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Design Fabrication And Characterization Of Indium Phosphide Based Heterostructure Field Effect Transistors For High Power Microwave Applications
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Book Synopsis Design, Fabrication, and Characterization of Indium Phosphide-based Heterostructure Field-effect Transistors for High-power Microwave Applications by : Daniel Gerard Ballegeer
Download or read book Design, Fabrication, and Characterization of Indium Phosphide-based Heterostructure Field-effect Transistors for High-power Microwave Applications written by Daniel Gerard Ballegeer and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demonstrated microwave performance capabilities superior to those of GaAs-based and Si-based transistors. In particular, InGaAs/InAlAs modulation-doped field effect transistors (MODFETs) have exhibited world-record unity current gain frequencies ($fsb{t}$s) as well as extremely high power cutoff frequencies ($fsb{rm max}$s) and have, therefore, become the optimum devices for small-signal applications at high frequencies, particularly in low-noise applications. Despite these strengths, InP-based HFETs have inherent weaknesses which limit their capabilities for large-signal, high output power applications. Due to a combination of the poor Schottky characteristics of InAlAs, which is often the material in contact with the metal gate, and the small bandgap of InGaAs, which is the material often used for the channel, the devices typically have lower breakdown voltages than their GaAs counterparts. However, because of the phenomenally high values of $fsb{t}$ and $fsb{rm max}$ obtainable for these devices, there has been a growing desire to overcome these weaknesses in order that the devices can be used for high-power applications at microwave frequencies. The subject of this work is the investigation of the possibility of designing InP-based HFETs for use as high-power devices. The emphasis is not on obtaining a world-record high frequency power device; instead, the focus is on the critical issues involved when designing the devices for high power applications. Hence, the goal is to obtain an in-depth understanding of the internal physics of the FETs when they are operating as power devices, and in so doing, attempt to arrive at designs and techniques which will overcome some of the limitations of InP-based HFETs.
Book Synopsis Design, Fabrication, and Characterization of InP-based Heterostructure Field-effect Transistors for High-power Microwave Applications by : Daniel Gerard Ballegeer
Download or read book Design, Fabrication, and Characterization of InP-based Heterostructure Field-effect Transistors for High-power Microwave Applications written by Daniel Gerard Ballegeer and published by . This book was released on 1995 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modulation-doped Field Effect Transistors for High-power Microwave Applications by : Ronald Waldo Grundbacher
Download or read book Modulation-doped Field Effect Transistors for High-power Microwave Applications written by Ronald Waldo Grundbacher and published by . This book was released on 1997 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Book Synopsis Small-signal Equivalent Circuit Model Characterization of Indium Phosphide Heterostructure Field Effect Transistors by : Masahiro Arakawa
Download or read book Small-signal Equivalent Circuit Model Characterization of Indium Phosphide Heterostructure Field Effect Transistors written by Masahiro Arakawa and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication and Characterization of Field-effect Transistors Based on Two-dimensional Materials and Their Circuit Applications by : Sk. Fahad Chowdhury
Download or read book Design, Fabrication and Characterization of Field-effect Transistors Based on Two-dimensional Materials and Their Circuit Applications written by Sk. Fahad Chowdhury and published by . This book was released on 2015 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of two-dimensional layered materials has witnessed extensive research activities during the past decade, which commenced with the seminal work of isolating graphene from bulk graphite. In addition to providing a rich playground for scientific experiments, graphene has soon become a material of technological interest for many of its fascinating electrical, thermal, mechanical and optical properties. The controllability of carrier density with electric field in graphene, along with very high carrier mobility and saturation velocity, has motivated the use of graphene channel in field-effect devices. Also, the two-dimensional layered materials family has grown very rapidly with the application of the graphene exfoliation technique and many of these elemental and compound materials are considered useful for transistor applications. In this work, various aspects of the use of two-dimensional layered materials for transistor applications were analyzed. Starting with material synthesis, field-effect transistors (FETs) were designed, fabricated and tested for their DC and high frequency performances. Through the detailed electrical and spectroscopic investigations of several processing techniques for enhanced FET performance, numerous insights were obtained into the FET operation and performance bottlenecks. The reduction of charged impurity scattering in graphene FET by Hexamethyldisilazane interaction improved field-effect mobility and reduced residual carrier concentration. This technique was also shown to be promising for other two-dimensional materials based FET. A useful technique for reducing the thickness of black phosphorus flake with oxygen plasma etching was developed. Both back-gated and top-gated FETs were implemented with good performances. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy revealed vital structural information about layered black phosphorus. Lastly, these exotic materials based FETs were characterized for their high frequency performance, resulting in gigahertz range transit frequency and operated in a variety of important circuit configurations such as frequency multiplier, amplifier, mixer and AM demodulator.
Book Synopsis Organic Field Effect Transistors by : Ioannis Kymissis
Download or read book Organic Field Effect Transistors written by Ioannis Kymissis and published by Springer Science & Business Media. This book was released on 2008-12-25 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
Book Synopsis Submicrometer-gate Indium Phosphide-based Field-effect Transistors for High-frequency Applications by : Jente Benedict Kuang
Download or read book Submicrometer-gate Indium Phosphide-based Field-effect Transistors for High-frequency Applications written by Jente Benedict Kuang and published by . This book was released on 1990 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication and Characterization of Complementary Heterojunction Field Effect Transistors by : Terry E. McMahon
Download or read book Design, Fabrication and Characterization of Complementary Heterojunction Field Effect Transistors written by Terry E. McMahon and published by . This book was released on 1994 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III-Nitride Electronic Devices written by and published by Academic Press. This book was released on 2019-10-18 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Book Synopsis DC and RF Characterization of Gallium Indium Arsenide/aluminum Indium Arsenide/indium Phosphide Modulation Doped Field Effect Transistors for Millimeter Wave Device Applications by : Lauren Fay Palmateer
Download or read book DC and RF Characterization of Gallium Indium Arsenide/aluminum Indium Arsenide/indium Phosphide Modulation Doped Field Effect Transistors for Millimeter Wave Device Applications written by Lauren Fay Palmateer and published by . This book was released on 1989 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Heterostructure Field Effect Transistors and Their Millimeterwave Applications by : Niklas Rorsman
Download or read book Fabrication and Characterization of Heterostructure Field Effect Transistors and Their Millimeterwave Applications written by Niklas Rorsman and published by . This book was released on 1992 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Undoped Aluminum Gallium Nitride/gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications by : Yunju Sun
Download or read book Undoped Aluminum Gallium Nitride/gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications written by Yunju Sun and published by . This book was released on 2006 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, and Characterization of Modulation-doped Field-effect Transistors by : Hyunchang Park
Download or read book Design, Fabrication, and Characterization of Modulation-doped Field-effect Transistors written by Hyunchang Park and published by . This book was released on 1989 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book IETE Technical Review written by and published by . This book was released on 1997 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Simulation and Construction of Field Effect Transistors by : Dhanasekaran Vikraman
Download or read book Design, Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Book Synopsis Design, Fabrication, and Characterization of InAs/AlSb Heterojunction Field-effect Transistors by : James David Werking
Download or read book Design, Fabrication, and Characterization of InAs/AlSb Heterojunction Field-effect Transistors written by James David Werking and published by . This book was released on 1993 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
