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Defect Levels In Neutron Irradiated Gaas Schottky Diodes And Laser Diode Degradation
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Book Synopsis Defect Levels in Neutron-irradiated GaAs Schottky Diodes and Laser Diode Degradation by : Jacques E. Ludman
Download or read book Defect Levels in Neutron-irradiated GaAs Schottky Diodes and Laser Diode Degradation written by Jacques E. Ludman and published by . This book was released on 1973 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs Schottky and laser diodes are irradiated with high energy neutrons and the resultant trap and defect structure analyzed. The Schottky diodes are irradiated with a clean high-energy neutron beam from a Van de Graaff accelerator, and the laser irradiation is done in a nuclear reactor. The defect structure is shown to consist of energetically discrete trap levels, but the levels are found not to operate independently. A new defect model is proposed based on coupled defect levels and is shown to be in good agreement with the observations. On the basis of this model, values for the discrete trap levels are determined. Experimentally, Schottky diodes are cooled to temperatures in the region 78K, to 178K, the back bias is turned off and on again, and the capacitance versus time (capacitance decay) is monitored. These measurements are used to derive the activation energies of the trap levels. Trap levels are found at 175, 220, 325, 380 and 460 mV below the conduction band. Several general numerical techniques are developed for the purpose of fitting experimental data to both the independent-level and coupled-level decay models. (Author).
Book Synopsis Defect Levels in Neutron-irradiated GaAs Schottky Diodes and Laser Diode Degradation by : Jacques E. Ludman
Download or read book Defect Levels in Neutron-irradiated GaAs Schottky Diodes and Laser Diode Degradation written by Jacques E. Ludman and published by . This book was released on 1973 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs Schottky and laser diodes are irradiated with high energy neutrons and the resultant trap and defect structure analyzed. The Schottky diodes are irradiated with a clean high-energy neutron beam from a Van de Graaff accelerator, and the laser irradiation is done in a nuclear reactor. The defect structure is shown to consist of energetically discrete trap levels, but the levels are found not to operate independently. A new defect model is proposed based on coupled defect levels and is shown to be in good agreement with the observations. On the basis of this model, values for the discrete trap levels are determined. Experimentally, Schottky diodes are cooled to temperatures in the region 78K, to 178K, the back bias is turned off and on again, and the capacitance versus time (capacitance decay) is monitored. These measurements are used to derive the activation energies of the trap levels. Trap levels are found at 175, 220, 325, 380 and 460 mV below the conduction band. Several general numerical techniques are developed for the purpose of fitting experimental data to both the independent-level and coupled-level decay models. (Author)
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
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Book Synopsis Report on Research at AFCRL. by : Air Force Cambridge Research Laboratories (U.S.)
Download or read book Report on Research at AFCRL. written by Air Force Cambridge Research Laboratories (U.S.) and published by . This book was released on 1972 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
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Book Synopsis Dissertation Abstracts International by :
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Book Synopsis A Directory of Computer Software Applications--electrical and Electronics Engineering, 1970-Sept. 1978 by : United States. National Technical Information Service
Download or read book A Directory of Computer Software Applications--electrical and Electronics Engineering, 1970-Sept. 1978 written by United States. National Technical Information Service and published by . This book was released on 1978 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Government Reports Announcements by :
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Book Synopsis A Directory of Computer Software Applications, Electrical & Electronics Engineering by : United States. National Technical Information Service
Download or read book A Directory of Computer Software Applications, Electrical & Electronics Engineering written by United States. National Technical Information Service and published by . This book was released on 1978 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Study of Defects in Neutron-irradiated GaAs by : Yang-chin Shih
Download or read book A Study of Defects in Neutron-irradiated GaAs written by Yang-chin Shih and published by . This book was released on 1990 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Government Reports Announcements & Index by :
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Book Synopsis Radiation Effects in Advanced Semiconductor Materials and Devices by : C. Claeys
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
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