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Characterization Of Hot Carrier Induced Degradation Via Small Signal Characteristics In Mosfets
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Book Synopsis Characterization of Hot-carrier Induced Degradation Via Small-signal Characteristics in Mosfets by : Mei Po Mabel Lau
Download or read book Characterization of Hot-carrier Induced Degradation Via Small-signal Characteristics in Mosfets written by Mei Po Mabel Lau and published by . This book was released on 2001 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization Methods for Submicron MOSFETs by : Hisham Haddara
Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer. This book was released on 1995 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject.
Book Synopsis Characterization of Hot-carrier Degradation in MOSFET's by Noise and Surface Recombination Currents by : Amanda Shiu-Tan Cheng
Download or read book Characterization of Hot-carrier Degradation in MOSFET's by Noise and Surface Recombination Currents written by Amanda Shiu-Tan Cheng and published by . This book was released on 1996 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hot Carrier Design Considerations for MOS Devices and Circuits by : Cheng Wang
Download or read book Hot Carrier Design Considerations for MOS Devices and Circuits written by Cheng Wang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Book Synopsis Characterization of Hot-carriers Induced Degradation in Mosfets Through Gate Capacitances Measurement at Room and Cryogenic Temperatures by : Clement Che Ta Hsu
Download or read book Characterization of Hot-carriers Induced Degradation in Mosfets Through Gate Capacitances Measurement at Room and Cryogenic Temperatures written by Clement Che Ta Hsu and published by . This book was released on 2001 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Evaluation and Modelling of Hot-carrier Induced Degradation in MOSFETs by Gate-to-drain Capacitance Measurement by : Ramin Ghodsi
Download or read book Evaluation and Modelling of Hot-carrier Induced Degradation in MOSFETs by Gate-to-drain Capacitance Measurement written by Ramin Ghodsi and published by . This book was released on 1994 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Evaluation of Hot-carrier Induced Degradation in MOSFETs by Measurement at Cryogenic Temperatures by : Sherry Shu Ting Yao
Download or read book Evaluation of Hot-carrier Induced Degradation in MOSFETs by Measurement at Cryogenic Temperatures written by Sherry Shu Ting Yao and published by . This book was released on 2000 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1874 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hot Carrier Induced Degradation and Interface State Generation in N-channel MOSFET's at 77 K by : Anthony Erich Grass
Download or read book Hot Carrier Induced Degradation and Interface State Generation in N-channel MOSFET's at 77 K written by Anthony Erich Grass and published by . This book was released on 1989 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Hot Carrier Damage in N- and P-channel MOSFETs by : Janet L. Zamora-Moya
Download or read book Characterization of Hot Carrier Damage in N- and P-channel MOSFETs written by Janet L. Zamora-Moya and published by . This book was released on 1998 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comparative Hot Carrier Induced Degradation in 0.25[micro]m MOSFETs with H Or D Passivated Interfaces by :
Download or read book Comparative Hot Carrier Induced Degradation in 0.25[micro]m MOSFETs with H Or D Passivated Interfaces written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Hot electron induced degradation in 0.25[micro]m, n-channel MOSFETs annealed in H[sub 2] or D[sub 2] containing atmospheres is reported. Threshold voltage and channel transconductance variations correlate with the growth of the interface state density. The spectral density of the stress induced interface states in the Si bandgap does not depend upon the anneal gas but the transistor lifetime (for a 20% transconductance variation) is[approximately] 40 times shorter for H[sub 2] as opposed to D[sub 2] annealed devices.
Book Synopsis Characterization of Hot-carrier Degradation in Submicrometer MOS Transistors by : Diing Shenp Ang
Download or read book Characterization of Hot-carrier Degradation in Submicrometer MOS Transistors written by Diing Shenp Ang and published by . This book was released on 1997 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hot Carrier Reliability Characterization of 0.25 [mu]m MOSFETs with Alternative Gate Dielectrics by : Celisa Kelly Date
Download or read book Hot Carrier Reliability Characterization of 0.25 [mu]m MOSFETs with Alternative Gate Dielectrics written by Celisa Kelly Date and published by . This book was released on 1993 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis 模拟CMOS集成电路设计(国外大学优秀教材——微电子类系列(影印版)) by : Behzad Razavi
Download or read book 模拟CMOS集成电路设计(国外大学优秀教材——微电子类系列(影印版)) written by Behzad Razavi and published by 清华大学出版社有限公司. This book was released on 2005 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: 本书介绍了模拟电路设计的基本概念, 说明了CMOS模拟集成电路设计技术的重要作用, 描述了MOS器件的物理模型及工作特性等.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2007 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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