Characterization and qualification of GaAs semi-insulating substrates

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ISBN 13 :
Total Pages : 66 pages
Book Rating : 4.X/5 (4 download)

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Book Synopsis Characterization and qualification of GaAs semi-insulating substrates by : James D. Oliver

Download or read book Characterization and qualification of GaAs semi-insulating substrates written by James D. Oliver and published by . This book was released on 1981 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Characterization of Ion-implanted MESFET's on GaAs Semi-insulating Substrates with Emphasis on the Effects of Deep Levels

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Publisher :
ISBN 13 :
Total Pages : 189 pages
Book Rating : 4.:/5 (354 download)

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Book Synopsis Characterization of Ion-implanted MESFET's on GaAs Semi-insulating Substrates with Emphasis on the Effects of Deep Levels by : Bonggi Kim

Download or read book Characterization of Ion-implanted MESFET's on GaAs Semi-insulating Substrates with Emphasis on the Effects of Deep Levels written by Bonggi Kim and published by . This book was released on 1982 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growth and Characterization of Bulk, Semi-Insulating Gallium Arsenide

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ISBN 13 :
Total Pages : 23 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Growth and Characterization of Bulk, Semi-Insulating Gallium Arsenide by : R. L. Ross

Download or read book Growth and Characterization of Bulk, Semi-Insulating Gallium Arsenide written by R. L. Ross and published by . This book was released on 1981 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: The physical and electrical properties of GaAs show it to be an important semiconductor material for use in various electronic devices associated with advanced military systems. However, the realization of enhanced device performance has been delayed, partly due to the lack of consistent, high quality, semi-insulating GaAs substrate material. A modified liquid-encapsulated Czochralski technique employing pressure-assisted, in-situ compounding is described. This process, first demonstrated in the United States by the US Army Electronics Technology and Devices Laboratory, consistently yields high resistivity (to 10 to the 9th power ohm-cm) GaAs without the intentional addition of charge compensators. This approach is now becoming the basis for U.S. volume production of large diameter, high quality, semi-insulating GaAs material. An automated system for the measurement of transport properties by use of the van der Pauw method is described. A mixed conduction analysis allows the direct determination of individual carrier concentrations and mobilities, intrinsic carrier concentration and Fermi level. Applied to ET & DL's non-Cr-doped GaAs, this analysis yields electron mobilities higher than Cr-doped material and Fermi levels which are nearly intrinsic. (Author).

Characterization of Semi-insulating GaAs for Detector Fabrication

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (632 download)

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Book Synopsis Characterization of Semi-insulating GaAs for Detector Fabrication by :

Download or read book Characterization of Semi-insulating GaAs for Detector Fabrication written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation detectors work as Schottky devices. The Schottky contact of the investigated detectors consists of a Ti/Pt/Au layer on the front-side of a 500?m thick semi-insulating GaAs substrate. The back-side is an alloyed Ge/Au ohmic contact. The structure of these contacts are squares with sides of between 1,5mm and 5mm. In order to seperate the behaviour of the contacts, an independent determination of those parameters of the bulk material which are responsible for a satisfactory functioning of the detector are necessary. We present a theoretical model of the detector which simulates detector properties according to relevant parameters such as the resistivity p, the mobility? of the charge carriers, the energy level EDD and concentration NDD of the bulk-defects and the leakage-current jL of the device. The aim of this study is to determine these parameters experimentally and compare materials from different suppliers. The relevant parameters are then used for the detector simulation.

Semiconductor Heteroepitaxy: Growth Characterization And Device Applications

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Publisher : World Scientific
ISBN 13 : 9814548421
Total Pages : 714 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Semiconductor Heteroepitaxy: Growth Characterization And Device Applications by : B Gil

Download or read book Semiconductor Heteroepitaxy: Growth Characterization And Device Applications written by B Gil and published by World Scientific. This book was released on 1995-12-15 with total page 714 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the mathematics of differential geometry in a way more intelligible to physicists and other scientists interested in this field. This book is basically divided into 3 levels; level 0, the nearest to intuition and geometrical experience, is a short summary of the theory of curves and surfaces; level 1 repeats, comments and develops upon the traditional methods of tensor algebra analysis and level 2 is an introduction to the language of modern differential geometry. A final chapter (chapter IV) is devoted to fibre bundles and their applications to physics. Exercises are provided to amplify the text material.

Characterization in Compound Semiconductor Processing

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Publisher : Momentum Press
ISBN 13 : 1606500414
Total Pages : 217 pages
Book Rating : 4.6/5 (65 download)

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Book Synopsis Characterization in Compound Semiconductor Processing by : Yale Strausser

Download or read book Characterization in Compound Semiconductor Processing written by Yale Strausser and published by Momentum Press. This book was released on 2010 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.

Semi-Insulating III–V Materials

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Publisher : Springer Science & Business Media
ISBN 13 : 1468491938
Total Pages : 366 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Semi-Insulating III–V Materials by : REES

Download or read book Semi-Insulating III–V Materials written by REES and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.

Analysis of Semi-Insulating Bulk GaAs Using Glow Discharge Mass Spectrometry

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ISBN 13 :
Total Pages : 23 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Analysis of Semi-Insulating Bulk GaAs Using Glow Discharge Mass Spectrometry by :

Download or read book Analysis of Semi-Insulating Bulk GaAs Using Glow Discharge Mass Spectrometry written by and published by . This book was released on 1993 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ability to perform sub-part per billion (ppb) analysis of semi- insulating (SI) GaAs substrate material is of critical importance for the development of electronic materials used in microelectronic device applications. Glow discharge mass spectrometry (GDMS) is commonly used to perform high sensitivity (part-per-trillion) measurements of metals and semiconductors. Since the sample is utilized as the cathode in a DC glow discharge, it must be conducting to some degree. Thus analysis of SI wafers presents major difficulties. Possible solutions include the use of a high purity mask or the mixing of pulverized sample material with high purity powder. Due to the finite purity of available materials, these methods have limitations. This study has resulted in the development of a novel method to perform maskless analysis of SI wafers with sub-ppb sensitivity across virtually the entire periodic table. This method has been utilized in various studies related to electronic device applications. GaAs, Trace analysis, Glow discharge mass spectrometry, Semi- insulating, Bulk chemical characterization.

Semiconductor Materials Analysis and Fabrication Process Control

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Publisher : Elsevier
ISBN 13 : 0444596917
Total Pages : 352 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Semiconductor Materials Analysis and Fabrication Process Control by : G.M. Crean

Download or read book Semiconductor Materials Analysis and Fabrication Process Control written by G.M. Crean and published by Elsevier. This book was released on 2012-12-02 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.

Optical and Electrical Characterization of Metal/semi-insulating GaAs Contacts

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (681 download)

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Book Synopsis Optical and Electrical Characterization of Metal/semi-insulating GaAs Contacts by :

Download or read book Optical and Electrical Characterization of Metal/semi-insulating GaAs Contacts written by and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Analytical Techniques for the Characterization of Compound Semiconductors

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Publisher : Elsevier
ISBN 13 : 0444596720
Total Pages : 554 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Analytical Techniques for the Characterization of Compound Semiconductors by : G. Bastard

Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.

Handbook of Zinc Oxide and Related Materials

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Publisher : Taylor & Francis
ISBN 13 : 143985582X
Total Pages : 1008 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Handbook of Zinc Oxide and Related Materials by : Zhe Chuan Feng

Download or read book Handbook of Zinc Oxide and Related Materials written by Zhe Chuan Feng and published by Taylor & Francis. This book was released on 2012-09-26 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a

Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 702 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nanoscale Characterization of Surfaces and Interfaces

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Publisher : John Wiley & Sons
ISBN 13 : 3527615946
Total Pages : 173 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Nanoscale Characterization of Surfaces and Interfaces by : N. John DiNardo

Download or read book Nanoscale Characterization of Surfaces and Interfaces written by N. John DiNardo and published by John Wiley & Sons. This book was released on 2008-09-26 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: Derived from the highly acclaimed series Materials Science and Technology, this book provides in-depth coverage of STM, AFM, and related non-contact nanoscale probes along with detailed applications, such as the manipulation of atoms and clusters on a nanometer scale. The methods are described in terms of the physics and the technology of the methods and many high-quality images demonstrate the power of these techniques in the investigation of surfaces and the processes which occur on them. Topics include: Semiconductor Surfaces and Interfaces * Insulators * Layered Compounds * Charge Density Wave Systems * Superconductors * Electrochemisty at Liquid-Solid Interfaces * Biological Systems * Metrological Applications * Nanoscale Surface Forces * Nanotribology * Manipulation on the Nanoscale Materials scientists, surface scientists, electrochemists, as well as scientists working in catalysis and microelectronics will find this book an invaluable source of information

High Mobility Materials for CMOS Applications

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Publisher : Woodhead Publishing
ISBN 13 : 0081020627
Total Pages : 390 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis High Mobility Materials for CMOS Applications by : Nadine Collaert

Download or read book High Mobility Materials for CMOS Applications written by Nadine Collaert and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability Provides a broad overview of the topic, from materials integration to circuits

Japanese Science and Technology

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ISBN 13 :
Total Pages : 724 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Japanese Science and Technology by :

Download or read book Japanese Science and Technology written by and published by . This book was released on 1986 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:

NBS Special Publication

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ISBN 13 :
Total Pages : 452 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis NBS Special Publication by :

Download or read book NBS Special Publication written by and published by . This book was released on 1968 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: