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Author :
Publisher :
ISBN 13 :
Total Pages : 304 pages
Book Rating : 4.:/5 (3 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Chandan Kumar Sarkar
Publisher : CRC Press
ISBN 13 : 1466512660
Total Pages : 462 pages
Book Rating : 4.4/5 (665 download)
Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Author : Stanford University. Stanford Electronics Laboratories
Publisher :
ISBN 13 :
Total Pages : 112 pages
Book Rating : 4.F/5 ( download)
Download or read book An Accurate Model for the Short Channel Insulated Gate Field-effect Transistor written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1971 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: An accurate short channel Insulated gate field-effect transistor (IGFET) model is described which includes the effect of the drain depletion region on device characteristics in both triode and saturation regions. Calculation of deviations from the classical triode and saturation equations caused by interaction between the drain depletion region and the surface inversion region in devices constructed on lightly doped (
Author :
Publisher :
ISBN 13 :
Total Pages : 224 pages
Book Rating : 4.:/5 (31 download)
Download or read book U.S. Government Research & Development Reports written by and published by . This book was released on 1970 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : University of Michigan. College of Engineering
Publisher : UM Libraries
ISBN 13 :
Total Pages : 806 pages
Book Rating : 4.3/5 (91 download)
Download or read book College of Engineering written by University of Michigan. College of Engineering and published by UM Libraries. This book was released on 1983 with total page 806 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wai-Kai Chen
Publisher : CRC Press
ISBN 13 : 9781420041408
Total Pages : 3076 pages
Book Rating : 4.0/5 (414 download)
Download or read book The Circuits and Filters Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2002-12-23 with total page 3076 pages. Available in PDF, EPUB and Kindle. Book excerpt: A bestseller in its first edition, The Circuits and Filters Handbook has been thoroughly updated to provide the most current, most comprehensive information available in both the classical and emerging fields of circuits and filters, both analog and digital. This edition contains 29 new chapters, with significant additions in the areas of computer-
Author : S. Selberherr
Publisher : Springer Science & Business Media
ISBN 13 : 3709187524
Total Pages : 308 pages
Book Rating : 4.7/5 (91 download)
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Author : Carlos Galup-montoro
Publisher : World Scientific
ISBN 13 : 9814477974
Total Pages : 445 pages
Book Rating : 4.8/5 (144 download)
Download or read book Mosfet Modeling For Circuit Analysis And Design written by Carlos Galup-montoro and published by World Scientific. This book was released on 2007-02-27 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author :
Publisher :
ISBN 13 :
Total Pages : 792 pages
Book Rating : 4.:/5 (31 download)
Download or read book NASA Tech Brief written by and published by . This book was released on 1970 with total page 792 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kit Man Cham
Publisher : Springer Science & Business Media
ISBN 13 : 1461316952
Total Pages : 378 pages
Book Rating : 4.4/5 (613 download)
Download or read book Computer-Aided Design and VLSI Device Development written by Kit Man Cham and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.
Author : University of Michigan
Publisher : UM Libraries
ISBN 13 :
Total Pages : 164 pages
Book Rating : 4.3/5 (91 download)
Download or read book University of Michigan Official Publication written by University of Michigan and published by UM Libraries. This book was released on 1988 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: Each number is the catalogue of a specific school or college of the University.
Author : Otto G. Folberth
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 :
Total Pages : 330 pages
Book Rating : 4.3/5 (97 download)
Download or read book VLSI, Technology and Design written by Otto G. Folberth and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1984 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : United States. National Aeronautics and Space Administration
Publisher :
ISBN 13 :
Total Pages : 788 pages
Book Rating : 4.F/5 ( download)
Download or read book Cumulative Index to NASA Tech Briefs written by United States. National Aeronautics and Space Administration and published by . This book was released on 1970 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Norman G. Einspruch
Publisher : Academic Press
ISBN 13 : 1483217701
Total Pages : 469 pages
Book Rating : 4.4/5 (832 download)
Download or read book VLSI Electronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 3 evaluates trends for the future of very large scale integration (VLSI) electronics and the scientific base that supports its development. This book discusses the impact of VLSI on computer architectures; VLSI design and design aid requirements; and design, fabrication, and performance of CCD imagers. The approaches, potential, and progress of ultra-high-speed GaAs VLSI; computer modeling of MOSFETs; and numerical physics of micron-length and submicron-length semiconductor devices are also elaborated. This text likewise covers the optical linewidth measurements on photomasks and wafers and effects of materials technology and fabrication tolerances on guided-wave optical communication and signal processing. This volume is recommended for scientists and engineers who wish to become familiar with VLSI electronics, device designers concerned with the fundamental character of and limitations to device performance, systems architects who will be charged with tying VLSI circuits together, and engineers conducting work on the utilization of VLSI circuits in specific areas of application.
Author : Stanford University. Stanford Electronics Laboratories
Publisher :
ISBN 13 :
Total Pages : 134 pages
Book Rating : 4.F/5 ( download)
Download or read book Quarterly Status Report No.117, January Through March 1970 written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1970 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1004 pages
Book Rating : 4.3/5 (91 download)
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 2000 with total page 1004 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David J Lockwood
Publisher : World Scientific
ISBN 13 : 9814550159
Total Pages : 2858 pages
Book Rating : 4.8/5 (145 download)
Download or read book Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes) written by David J Lockwood and published by World Scientific. This book was released on 1995-01-20 with total page 2858 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
