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Deposition And Characterization Of Cemium Oxide Epitaxial Films On Silicon Substrates For Electronic Applications
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Book Synopsis Deposition and Characterization of Cerium Oxide Epitaxial Films on Silicon Substrates for Electronic Applications by : Ahmed Hisham E. A. Morshed
Download or read book Deposition and Characterization of Cerium Oxide Epitaxial Films on Silicon Substrates for Electronic Applications written by Ahmed Hisham E. A. Morshed and published by . This book was released on 1997 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis deposition and characterization of cemium oxide epitaxial films on silicon substrates for electronic applications by : morshed ahmed hisham ea
Download or read book deposition and characterization of cemium oxide epitaxial films on silicon substrates for electronic applications written by morshed ahmed hisham ea and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Epitaxial Oxide Thin Films by : Ashish Garg
Download or read book Growth and Characterization of Epitaxial Oxide Thin Films written by Ashish Garg and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device within a film without patterning it, by locally creating superconducting regions (e.g. twins) within an otherwise defect free film by reducing or doping the film with Na. Films were deposited by reactive magnetron sputtering at various temperatures on single crystal SrTiO3 (100) and R-sapphire substrates. X-ray diffraction studies showed that the optimised films were highly (001) oriented, quality of epitaxy improving with decreasing deposition temperature. AFM studies revealed columnar growth of these films. Films were heat treated with Na vapour in order to reduce or dope them with Na. Low temperature measurements of the reduced films did not show existence of any superconductivity. SBT is a ferroelectric oxide and its thin films are attractive candidates for non-volatile ferroelectric random access memory (FRAM) applications. High structural anisotropy leads to a high degree of anisotropy in its ferroelectric properties which makes it essential to study epitaxial SBT films of different orientations. In this study, SBT films of different orientations were deposited on different single crystal substrates by pulsed laser ablation. Highly epitaxial c-axis oriented and smooth SBT films were deposited on SrTiO3 (100) substrates. AFM studies revealed the growth of these films by 3-D Stranski-Krastanov mode. However, these films did not exhibit any ferroelectric activity. Highly epitaxial (116)-oriented films were deposited on SrTiO3 (110) substrates. These films were also very smooth with root mean square (RMS) roughness of 15-20 Å. Films deposited on TiO2 (110) were partially a-/b-axis oriented and showed the formation of c-axis oriented SBT and many impurities. Completely a-/b-axis oriented SBT films were deposited on LaSrAlO4 (110) substrates. Films deposited at non-optimal growth temperatures showed the formation of many impurities. Attempts were also made towards depositing Sr2RuO4 films on LaSrAlO4 (110) substrates, which can act as a bottom electrode for ferroelectric SBT films.
Book Synopsis Fabrication and Characterization of Epitaxial Yba2cu3oy Thin Films on Double-Buffered Silicon Substrates by : Ho-Yi Eric Wong
Download or read book Fabrication and Characterization of Epitaxial Yba2cu3oy Thin Films on Double-Buffered Silicon Substrates written by Ho-Yi Eric Wong and published by . This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Fabrication and Characterization of Epitaxial YBa2Cu3Oy Thin Films on Double-buffered Silicon Substrates" by Ho-yi, Eric, Wong, 黃灝頤, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled FABRICATION AND CHARACTERIZATION OF EPITAXIAL YBa Cu O 2 3 y THIN FILMS ON DOUBLE-BUFFERED SILICON SUBSTRATES submitted by WONG HO YI ERIC for the degree of Master of Philosophy at The University of Hong Kong in August 2003 The discovery of perovskite copper oxide YBa Cu O (YBCO) has aroused a 2 3 y constantly increasing interest in this material due to the potential applications in microelectronics devices, such as microwave elements, multilayer junctions, etc. Suitable substrates with a low dielectric constant, good high frequency properties, large size and low cost are necessary. Silicon substrates are widely used and well developed in the semiconductor industry and microwave device applications. Therefore, successful fabrication of high T YBCO films on silicon is of interest for various applications of hybrid superconductor-semiconductor devices and interconnected circuits. In such applications, the epitaxial growth of YBCO on silicon is extremely important. This thesis presents a systematic investigation of the fabrication and characterization of epitaxial YBCO thin films on silicon substrates with a double buffer of Eu CuO (ECO)/YSZ(Yttria-Stabilized Zirconia). Silicon (001) substrates 2 4 were prepared using a chemical etch by dilute HF acid prior to thin film deposition. The YBCO thin films were grown via an entirely in situ process using an on-axis rf magnetron sputtering method with optimized deposition parameters including the deposition temperature, operating pressure and partial oxygen pressure. The crystallinity, surface morphology, electrical properties, and interface of the obtained YBCO/ECO/YSZ thin films were studied by x-ray diffraction, surface profiler, atomic force microscope, optical microscope, standard dc four-probe measurements and small angle x-ray reflection. The X-ray diffraction patterns showed that all the thin films were highly c-axis oriented. A full width of 0.69 at half maximum of the YBCO(005) peak was obtained. This was smaller than reported in previous studies of YBCO thin films on double buffered silicon or nickel substrates. The atomic force microscopy image showed that the ECO buffer surface was flat and smooth. The average roughness over a wide scanning region of 2000m was less than 25nm. The optical microscope images showed that the surface morphology of the grown YBCO thin films was significantly improved by the ECO buffer layer since ECO had a very stable 214-T' crystal structure and very small lattice mismatch with YBCO. The YBCO/ECO/YSZ multilayers were further characterized by small angle x-ray reflection. The surface roughness of the YBCO layers decreased when an ECO buffer was added. No intermediate layer was found at the YBCO/ECO and ECO/YSZ interfaces. The results suggest that ECO is chemically compatible with YBCO and YSZ. The superconductivity of YBCO films was significantly improved by the ECO/YSZ double buffer. This is indicated by the fact that YBCO thin films on silicon substrates with an ECO/YSZ double buffer showed a higher T than that grown on YSZ/Si without the ECO layer. The advantages of using ECO/YSZ double buffer layers in deposition of YBCO on silicon were clearly demonstrated. It would provide a good basis for the potential applications of YBCO on other semiconductors, metallic or me
Book Synopsis Characterization of Epitaxial Semiconductor Films by : Henry Kressel
Download or read book Characterization of Epitaxial Semiconductor Films written by Henry Kressel and published by Elsevier Science & Technology. This book was released on 1976 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Bath Deposition and Electrodeposition of Epitaxial Semiconductor Materials for Application in Photovoltaic Devices by : Guojun Mu
Download or read book Chemical Bath Deposition and Electrodeposition of Epitaxial Semiconductor Materials for Application in Photovoltaic Devices written by Guojun Mu and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This dissertation investigates the chemical bath deposition of zinc oxide and electrodeposition of cuprous iodide on polycrystalline and single crystal substrates. Paper I describes the chemical bath deposition and characterization of titled epitaxial zinc oxide nanospears on Si(001) single crystal substrate. In Paper II, the chemical bath deposition of zinc oxide nanospears from highly alkaline solutions is discussed in detail, including a thermodynamic calculation of saturation and speciation of Zn(II) in aqueous solution, and a kinetic study of the deposition process. In this paper the epitaxial zinc oxide is reported grown on Au(100), (110), and (111) single crystals. Paper III involves the electrodeposition of epitaxial cuprous iodide thin films on single crystalline Au(100) substrate from a slightly acidic Cu(II)-EDTA-KI solution. The electronic property of the so deposited CuI film is estimated by photoluminescence spectroscopy. This dissertation also includes three appendices. The first two appendices cover the supplementary materials for Papers I and II. The third appendix has unpublished results on thermal transformation of electrodeposited magnetite and ferrihydrite into hematite"--Abstract, leaf iv
Book Synopsis Epitaxial Silicon Technology by : B Baliga
Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Book Synopsis Growth and Characterization of Epitaxial 3C-SiC Films on Silicon for Electronic Applications by : Chacko Jacob
Download or read book Growth and Characterization of Epitaxial 3C-SiC Films on Silicon for Electronic Applications written by Chacko Jacob and published by . This book was released on 1997 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Integration of Epitaxial Piezoelectric Thin Films on Silicon by : Shi Yin
Download or read book Integration of Epitaxial Piezoelectric Thin Films on Silicon written by Shi Yin and published by . This book was released on 2013 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, piezoelectric materials, like lead titanate zirconate Pb(ZrxTi1-x)O3 (PZT), zinc oxide ZnO, and the solid solution Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), increasingly receive intensive studies because of their innovative applications in the microelectromechanical systems (MEMS). In order to integrate them on silicon substrate, several preliminaries must be taken into considerations, e.g. buffer layer, bottom electrode. In this thesis, piezoelectric films (PZT and PMN-PT) have been successfully epitaxially grown on silicon and SOI (silicon-on-insulator) in the form of single crystal by sol-gel process. In fact, recent studies show that single crystalline films seem to possess the superior properties than that of polycrystalline films, leading to an increase of the performance of MEMS devices. The first objective of this thesis was to realize the epitaxial growth of single crystalline film of piezoelectric materials on silicon. The use of a buffer layer of gadolinium oxide(Gd2O3) or strontium titanate (SrTiO3 or STO) deposited by molecular beam epitaxy (MBE) has been studied in detail to integrate epitaxial PZT and PMN-PT films on silicon. For Gd2O3/Si(111) system, the study of X-ray diffraction (XRD) on the growth of PZT film shows that the film is polycrystalline with coexistence of the nonferroelectric parasite phase, i.e. pyrochlore phase. On the other hand, the PZT film deposited on STO/Si(001) substrate is successfully epitaxially grown in the form of single crystalline film. In order to measure the electrical properties, a layer of strontium ruthenate (SrRuO3 or SRO) deposited by pulsed laser deposition (PLD) has been employed for bottom electrode due to its excellent conductivity and perovskite crystalline structure similar to that of PZT. The electrical characterization on Ru/PZT/SRO capacitors demonstrates good ferroelectric properties with the presence of hysteresis loop. Besides, the relaxor ferroelectric PMN-PT has been also epitaxially grown on STO/Si and confirmed by XRD and transmission electrical microscopy (TEM). This single crystalline film has the perovskite phase without the appearance of pyrochlore. Moreover, the study of infrared transmission using synchrotron radiation has proven a diffused phase transition over a large range of temperature, indicating a typical relaxor ferroelectric material. The other interesting in the single crystalline PZT films deposited on silicon and SOI is to employ them in the application of MEMS devices, where the standard silicon techniques are used. The microfabrication process performed in the cleanroom has permitted to realize cantilevers and membranes in order to mechanically characterize the piezoelectric layers. Mechanical deflection under the application of an electric voltage could be detected by interferometry. Eventually, this characterization by interferometry has been studied using the modeling based on finite element method and analytic method. In the future, it will be necessary to optimize the microfabrication process of MEMS devices based on single crystalline piezoelectric films in order to ameliorate the electromechanical performance. Finally, the characterizations at MEMS device level must be developed for their utilization in the future applications.
Author :Satishchandra B. Ogale Publisher :Springer Science & Business Media ISBN 13 :9780387258027 Total Pages :440 pages Book Rating :4.2/5 (58 download)
Book Synopsis Thin Films and Heterostructures for Oxide Electronics by : Satishchandra B. Ogale
Download or read book Thin Films and Heterostructures for Oxide Electronics written by Satishchandra B. Ogale and published by Springer Science & Business Media. This book was released on 2005-07-15 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1965 with total page 1068 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of the electrical properties of epitaxial silicon films grown by remote plasma-enhanced chemical vapor deposition by : Rajan Sharma
Download or read book Characterization of the electrical properties of epitaxial silicon films grown by remote plasma-enhanced chemical vapor deposition written by Rajan Sharma and published by . This book was released on 1996 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Solution Deposition of Functional Oxide Thin Films by : Theodor Schneller
Download or read book Chemical Solution Deposition of Functional Oxide Thin Films written by Theodor Schneller and published by Springer Science & Business Media. This book was released on 2014-01-24 with total page 801 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1998 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Process for Depositing an Oxide Epitaxially Onto a Silicon Substrate and Structures Prepared with the Process by :
Download or read book Process for Depositing an Oxide Epitaxially Onto a Silicon Substrate and Structures Prepared with the Process written by and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.
Book Synopsis Advances in Research and Development by :
Download or read book Advances in Research and Development written by and published by Academic Press. This book was released on 1997-11-14 with total page 331 pages. Available in PDF, EPUB and Kindle. Book excerpt: Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
Book Synopsis Study of Epitaxial Thin Films of Yba2cu3o7-[Delta] on Silicon with Different Buffer Layers by : Engang Fu
Download or read book Study of Epitaxial Thin Films of Yba2cu3o7-[Delta] on Silicon with Different Buffer Layers written by Engang Fu and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Study of Epitaxial Thin Films of YBa2Cu3O7-[delta] on Silicon With Different Buffer Layers" by Engang, Fu, 付恩剛, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled STUDY OF EPITAXIAL THIN FILMS OF YBa Cu O ON 2 3 7-δ SILICON WITH DIFFERENT BUFFER LAYERS submitted by Fu Engang for the degree of Master of Philosophy at The University of Hong Kong in August 2005 Silicon is the most widely used semiconductor in the microelectronic industry. Highly epitaxial thin films of YBa Cu O (YBCO) grown on Si wafers are of 2 3 7-δ special interest for development of superconductor/semiconductor hybrid microelectronic devices and circuits. However, severe interaction between Si and YBCO layer, large mismatch in their lattice constant, and strain due to different thermal expansion often degrade the crystallinity and superconductivity of the grown YBCO layers. In this study, yttria-stabilized zirconia (YSZ) and Eu CuO (ECO) 2 4 were introduced as double buffer layers to improve the growth and properties of the YBCO thin films grown on silicon. Preparation and characterization of epitaxial YBCO/ECO/YSZ/Si multilayer structures were studied. YBCO thin films and the double buffer layers of ECO/YSZ were deposited on the silicon (100) substrate by the pulsed laser deposition (PLD) method. Firstly, the YSZ thin layer was grown epitaxially on silicon (100) substrate to separate YBCO from the Si substrate. Effects of substrate temperature and operating gas pressure on the structure and surface roughness of YSZ thin film were examined and the optimum deposition parameters were determined based on experimental results and comprehensive analysis. X-Ray diffraction (XRD) patterns and rocking curve revealed an epitaxial growth with a perfect c-axis orientation. The YSZ thin films grown on silicon substrate have smooth surface, providing a base on which ECO and YBCO thin film can be grown epitaxially. To further improve the quality of YBCO films, an additional layer of ECO with very stable 214-T' crystal structure was inserted between YBCO and YSZ/Si. The influence of substrate temperature and oxygen gas pressure on the properties of ECO thin films grown on YSZ/Si were experimentally analyzed and the growth conditions were optimized. Finally, the epitaxial YBCO thin films were grown on silicon substrate with double buffer layers of ECO/YSZ. The influences of substrate temperature, oxygen gas pressure and different buffer layers on the properties of YBCO thin films were studied. It was found that the crystal structure, surface roughness and superconductivity of YBCO films could be significantly improved by adding such a double buffer of ECO/YSZ. The quality of the YBCO thin films has been significantly enhanced when compared with that grown on Si with a single YSZ buffer layer and with double buffer layers of Nd CuO (NCO)/YSZ. Such highly 2 4 epitaxial thin films of YBCO grown on silicon should be of great interest for various applications including high-frequency elements, millimeter-wave receivers, and superconducting quantum interference devices. DOI: 10.5353/th_b3637488 Subjects: Thin films Silicon Epitaxy
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