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Author : William L. Holstein
Publisher :
ISBN 13 :
Total Pages : 101 pages
Book Rating : 4.:/5 (355 download)
Download or read book Design and Modeling of Chemical Vapor Deposition Reactors written by William L. Holstein and published by . This book was released on 1992 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : William L. Holstein
Publisher :
ISBN 13 :
Total Pages : 101 pages
Book Rating : 4.:/5 (16 download)
Download or read book Design and Modelling of Chemical Vapor Deposition Reactors written by William L. Holstein and published by . This book was released on 1992 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sonya Denise McCall
Publisher :
ISBN 13 :
Total Pages : 146 pages
Book Rating : 4.:/5 (48 download)
Download or read book The Design, Construction and Three Dimensional Modeling of a High Pressure Organometallic Chemical Vapor Deposition Reactor written by Sonya Denise McCall and published by . This book was released on 2001 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yousef Ali Sharifi
Publisher :
ISBN 13 :
Total Pages : 266 pages
Book Rating : 4.:/5 (383 download)
Download or read book Multi-scale Modeling on Select Chemical Vapor Deposition Processes written by Yousef Ali Sharifi and published by . This book was released on 2008 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Femi Gabriel Uzuafa
Publisher :
ISBN 13 :
Total Pages : 92 pages
Book Rating : 4.:/5 (364 download)
Download or read book Modeling of a Photo-chemical Vapor Deposition Reactor written by Femi Gabriel Uzuafa and published by . This book was released on 1995 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Matthew T. Smith
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (539 download)
Download or read book Design and Development of a Silicon Carbide Chemical Vapor Deposition Reactor written by Matthew T. Smith and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The design and development of a reactor to make this process controlled and repeatable can be accomplished using theoretical and empirical tools. Fluid flow modeling, reactor sizing, low-pressure pumping and control are engineering concepts that were explored. Work on the design and development of an atmospheric pressure cold-wall CVD (APCVD) reactor will be presented. A detailed discussion of modifications to this reactor to permit hot-wall, low-pressure CVD (LPCVD) operation will then be presented. The consequences of this process variable change will be discussed as well as the necessary design parameters. Computational fluid dynamic (CFD) calculations, which predict the flow patterns of gases in the reaction tube, will be presented. Feasible CVD reactor design that results in laminar fluid flow control is a function of the prior mentioned techniques and will be presented.
Author : Stephen J. Cottrell
Publisher :
ISBN 13 :
Total Pages : 104 pages
Book Rating : 4.:/5 (872 download)
Download or read book Reactor Design for Chemical Vapor Deposition written by Stephen J. Cottrell and published by . This book was released on 1982 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling of Chemical Vapor Deposition Reactors for Semiconductor Fabrication written by and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Anthony C. Jones
Publisher : Royal Society of Chemistry
ISBN 13 : 0854044655
Total Pages : 600 pages
Book Rating : 4.8/5 (54 download)
Download or read book Chemical Vapour Deposition written by Anthony C. Jones and published by Royal Society of Chemistry. This book was released on 2009 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book is one of the most comprehensive overviews ever written on the key aspects of chemical vapour deposition processes and it is more comprehensive, technically detailed and up-to-date than other books on CVD. The contributing authors are all practising CVD technologists and are leading international experts in the field of CVD. It presents a logical and progressive overview of the various aspects of CVD processes. Basic concepts, such as the various types of CVD processes, the design of CVD reactors, reaction modelling and CVD precursor chemistry are covered in the first few"--Jacket
Author : Amit S. Inamdar
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (183 download)
Download or read book Modeling of a Modified Low Pressure Chemical Vapor Deposition Reactor written by Amit S. Inamdar and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jonathan Jilesen
Publisher :
ISBN 13 :
Total Pages : 107 pages
Book Rating : 4.:/5 (613 download)
Download or read book Multi-scale Modeling of Chemical Vapor Deposition written by Jonathan Jilesen and published by . This book was released on 2009 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: Multi-scale modeling of chemical vapor deposition (CVD) is a very broad topic because a large number of physical processes affect the quality and speed of film deposition. These processes have different length scales associated with them creating the need for a multi-scale model. The three main scales of importance to the modeling of CVD are the reactor scale, the feature scale, and the atomic scale. The reactor scale ranges from meters to millimeters and is called the reactor scale because it corresponds with the scale of the reactor geometry. The micrometer scale is labeled as the feature scale in this study because this is the scale related to the feature geometries. However, this is also the scale at which grain boundaries and surface quality can be discussed. The final scale of importance to the CVD process is the atomic scale. The focus of this study is on the reactor and feature scales with special focus on the coupling between these two scales. Currently there are two main methods of coupling between the reactor and feature scales. The first method is mainly applied when a modified line of sight feature scale model is used, with coupling occurring through a mass balance performed at the wafer surface. The second method is only applicable to Monte Carlo based feature scale models. Coupling in this second method is accomplished through a mass balance performed at a plane offset from the surface.
Author : Patricia S. Moravec
Publisher :
ISBN 13 :
Total Pages : 448 pages
Book Rating : 4.:/5 (175 download)
Download or read book Design and Characterization of a Chemical Vapor Deposition Reactor written by Patricia S. Moravec and published by . This book was released on 1987 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 32 pages
Book Rating : 4.:/5 (946 download)
Download or read book Modeling and Control of Advanced Chemical Vapor Deposition Processes: The Control of Defects in Mixed III-V Compound Heterstructures written by and published by . This book was released on 2000 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report progress on the construction and testing of two high pressure organometallic chemical vapor deposition (HPOMCVD) reactors, real time feedback control of pulsed chemical beam epitaxy, reduced order model feedback control design, defect formation in heteroepitaxial growth of films, and remote plasma processing.
Author : Daniel Dobkin
Publisher : Springer Science & Business Media
ISBN 13 : 9781402012488
Total Pages : 298 pages
Book Rating : 4.0/5 (124 download)
Download or read book Principles of Chemical Vapor Deposition written by Daniel Dobkin and published by Springer Science & Business Media. This book was released on 2003-04-30 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, and plasma discharge characteristics. In addition, the book includes discussions of practical films and reactors to help in the development of better processes and equipment. This book will assist workers new to chemical vapor deposition (CVD) to understand CVD reactors and processes and to comprehend and exploit the literature in the field. The book reviews several disparate fields with which many researchers may have only a passing acquaintance, such as heat and mass transfer, discharge physics, and surface chemistry, focusing on key issues relevant to CVD. The book also examines examples of realistic industrial reactors and processes with simplified analysis to demonstrate how to apply the principles to practical situations. The book does not attempt to exhaustively survey the literature or to intimidate the reader with irrelevant mathematical apparatus. This book is as simple as possible while still retaining the essential physics and chemistry. The book is generously illustrated to assist the reader in forming the mental images which are the basis of understanding.
Author : Himel Barua
Publisher :
ISBN 13 :
Total Pages : 152 pages
Book Rating : 4.:/5 (18 download)
Download or read book Computational Modeling of Chemical Vapor Deposition written by Himel Barua and published by . This book was released on 2016 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary objective of this study is to obtain the rate of Carbon deposition by chemical vapor deposition (CVD) process for material samples hanged in CVD reactor. The samples include net of bundles of fibers, semi-opened channel cut through rectangular sample and sample with circular holes. Momentum, continuity and transport equations for chemical species within gas phase and surface reactions have been solved numerically. For numerical solution by finite-volume method ANSYS FLUENT software and for geometric modeling and finite-volume meshing ANSYS Workbench software have been used. For numerical study two approaches have been taken. The first approach is a single-step solution where the flow field in reactor including flow field near and inside the sample have been resolved simultaneously. The second approach is a two-step solution, where the model has been divided into reactor-scale model and sample-scale model, where for each one a separate numerical mesh has been generated and a corresponding set of numerical parameters has been optimized separately for each model. The former process is a straightforward one that is applicable to a sample of any linear scale; however, the approach is computationally expensive relative to the latter one. The latter approach assumes that the scale of sample is small compared to the reactor scale and the two CFD models are solved sequentially. Results obtained by one-step and two-steps approaches are similar in terms of obtained CVD rates with some discrepancy caused by use of different numerical meshes and because in the latter model there is no feedback on the reactor flow field by the sample. For fibrous samples, CVD rates are obtained at the range of volume fractions. Obtained CVD rates are near-uniform along the fiber circumference and mostly sensitive to temperature field in reactor. For rectangular model with channel samples, the CVD rate is obtained at vertical orientations of the sample along the reactor axis for suspended sample with circular holes, CVD rates are obtained along the length of the hole. Near both entrances of each circular hole, vortices are generated which block the flow entering inside the hole. Because of diminished flowrate and corresponding advection inside the hole, C deposition is lowest at the center of the hole. In terms of effect on deposition, C2H2 and CH4 plays more significant role than other species. As C2H2 directly participates in surface reactions, higher concentration of C2H2 assures higher growth rate of C. CH4 in one of the primary species with largest initial mass fraction, participates in gas-phase reactions and is responsible for production of other intermediate gas species. Higher depletion of CH4 assures higher production of C2H2 and corresponding higher C deposition. This observation is similar for all the substrates.
Author :
Publisher :
ISBN 13 :
Total Pages : 33 pages
Book Rating : 4.:/5 (684 download)
Download or read book Massively Parallel Computation of 3D Flow and Reactions in Chemical Vapor Deposition Reactors written by and published by . This book was released on 1997 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: Computer modeling of Chemical Vapor Deposition (CVD) reactors can greatly aid in the understanding, design, and optimization of these complex systems. Modeling is particularly attractive in these systems since the costs of experimentally evaluating many design alternatives can be prohibitively expensive, time consuming, and even dangerous, when working with toxic chemicals like Arsine (AsH3): until now, predictive modeling has not been possible for most systems since the behavior is three-dimensional and governed by complex reaction mechanisms. In addition, CVD reactors often exhibit large thermal gradients, large changes in physical properties over regions of the domain, and significant thermal diffusion for gas mixtures with widely varying molecular weights. As a result, significant simplifications in the models have been made which erode the accuracy of the models' predictions. In this paper, the authors will demonstrate how the vast computational resources of massively parallel computers can be exploited to make possible the analysis of models that include coupled fluid flow and detailed chemistry in three-dimensional domains. For the most part, models have either simplified the reaction mechanisms and concentrated on the fluid flow, or have simplified the fluid flow and concentrated on rigorous reactions. An important CVD research thrust has been in detailed modeling of fluid flow and heat transfer in the reactor vessel, treating transport and reaction of chemical species either very simply or as a totally decoupled problem. Using the analogy between heat transfer and mass transfer, and the fact that deposition is often diffusion limited, much can be learned from these calculations; however, the effects of thermal diffusion, the change in physical properties with composition, and the incorporation of surface reaction mechanisms are not included in this model, nor can transitions to three-dimensional flows be detected.
Author : Sanjay Patnaik
Publisher :
ISBN 13 :
Total Pages : 664 pages
Book Rating : 4.:/5 (221 download)
Download or read book Modelling of Transport Processes in Chemical Vapor Deposition Reactors written by Sanjay Patnaik and published by . This book was released on 1989 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
