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Comprehensive Research On The Stability And Electronic Properties Of A Si
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Book Synopsis Comprehensive Research on the Stability and Electronic Properties of A-Si by :
Download or read book Comprehensive Research on the Stability and Electronic Properties of A-Si written by and published by . This book was released on 1995 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes work on the growth of a-Si:H and a-(Si, Ge):H materials and devices using well-controlled growth techniques. The a-Si:H materials were grown at higher temperatures (300°-375°C) using electron-cyclotron-resonance (ECR) plasma techniques with a remote H beam. These films have excellent electronic quality and show significant improvements in stability compared with glow-discharge-produced a-Si:H materials. Several problems were encountered during the fabrication of devices in these materials, and we were able to overcome them by a systematic work on buffer layers in these cells. We also studied alternative designs for improving the stability of a-Si:H cells and produced graded-gap a-Si:H cells using glow-discharge that are more stable than comparable standard, ungraded glow discharge devices. Finally, systematic work was done to produce good-quality a-(Si, Ge):H films, using triode radio frequency (RF) glow-discharge with ion bombardment during growth. Diagnostic devices were made using these films, and the properties of the material, such as Urbach energies and hole mobility-lifetime products, were measured in these devices. We found a systematic increase in the Urbach energies, and a corresponding decrease in the hole and electron [mu][tau] products, as the Ge content of the alloys increases.
Book Synopsis Comprehensive Research on the Stability and Electronic Properties of A-Si:H and A-SiGe:H Alloys and Devices by : Vikram Dalal
Download or read book Comprehensive Research on the Stability and Electronic Properties of A-Si:H and A-SiGe:H Alloys and Devices written by Vikram Dalal and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comprehensive Research on the Stability and Electronic Properties of A-Si:H and A-SiGe:H Alloys and Devices. Final Subcontract Report, 10 March 1991--30 August 1994 by :
Download or read book Comprehensive Research on the Stability and Electronic Properties of A-Si:H and A-SiGe:H Alloys and Devices. Final Subcontract Report, 10 March 1991--30 August 1994 written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes work on the growth of a-Si:H and a-(Si, Ge):H materials and devices using well-controlled growth techniques. The a-Si:H materials were grown at higher temperatures (300[degrees]-375[degrees]C) using electron-cyclotron-resonance (ECR) plasma techniques with a remote H beam. These films have excellent electronic quality and show significant improvements in stability compared with glow-discharge-produced a-Si:H materials. Several problems were encountered during the fabrication of devices in these materials, and we were able to overcome them by a systematic work on buffer layers in these cells. We also studied alternative designs for improving the stability of a-Si:H cells and produced graded-gap a-Si:H cells using glow-discharge that are more stable than comparable standard, ungraded glow discharge devices. Finally, systematic work was done to produce good-quality a-(Si, Ge):H films, using triode radio frequency (RF) glow-discharge with ion bombardment during growth. Diagnostic devices were made using these films, and the properties of the material, such as Urbach energies and hole mobility-lifetime products, were measured in these devices. We found a systematic increase in the Urbach energies, and a corresponding decrease in the hole and electron[mu][tau] products, as the Ge content of the alloys increases.
Book Synopsis Research on the Stability, Electronic Properties, and Structure of A-Si by :
Download or read book Research on the Stability, Electronic Properties, and Structure of A-Si written by and published by . This book was released on 1992 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt: Objective is to obtain a comprehensive understanding of structure and electronic properties of a-Si:H as they apply to solar cells. First observations were of light enhancement and field suppression of H diffusion in a-Si:H. Theoretical studies were made of hydrogen density of states distribution and its relation to defect metastability. Reduced density of light induced defect is observed in a-Si:H deposited in a remote hydrogen plasma reactor at 400 C. Kinetics of metastable defect creation using forward bias in a p-i-n diode to induce defects were studied and compared to light-induced defect creation in the same devices. Studies were made of transport at high electric field and low temperature. Detailed studies were made of kinetics of dopant metastability in n-type and p-type a-Si:H.
Book Synopsis Research on the Stability, Electronic Properties, and Structure of A-Si by :
Download or read book Research on the Stability, Electronic Properties, and Structure of A-Si written by and published by . This book was released on 1992 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt: Objective is to obtain a comprehensive understanding of structure and electronic properties of a-Si:H as they apply to solar cells. First observations were of light enhancement and field suppression of H diffusion in a-Si:H. Theoretical studies were made of hydrogen density of states distribution and its relation to defect metastability. Reduced density of light induced defect is observed in a-Si:H deposited in a remote hydrogen plasma reactor at 400 C. Kinetics of metastable defect creation using forward bias in a p-i-n diode to induce defects were studied and compared to light-induced defect creation in the same devices. Studies were made of transport at high electric field and low temperature. Detailed studies were made of kinetics of dopant metastability in n-type and p-type a-Si:H.
Book Synopsis Comprehensive Research on Stability and Performance of A-Si:H and Alloys by : Vikram L. Dalal
Download or read book Comprehensive Research on Stability and Performance of A-Si:H and Alloys written by Vikram L. Dalal and published by . This book was released on 1996 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report covers the research done during the first phase of the subcontract. During this period, we concentrated on two areas: improving the voltage and stability of a-Si:H devices made using electron cyclotron resonance (ECR) deposition, and improving the properties of a-(Si, Ge):H films, also using ECR deposition. In the area of device research, we successfully solved the difficult problem of controlling B diffusion at high temperatures from p into i layers in superstrate devices (where the p layer is the first layer deposited on a transparent conducting oxide). In our ECR technique research we systematically studied the deposition of a-(Si, Ge):H films using remote, low-pressure ECR techniques. We used two gases, H2 and He, as the primary plasma-region gases, and we found that the properties of the film depend on which gas is used as the plasma gas. We find that the plasma potentials and ion energies are higher for He than for H2 plasma conditions. We believe that significant ion bombardment when He is used may account for the lower H content and the better electronic properties.
Book Synopsis Research on the Stability, Electronic Properties, and Structure of A-Si:H and Its Alloys by :
Download or read book Research on the Stability, Electronic Properties, and Structure of A-Si:H and Its Alloys written by and published by . This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Research on the Stability, Electronic Properties, and Structure of A-Si:H and Its Alloys by : W. B. Jackson
Download or read book Research on the Stability, Electronic Properties, and Structure of A-Si:H and Its Alloys written by W. B. Jackson and published by . This book was released on 1994 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si by :
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si written by and published by . This book was released on 1998 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work carried out by the University of Oregon Under this subcontract focused on the characterization and evaluation of low-gap (a-Si, Ge:H) alloy materials and on issues related to overall stability in the mid-gap (a-SiH) materials. First, researchers characterized an extensive series of Uni-Solar a-Si, Ge:H samples using drive-level capacitance profiling and the analysis of sub-band-gap photocapacitance and photocurrent spectra. Thus, several bands of deep defect transitions were identified. Researchers were able to verify that charged defects are responsible for the different observed defect bands in device-quality a-Si, Ge:H alloy material. Second, they reported results of their measurements on a-Si, Ge:H alloy ''cathodic'' samples produced at Harvard University; these samples were found to exhibit significantly lower defect densities in the high Ge composition range (>50at.% Ge) than alloy samples produced either by conventional glow discharge of photo-chemical vapor deposition. Third, they performed voltage pulse stimulated capacitance transient measurements on a-Si:H/a-Si, Ge:H heterostructure samples to look for carrier trapping states that might be associated with this interface; they found there was a clear signature of trapped hole emission extending over long times associated specifically with the interface itself in concentrations of roughly 1011 cm−2. Fourth, researchers reported the results on several hot-wire a-Si:H samples produced with varying hydrogen levels. Their studies indicate that hot-wire-produced a-Si:H, with H levels between 2-5at.%, should lead to mid-gap devices with superior properties. Finally, they discussed some results on glow-discharge material, as well electron-cyclotron-resonance-deposited a-Si:H grown under hydrogen dilution conditions, and confirmed that, in terms of deep-defect creation, such films exhibited improved stability compared to conventional glow-discharge material.
Book Synopsis Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices. Annual Report, May 31, 1995--May 30, 1996 by :
Download or read book Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices. Annual Report, May 31, 1995--May 30, 1996 written by and published by . This book was released on 1997 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si, Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion bombardment and etching, we can induce a more perfect lattice structure, and thereby improve the properties of the films and devices.
Book Synopsis Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices by :
Download or read book Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices written by and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this report, the authors describe the work done to improve the material and device properties of a-Si:H and a-(Si, Ge):H alloys prepared using electron cyclotron resonance (ECR) plasma deposition and to understand the growth chemistry. Major results were obtained in the following areas: (1) Influence of plasma chemistry on properties and stability of a-Si:H single-junction solar cells; (2) Fabrication of good-quality tandem-junction cells. The authors made tandem-junction a-Si/a-Si cells with excellent voltages and fill factors using the H-ECR process; (3) Growth of high-quality a-(Si, Ge):H films using the ECR deposition process; (4) Fabrication of single-junction devices in a-(Si, Ge):H for diagnosing the material; and (5) Graded-gap cells in a-(Si, Ge):H. Good devices were produced using a graded-gap I-layer. In summary, the most important finding from this research has been that plasma chemistry plays a very important role in determining the properties of the materials, particularly the properties of the a-(Si, Ge):H alloy system. Even in a-Si:H, plasma chemistry plays a role in determining stability. This result suggests that by deliberately changing the chemistry of deposition, one may be able to further improve the a-(Si, Ge):H materials system and make its properties comparable to the properties of a-Si:H. The ECR reactor has proved to be a very useful chemical tool, with excellent control over growth chemistry.
Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si by :
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si written by and published by . This book was released on 1997 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work done during this second phase of the University of Oregon's NREL subcontract focused on degradation studies in both pure a-Si:H and a-Si, Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow-discharge method and were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley laboratory. First, the results from the a-Si, Ge:H degradation studies support the conclusion that considerable quantities of charged defects exist in nominally intrinsic material. Researchers found that on light-soaking, all the observed defect sub-bands increased; however, their ratios varied significantly. Second, researchers performed voltage pulse stimulated capacitance transient measurements on a-Si:H/a-Si, Ge:H heterostructure samples and found a clear signature of trapped hole emission extending over long times. Finally, researchers began comparison studies of the electronic properties of a-Si:H grown by glow discharge either with 100% silane, or with silane diluted in H2 or He gas. The results on these samples indicate that the films grown under high hydrogen dilution exhibit roughly a factor of 3 lower deep defect densities than those grown using pure silane.
Book Synopsis Government Reports Announcements & Index by :
Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1995 with total page 806 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler
Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si:H-based Cells and Overall Performance in A-Si, Ge:H-based Cells by : J. David Cohen
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si:H-based Cells and Overall Performance in A-Si, Ge:H-based Cells written by J. David Cohen and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work carried out during this second phase of our NREL Subcontract has been focused on degradation studies in both pure a-Si:H and the a-Si, Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow discharge method. They were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley Laboratory.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:
