Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Characterization Of The Chemical Mechanical Planarization Cmp Polishing Pad Using Pyrene Fluorescence
Download Characterization Of The Chemical Mechanical Planarization Cmp Polishing Pad Using Pyrene Fluorescence full books in PDF, epub, and Kindle. Read online Characterization Of The Chemical Mechanical Planarization Cmp Polishing Pad Using Pyrene Fluorescence ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Characterization of the Chemical Mechanical Planarization (CMP) Polishing Pad Using Pyrene Fluorescence by : Kori V. Bevans
Download or read book Characterization of the Chemical Mechanical Planarization (CMP) Polishing Pad Using Pyrene Fluorescence written by Kori V. Bevans and published by . This book was released on 1999 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Evaluation and Characterization of Polyurethane Chemical Mechanical Planarization Polishing Pads by : Krishnashree Achuthan
Download or read book Evaluation and Characterization of Polyurethane Chemical Mechanical Planarization Polishing Pads written by Krishnashree Achuthan and published by . This book was released on 1998 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Mechanical Planarization IV by : R. L. Opila
Download or read book Chemical Mechanical Planarization IV written by R. L. Opila and published by The Electrochemical Society. This book was released on 2001 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Mechanical Polishing 14 by : R. Rhoades
Download or read book Chemical Mechanical Polishing 14 written by R. Rhoades and published by The Electrochemical Society. This book was released on 2016-09-21 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Mechanical Planarization VI by : Sudipta Seal
Download or read book Chemical Mechanical Planarization VI written by Sudipta Seal and published by The Electrochemical Society. This book was released on 2003 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical-Mechanical Polishing 2001 - Advances and Future Challenges: by : Suryadevara V. Babu
Download or read book Chemical-Mechanical Polishing 2001 - Advances and Future Challenges: written by Suryadevara V. Babu and published by Cambridge University Press. This book was released on 2014-06-05 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: With copper and barrier-layer integration firmly in place, several other exciting developments are occurring in the practice of chemical-mechanical polishing (CMP), and many advances are described in this book, first published in 2001. Discussions on CMP for shallow-trench isolation, abrasive-free slurries, improvements in pad and tool configurations including fixed abrasive pads, 'engineered' particles, effects of nanotopography, end-point studies, defect characterization and novel post-CMP cleaning methods are highlighted. Considerable progress has also been reported in modeling the complicated interactions that occur between the wafer surface and the pad and the slurry, whether containing abrasives or abrasive-free, and their influence on dishing and erosion and nonuniformity. These studies offer valuable insights for process improvements and yet many challenges remain and will provide a high level of interest for future books. Topics include: recent developments - pads and related issues; CMP abrasives; copper CMP/STI and planarization; STI and planarization - wear-rate models; low-k and integration issues - particle and process effects in CMP and issues in CMP cleaning.
Download or read book Chemical-mechanical Polishing written by and published by . This book was released on 2001 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization and Modeling of Mainstream and Alternative Conditioning and Polishing Technologies in Inter-Layer Dielectric and Copper Chemical Mechanical Planarization by : Hyosang Lee
Download or read book Characterization and Modeling of Mainstream and Alternative Conditioning and Polishing Technologies in Inter-Layer Dielectric and Copper Chemical Mechanical Planarization written by Hyosang Lee and published by . This book was released on 2008 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation consists of four topics that focused on investigating the fundamental characteristics of chemical mechanical planarization (CMP) processes. These are alternative and conventional pad conditioning technologies, inhibitor characteristics of slurry additives, and pad stains in copper CMP. A high pressure micro jet (HPMJ) technology was used to investigate pad conditioning and evaluated as an alternative to conventional diamond disc pad conditioning in copper and inter-layer dielectric CMP. Results showed that the HPMJ pad conditioning system had the potential of removing slurry residues and polish by-products inside pad grooves and pores on the pad surface, thus leading to improved pad life and reduced wafer-level defects. In addition, a proposed conditioning scheme, namely a combination of diamond and HPMJ pad conditioning, allowed for stable polish results in terms of removal rate and coefficient of friction (COF). The theoretical and experimental investigation of conventional diamond disc pad conditioning was performed to explore the effects of conditioner design factors on removal rate and COF in copper CMP. In this study, conditioning affected pad surface topography and was also capable of modifying the removal rate of copper by changing the COF and the reaction temperature. Both theory and experimental results showed that friction and removal rate should both decrease as the conditioned surface became less abrupt. Ammonium dodecyl sulfate (ADS), an environmentally friendly surfactant, was evaluated as an alternative inhibitor to benzotriazole (BTA) in copper CMP. Results demonstrated that the inhibition efficiencyof ADS was superior to that of BTA in terms of coefficient of friction (COF), removal rate and temperature. Spectral analysis of shear force showed the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. The characterization of experimental and numerical formation of pad staining was investigated. Pad staining was a result of material removal and it increased with polishing pressure, wafer rotation rate and polishing time. Experimental results also indicated that pad staining had no significant effect on removal rate. The experimental and simulated pad staining images demonstrated that polish by-products were advected downstream with the slurry flow, and deposited on the pad surface.
Book Synopsis Proceedings of the First International Symposium on Chemical Mechanical Planarization by : Iqbal Ali
Download or read book Proceedings of the First International Symposium on Chemical Mechanical Planarization written by Iqbal Ali and published by The Electrochemical Society. This book was released on 1997 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling of Chemical Mechanical Polishing for Dielectric Planarization by : Dennis Okumu Ouma
Download or read book Modeling of Chemical Mechanical Polishing for Dielectric Planarization written by Dennis Okumu Ouma and published by . This book was released on 1998 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical-Mechanical Polishing - Fundamentals and Challenges: by : S. V. Babu
Download or read book Chemical-Mechanical Polishing - Fundamentals and Challenges: written by S. V. Babu and published by Cambridge University Press. This book was released on 2014-06-05 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical-mechanical planarization (CMP) has emerged over the past few years as a key enabling technology in the relentless drive of the semiconductor industry towards smaller, faster and less expensive interconnects. However, there are still many gaps in the fundamental understanding of the overall CMP process and the associated defect and contamination issues. This book brings together many of the active players in the field to focus on the interdisciplinary nature of these challenges. It reflects, to some extent, the role played by both academic institutions and multinational corporations in opening up the frontiers in the field of CMP for wider dissemination. Both experimental and theoretical contributions are included. Topics include: overview and oxide polishing; pads and related issues; metal polishing - W and Al; copper polishing and related issues; CMP modeling and fluid flow; and particle adhesion and post-polish cleaning.
Book Synopsis Chemical Mechanical Planarization by : Chhavi Manocha
Download or read book Chemical Mechanical Planarization written by Chhavi Manocha and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Finally, the third part of the thesis details the synthesis and characterization of nano-zirconia for potential slurry applications. Nano-zirconia was synthesized using the plasma route and then characterized using different analytical techniques like TEM and XRD. These nanoparticles were then used to make abrasive slurry for oxide CMP and the polished wafers were analyzed for surface defects.
Book Synopsis Fundamental Consumables Characterization of Advanced Dielectric and Metal Chemical Mechanical Planarization Processes by : Yasa Sampurno
Download or read book Fundamental Consumables Characterization of Advanced Dielectric and Metal Chemical Mechanical Planarization Processes written by Yasa Sampurno and published by . This book was released on 2008 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation presents a series of studies relating to kinetics and kinematics of inter-layer dielectric and metal chemical mechanical planarization processes. These are also evaluated with the purposes of minimizing environmental and cost of ownership impact. The first study is performed to obtain the real-time substrate temperature during the polishing process and is specifically intended to understand the temperature distribution across the polishing wafer during the chemical mechanical planarization process. Later, this technique is implemented to study the effect of slurry injection position for optimum slurry usage. It is known that the performance of chemical mechanical planarization depends significantly on the polishing pad and the kinematics involved in the process. Variations in pad material and pad grooving type as well as pressure and sliding velocity can affect polishing performance. One study in this dissertation investigates thermoset and thermoplastic pad materials with different grooving methods and patterns. The study is conducted on multiple pressure and sliding velocity variations to understand the characteristic of each pad. The analysis method elaborated in this study can be applied generically. A subsequent study focuses in a slurry characterization technique. Slurry, a critical component in chemical mechanical planarization, is typically a water-based dispersion of fine abrasive particles with various additives to control material removal rate and microscratches. Simultaneous turbidity and low angle light scattering methods under well-defined mixing conditions are shown to quantify the stability of abrasive particle from aggregations. Further contribution of this dissertation involves studies related to the spectral analysis of raw shear force and down force data obtained during chemical mechanical planarization. These studies implemented Fast Fourier Transforms to convert force data from time to frequency domain. A study is performed to detect the presence of larger, defect-causing particles during polishing. In a further application on diamond disc conditioning work is performed to achieve optimum break-in time and an optimum conditioning duty cycle. Studies on spectral analysis are also extended to planarization of shallow trench isolation pattern wafers to monitor the polishing progress in real-time.
Book Synopsis Chemical Mechanical Polishing 10 by : G. Banerjee
Download or read book Chemical Mechanical Polishing 10 written by G. Banerjee and published by The Electrochemical Society. This book was released on 2009-05 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Chemical Mechanical Polishing 10¿, held during the 215th meeting of The Electrochemical Society, in San Francisco, California from May 24 to 29, 2009.
Book Synopsis Advances in CMP Polishing Technologies by : Toshiro Doi
Download or read book Advances in CMP Polishing Technologies written by Toshiro Doi and published by William Andrew. This book was released on 2011-12-06 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMP and polishing are the most precise processes used to finish the surfaces of mechanical and electronic or semiconductor components. Advances in CMP/Polishing Technologies for Manufacture of Electronic Devices presents the latest developments and technological innovations in the field - making cutting-edge R&D accessible to the wider engineering community. Most of the applications of these processes are kept as confidential as possible (proprietary information), and specific details are not seen in professional or technical journals and magazines. This book makes these processes and applications accessible to a wider industrial and academic audience. Building on the fundamentals of tribology - the science of friction, wear and lubrication - the authors explore the practical applications of CMP and polishing across various market sectors. Due to the high pace of development of the electronics and semiconductors industry, many of the presented processes and applications come from these industries. Demystifies scientific developments and technological innovations, opening them up for new applications and process improvements in the semiconductor industry and other areas of precision engineering Explores stock removal mechanisms in CMP and polishing, and the challenges involved in predicting the outcomes of abrasive processes in high-precision environments The authors bring together the latest innovations and research from the USA and Japan
Book Synopsis Synergy Between Chemical Dissolution and Mechanical Abrasion During Chemical Mechanical Polishing of Copper by : Wei Che
Download or read book Synergy Between Chemical Dissolution and Mechanical Abrasion During Chemical Mechanical Polishing of Copper written by Wei Che and published by . This book was released on 2005 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical planarization (CMP) is becoming a promising mainstream semiconductor processing method because of its demonstrated capability to achieve better local and global planarization for various materials. However, the CMP process is influenced by a set of factors, which lead to a poor understanding of the material removal mechanisms (MRMs) and inhibits the migratability of the lab-scale experiments to industrial practice. This work focuses on the synergistic effects between chemical dissolution and mechanical abrasion to understand the MRMs during CMP. Initial in-situ wear test in chemically active slurry showed an increased material removal rate (MRR) relative to dry wear tests. To understand the synergistic effects, two plausible MRMs; (i) chemical dissolution enhanced mechanical abrasion and (ii) mechanical abrasion accelerated chemical dissolution, were investigated. In addition, a phenomenological MRR model based on scratch-intersections was formulated to understand the role of consumables and the process parameters. For mechanism I, a combined experimental and modeling technique was devised to understand the mechanical properties of the soft layer formed on the surface due to chemical exposure in CMP. The developed approaches utilized nano-scratch tests, nano-dynamic mechanical analysis (DMA) tests, the limit analysis solution of surface plowing under a spherical traveling indenter, and finite element simulation to deconvolute the soft layer thickness, hardness and elastic modulus. For mechanism II, it is found that the residual stress caused by the mechanical wear enhances the chemical etching rate, as manifested by an increase in wear depth. It is also found that the roughness with wavelength above a critical value grows while roughness of lower wavelength decays during etching, in which an established fact for stress-enhanced chemical dissolution is used. The developed understanding would enable understanding the root causes of defect generation mechanism and render remedies for yield improvements. The proposed models, through their mechanistic description, will facilitate an exploration of the design space and identification of realistic CMP process domains, including: (i) particle shape, size and concentration; (ii) adapting slurry chemistry for required rates of chemical dissolution and mechanical abrasion; and (iii) selecting pads with the proper surface morphology and stiffness.
Book Synopsis Chemical-Mechanical Polishing 2001 - Advances and Future Challenges: Volume 671 by : Materials Research Society. Meeting
Download or read book Chemical-Mechanical Polishing 2001 - Advances and Future Challenges: Volume 671 written by Materials Research Society. Meeting and published by . This book was released on 2001-12-14 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 2001.
