Defects In Sic Single Crystals And Their Influence On Device Performance

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Defects in SiC Single Crystals and Their Influence on Device Performance

Author :
Publisher :
ISBN 13 :
Total Pages : 5 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Defects in SiC Single Crystals and Their Influence on Device Performance by :

Download or read book Defects in SiC Single Crystals and Their Influence on Device Performance written by and published by . This book was released on 1998 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project constituted an extensive program of research aimed at applying the techniques of Synchrotron White Beam X-ray Topography (SWBXT), Nomarski Optical Microscopy, Stereo Transmission Optical Microscopy and Scanning Electron Microscopy to the detailed analysis of defect structures in SiC crystals of various polytypes, and to determine how these defect structures can influence the performance of various kinds of device manufactured therein. It has served to establish a heightened awareness of the importance of a detailed understanding of growth defect microstructure to the future of SiC technology. Results obtained in this project have helped prioritize SiC crystal quality improvements. Two kinds of defect have been identified in 6H and 4H-SiC, basal plane dislocations, and dislocations with mostly screw component lying either at a small angle, or parallel, to the c-axis, with screw component of Burgers vector being equal to nc, where c is the lattice parameter. In 6H, dislocations with b greater than or equal 2c have hollow cores, the diameters of which conform to the theory of F.C. Frank. The same is true for dislocations in 4H with b greater than equal 3c. Preliminary results show that all such dislocations (from n=1 to n>8) can modify the I-V characteristics of diodes, giving rise to higher leakage currents and premature breakdown point-failures.

Study of Defect Structures in 6H-SiC A/m-plane Pseudofiber Crystals Grown by Hot-wall CVD Epitaxy

Author :
Publisher :
ISBN 13 :
Total Pages : 9 pages
Book Rating : 4.:/5 (965 download)

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Book Synopsis Study of Defect Structures in 6H-SiC A/m-plane Pseudofiber Crystals Grown by Hot-wall CVD Epitaxy by :

Download or read book Study of Defect Structures in 6H-SiC A/m-plane Pseudofiber Crystals Grown by Hot-wall CVD Epitaxy written by and published by . This book was released on 2015 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed-epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed-homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.

Defect and Impurity Engineered Semiconductors and Devices

Author :
Publisher :
ISBN 13 :
Total Pages : 520 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Defect and Impurity Engineered Semiconductors and Devices written by and published by . This book was released on 2002 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Defect and Impurity Engineered Semiconductors and Devices III: Volume 719

Author : S. Ashok
Publisher :
ISBN 13 :
Total Pages : 522 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 by : S. Ashok

Download or read book Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 written by S. Ashok and published by . This book was released on 2002-08-09 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.

Radiation Effects in Silicon Carbide

Author : A.A. Lebedev
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291117
Total Pages : 172 pages
Book Rating : 4.9/5 (452 download)

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Book Synopsis Radiation Effects in Silicon Carbide by : A.A. Lebedev

Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.

Silicon Carbide

Author : Peter Friedrichs
Publisher : John Wiley & Sons
ISBN 13 : 3527629068
Total Pages : 528 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Silicon Carbide by : Peter Friedrichs

Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Author :
Publisher :
ISBN 13 :
Total Pages : 12 pages
Book Rating : 4.:/5 (317 download)

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Book Synopsis Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices by :

Download or read book Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices written by and published by . This book was released on 1999 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Technology of Si, Ge, and SiC / Technologie Von Si, Ge und SiC

Author : W. Dietze
Publisher : Springer Science & Business Media
ISBN 13 : 9783540114741
Total Pages : 680 pages
Book Rating : 4.1/5 (147 download)

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Book Synopsis Technology of Si, Ge, and SiC / Technologie Von Si, Ge und SiC by : W. Dietze

Download or read book Technology of Si, Ge, and SiC / Technologie Von Si, Ge und SiC written by W. Dietze and published by Springer Science & Business Media. This book was released on 1983-12 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride and Silicon Carbide Power Technologies

Author : K. Shenai
Publisher : The Electrochemical Society
ISBN 13 : 1607682621
Total Pages : 361 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies by : K. Shenai

Download or read book Gallium Nitride and Silicon Carbide Power Technologies written by K. Shenai and published by The Electrochemical Society. This book was released on 2011 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide

Author : Wolfgang J. Choyke
Publisher : Springer Science & Business Media
ISBN 13 : 3642188702
Total Pages : 911 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Silicon Carbide by : Wolfgang J. Choyke

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Physics of Semiconductor Devices

Author : K. N. Bhat
Publisher : Alpha Science Int'l Ltd.
ISBN 13 : 9788173195679
Total Pages : 1310 pages
Book Rating : 4.1/5 (956 download)

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Book Synopsis Physics of Semiconductor Devices by : K. N. Bhat

Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.

Single Crystals of Electronic Materials

Author : Roberto Fornari
Publisher : Woodhead Publishing
ISBN 13 : 008102097X
Total Pages : 596 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Single Crystals of Electronic Materials by : Roberto Fornari

Download or read book Single Crystals of Electronic Materials written by Roberto Fornari and published by Woodhead Publishing. This book was released on 2018-09-18 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. Presents the latest research and most comprehensive overview of both standard and novel semiconductors Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond

Silicon Carbide and Related Materials 2021

Author : Jean François Michaud
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035738246
Total Pages : 728 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Silicon Carbide and Related Materials 2021 by : Jean François Michaud

Download or read book Silicon Carbide and Related Materials 2021 written by Jean François Michaud and published by Trans Tech Publications Ltd. This book was released on 2022-05-31 with total page 728 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021)

International School on Crystal Growth of Technologically Important Electronic Materials

Author : K. Byrappa
Publisher : Allied Publishers
ISBN 13 : 9788177643756
Total Pages : 666 pages
Book Rating : 4.6/5 (437 download)

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Book Synopsis International School on Crystal Growth of Technologically Important Electronic Materials by : K. Byrappa

Download or read book International School on Crystal Growth of Technologically Important Electronic Materials written by K. Byrappa and published by Allied Publishers. This book was released on 2003 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Defect Recognition and Image Processing in Semiconductors 1997

Author : J. Doneker
Publisher : Routledge
ISBN 13 : 1351456466
Total Pages : 552 pages
Book Rating : 4.3/5 (514 download)

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Book Synopsis Defect Recognition and Image Processing in Semiconductors 1997 by : J. Doneker

Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.

Silicon Carbide

Author : Moumita Mukherjee
Publisher : BoD – Books on Demand
ISBN 13 : 9533079681
Total Pages : 562 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Silicon Carbide by : Moumita Mukherjee

Download or read book Silicon Carbide written by Moumita Mukherjee and published by BoD – Books on Demand. This book was released on 2011-10-10 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.

The VLSI Handbook

Author : Wai-Kai Chen
Publisher : CRC Press
ISBN 13 : 1420005960
Total Pages : 2320 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis The VLSI Handbook by : Wai-Kai Chen

Download or read book The VLSI Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2018-10-03 with total page 2320 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.