Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Design And Performance Trade Offs In Igbt Modules For Hard And Soft Switching Applications
Download Design And Performance Trade Offs In Igbt Modules For Hard And Soft Switching Applications full books in PDF, epub, and Kindle. Read online Design And Performance Trade Offs In Igbt Modules For Hard And Soft Switching Applications ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Design and Performance Trade-offs in IGBT Modules for Hard- and Soft-switching Applications by : Sameer P. Pendharkar
Download or read book Design and Performance Trade-offs in IGBT Modules for Hard- and Soft-switching Applications written by Sameer P. Pendharkar and published by . This book was released on 1996 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Application-specific Performance Evaluation of Power Semiconductor Devices by : Malay Trivedi
Download or read book Application-specific Performance Evaluation of Power Semiconductor Devices written by Malay Trivedi and published by . This book was released on 1996 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs by :
Download or read book Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs written by and published by . This book was released on 2002 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book IGBT Modules written by Andreas Volke and published by . This book was released on 2012 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis IAS'93 by : IEEE Industry Applications Society. Meeting
Download or read book IAS'93 written by IEEE Industry Applications Society. Meeting and published by . This book was released on 1993 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Insulated Gate Bipolar Transistor IGBT Theory and Design by : Vinod Kumar Khanna
Download or read book Insulated Gate Bipolar Transistor IGBT Theory and Design written by Vinod Kumar Khanna and published by John Wiley & Sons. This book was released on 2004-04-05 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu
Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Book Synopsis Modeling and Simulation for Electric Vehicle Applications by : Mohamed Amine Fakhfakh
Download or read book Modeling and Simulation for Electric Vehicle Applications written by Mohamed Amine Fakhfakh and published by BoD – Books on Demand. This book was released on 2016-10-05 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents interesting topics from the area of modeling and simulation of electric vehicles application. The results presented by the authors of the book chapters are very interesting and inspiring. The book will familiarize the readers with the solutions and enable the readers to enlarge them by their own research. It will be useful for students of Electrical Engineering; it helps them solve practical problems.
Book Synopsis Power Electronics Handbook by : Muhammad H. Rashid
Download or read book Power Electronics Handbook written by Muhammad H. Rashid and published by Elsevier. This book was released on 2010-07-19 with total page 1189 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power electronics, which is a rapidly growing area in terms of research and applications, uses modern electronics technology to convert electric power from one form to another, such as ac-dc, dc-dc, dc-ac, and ac-ac with a variable output magnitude and frequency. Power electronics has many applications in our every day life such as air-conditioners, electric cars, sub-way trains, motor drives, renewable energy sources and power supplies for computers. This book covers all aspects of switching devices, converter circuit topologies, control techniques, analytical methods and some examples of their applications. * 25% new content* Reorganized and revised into 8 sections comprising 43 chapters* Coverage of numerous applications, including uninterruptable power supplies and automotive electrical systems* New content in power generation and distribution, including solar power, fuel cells, wind turbines, and flexible transmission
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga
Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2005 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Book Synopsis The IGBT Device by : B. Jayant Baliga
Download or read book The IGBT Device written by B. Jayant Baliga and published by William Andrew. This book was released on 2015-03-06 with total page 732 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
Book Synopsis High-Frequency Magnetic Components by : Marian K. Kazimierczuk
Download or read book High-Frequency Magnetic Components written by Marian K. Kazimierczuk and published by John Wiley & Sons. This book was released on 2011-08-24 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: If you are looking for a complete study of the fundamental concepts in magnetic theory, read this book. No other textbook covers magnetic components of inductors and transformers for high-frequency applications in detail. This unique text examines design techniques of the major types of inductors and transformers used for a wide variety of high-frequency applications including switching-mode power supplies (SMPS) and resonant circuits. It describes skin effect and proximity effect in detail to provide you with a sound understanding of high-frequency phenomena. As well as this, you will discover thorough coverage on: integrated inductors and the self-capacitance of inductors and transformers, with expressions for self-capacitances in magnetic components; criteria for selecting the core material, as well as core shape and size, and an evaluation of soft ferromagnetic materials used for magnetic cores; winding resistance at high frequencies; expressions for winding and core power losses when non-sinusoidal inductor or transformer current waveforms contain harmonics. Case studies, practical design examples and procedures (using the area product method and the geometry coefficient method) are expertly combined with concept-orientated explanations and student-friendly analysis. Supplied at the end of each chapter are summaries of the key concepts, review questions, and problems, the answers to which are available in a separate solutions manual. Such features make this a fantastic textbook for graduates, senior level undergraduates and professors in the area of power electronics in addition to electrical and computer engineering. This is also an inimitable reference guide for design engineers of power electronics circuits, high-frequency transformers and inductors in areas such as (SMPS) and RF power amplifiers and circuits.
Book Synopsis Application Manual Power Semiconductors by : Ulrich Nicolai
Download or read book Application Manual Power Semiconductors written by Ulrich Nicolai and published by . This book was released on 2011 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Highly Integrated Gate Drivers for Si and GaN Power Transistors by : Achim Seidel
Download or read book Highly Integrated Gate Drivers for Si and GaN Power Transistors written by Achim Seidel and published by Springer Nature. This book was released on 2021-03-31 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.
Book Synopsis Power Electronics Semiconductor Devices by : Robert Perret
Download or read book Power Electronics Semiconductor Devices written by Robert Perret and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.
