperature as high as 250 oC when driven by a Si MOS gate driver. The demonstration of SiC power integration technology points to the robust integrated power electronics applications in the harsh environment and boosts the power level of single-chip power electronic system from 100 W to 1000 W.

Power Devices and Integrated Circuits Based on 4H-SiC Lateral JFETs

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ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (667 download)

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Book Synopsis Power Devices and Integrated Circuits Based on 4H-SiC Lateral JFETs by : Ming Su

Download or read book Power Devices and Integrated Circuits Based on 4H-SiC Lateral JFETs written by Ming Su and published by . This book was released on 2010 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide-bandgap semiconductor that has drawn significant research interest for the next-generation power electronics due to its superior electrical properties. Excellent device performance has been repeatedly demonstrated by SiC vertical power devices. However, for lateral power devices that offer the unique advantage of possible monolithic integration of a power electronics system-on-chip, the progress has been limited. This dissertation describes the 4H-SiC vertical-channel lateral JFET (VC-LJFET) technology that provides a suitable solution for power integration applications. Power devices based on this structure have a trenched-and-implanted vertical channel and a carefully designed lateral drift region, enabling normally-off operation with a high-voltage blocking capability. Low-voltage (LV) versions of VC-LJFET feature nearly identical device structures with a reduced drift length, and can be readily fabricated on the same wafer with the power devices. Essential components for a power integrated circuit, such as gate drive buffers, can be thus implemented monolithically on the VC-LJFET technology platform. This dissertation research starts with the process improvement investigation for the TI-JFET structure. Particularly, a novel ohmic contact scheme is developed using Ni to replace the troubling process in TI-VJFETs. The entire process flow of VC-LJFET is then designed and demonstrated in experiments, leading to the world's first demonstration of a normally-off lateral power JFET in SiC. As of today, power JFETs fabricated in this technology are still representing the best-performing lateral power transistors in SiC and silicon. Based on the VC-LJFET structure, low-voltage circuits critical to the power integration applications are investigated. Gate drive buffer provides the interface between low-voltage control circuits and the power device, and is recognized as a key component for an integrated power electronics system. A thorough design, modeling and optimization work on the LJFET-based gate drive circuits is described. These buffer drivers using resistor or transistor loads will enable high-frequency switching of the power LJFETs at megahertz levels. The results achieved in this research strongly suggest the feasibility of SiC power integration technologies in general, as well as the suitability of the SiC VC-LJFET platform for such applications in particular.

Fabrication and Characterization of 4h-sic Jfet-based Integrated Circuits

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (114 download)

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Book Synopsis Fabrication and Characterization of 4h-sic Jfet-based Integrated Circuits by : Srihari Rajgopal

Download or read book Fabrication and Characterization of 4h-sic Jfet-based Integrated Circuits written by Srihari Rajgopal and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation demonstrates 4H-SiC integrated circuits (ICs) operating to 500 deg.C (932 deg.F), using 10 μm, n-channel depletion mode junction field-effect transistors (JFETs). Key challenges in this development included: (i) large variations in the doping level and thickness of the SiC epitaxial layers of the starting wafers; (ii) low hole mobility of n-type 4H-SiC; (iii) limited circuit design space due to the use of only n-type devices and resistors; (iv) large variations in device parameters from room temperature to 500 deg.C; and (v) fabrication processes limitations.A number of analog IC building blocks for sensor interfacing and signal conditioning were included in the development effort, including a voltage reference, an instrumentation amplifer (INA) with a buffer amplifier to (i) regulate power supply voltage, and (ii) amplify and buffer the output of a low frequency voltage-based bridge-type pressure sensor.An outline of the contributions of this work is as follows:1. 4H-SiC, JFET-based sensor interface ICs were fabricated and could operate from room temperature to 500 deg.C.2. A voltage reference building block was demonstrated, with line regulation of ±2.5% between 25V to 50V input voltage from 100 deg.C to 500 deg.C using a 5.95 kO external resistor load. Load regulation was within ±3.5% between 25V to 50V input voltage from 100 deg.C to 500 deg.C with load resistances of 4.99 kO to 7 kO.3. An INA was implemented as a cascaded connection of front- and back-end units. The back-end amplifier demonstrated a differential gain of 17 dB, dropping to 14.2 dB from 25 deg.C to 500 deg.C. The frequency response of the buffer amplifier was stable between 25 deg.C to 500 deg.C--with a 3 km-long cable load representative of down-hole drilling applications.4. Material and fabrication issues that resulted in the deviation of the resistor values and transistor threshold voltages from intended design values were identified using a combination of materials analysis, transistor parametric modeling, circuit simulation and test bench measurements.5. An investigation into alternative high-temperature dielectric materials was also initiated. Both aluminum oxide and hafnium oxide appear promising for future designs, though further tests are needed.In high temperature sensor interface applications, JFET 4H-SiC IC technology is shown to be viable.

4H-SiC Integrated Circuits for High Temperature and Harsh Environment Applications

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ISBN 13 :
Total Pages : 186 pages
Book Rating : 4.:/5 (112 download)

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Book Synopsis 4H-SiC Integrated Circuits for High Temperature and Harsh Environment Applications by : Mihaela Alexandru

Download or read book 4H-SiC Integrated Circuits for High Temperature and Harsh Environment Applications written by Mihaela Alexandru and published by . This book was released on 2014 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300oC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300oC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300oC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.

Fundamentals of Silicon Carbide Technology

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Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Design of Operational Amplifiers and Utilizing SiC JFET for Analog Design

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (683 download)

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Book Synopsis Design of Operational Amplifiers and Utilizing SiC JFET for Analog Design by : Ayden Maralani

Download or read book Design of Operational Amplifiers and Utilizing SiC JFET for Analog Design written by Ayden Maralani and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Demand for capable and reliable semiconductor and fabrication technology for high temperature and power electronics applications has been increasing in recent years. Silicon Carbide (SiC), as a wide bandgap compound semiconductor, demonstrates superior characteristics such as high thermal conductivity, high breakdown voltage, and long-lasting reliable operation at elevated temperature. SiC-based circuits and systems are capable to offer significant performance enhancements to various applications. Integrated power management units and conversion modules in HEVs, integrated sensors for aircraft engines, development of small-sized portable power generators are among many applications that require reliable circuits with long-lasting functional lifetime. Nevertheless, there are numerous challenges associated with the design and fabrication of SiC-based circuits. The aim of this research is to practically design and implement novel operational amplifiers (opamps) based on Vertical Channel 4H-SiC JFET (SiC JFET) that can be utilized as sub-circuits of integrated SiC JFET-based circuits and systems. Recently, SiC power JFET-based power management units were developed that deploy non-SiC JFET-based circuits for analog signal processing, driving, and control, because all SiC JFET-based circuits were not available for full integration. However, utilizing SiC JFET for analog design (in order to close the mentioned gap) exhibits significant design challenges, even at room temperature. These fundamental challenges are low intrinsic gain, the requirement to limit the gate to source voltage range, and restrictions on utilizing channel length as a design parameter due to fabrication complexity. These challenges must be successfully overcome at room temperature, before moving towards high temperature SiC JFET-based analog design. The main objective of this dissertation is to establish a design base, overcome the challenges, demonstrate the feasibility, and present all SiC JFET-based opamps that are designed for gain, CMRR, and overall performance. Before attempting to design, both Enhancement and Depletion Mode SiC JFETs are characterized, analyzed, and modeled for simulation. Unique and reliable opamp configurations are presented that take design requirements into account, use threshold voltage instead of channel length as a design parameter, and employ gain enhancement techniques while obtaining maximum possible bandwidth. The final opamps are fabricated and tested and the results show that the objective is accomplished.

A Monolithically Integrated Power JFET and Junction Barrier Schottky Diode in 4H Silicon Carbide

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ISBN 13 :
Total Pages : 111 pages
Book Rating : 4.:/5 (785 download)

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Book Synopsis A Monolithically Integrated Power JFET and Junction Barrier Schottky Diode in 4H Silicon Carbide by : Rahul Radhakrishnan

Download or read book A Monolithically Integrated Power JFET and Junction Barrier Schottky Diode in 4H Silicon Carbide written by Rahul Radhakrishnan and published by . This book was released on 2012 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficiency of power management circuits depends significantly on their constituent switches and rectifiers. The demands of technology are increasingly running up against the intrinsic properties of Si based power devices. 4H-Silicon Carbide (SiC) has superior properties that make it attractive for high power applications. SiC rectifiers are already a competitive choice and SiC switches have also been commercialized recently. Junction Barrier Schottky (JBS) diodes, which combine the advantages of PN and Schottky, have higher Figure of Merit (FOM) as rectifiers. Among switches, a robust and mature process has been developed for Silicon Carbide Vertical Junction Field Effect Transistors (VJFETs), which currently gives it the highest unipolar FOM. Switches are frequently combined with anti-parallel diodes in power circuits. This thesis describes the development of a SiC-based monolithically integrated power switch and diode. Monolithic integration increases reliability and efficiency, and reduces cost. Because of their superior properties and similarities in fabrication, we chose the SiC VJFET and JBS diode as the switch and rectifier. Detailed design, fabrication and characterization of the integrated switch to block above 800 V and conduct current beyond 100 A/cm2 is explained. In this process, the first physics-based 2-D compact model is developed for reverse leakage in a JBS diode as a function of design parameters. Since the gate-channel junctions of SiC VJFETs cannot be assumed to be abrupt, an existing analytical model for Si VJFETs is extended to account for graded gate-channel junctions. Using these analytical models, design rules are developed for the VJFET and JBS diode. Finite element simulations are used to find the best anode layout of the JBS diode and optimize electric field termination in the integrated device to ensure their capability to operate at high voltage. Finally, a spin-on glass based process is developed for filling the gate trenches of the VJFET to improve long-term robustness in extreme environments. The integrated power switch developed in this thesis points to the attractions of monolithic integration in SiC power circuits. Analytical compact design equations derived here will facilitate faster and easier design of switches and rectifiers for desired circuit operation.

Silicon Carbide, Volume 2

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Publisher : John Wiley & Sons
ISBN 13 : 9783527629084
Total Pages : 520 pages
Book Rating : 4.6/5 (29 download)

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Book Synopsis Silicon Carbide, Volume 2 by : Peter Friedrichs

Download or read book Silicon Carbide, Volume 2 written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.

Extreme Environment Electronics

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Publisher : CRC Press
ISBN 13 : 1351832808
Total Pages : 1044 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Extreme Environment Electronics by : John D. Cressler

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Advancing Silicon Carbide Electronics Technology II

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Publisher : Materials Research Forum LLC
ISBN 13 : 164490067X
Total Pages : 292 pages
Book Rating : 4.6/5 (449 download)

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Book Synopsis Advancing Silicon Carbide Electronics Technology II by : Konstantinos Zekentes

Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Lateral Power Transistors in Integrated Circuits

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Publisher : Springer
ISBN 13 : 3319005006
Total Pages : 235 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Lateral Power Transistors in Integrated Circuits by : Tobias Erlbacher

Download or read book Lateral Power Transistors in Integrated Circuits written by Tobias Erlbacher and published by Springer. This book was released on 2014-10-08 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.

Silicon Carbide

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Publisher : John Wiley & Sons
ISBN 13 : 3527629068
Total Pages : 528 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Silicon Carbide by : Peter Friedrichs

Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Designing Framework for the Computer Aided Design of Silicon Carbide JFET Circuits in BLEO Environments

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Publisher :
ISBN 13 :
Total Pages : 94 pages
Book Rating : 4.:/5 (1 download)

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Book Synopsis Designing Framework for the Computer Aided Design of Silicon Carbide JFET Circuits in BLEO Environments by : Venkata Vinay Naidugari

Download or read book Designing Framework for the Computer Aided Design of Silicon Carbide JFET Circuits in BLEO Environments written by Venkata Vinay Naidugari and published by . This book was released on 2017 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit Design and testing are two essential processes to synthesis of an efficient and reliable circuit. Real-time testing of a circuit through circuit fabrication and development is an expensive and a risky procedure whereas testing the circuit by modelling and simulating is more efficient and inexpensive. Silicon-based semiconductors are the basic components of any modern day electronic devices, and their usage has dominated the marketplace. But these conventional CMOS devices cannot exist in an environment consisting of harsh radiation, high temperature and many other environmental conditions, such as Venus or Mars. However, 6H-SiC JFETs, which are basic logic gate integrated circuits, have significantly potential for persistent operation in these environmental conditions. On the basis of the temperature effects of 6H-SiC JFET’s compared to conventional CMOS JFET’s, we choose to develop the framework for a computer aided design of Silicon Carbide JFET circuits in Beyond Low Earth Orbit (BLEO) environments. Our framework will help test the modern and emerging nanotechnologies for the temperature dependence of SiC electronics and sensors in harsh environments. Framework along with the Integrated circuit design and the simulations for the SiC electronic circuit are the desired results for this project.

SiC Technology

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Author :
Publisher : Springer Nature
ISBN 13 : 3031634187
Total Pages : 317 pages
Book Rating : 4.0/5 (316 download)

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Book Synopsis SiC Technology by : Maurizio Di Paolo Emilio

Download or read book SiC Technology written by Maurizio Di Paolo Emilio and published by Springer Nature. This book was released on with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fundamentals of Silicon Carbide Technology

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Development of Pilot Production Capabilities for Silicon Carbide Power Devices and Integrated Circuits

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Publisher :
ISBN 13 :
Total Pages : 109 pages
Book Rating : 4.:/5 (946 download)

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Book Synopsis Development of Pilot Production Capabilities for Silicon Carbide Power Devices and Integrated Circuits by :

Download or read book Development of Pilot Production Capabilities for Silicon Carbide Power Devices and Integrated Circuits written by and published by . This book was released on 2002 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effort funded by this contract encompassed two principal objectives: First, the creation of a silicon carbide device prototyping capability at Mississippi State University by the creation of the first SiC fab line independent of commercial control. Secondly, the demonstration of a power Schottky barrier diode (SBD) prototyped in preproduction lot size. This final report documents the detailed description of the design, fabrication methodology, and testing results of the 15,000 SBD's fabricated and tested. The principle accomplishments of the funded effort are: The completion of a SiC foundry including fabrication services. Schottky barrier diodes were fabricated with reverse blocking characteristics averaging 500 volts, and with on-state forward voltage drops of

IEICE Transactions on Electronics

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Author :
Publisher :
ISBN 13 :
Total Pages : 428 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis IEICE Transactions on Electronics by :

Download or read book IEICE Transactions on Electronics written by and published by . This book was released on 2008 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: