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Author : Mohamed Elsayed
Publisher :
ISBN 13 : 9783659452192
Total Pages : 0 pages
Book Rating : 4.4/5 (521 download)
Download or read book Defect Studies in III-V Semiconductors by Positron Annihilation written by Mohamed Elsayed and published by . This book was released on 2013-09-13 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Reinhard Krause-Rehberg
Publisher : Springer Science & Business Media
ISBN 13 : 9783540643715
Total Pages : 408 pages
Book Rating : 4.6/5 (437 download)
Download or read book Positron Annihilation in Semiconductors written by Reinhard Krause-Rehberg and published by Springer Science & Business Media. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Author : Joseph Mahony
Publisher :
ISBN 13 :
Total Pages : 174 pages
Book Rating : 4.:/5 (392 download)
Download or read book Point Defect Characterization of III-V Semiconductor Wafers Using Positron Annihilation Spectroscopy written by Joseph Mahony and published by . This book was released on 1996 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Aihong Deng
Publisher :
ISBN 13 : 9781374780705
Total Pages : pages
Book Rating : 4.7/5 (87 download)
Download or read book Some Defect Studies on the Compound Semiconductors GAAS, Inp and Sic Using Positron Annihilation Spectroscopy written by Aihong Deng and published by . This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Some Defect Studies on the Compound Semiconductors GaAs, InP and SiC Using Positron Annihilation Spectroscopy" by Aihong, Deng, 鄧愛紅, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3124012 Subjects: Semiconductors - Spectra Positron annihilation
Author : Aihong Deng
Publisher :
ISBN 13 :
Total Pages : 306 pages
Book Rating : 4.:/5 (549 download)
Download or read book Some Defect Studies on the Compound Semiconductors GaAs, InP and SiC Using Positron Annihilation Spectroscopy written by Aihong Deng and published by . This book was released on 2000 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book General-Regnskab over det danske Missions-Selskabs Indtægter og Udgifter ved dets 5te Aars Slutning written by and published by . This book was released on 1826 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Academic Press
ISBN 13 : 0080864481
Total Pages : 393 pages
Book Rating : 4.0/5 (88 download)
Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-07-02 with total page 393 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Author :
Publisher :
ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (94 download)
Download or read book Defects in Semiconductors Studied by Positron Annihilation Spectroscopy written by and published by . This book was released on 1997 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dana A. Al-Abdulmalik
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (111 download)
Download or read book Evolution of Vacancy-type Defects in Semiconductors written by Dana A. Al-Abdulmalik and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Margareta K. Linnarsson
Publisher :
ISBN 13 : 9789178705825
Total Pages : 30 pages
Book Rating : 4.7/5 (58 download)
Download or read book Studies of Defects in III-V Semiconductors written by Margareta K. Linnarsson and published by . This book was released on 1990 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zs. Kajcsos
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035704635
Total Pages : 2146 pages
Book Rating : 4.0/5 (357 download)
Download or read book Positron Annihilation - ICPA-9 written by Zs. Kajcsos and published by Trans Tech Publications Ltd. This book was released on 1992-01-01 with total page 2146 pages. Available in PDF, EPUB and Kindle. Book excerpt: The volumes present over 400 reviewed papers on the present state of the art and future prospects in the wide field of research involving positrons. The foreword by Edward Teller and the summaries by Jean-Charles Abbe (Chemistry) and Alfred Seeger (Physics) demonstrate how the field is seen from "outside" and from "inside".
Author :
Publisher :
ISBN 13 :
Total Pages : 526 pages
Book Rating : 4.0/5 ( download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1994-04 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Academic Press
ISBN 13 : 0080864570
Total Pages : 351 pages
Book Rating : 4.0/5 (88 download)
Download or read book Nonlinear Optics in Semiconductors II written by and published by Academic Press. This book was released on 1998-11-09 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Author :
Publisher :
ISBN 13 :
Total Pages : 16 pages
Book Rating : 4.:/5 (685 download)
Download or read book Positron Annihilation Studies of Defects in Molecular Beam Epitaxy Grown III-V Layers written by and published by . This book was released on 1994 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al{sub 0.32}Ga{sub 0.68}As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al{sub 0.32}Ga{sub 0.68}:Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700°C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450°C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500°C. The nature of the defect was shown to be different for material grown at 350 and 230°C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230°C, respectively.
Author : National Science Foundation (U.S.)
Publisher :
ISBN 13 :
Total Pages : 260 pages
Book Rating : 4.:/5 (31 download)
Download or read book Grants and Awards for the Fiscal Year Ended ... written by National Science Foundation (U.S.) and published by . This book was released on 1980 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Academic Press
ISBN 13 : 0080525253
Total Pages : 541 pages
Book Rating : 4.0/5 (85 download)
Download or read book Hydrogen in Semiconductors II written by and published by Academic Press. This book was released on 1999-05-05 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference
Author :
Publisher :
ISBN 13 :
Total Pages : 7 pages
Book Rating : 4.:/5 (684 download)
Download or read book Advances in Defect Characterizations of Semiconductors Using Positrons written by and published by . This book was released on 1996 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure of defects in solids. The authors summarize recent developments in defect characterization of semiconductors using depth-resolved PAS. The progress achieved in extending the capabilities of the PAS method is also described.
