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Design And Methodologies Of Cmos Compatible Isfet Ion Sensitive Field Effect Transistor For Brain Monitoring In Head Injury Patients
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Book Synopsis Design and Methodologies of CMOS Compatible Isfet (ion Sensitive Field Effect Transistor) for Brain Monitoring in Head Injury Patients by : Liby Sudakov-Boreysha
Download or read book Design and Methodologies of CMOS Compatible Isfet (ion Sensitive Field Effect Transistor) for Brain Monitoring in Head Injury Patients written by Liby Sudakov-Boreysha and published by . This book was released on 2005 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Methodology of Isfet (ion Sensitive Field Effect Transistor) Microsystems for Bio-telemetry by : Arkadiy Morgenshtein
Download or read book Design and Methodology of Isfet (ion Sensitive Field Effect Transistor) Microsystems for Bio-telemetry written by Arkadiy Morgenshtein and published by . This book was released on 2003 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Sensitive Field Effect Transistors in Standard CMOS for Brain Monitoring by : Claudio G. Jakobson
Download or read book Ion Sensitive Field Effect Transistors in Standard CMOS for Brain Monitoring written by Claudio G. Jakobson and published by . This book was released on 2001 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion-sensitive Field Effect Transistor (ISFET) for MEMS Multisensory Chips at RIT by : Murat Baylav
Download or read book Ion-sensitive Field Effect Transistor (ISFET) for MEMS Multisensory Chips at RIT written by Murat Baylav and published by . This book was released on 2010 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This study involves the design and fabrication of an Ion-Sensitive Field Effect Transistor (ISFET), which is aimed to be incorporated into the multisensory chips fabricated at RIT. ISFETs are used for various purposes in biomedical, medicine, and chemical applications and have advantages such as small size, low power consumption, robustness, and fast response time, over the ion-selective electrode (ISE) counterparts. The capability of fabricating ISFETs in a standard CMOS process let them to be used in sensor systems together with the dedicated signal processing circuitry which in turn makes portable applications possible. The ISFET fabricated in this study have a SiO2 gate oxide and on top of that a Si3N4 layer. The latter layer, in addition to passivating the device, serves as a pH sensitive membrane. The overall process has 5 mask levels and the electrical tests, which were performed using buffer solutions with varying pH values, indicated that the transistor can be employed to measure the pH of solutions. ISFETs were also tested against environmental conditions such as temperature, long term exposure to various pH-valued solutions and it is found out that the FETs are quite robust in terms of temperature stability and long term drift. In addition to their pH sensing properties, these devices were also taken one step ahead to sense chloride ion (Cl-) concentration via preparing a Cl--sensitive membrane stacked on top of the Si3N4 layer. Electrical tests, which were performed in solutions with various Cl- concentrations, showed that the modified ISFETs are also Cl- sensitive."--Abstract.
Book Synopsis The Physics and Technology of the Ion Sensitive Field Effect Transistor (ISFET) by : Hon-Sum Philip Wong
Download or read book The Physics and Technology of the Ion Sensitive Field Effect Transistor (ISFET) written by Hon-Sum Philip Wong and published by . This book was released on 1988 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Robust Low Power CMOS Methodologies for ISFETs Instrumentation by : Wai Pan Chan
Download or read book Robust Low Power CMOS Methodologies for ISFETs Instrumentation written by Wai Pan Chan and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Design and Modeling of Buried-channel Ion Sensitive Field Effect Transistor (ISFET) by : Roman Novitski
Download or read book Electrical Design and Modeling of Buried-channel Ion Sensitive Field Effect Transistor (ISFET) written by Roman Novitski and published by . This book was released on 2008 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Design and Modeling of Buried-channel Ion Sensitive Field Effect Transistor (ISFET) Sensors : by : Roman Novitski
Download or read book Electrical Design and Modeling of Buried-channel Ion Sensitive Field Effect Transistor (ISFET) Sensors : written by Roman Novitski and published by . This book was released on 2008 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development and Fabrication of Ion-sensitive Field Effect Transistor (ISFET) for PH Detection, DNA Immobilization and Hybridization by :
Download or read book Development and Fabrication of Ion-sensitive Field Effect Transistor (ISFET) for PH Detection, DNA Immobilization and Hybridization written by and published by . This book was released on 2013 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis describes the design, fabrication and characterization of ISFET for pH detection, DNA immobilization and hybridization.
Book Synopsis Characterization, Modeling, and Correction of Threshold Voltage Instability in PH-sensitive Ion-selective Field Effect Transistors (ISFET's) by : Shahriar Jamasb
Download or read book Characterization, Modeling, and Correction of Threshold Voltage Instability in PH-sensitive Ion-selective Field Effect Transistors (ISFET's) written by Shahriar Jamasb and published by . This book was released on 1998 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Integrated Ion Sensitive Field Effect Transistor (ISFET) Microchemical Sensor and Electrowetting on Dielectric (EWOD) Microfluidic Actuator Using Ultra-thin Zirconium Oxide and Hafnium Oxide Films by : Vladan Jankovic
Download or read book Integrated Ion Sensitive Field Effect Transistor (ISFET) Microchemical Sensor and Electrowetting on Dielectric (EWOD) Microfluidic Actuator Using Ultra-thin Zirconium Oxide and Hafnium Oxide Films written by Vladan Jankovic and published by . This book was released on 2006 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Integrated Circuit Design for Miniaturized, Trackable, Ultrasound Based Biomedical Implants by : Yihan Zhang
Download or read book Integrated Circuit Design for Miniaturized, Trackable, Ultrasound Based Biomedical Implants written by Yihan Zhang and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Using an ion-sensitive field effect transistor (ISFET) and reference field effect transistor pair (REFET), the IC requires minimum additional post fabrication to deliver 10-bit resolution pH readouts at an end-to-end sensitivity of 65.8 LSB/pH. When working as a standalone device, this work advances the state-of-the-art of ISFET based pH sensor design. With an addition of 0.46 mm2 of area, it is possible to integrate it with the ultrasound sonography compatible implant platform. This potential integration will further advance the vision of the augmented ultrasonography: real-time display of physiological information in a B-mode film, with the help from a distributed bio-sensor system for deep-tissue physiology monitoring.
Book Synopsis CMOS Readout Circuit Developments for Ion Sensitive Field Effect Transistor Based Sensor Applications by : Wen-Yaw Chung
Download or read book CMOS Readout Circuit Developments for Ion Sensitive Field Effect Transistor Based Sensor Applications written by Wen-Yaw Chung and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS Readout Circuit Developments for Ion Sensitive Field Effect Transistor Based Sensor Applications.
Book Synopsis Ion Sensitive Field Effect Transistors Applied to the Measurement of the PH of Brines by :
Download or read book Ion Sensitive Field Effect Transistors Applied to the Measurement of the PH of Brines written by and published by . This book was released on with total page 91 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ability to measure the pH (the negative logarithm of the hydrogen ion activity) of harsh fluids such as geothermal oil field brines is important, since pH is a fundamental property; as one chemist stated: very often pH is a critical test because its accuracy lays the foundation for other measurements''. In our research, we focus on the analysis of brines similar to those found in underground geothermal reservoirs. Since the brines are deep under the ground, the values of the pressure and the temperature are high (up to 14 Mpa and 150[degrees]C); therefore the usual methods of pH measurement, e.g., glass electrode, are not applicable. The hydrogen ion sensitive ISFET (Ion Selective Field Effect Transistor) was studied as a pH sensor in this research. An ISFET can detect the electrochemical potential difference between the solution and the semiconductor due to the concentration of H[sup +] ions in the solution. Because of its solid state construction, an ISFET should work properly under high pressure and high temperature conditions. Earlier results, have indicated that it is possible to use ISFETs under the harsh conditions presented by geothermal brines.
Book Synopsis The ISFET in Electrochemistry by : Nicolaas Frans de Rooij (Chemiker, Niederlande)
Download or read book The ISFET in Electrochemistry written by Nicolaas Frans de Rooij (Chemiker, Niederlande) and published by . This book was released on 1978 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The isfet in electrochemistry by : Nicolaas Frans de Rooij
Download or read book The isfet in electrochemistry written by Nicolaas Frans de Rooij and published by . This book was released on 1978 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Fabrication of an Ion Sensitive Field Effect Transistor and Readout Circuit Using a Commercial TSMC 65nm Process by : Gueorgui Savadjiev
Download or read book Design and Fabrication of an Ion Sensitive Field Effect Transistor and Readout Circuit Using a Commercial TSMC 65nm Process written by Gueorgui Savadjiev and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "This thesis presents the design considerations to building an implantable pH sensor for biomedical applications using solid-state ion-sensitive field effect transistors (ISFET), and the design and testing of an electronic readout circuit using the TSMC 65nm process. The use of ISFET-based pH sensors is motivated by the difficulty of achieving miniaturization with common pH glass electrodes. In this work, a floating gate ISFET structure had to be used instead of the traditional ISFET structure. This leads to design challenges related to loading effects and leakage currents on the floating gate. A systematic investigation of different readout circuit techniques to resolve the problems was conducted, and three main designs were proposed, analyzed and compared. Simulations investigated the correct operation of the designs. A model of the ISFET was implemented in veriloga for simulation purposes. An IC was designed and fabricated, containing two identical op-amps and switches that could be used to implement the circuit in practice. Laboratory experiments were conducted simulating the pH and bulk potentials using a single power supply connected to a capacitance emulating the sensing dielectric. The experiments also investigated the implementation of a differential readout circuit. It was observed that the leakage and loading effects were significant, so that the simplest circuit could not work in practice. The differential configuration showed a significant reduction in common-mode sensitivity to bulk potential variation"--
